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81. 发明申请

US20090007686A1 Apparatus for Measuring a Mechanical Quantity 失效
标题翻译：机械量测量装置
公开(公告)号：US20090007686A1
公开(公告)日：2009-01-08
申请号：US12210261
申请日：2008-09-15
申请人： Takashi SUMIGAWA , Hiroyuki Ohta
发明人： Takashi SUMIGAWA , Hiroyuki Ohta
IPC分类号： G01B7/16
CPC分类号： G01B7/18 , G01B7/16 , G01B7/20 , G01L1/2206 , G01L1/2262 , G01L5/0047
摘要： An apparatus structure and measurement method are provided to retain high precision and high reliability of a semiconductor mechanical quantity measuring apparatus which senses a mechanical quantity and transmits measured information wirelessly. As to a silicon substrate of the semiconductor mechanical quantity measuring apparatus, for example, a ratio of a substrate thickness to a substrate length along a measurement direction is set small, and a ratio of a substrate thickness to a substrate length along a direction perpendicular to the measurement direction is set small. The apparatus upper surface is covered with a protective member. It is possible to measure a strain along a particular direction and realize mechanical quantity measurement with less error and high precision. An impact resistance and environment resistance of the apparatus itself can be improved.
摘要翻译：提供了一种装置结构和测量方法，以保持半导体机械量测量装置的高精度和高可靠性，该装置检测机械量并无线传送测量信息。对于半导体机械量测量装置的硅衬底，例如，沿着测量方向将衬底厚度与衬底长度的比率设置得较小，并且沿着垂直于半导体机械量测量装置的方向的衬底厚度与衬底长度的比率测量方向设定得很小。设备上表面被保护构件覆盖。可以测量特定方向的应变，实现误差小，精度更高的机械量测量。可以提高装置本身的耐冲击性和耐环境性。

82. 发明授权

US07459786B2 Semiconductor device 失效
标题翻译：半导体器件
公开(公告)号：US07459786B2
公开(公告)日：2008-12-02
申请号：US11155272
申请日：2005-06-17
申请人： Hiromi Shimazu , Tomio Iwasaki , Hiroyuki Ohta , Kensuke Ishikawa , Osamu Inoue , Takayuki Oshima
发明人： Hiromi Shimazu , Tomio Iwasaki , Hiroyuki Ohta , Kensuke Ishikawa , Osamu Inoue , Takayuki Oshima
IPC分类号： H01L23/48 , H01L23/52 , H01L29/40
CPC分类号： H01L23/53295 , H01L21/76807 , H01L21/7682 , H01L21/76832 , H01L21/76834 , H01L21/76835 , H01L23/5222 , H01L23/53238 , H01L2924/0002 , H01L2924/00
摘要： A reliable semiconductor device having a multilayer wiring structure formed of copper as a main component material, which constrains occurrence of voids caused by stress migration. In the multilayer wiring structure, a first insulation layer having a high barrier property and a compression stress, and making contact with the upper surface of a first wiring made of copper as a main component material, a second insulation film having a tensile stress, and a third insulation film having a dielectric constant which is lower than those of the first and second insulation film, are laminated one upon another in the mentioned order as viewed the bottom thereof, and a via hole is formed piercing through the first insulation film, the second insulation film and the third insulation film, making contact with the first wiring.
摘要翻译：具有由铜作为主要成分材料形成的多层布线结构的可靠的半导体器件，其限制由应力迁移引起的空隙的发生。在多层布线结构体中，具有高阻隔性和压缩应力的第一绝缘层，与由铜作为主要成分材料的第一布线的上表面接触，具有拉伸应力的第二绝缘膜，以及具有低于第一绝缘膜和第二绝缘膜的介电常数的第三绝缘膜按照从底部开始的顺序依次层叠，并且形成穿过第一绝缘膜的通孔，第二绝缘膜和第三绝缘膜，与第一布线接触。

83. 发明授权

US07430920B2 Apparatus for measuring a mechanical quantity 有权
标题翻译：用于测量机械量的装置
公开(公告)号：US07430920B2
公开(公告)日：2008-10-07
申请号：US11303730
申请日：2005-12-16
申请人： Takashi Sumigawa , Hiroyuki Ohta
发明人： Takashi Sumigawa , Hiroyuki Ohta
IPC分类号： G01B7/16
CPC分类号： G01B7/18 , G01B7/16 , G01B7/20 , G01L1/2206 , G01L1/2262 , G01L5/0047
摘要： An apparatus structure and measurement method are provided to retain high precision and high reliability of a semiconductor mechanical quantity measuring apparatus which senses a mechanical quantity and transmits measured information wirelessly. As to a silicon substrate of the semiconductor mechanical quantity measuring apparatus, for example, a ratio of a substrate thickness to a substrate length along a measurement direction is set small, and a ratio of a substrate thickness to a substrate length along a direction perpendicular to the measurement direction is set small. The apparatus upper surface is covered with a protective member. It is possible to measure a strain along a particular direction and realize mechanical quantity measurement with less error and high precision. An impact resistance and environment resistance of the apparatus itself can be improved.
摘要翻译：提供了一种装置结构和测量方法，以保持半导体机械量测量装置的高精度和高可靠性，该装置检测机械量并无线传送测量信息。对于半导体机械量测量装置的硅衬底，例如，沿着测量方向将衬底厚度与衬底长度的比率设置得较小，并且沿着垂直于半导体机械量测量装置的方向的衬底厚度与衬底长度的比率测量方向设定得很小。设备上表面被保护构件覆盖。可以测量特定方向的应变，实现误差小，精度更高的机械量测量。可以提高装置本身的耐冲击性和耐环境性。

84. 发明申请

US20080206948A1 Semiconductor device and method of fabricating the same 有权
标题翻译：半导体装置及其制造方法
公开(公告)号：US20080206948A1
公开(公告)日：2008-08-28
申请号：US11984737
申请日：2007-11-21
申请人： Takashi Saiki , Hiroyuki Ohta , Hiroyuki Kanata
发明人： Takashi Saiki , Hiroyuki Ohta , Hiroyuki Kanata
IPC分类号： H01L21/336
CPC分类号： H01L29/6659 , H01L21/823807 , H01L21/823814 , H01L21/823864 , H01L29/665 , H01L29/6656 , H01L29/7833
摘要： An extension region is formed by ion implantation under masking by a gate electrode, and then a substance having a diffusion suppressive function over an impurity contained in a source-and-drain is implanted under masking by the gate electrode and a first sidewall spacer so as to form amorphous layers a semiconductor substrate within a surficial layer thereof and in alignment with the first sidewall spacer, to thereby form an amorphous diffusion suppressive region.
摘要翻译：通过栅极电极掩蔽下的离子注入形成延伸区域，然后在栅极电极和第一侧壁间隔物的掩蔽下注入在源极和漏极中包含的杂质上具有扩散抑制功能的物质，以便在其表面层内形成半导体衬底并与第一侧壁间隔物对齐，从而形成非晶扩散抑制区域。

85. 发明申请

US20070228500A1 Mechanical-Quality measuring device 有权
标题翻译：机械质量测量装置
公开(公告)号：US20070228500A1
公开(公告)日：2007-10-04
申请号：US11709075
申请日：2007-02-20
申请人： Hiromi Shimazu , Hiroyuki Ohta , Yohei Tanno
发明人： Hiromi Shimazu , Hiroyuki Ohta , Yohei Tanno
IPC分类号： H01L27/20 , H01L29/84
CPC分类号： G01L1/2293 , G01B7/18 , G01L1/18
摘要： A mechanical-quantity measuring device capable of measuring a strain component in a specific direction with high precision is provided.At least two or more pairs of bridge circuits are formed inside a semiconductor monocrystal substrate and a semiconductor chip, and one of these bridge circuits forms a n-type diffusion resistor in which a direction of a current flow and measuring variation of a resistor value are in parallel with a direction of the semiconductor monocrystal silicon substrate, and an another bridge circuit is composed of combination of p-type diffusion resistors in parallel with a direction.
摘要翻译：提供能够高精度地测量特定方向的应变分量的机械量测量装置。在半导体单晶基板和半导体芯片的内部形成有至少两对以上的桥式电路，并且这些桥式电路之一形成n型扩散电阻器，其中电流方向和电阻值的测量变化为与半导体单晶硅衬底的<100>方向并联，并且另一桥接电路由与<110>方向平行的p型扩散电阻器的组合组成。

86. 发明授权

US07196396B2 Semiconductor device having STI without divot and its manufacture 有权
公开(公告)号：US07196396B2
公开(公告)日：2007-03-27
申请号：US11268499
申请日：2005-11-08
申请人： Hiroyuki Ohta
发明人： Hiroyuki Ohta
IPC分类号： H01L29/00 , H01L21/336
CPC分类号： H01L21/76232 , H01L21/76224 , H01L21/823481 , H01L21/823807 , H01L21/823878 , H01L29/7846
摘要： The method of manufacturing a semiconductor device has the steps of: etching a semiconductor substrate to form an isolation trench by using as a mask a pattern including a first silicon nitride film and having a window; depositing a second silicon nitride film covering an inner surface of the isolation trench; forming a first silicon oxide film burying the isolation trench; etching and removing the first silicon oxide film in an upper region of the isolation trench; etching and removing the exposed second silicon nitride film; chemical-mechanical-polishing the second silicon oxide film; and etching and removing the exposed first silicon nitride film.

87. 发明授权

US07119428B2 Semiconductor device 有权
标题翻译：半导体器件
公开(公告)号：US07119428B2
公开(公告)日：2006-10-10
申请号：US11025634
申请日：2004-12-28
申请人： Hisashi Tanie , Nae Hisano , Hiroyuki Ohta , Hiroaki Ikeda , Ichiro Anjo , Mitsuaki Katagiri , Yuji Watanabe
发明人： Hisashi Tanie , Nae Hisano , Hiroyuki Ohta , Hiroaki Ikeda , Ichiro Anjo , Mitsuaki Katagiri , Yuji Watanabe
IPC分类号： H01L23/22 , H01L23/053 , H01L21/44
CPC分类号： H01L25/0657 , H01L23/481 , H01L24/48 , H01L2224/05573 , H01L2224/05647 , H01L2224/13025 , H01L2224/16145 , H01L2224/16225 , H01L2224/45144 , H01L2224/48091 , H01L2224/48227 , H01L2224/48472 , H01L2224/73204 , H01L2225/06513 , H01L2225/0652 , H01L2225/06541 , H01L2225/06589 , H01L2225/06593 , H01L2924/00014 , H01L2924/01019 , H01L2924/01079 , H01L2924/01087 , H01L2924/10253 , H01L2924/14 , H01L2924/15311 , H01L2924/15312 , H01L2924/181 , H01L2924/19041 , H01L2924/19105 , H01L2924/00 , H01L2924/00012 , H01L2224/45099 , H01L2224/45015 , H01L2924/207
摘要： A semiconductor device capable of reducing a temperature increase during operation thereof is provided. In the semiconductor device, an interface chip is stacked on a plurality of stacked semiconductor elements. Both an “Si” interposer and a resin interposer are arranged under the plural semiconductor elements. The Si interposer is arranged between the resin interposer and the plural semiconductor elements. The Si interposer owns a thickness which is thicker than a thickness of a semiconductor element, and also has a linear expansion coefficient which is smaller than a linear expansion coefficient of the resin interposer, and further, is larger than, or equal to linear expansion coefficients of the plural semiconductor elements.
摘要翻译：提供一种能够在其操作期间降低温度升高的半导体器件。在半导体装置中，在多个层叠的半导体元件上层叠有接口芯片。 “Si”插入件和树脂插入器都布置在多个半导体元件下方。 Si插入件布置在树脂插入件和多个半导体元件之间。 Si插入件具有比半导体元件的厚度厚的厚度，并且还具有比树脂插入体的线膨胀系数小的线膨胀系数，并且还大于或等于线膨胀系数的多个半导体元件。

88. 发明申请

US20060207339A1 Mechanical-quantity measuring device 有权
公开(公告)号：US20060207339A1
公开(公告)日：2006-09-21
申请号：US11350109
申请日：2006-02-09
申请人： Takashi Sumigawa , Hiroyuki Ohta
发明人： Takashi Sumigawa , Hiroyuki Ohta
IPC分类号： G01B7/16
CPC分类号： G01B7/18 , G01L1/18
摘要： A mechanical-quantity measuring device capable of measuring a strain component of structure deformation for an object to be measured in a particular desired direction with long life, high reliability and high precision. A strain sensor is formed on a semiconductor substrate. Impurity-diffused layers considering the crystal orientation of the semiconductor single crystalline substrate are used to form a Wheatstone bridge circuit on the substrate. The Wheatstone bridge circuit can operate on one substrate since the semiconductor single crystal has the anisotropy of piezoresistance effect.

89. 发明申请

US20060006543A1 Semiconductor device 失效
标题翻译：半导体器件
公开(公告)号：US20060006543A1
公开(公告)日：2006-01-12
申请号：US11155272
申请日：2005-06-17
申请人： Hiromi Shimazu , Tomio Iwasaki , Hiroyuki Ohta , Kensuke Ishikawa , Osamu Inoue , Takayuki Oshima
发明人： Hiromi Shimazu , Tomio Iwasaki , Hiroyuki Ohta , Kensuke Ishikawa , Osamu Inoue , Takayuki Oshima
IPC分类号： H01L23/48
CPC分类号： H01L23/53295 , H01L21/76807 , H01L21/7682 , H01L21/76832 , H01L21/76834 , H01L21/76835 , H01L23/5222 , H01L23/53238 , H01L2924/0002 , H01L2924/00
摘要： A reliable semiconductor device having a multilayer wiring structure formed of copper as a main component material, which constrains occurrence of voids caused by stress migration. In the multilayer wiring structure, a first insulation layer having a high barrier property and a compression stress, and making contact with the upper surface of a first wiring made of copper as a main component material, a second insulation film having a tensile stress, and a third insulation film having a dielectric constant which is lower than those of the first and second insulation film, are laminated one upon another in the mentioned order as viewed the bottom thereof, and a via hole is formed piercing thorough the first insulation film, the second insulation film and the third insulation film, making contact with the first wiring.
摘要翻译：具有由铜作为主要成分材料形成的多层布线结构的可靠的半导体器件，其限制由应力迁移引起的空隙的发生。在多层布线结构体中，具有高阻隔性和压缩应力的第一绝缘层，与由铜作为主要成分材料的第一布线的上表面接触，具有拉伸应力的第二绝缘膜，以及介电常数低于第一绝缘膜和第二绝缘膜的介电常数的第三绝缘膜按照其底部的顺序一个接一个层叠，并且形成穿过第一绝缘膜的通孔，第二绝缘膜和第三绝缘膜，与第一布线接触。

90. 发明申请

US20050089799A1 Optical information recording medium, producing method thereof and method of recording/erasing/reproducing information 审中-公开
标题翻译：光信息记录介质，其制造方法以及记录/擦除/再现信息的方法
公开(公告)号：US20050089799A1
公开(公告)日：2005-04-28
申请号：US10985626
申请日：2004-11-09
申请人： Mayumi Otoba , Noboru Yamada , Katsumi Kawahara , Hiroyuki Ohta , Eiji Ohno , Ken'ichi Nagata
发明人： Mayumi Otoba , Noboru Yamada , Katsumi Kawahara , Hiroyuki Ohta , Eiji Ohno , Ken'ichi Nagata
IPC分类号： G11B7/0045 , G11B7/005 , G11B7/0055 , G11B7/006 , G11B7/007 , G11B7/013 , G11B7/24 , G11B7/243 , G11B7/257 , G11B7/26 , G03G15/02
CPC分类号： G11B7/006 , G11B7/00454 , G11B7/0052 , G11B7/00557 , G11B7/007 , G11B7/00718 , G11B7/24 , G11B7/24085 , G11B7/243 , G11B7/257 , G11B7/26 , G11B2007/2571 , G11B2007/25713 , G11B2007/25715
摘要： The present invention provides an optical information medium having excellent weather resistance and repeating characteristics. The optical information medium has a barrier layer between a protective layer and a recording layer. The barrier layer includes GeN or GeON, and at least one element selected from the group consisting of Al, B, Ba, Bi, C, Ca, Ce, Cr, Dy, Eu, Ga, H, In, K, La, Mn, N, Nb, Ni, Pb, Pd, S, Si, Sb, Sn, Ta, T, Ti, W, Yb, Zn and Zr.
摘要翻译：本发明提供一种具有优异耐候性和重复特性的光学信息介质。光信息介质在保护层和记录层之间具有阻挡层。阻挡层包括GeN或GeON，以及选自Al，B，Ba，Bi，C，Ca，Ce，Cr，Dy，Eu，Ga，H，In，K，La，Mn中的至少一种元素，N，Nb，Ni，Pb，Pd，S，Si，Sb，Sn，Ta，T，Ti，W，Yb，Zn和Zr。

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