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    • 81. 发明授权
    • Automatic transmission
    • 自动变速器
    • US08202192B2
    • 2012-06-19
    • US12829397
    • 2010-07-02
    • Kohei IizukaNoriaki SaitohSoichi SuginoMirko LeeschJoerg MuellerRico Resch
    • Kohei IizukaNoriaki SaitohSoichi SuginoMirko LeeschJoerg MuellerRico Resch
    • F16H3/44
    • F16H3/666F16H2200/006F16H2200/201F16H2200/2046F16H2200/2048
    • An automatic transmission includes a first single-pinion planetary gear mechanism including a first sun gear, a first ring gear, and a first carrier that each correspond to one of first to third elements in a velocity diagram. The second element is connected to the input shaft. A second single-pinion planetary gear mechanism including a second sun gear, a second ring gear, and a second carrier that each correspond to one of fourth to sixth elements in a velocity diagram. The fourth element is connected to the first element to form a first connected body. A double-pinion third planetary gear mechanism includes a third sun gear, a third ring gear, and a third carrier that each correspond to one of seventh to ninth elements in a velocity diagram. The eighth element is connected to the fifth element to form a second connected body that is connected to the output member.
    • 自动变速器包括第一单小齿轮行星齿轮机构,其包括第一太阳齿轮,第一齿圈和第一行星架,每个行星齿轮机构以速度图对应于第一至第三元件之一。 第二个元件连接到输入轴。 第二单小齿轮行星齿轮机构,其包括第二太阳齿轮,第二齿圈和第二载体,其每个对应于速度图中的第四至第六元件之一。 第四元件连接到第一元件以形成第一连接体。 双小齿轮的第三行星齿轮机构包括第三太阳齿轮,第三齿圈和第三行星齿轮,每个对应于速度图中的第七至第九元件之一。 第八元件连接到第五元件以形成连接到输出元件的第二连接体。
    • 82. 发明申请
    • MEMS ELEMENT
    • MEMS元件
    • US20120122314A1
    • 2012-05-17
    • US13321116
    • 2010-05-26
    • Hauke PohlmannRonald DekkerJoerg MuellerMartin Duemling
    • Hauke PohlmannRonald DekkerJoerg MuellerMartin Duemling
    • H01L21/304
    • H03H3/0073B81B2201/0271B81C1/0019Y10T29/49005Y10T29/49128Y10T29/49156
    • A method of manufacturing an electronic device that comprises a microelectromechanical (MEMS) element, the method comprising the steps of: providing a material layer (34) on a first side of a substrate (32); providing a trench (40) in the material later (34); etching material from the trench (40) such as to also etch the substrate (32) from the first side of the substrate (32); grinding the substrate (32) from a second side of the substrate to expose the trench (40); and using the exposed trench (40) as an etch hole. The exposed trench (40) is used as an etch hole for releasing a portion of the material layer (34), for example a beam resonator (12), from the substrate (32). An input electrode (6), an output electrode (8), and a top electrode (10) are provided.
    • 一种制造包括微机电元件的电子器件的方法,所述方法包括以下步骤:在衬底(32)的第一侧上提供材料层(34); 在后面的材料(34)中提供沟槽(40); 从沟槽(40)蚀刻材料,以便也从衬底(32)的第一侧蚀刻衬底(32); 从衬底的第二侧研磨衬底(32)以露出沟槽(40); 并使用暴露的沟槽(40)作为蚀刻孔。 暴露的沟槽(40)用作用于从衬底(32)释放材料层(34)的一部分(例如光束谐振器(12))的蚀刻孔。 设置有输入电极(6),输出电极(8)和顶部电极(10)。
    • 84. 发明授权
    • Solar cell
    • 太阳能电池
    • US07851696B2
    • 2010-12-14
    • US12627482
    • 2009-11-30
    • Joerg MuellerRobert WadeMarkus Hlusiak
    • Joerg MuellerRobert WadeMarkus Hlusiak
    • H01L31/00H01L21/00
    • H01L31/00H01L31/022458H01L31/0682H01L31/1804Y02E10/547Y02P70/521
    • The invention relates to a solar cell that comprises a planar semiconductor substrate with a front and a back; a multitude of holes that interconnect the front and the back; and current-collecting electrical contacts that are exclusively arranged on the back. The front comprises highly doped regions and lightly doped regions of a first type such that in each case the holes are situated in a highly doped region or adjoin such a region. According to a first aspect of the invention, the highly doped regions are arranged locally around the holes. According to a second aspect of the invention, the front comprises at least one region without holes, and the highly doped regions comprise one region or several regions that extends/extend to the at least one hole-free region. The invention furthermore relates to methods for manufacturing such solar cells.
    • 本发明涉及一种太阳能电池,其包括具有正面和背面的平面半导体衬底; 连接前面和后面的多个孔; 和专门布置在背面的集电电触点。 前面包括高掺杂区域和第一类型的轻掺杂区域,使得在每种情况下,空穴位于高掺杂区域中或邻接这样的区域。 根据本发明的第一方面,高度掺杂的区域围绕孔局部排列。 根据本发明的第二方面,前面包括至少一个没有空穴的区域,并且高掺杂区域包括延伸/延伸到至少一个无孔区域的一个区域或几个区域。 本发明还涉及制造这种太阳能电池的方法。