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81. 发明授权

US06509572B2 Charged particle beam lithography apparatus for forming pattern on semi-conductor 失效
公开(公告)号：US06509572B2
公开(公告)日：2003-01-21
申请号：US10105284
申请日：2002-03-26
申请人： Hiroyuki Ito , Yasunari Sohda , Yasuhiro Someda , Yoshinori Nakayama , Masahide Okumura , Hidetoshi Satoh
发明人： Hiroyuki Ito , Yasunari Sohda , Yasuhiro Someda , Yoshinori Nakayama , Masahide Okumura , Hidetoshi Satoh
IPC分类号： H01J37304
CPC分类号： B82Y10/00 , B82Y40/00 , H01J37/3174 , H01J2237/31776
摘要： In order to provide a high-speed and high accuracy cell projection exposure apparatus which increases a pattern projection number extremely, a plurality of stencil masks mounting a transferal aperture and a transmission aperture are provided and are positioned by a drive stage, the electron beam passes through a transmission aperture of other stencil masks while selecting the aperture on a stencil mask with a beam deflection device, the transmission aperture is provided for a mask transfer direction in succession, the stencil mask is moved while being transmitted with the beam, and other stencil mask transfer is executed when specified stencil mask aperture group is exposed. These operations are repeated so that all exposure processes are performed.

82. 发明授权

US06441383B1 Charged particle beam lithography apparatus for forming pattern on semi-conductor 失效
标题翻译：用于在半导体上形成图案的带电粒子束光刻设备
公开(公告)号：US06441383B1
公开(公告)日：2002-08-27
申请号：US09814062
申请日：2001-03-22
申请人： Hiroyuki Ito , Yasunari Sohda , Yasuhiro Someda , Yoshinori Nakayama , Masahide Okumura , Hidetoshi Satoh
发明人： Hiroyuki Ito , Yasunari Sohda , Yasuhiro Someda , Yoshinori Nakayama , Masahide Okumura , Hidetoshi Satoh
IPC分类号： H01J37304
CPC分类号： B82Y10/00 , B82Y40/00 , H01J37/3174 , H01J2237/31776
摘要： In order to provide a high-speed and high accuracy cell projection exposure apparatus which increases a pattern projection number extremely, a plurality of stencil masks mounting a transferal aperture and a transmission aperture are provided and are positioned by a drive stage, the electron beam passes through a transmission aperture of other stencil masks while selecting the aperture on a stencil masks with a beam deflection device, the transmission aperture is provided for a mask transfer direction in succession, the stencil mask is moved while being transmitted with the beam, and other stencil mask transfer is executed when specified stencil mask aperture group is exposed. These operations are repeated so that all exposure processes are performed.
摘要翻译：为了提供极大地增加图案投影数的高速和高精度的单元投影曝光装置，提供了安装传送孔和传输孔的多个模板掩模，并且通过驱动级定位，电子束通过通过其他模板掩模的透射孔，同时用光束偏转装置在模板掩模上选择光圈，传送孔径被连续地用于掩模传送方向，模板掩模在与光束一起传播的同时被移动，而其它模版当指定的模板掩模孔组被曝光时，执行掩模转印。重复这些操作，以便执行所有曝光处理。

83. 发明授权

US06320198B1 Charged particle beam lithography apparatus for forming pattern on semi-conductor 失效
公开(公告)号：US06320198B1
公开(公告)日：2001-11-20
申请号：US09621707
申请日：2000-07-21
申请人： Hiroyuki Ito , Yasunari Sohda , Yasuhiro Someda , Yoshinori Nakayama , Masahide Okumura , Hidetoshi Satoh
发明人： Hiroyuki Ito , Yasunari Sohda , Yasuhiro Someda , Yoshinori Nakayama , Masahide Okumura , Hidetoshi Satoh
IPC分类号： H01J37304
CPC分类号： B82Y10/00 , B82Y40/00 , H01J37/3174 , H01J2237/31776
摘要： In order to provide a high-speed and high accuracy cell projection exposure apparatus which increases a pattern projection number extremely, a plurality of stencil masks mounting a transferal aperture and a transmission aperture are provided and are positioned by a drive stage, the electron beam passes through a transmission aperture of other stencil masks while selecting the aperture on a stencil mask with a beam deflection device, the transmission aperture is provided for a mask transfer direction in succession, the stencil mask is moved while being transmitted with the beam, and other stencil mask transfer is executed when specified stencil mask aperture group is exposed. These operations are repeated so that all exposure processes are performed.

84. 发明授权

US5831273A Charged particle beam lithography method and apparatus thereof 失效
标题翻译：带电粒子束光刻方法及其装置
公开(公告)号：US5831273A
公开(公告)日：1998-11-03
申请号：US811927
申请日：1997-03-05
申请人： Yasuhiro Someda , Yasunari Sohda , Yoshinori Nakayama , Hiroyuki Itoh
发明人： Yasuhiro Someda , Yasunari Sohda , Yoshinori Nakayama , Hiroyuki Itoh
IPC分类号： H01J37/302 , H01J37/317 , G06F15/46
CPC分类号： B82Y10/00 , B82Y40/00 , H01J37/3023 , H01J37/3174
摘要： A method of adjusting a shaped beam in a charged particle beam writing method of writing a pattern on the surface of a written target using the above shaped beam is disclosed. The above method of adjusting the above shaped beam consists of a process for measuring the point of the center of the intensity of the shaped beam projected on the surface of the written target, a process for calculating a projected position correcting amount for correcting the projected position on the surface of the written target of the shaped beam based upon the measured point of the center of the intensity and a process for correcting the projected position on the surface of the written target of the shaped beam by the obtained projected position correcting amount. According to this method of correcting the projected position of the beam based upon the point of the center of the intensity of the shaped beam, a positioning error in a connection between the parts of patterns written on the surface of the written target can be greatly reduced.
摘要翻译：公开了一种使用上述成形光束在写入目标的表面上写入图案的带电粒子束写入方法中调整成形光束的方法。上述调整上述成形光束的方法由用于测量投影在被写入的目标的表面上的成形光束的强度的中心点的测量的处理，用于计算用于校正投影位置的投影位置校正量的处理基于强度中心的测量点的成形光束的写入目标的表面，以及通过所获得的投影位置校正量校正成形光束的写入目标的表面上的投影位置的处理。根据这种根据成形光束强度的中心点校正光束的投影位置的方法，可以大大减少写在写入目标表面上的图案部分之间的连接中的定位误差。

85. 发明授权

US5283440A Electron beam writing system used in a cell projection method 失效
标题翻译：电子束写入系统用于单元投影法
公开(公告)号：US5283440A
公开(公告)日：1994-02-01
申请号：US770527
申请日：1991-10-03
申请人： Yasunari Sohda , Hideo Todokoro , Norio Saitou , Haruo Yoda , Hiroyuki Itoh , Hiroyuki Shinada , Yoshinori Nakayama , Shinji Okazaki
发明人： Yasunari Sohda , Hideo Todokoro , Norio Saitou , Haruo Yoda , Hiroyuki Itoh , Hiroyuki Shinada , Yoshinori Nakayama , Shinji Okazaki
IPC分类号： H01J37/317 , H01J37/30
CPC分类号： B82Y10/00 , B82Y40/00 , H01J37/3174 , H01J2237/049 , H01J2237/1532 , H01J2237/30455 , H01J2237/31776
摘要： An electron beam writing system is used in variable shaping and cell projection methods to produce LSI and reticles. In the cell projection method, the beam is deflected to define a writing position. In the time it takes to define the writing position, an operation of forming the beam is concluded, which operation includes the deflection of the beam to select a cell graphic, re-deflection for correcting the origin position of the written graphic, astigmatism correction of the written graphic, and focus correction for reducing the Coulomb effect. An electrostatic deflector is used as the deflector for the cell graphic selection. The arrangement of graphics includes a square aperture centrally located with a group of cell projection apertures positioned adjacent two sides of the square aperture.
摘要翻译：电子束写入系统用于可变整形和电池投影方法以产生LSI和光罩。在单元投影方法中，光束被偏转以限定写入位置。在定义写入位置的时候，结束了形成光束的操作，其操作包括光束的偏转以选择单元图形，用于校正写入图形的原点位置的重新偏转，散光校正书面图形和焦点校正，以减少库仑效应。静电偏转器用作细胞图形选择的偏转器。图形的布置包括中心定位的方孔，其中一组单元突出孔定位成邻近正方形孔的两侧。

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