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    • 81. 发明授权
    • On-chip receiver sensitivity test mechanism
    • 片上接收机灵敏度测试机制
    • US07958408B2
    • 2011-06-07
    • US11835274
    • 2007-08-07
    • Elida Isabel de ObaldiaDirk LeipoldOren EliezerRan KatzBogdan Staszewski
    • Elida Isabel de ObaldiaDirk LeipoldOren EliezerRan KatzBogdan Staszewski
    • H04B17/00
    • H04B17/0085G01R31/2822H04B17/29H04L1/24
    • An on-chip receiver sensitivity test mechanism for use in an integrated RF transmitter wherein the transmitter and the receiver share the same oscillator. The mechanism obviates the need to use expensive RF signal generator test equipment with built-in modulation capability and instead permits the use of very low cost external RF test equipment. The invention utilizes circuitry already existing in the transceiver, namely the modulation circuitry and local oscillators to perform sensitivity testing. The on-chip LO is used to generate the modulated test signal that otherwise would need to be provided by expensive external RF test equipment with modulation capability. The modulated LO signal is mixed with an externally generated unmodulated CW RF signal to generate a modulated signal at IF which is subsequently processed by the remainder of the receiver chain. The recovered data bits are compared using an on-chip BER meter or counter and a BER reading is generated. The BER reading is used either externally or by an on-chip processor or controller to establish a pass/fail indication for the chip.
    • 用于集成RF发射机的片上接收机灵敏度测试机构,其中发射机和接收机共享相同的振荡器。 该机构避免了使用具有内置调制能力的昂贵的RF信号发生器测试设备的需要,并且允许使用非常低成本的外部RF测试设备。 本发明利用已经存在于收发器中的电路,即调制电路和本地振荡器来执行灵敏度测试。 片上LO用于产生调制测试信号,否则将需要由具有调制能力的昂贵的外部RF测试设备提供。 调制的LO信号与外部产生的未调制的CW RF信号混合以在IF处产生调制信号,随后由接收器链的其余部分处理。 恢复的数据位使用片上BER计或计数器进行比较,产生BER读数。 BER读取在外部使用或由片上处理器或控制器用于建立芯片的通过/失败指示。
    • 84. 发明授权
    • On-chip test mechanism for transceiver power amplifier and oscillator frequency
    • 收发器功率放大器和振荡器频率的片上测试机制
    • US07035750B2
    • 2006-04-25
    • US10759912
    • 2004-01-16
    • Elida Isabel de ObaldiaChih-Ming HungDirk LeipoldOren Eliezer
    • Elida Isabel de ObaldiaChih-Ming HungDirk LeipoldOren Eliezer
    • G01R31/00
    • H03K5/08H04B17/102H04B17/16H04B17/20
    • An on-chip test mechanism for transceiver power amplifier and oscillator frequency for use with the transmitter portion of an integrated RF transceiver. The RF output from the power amplifier in the transmitter is input to a built-in dedicated analog comparator having a configurable threshold. The threshold is adjusted to a predetermined level at which crossings start to occur at the comparator output. The comparator outputs pulses only if the power amplifier output is above a minimum configurable level. The comparator output is input to a frequency divider whose frequency output is tested by a low cost external tester to determine the actual RF frequency thereby confirming generation of the correct oscillator frequency and that the amplitude of the signal at the output of the power amplifier is sufficiently high for the configurable threshold level to be exceeded, thereby determining the compliance of the output power with its defined specifications.
    • 用于收发器功率放大器和振荡器频率的片上测试机制,用于集成RF收发器的发射器部分。 发射机功率放大器的RF输出被输入到具有可配置阈值的内置专用模拟比较器。 阈值被调整到在比较器输出处开始发生交叉的预定电平。 仅当功率放大器输出高于最小可配置电平时,比较器才会输出脉冲。 比较器输出被输入到分频器,其频率输出由低成本外部测试仪测试以确定实际RF频率,从而确认产生正确的振荡器频率,并且功率放大器输出端的信号幅度足够 可以超过可配置的阈值电平,从而确定输出功率与其规定的规格的一致性。
    • 87. 发明授权
    • Integrated circuit incorporating RF antenna switch and power amplifier
    • 集成电路结合RF天线开关和功率放大器
    • US06882829B2
    • 2005-04-19
    • US10114227
    • 2002-04-02
    • Alexander MostovDirk Leipold
    • Alexander MostovDirk Leipold
    • H04B1/04H04B1/48H04B1/44
    • H04B1/48H04B1/04
    • A novel integrated circuit incorporating a transmit/receive antenna switch capable of being integrated using silicon based RF CMOS semiconductor processes and a power amplifier on the same substrate. The switch circuit is constructed whereby the substrate (i.e. bulk) terminals of the FETs are left floating thus improving the isolation and reducing the insertion loss of the switch. Floating the substrate of the transistors eliminates most of the losses caused by leakage paths through parasitic capacitances internal to the transistor thus improving the isolation and reducing the insertion loss of the switch. Alternatively, the substrate can be connected to the source or to ground via a resistor of sufficiently high value to effectively float the substrate.
    • 一种新颖的集成电路,其结合了能够使用硅基RF CMOS半导体工艺集成的发射/接收天线开关和在同一衬底上的功率放大器。 开关电路被构造成使得FET的衬底(即本体)端子悬空,从而改善隔离并降低开关的插入损耗。 浮置晶体管的基板消除了由通过晶体管内部的寄生电容的泄漏路径引起的大部分损耗,从而改善了隔离并降低了开关的插入损耗。 或者,衬底可以通过足够高的电阻器连接到源极或接地,以有效地浮动衬底。