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热词
    • 82. 发明授权
    • Method of forming a sidewall on a semiconductor element
    • 在半导体元件上形成侧壁的方法
    • US5462896A
    • 1995-10-31
    • US903465
    • 1992-06-23
    • Atushi KomuraKenji KondoAkira Kuroyanagi
    • Atushi KomuraKenji KondoAkira Kuroyanagi
    • H01L21/302H01L21/3065H01L21/311H01L21/336H01L29/78H01L21/465
    • H01L29/66719H01L21/31116H01L29/66712H01L29/7811H01L29/0615H01L29/0638H01L29/1095H01L29/402H01L29/42368
    • A method fabricates a semiconductor device having a sidewall made from an insulation film at each side of a gate electrode portion. The method forms a polysilicon gate electrode (11a) on a gate oxide film (10) in a predetermined region on an n.sup.- epitaxial layer (2). A CVD silicon oxide film (15) having a predetermined thickness is formed over the polysilicon gate electrode material (11a) on the n.sup.- epitaxial layer (2). A magnetron enhanced reactive ion etching apparatus is used to etch the CVD silicon oxide film (15) while pouring a CHF.sub.3 gas made by coupling carbon, hydrogen, and fluorine and an N.sub.2 gas onto the etched material, such that the CVD silicon oxide film (15) is left only at each side of the polysilicon gate electrode material (11a), to form a sidewall (16). To avoid electrodes of the magnetron enhanced reactive ion etching apparatus from staining, CHF.sub.3 /He/N.sub.2 /O.sub.2 may be used for etching.
    • 一种制造半导体器件,其具有由栅电极部分的每一侧由绝缘膜制成的侧壁。 该方法在n型外延层(2)上的预定区域中的栅极氧化膜(10)上形成多晶硅栅电极(11a)。 在n外延层(2)上的多晶硅栅电极材料(11a)上形成具有预定厚度的CVD氧化硅膜(15)。 使用磁控增强反应离子蚀刻装置来蚀刻CVD氧化硅膜(15),同时将通过将碳,氢和氟与N 2气体偶合而形成的CHF 3气体倒入到蚀刻材料上,使得CVD氧化硅膜( 15)仅留在多晶硅栅电极材料(11a)的每一侧,以形成侧壁(16)。 为了避免磁控管增强反应离子蚀刻装置的电极染色,可以使用CHF 3 / He / N 2 / O 2进行蚀刻。