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1. 发明授权

US07459786B2 Semiconductor device 失效
标题翻译：半导体器件
公开(公告)号：US07459786B2
公开(公告)日：2008-12-02
申请号：US11155272
申请日：2005-06-17
申请人： Hiromi Shimazu , Tomio Iwasaki , Hiroyuki Ohta , Kensuke Ishikawa , Osamu Inoue , Takayuki Oshima
发明人： Hiromi Shimazu , Tomio Iwasaki , Hiroyuki Ohta , Kensuke Ishikawa , Osamu Inoue , Takayuki Oshima
IPC分类号： H01L23/48 , H01L23/52 , H01L29/40
CPC分类号： H01L23/53295 , H01L21/76807 , H01L21/7682 , H01L21/76832 , H01L21/76834 , H01L21/76835 , H01L23/5222 , H01L23/53238 , H01L2924/0002 , H01L2924/00
摘要： A reliable semiconductor device having a multilayer wiring structure formed of copper as a main component material, which constrains occurrence of voids caused by stress migration. In the multilayer wiring structure, a first insulation layer having a high barrier property and a compression stress, and making contact with the upper surface of a first wiring made of copper as a main component material, a second insulation film having a tensile stress, and a third insulation film having a dielectric constant which is lower than those of the first and second insulation film, are laminated one upon another in the mentioned order as viewed the bottom thereof, and a via hole is formed piercing through the first insulation film, the second insulation film and the third insulation film, making contact with the first wiring.
摘要翻译：具有由铜作为主要成分材料形成的多层布线结构的可靠的半导体器件，其限制由应力迁移引起的空隙的发生。在多层布线结构体中，具有高阻隔性和压缩应力的第一绝缘层，与由铜作为主要成分材料的第一布线的上表面接触，具有拉伸应力的第二绝缘膜，以及具有低于第一绝缘膜和第二绝缘膜的介电常数的第三绝缘膜按照从底部开始的顺序依次层叠，并且形成穿过第一绝缘膜的通孔，第二绝缘膜和第三绝缘膜，与第一布线接触。

2. 发明申请

US20060006543A1 Semiconductor device 失效
标题翻译：半导体器件
公开(公告)号：US20060006543A1
公开(公告)日：2006-01-12
申请号：US11155272
申请日：2005-06-17
申请人： Hiromi Shimazu , Tomio Iwasaki , Hiroyuki Ohta , Kensuke Ishikawa , Osamu Inoue , Takayuki Oshima
发明人： Hiromi Shimazu , Tomio Iwasaki , Hiroyuki Ohta , Kensuke Ishikawa , Osamu Inoue , Takayuki Oshima
IPC分类号： H01L23/48
CPC分类号： H01L23/53295 , H01L21/76807 , H01L21/7682 , H01L21/76832 , H01L21/76834 , H01L21/76835 , H01L23/5222 , H01L23/53238 , H01L2924/0002 , H01L2924/00
摘要： A reliable semiconductor device having a multilayer wiring structure formed of copper as a main component material, which constrains occurrence of voids caused by stress migration. In the multilayer wiring structure, a first insulation layer having a high barrier property and a compression stress, and making contact with the upper surface of a first wiring made of copper as a main component material, a second insulation film having a tensile stress, and a third insulation film having a dielectric constant which is lower than those of the first and second insulation film, are laminated one upon another in the mentioned order as viewed the bottom thereof, and a via hole is formed piercing thorough the first insulation film, the second insulation film and the third insulation film, making contact with the first wiring.
摘要翻译：具有由铜作为主要成分材料形成的多层布线结构的可靠的半导体器件，其限制由应力迁移引起的空隙的发生。在多层布线结构体中，具有高阻隔性和压缩应力的第一绝缘层，与由铜作为主要成分材料的第一布线的上表面接触，具有拉伸应力的第二绝缘膜，以及介电常数低于第一绝缘膜和第二绝缘膜的介电常数的第三绝缘膜按照其底部的顺序一个接一个层叠，并且形成穿过第一绝缘膜的通孔，第二绝缘膜和第三绝缘膜，与第一布线接触。

3. 发明授权

US06960832B2 Semiconductor device and its production process 失效
标题翻译：半导体器件及其生产工艺
公开(公告)号：US06960832B2
公开(公告)日：2005-11-01
申请号：US10761333
申请日：2004-01-22
申请人： Hiromi Shimazu , Tomio Iwasaki , Hiroyuki Ohta , Hideo Miura , Shuji Ikeda
发明人： Hiromi Shimazu , Tomio Iwasaki , Hiroyuki Ohta , Hideo Miura , Shuji Ikeda
IPC分类号： H01L21/285 , H01L21/336 , H01L21/768 , H01L23/12 , H01L21/00
CPC分类号： H01L29/665 , H01L21/28518 , H01L21/76877
摘要： In a semiconductor device having a cobalt silicide film, at least nickel or iron is contained in the cobalt silicide film for preventing the rise of resistance incidental to thinning of the film.
摘要翻译：在具有钴硅化物膜的半导体器件中，钴硅化物膜中至少含有镍或铁，以防止附着于薄膜变薄的电阻上升。

4. 发明申请

US20050056938A1 Semiconductor device 审中-公开
标题翻译：半导体器件
公开(公告)号：US20050056938A1
公开(公告)日：2005-03-17
申请号：US10901998
申请日：2004-07-30
申请人： Hiromi Shimazu , Tomio Iwasaki , Hiroyuki Ohta
发明人： Hiromi Shimazu , Tomio Iwasaki , Hiroyuki Ohta
IPC分类号： H01L23/52 , H01L21/3205 , H01L21/768 , H01L23/532 , H01L21/4763
CPC分类号： H01L21/7685 , H01L21/76838 , H01L21/76852 , H01L23/53219 , H01L23/53223 , H01L24/05 , H01L2224/02166 , H01L2224/04042 , H01L2224/05556 , H01L2224/48463 , H01L2924/1306 , H01L2924/13091 , H01L2924/14 , H01L2924/351 , H01L2924/00
摘要： A semiconductor device has a wiring structure in which an insulating layer, a wiring layer made of Al and containing at least either Au or Ag as an additional element, and a protecting layer are sequentially laminated on a substrate, so that a peel-off does not occur at an interface between the Al film and a substratum insulative material in an Al wiring structure made of Al as a main component material.
摘要翻译：半导体器件具有其中绝缘层，由Al制成的并且至少包含Au或Ag作为附加元素的布线层和保护层的布线结构，顺序层压在基板上，使得剥离在由Al作为主要成分材料制成的Al布线结构中的Al膜和基底绝缘材料之间的界面处不发生。

5. 发明授权

US06686274B1 Semiconductor device having cobalt silicide film in which diffusion of cobalt atoms is inhibited and its production process 失效
标题翻译：具有抑制钴原子扩散的钴硅化物膜的半导体装置及其制造方法
公开(公告)号：US06686274B1
公开(公告)日：2004-02-03
申请号：US09787743
申请日：2001-06-08
申请人： Hiromi Shimazu , Tomio Iwasaki , Hiroyuki Ohta , Hideo Miura , Shuji Ikeda
发明人： Hiromi Shimazu , Tomio Iwasaki , Hiroyuki Ohta , Hideo Miura , Shuji Ikeda
IPC分类号： H01L2144
CPC分类号： H01L29/665 , H01L21/28518 , H01L21/76877
摘要： In a semiconductor device having a cobalt silicide film, at least nickel or iron is contained in the cobalt silicide film for preventing the rise of resistance incidental to thinning of the film.
摘要翻译：在具有钴硅化物膜的半导体器件中，钴硅化物膜中至少含有镍或铁，以防止附着于薄膜变薄的电阻上升。

6. 发明申请

US20110259112A1 Mechanical-Quantity Measuring Device 有权
标题翻译：机械量测量装置
公开(公告)号：US20110259112A1
公开(公告)日：2011-10-27
申请号：US13177185
申请日：2011-07-06
申请人： Hiromi Shimazu , Hiroyuki Ohta , Yohei Tanno
发明人： Hiromi Shimazu , Hiroyuki Ohta , Yohei Tanno
IPC分类号： G01B7/16
CPC分类号： G01L1/2293 , G01B7/18 , G01L1/18
摘要： A mechanical-quantity measuring device capable of measuring a strain component in a specific direction with high precision is provided.At least two or more pairs of bridge circuits are formed inside a semiconductor monocrystal substrate and a semiconductor chip, and one of these bridge circuits forms a n-type diffusion resistor in which a direction of a current flow and measuring variation of a resistor value are in parallel with a direction of the semiconductor monocryastal silicon substrate, and an another bridge circuit is composed of combination of p-type diffusion resistors in parallel with a direction.
摘要翻译：提供能够高精度地测量特定方向的应变分量的机械量测量装置。在半导体单晶基板和半导体芯片的内部形成有至少两对以上的桥式电路，并且这些桥式电路之一形成n型扩散电阻器，其中电流方向和电阻值的测量变化为与半导体单晶硅基板的<100>方向并联，另一桥接电路由与<110>方向并联的p型扩散电阻器的组合构成。

7. 发明申请

US20070240519A1 Mechanical quantity measuring apparatus 审中-公开
标题翻译：机械量测量仪
公开(公告)号：US20070240519A1
公开(公告)日：2007-10-18
申请号：US11698584
申请日：2007-01-25
申请人： Hiromi Shimazu , Hiroyuki Ohta
发明人： Hiromi Shimazu , Hiroyuki Ohta
IPC分类号： G01B7/16
CPC分类号： G01B7/18
摘要： It is an object to prevent breakage of a mechanical quantity measuring apparatus made of a monocrystalline silicon substrate due to a large distortion. A mounting board for measuring distortion is provided on a rear surface of a sensor chip made of a semiconductor monocrystalline substrate having a distortion detecting unit. Even when a large distortion occurs in an object to be measured, a distortion occurring in the semiconductor monocrystalline substrate can be controlled by the mounting board. Therefore, the semiconductor monocrystalline substrate is not broken, and a highly reliable mechanical quantity measuring apparatus can be provided.
摘要翻译：其目的是防止由于大的变形而由单晶硅衬底制成的机械量测量装置的破损。用于测量变形的安装板设置在由具有失真检测单元的半导体单晶衬底制成的传感器芯片的后表面上。即使在要测量的对象发生大的失真，也可以通过安装基板来控制在半导体单晶衬底中产生的变形。因此，半导体单晶衬底不会破裂，并且可以提供高度可靠的机械量测量装置。

8. 发明授权

US07793551B2 Load sensor with shock relaxation material to protect semiconductor strain sensor 有权
标题翻译：带减震材料的负载传感器，用于保护半导体应变传感器
公开(公告)号：US07793551B2
公开(公告)日：2010-09-14
申请号：US12184426
申请日：2008-08-01
申请人： Hiromi Shimazu , Yohei Tanno , Hiroyuki Ohta , Ryuji Takada , Takayuki Shimodaira
发明人： Hiromi Shimazu , Yohei Tanno , Hiroyuki Ohta , Ryuji Takada , Takayuki Shimodaira
IPC分类号： G01B7/16
CPC分类号： G01L1/2225 , G01L1/18 , G01L1/26 , G01L5/162 , Y10T29/49103
摘要： The invention provides a load sensor which is driven by a low electric power consumption, can measure at a high precision, and has a high reliability without being broken. The load sensor is structured such that a detection rod for detecting a strain is provided in an inner portion of a hole formed near a center of a pin via a shock relaxation material and a semiconductor strain sensor is provided in the detection rod, in a load sensor detecting a load applied to the pin from a strain generated in an inner portion of the pin.
摘要翻译：本发明提供了一种由低功耗驱动的负载传感器，可以高精度地测量，并且具有高可靠性而不被破坏。负载传感器被构造成使得用于检测应变的检测杆通过冲击松弛材料设置在靠近销的中心的孔的内部，并且半导体应变传感器设置在检测棒中，在负载传感器检测从销的内部产生的应变施加到销的负载。

9. 发明授权

US07584668B2 Monitoring system for valve device 有权
标题翻译：阀门装置监控系统
公开(公告)号：US07584668B2
公开(公告)日：2009-09-08
申请号：US11834727
申请日：2007-08-07
申请人： Hiroyuki Ohta , Hiromi Shimazu , Yohei Tanno , Yoshihisa Kiyotoki , Kenji Onodera , Kenji Araki
发明人： Hiroyuki Ohta , Hiromi Shimazu , Yohei Tanno , Yoshihisa Kiyotoki , Kenji Onodera , Kenji Araki
IPC分类号： G01B7/16
CPC分类号： G01B7/18 , F16K37/0083
摘要： A monitoring system for valve device according to the present invention comprises a semiconductor single crystalline substrate including a bridged circuit and the bridged circuit comprising impurity-diffused resistors. The semiconductor single crystalline substrate is mounted to any of a valve device's valve stem, valve yoke, drive shaft, or elastic body disposed at the end of the drive shaft. Thrust and torque of the valve device are measured by the semiconductor single crystalline substrate and then the measured values are used for monitoring the valve device.
摘要翻译：根据本发明的阀装置的监测系统包括包括桥接电路的半导体单晶衬底和包括杂质扩散电阻器的桥接电路。半导体单晶衬底安装在设置在驱动轴端部的阀装置的阀杆，阀杆，驱动轴或弹性体中的任一个上。通过半导体单晶衬底测量阀装置的推力和扭矩，然后测量值用于监测阀装置。

10. 发明申请

US20090199650A1 MECHANICAL QUANTITY MEASURING APPARATUS 审中-公开
标题翻译：机械数量测量装置
公开(公告)号：US20090199650A1
公开(公告)日：2009-08-13
申请号：US12429123
申请日：2009-04-23
申请人： Hiromi Shimazu , Hiroyuki Ohta
发明人： Hiromi Shimazu , Hiroyuki Ohta
IPC分类号： G01B7/16
CPC分类号： G01B7/18
摘要： It is an object to prevent breakage of a mechanical quantity measuring apparatus made of a monocrystalline silicon substrate due to a large distortion. A mounting board for measuring distortion is provided on a rear surface of a sensor chip made of a semiconductor monocrystalline substrate having a distortion detecting unit. Even when a large distortion occurs in an object to be measured, a distortion occurring in the semiconductor monocrystalline substrate can be controlled by the mounting board. Therefore, the semiconductor monocrystalline substrate is not broken, and a highly reliable mechanical quantity measuring apparatus can be provided.
摘要翻译：其目的是防止由于大的变形而由单晶硅衬底制成的机械量测量装置的破损。用于测量变形的安装板设置在由具有失真检测单元的半导体单晶衬底制成的传感器芯片的后表面上。即使在要测量的对象发生大的失真，也可以通过安装基板来控制在半导体单晶衬底中发生的变形。因此，半导体单晶衬底不会破裂，并且可以提供高度可靠的机械量测量装置。

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