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    • 81. 发明授权
    • Magnetoresistance effect element and method for producing same
    • 磁阻效应元件及其制造方法
    • US06928724B2
    • 2005-08-16
    • US10793838
    • 2004-03-08
    • Susumu HashimotoYuichi OhsawaMichiko Hara
    • Susumu HashimotoYuichi OhsawaMichiko Hara
    • G01R33/09G11B5/39H01L43/08H01L43/12G11B5/127H04R31/00
    • H01L43/12Y10T29/49032
    • There is provided a magnetoresistance effect element which is capable of causing a large sense current to flow between electrodes and which has a smaller dispersion in direction of magnetization of a CPP element based on a magnetic field due to the sense current and has a lager reproducing output, and a method for producing the same. The magnetoresistance effect element is produced by: after forming a first electrode, forming a magnetoresistance effect film on the first electrode; applying a self-condensing organic resist on the magnetoresistance effect film, and thereafter, causing the organic resist to be droplets; subsequently, forming an insulating film thereon, and thereafter, removing the organic resist to form a groove portion in the insulating film to expose the top surface of the magnetoresistance effect film; and filling the groove portion with an electrode material to form a second electrode.
    • 提供了一种磁电阻效应元件,其能够导致大的感测电流在电极之间流动,并且由于感测电流而基于磁场具有较小的CPP元件的磁化方向的偏移,并且具有较大的再现输出 ,及其制造方法。 磁阻效应元件通过以下方式产生:在形成第一电极之后,在第一电极上形成磁阻效应膜; 在磁阻效应膜上施加自凝聚有机抗蚀剂,然后使有机抗蚀剂成为液滴; 随后在其上形成绝缘膜,然后除去有机抗蚀剂以在绝缘膜中形成沟槽部分以暴露磁阻效应膜的顶表面; 并用电极材料填充槽部分以形成第二电极。
    • 85. 发明授权
    • Magnetic memory element and magnetic memory apparatus
    • 磁存储元件和磁存储装置
    • US07889543B2
    • 2011-02-15
    • US12379402
    • 2009-02-20
    • Hirofumi MoriseShiho NakamuraYuichi OhsawaSatoshi YanagiDaisuke Saida
    • Hirofumi MoriseShiho NakamuraYuichi OhsawaSatoshi YanagiDaisuke Saida
    • G11C11/02
    • H01L27/228G11C11/161H01L43/08
    • A magnetic memory element is provided with first and second ferromagnetic fixed layers, a ferromagnetic memory layer, nonmagnetic first and second intermediate layers. The memory layer is disposed between the first and second fixed layers, and has a variable magnetization direction. In order to cancel asymmetry of a write-in current of the element, the element is provided so that the memory layer receives a larger perpendicular stray field from the first fixed layer than from the second fixed layer, and then a magnetization direction of a portion of the memory layer being nearest to the first intermediate layer and the magnetization direction of the first fixed layer are antiparallel to each other whenever a magnetization direction of a portion of the memory layer being nearest to the second intermediate layer and the magnetization direction of the second fixed layer are parallel to each other, and vice versa.
    • 磁存储元件设置有第一和第二铁磁固定层,铁磁存储层,非磁性第一和第二中间层。 存储层设置在第一和第二固定层之间,具有可变的磁化方向。 为了消除元件的写入电流的不对称性,提供元件,使得存储层从第一固定层接收比来自第二固定层的更大的垂直杂散场,然后接收部分的磁化方向 所述存储层的最靠近所述第一中间层的磁化方向和所述第一固定层的磁化方向在所述存储层的一部分的磁化方向最接近所述第二中间层的磁化方向和所述第二中间层的磁化方向相互反平行时, 固定层彼此平行,反之亦然。
    • 87. 发明授权
    • Magnetic cell and magnetic memory
    • 磁性细胞和磁记忆
    • US07372727B2
    • 2008-05-13
    • US11328112
    • 2006-01-10
    • Shiho NakamuraShigeru HanedaYuichi Ohsawa
    • Shiho NakamuraShigeru HanedaYuichi Ohsawa
    • G11C11/14
    • H01L43/08G11C11/15G11C11/16G11C11/5607H01L27/224H01L27/228
    • A magnetic cell includes: a first ferromagnetic layer whose magnetization is substantially fixed in a first direction; a second ferromagnetic layer whose magnetization is substantially fixed in a second direction opposite to the first direction; a third ferromagnetic layer provided between the first and the second ferromagnetic layers, a direction of magnetization of the third ferromagnetic layer being variable; a first intermediate layer provided between the first and the third ferromagnetic layers; and a second intermediate layer provided between the second and the third ferromagnetic layers. The direction of magnetization of the third ferromagnetic layer can be determined under an influence of spin-polarized electrons upon the third ferromagnetic layer by passing a current between the first and the second ferromagnetic layers.
    • 磁性电池包括:第一铁磁层,其磁化基本上固定在第一方向上; 第二铁磁层,其磁化基本上固定在与第一方向相反的第二方向上; 设置在所述第一和第二铁磁层之间的第三铁磁层,所述第三铁磁层的磁化方向是可变的; 设置在第一和第三铁磁层之间的第一中间层; 以及设置在第二和第三铁磁层之间的第二中间层。 可以通过在第一和第二铁磁层之间通过电流,在自旋极化电子对第三铁磁层的影响下确定第三铁磁层的磁化方向。
    • 89. 发明申请
    • Magnetic cell and magnetic memory
    • 磁性细胞和磁记忆
    • US20060120126A1
    • 2006-06-08
    • US11328112
    • 2006-01-10
    • Shiho NakamuraShigeru HanedaYuichi Ohsawa
    • Shiho NakamuraShigeru HanedaYuichi Ohsawa
    • G11C19/08
    • H01L43/08G11C11/15G11C11/16G11C11/5607H01L27/224H01L27/228
    • A magnetic cell comprises: a first ferromagnetic layer whose magnetization is substantially fixed in a first direction; a second ferromagnetic layer whose magnetization is substantially fixed in a second direction opposite to the first direction; a third ferromagnetic layer provided between the first and the second ferromagnetic layers, a direction of magnetization of the third ferromagnetic layer being variable; a first intermediate layer provided between the first and the third ferromagnetic layers; and a second intermediate layer provided between the second and the third ferromagnetic layers. The direction of magnetization of the third ferromagnetic layer can be determined under an influence of spin-polarized electrons upon the third ferromagnetic layer by passing a current between the first and the second ferromagnetic layers.
    • 磁性电池包括:第一铁磁层,其磁化基本上固定在第一方向上; 第二铁磁层,其磁化基本上固定在与第一方向相反的第二方向上; 设置在所述第一和第二铁磁层之间的第三铁磁层,所述第三铁磁层的磁化方向是可变的; 设置在第一和第三铁磁层之间的第一中间层; 以及设置在第二和第三铁磁层之间的第二中间层。 可以通过在第一和第二铁磁层之间通过电流,在自旋极化电子对第三铁磁层的影响下确定第三铁磁层的磁化方向。