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1. 发明申请

US20090052237A1 MAGNETIC MEMORY DEVICE AND MAGNETIC MEMORY APPARATUS 审中-公开
标题翻译：磁记忆装置和磁记忆装置
公开(公告)号：US20090052237A1
公开(公告)日：2009-02-26
申请号：US12107127
申请日：2008-04-22
申请人： Hirofumi Morise , Shiho Nakamura , Satoshi Yanagi , Yuichi Ohsawa , Daisuke Saida
发明人： Hirofumi Morise , Shiho Nakamura , Satoshi Yanagi , Yuichi Ohsawa , Daisuke Saida
IPC分类号： G11C11/00 , H01L29/82
CPC分类号： H01L43/08 , G11C11/161 , G11C11/1655 , G11C11/1659 , G11C11/1673 , G11C11/1675 , H01L27/228
摘要： A magnetic memory element includes a laminated construction of a first electrode, a first pinned layer, a first intermediate layer, a memory layer, a second intermediate layer, a second pinned layer and a second electrode, and a third electrode coupled to the first intermediate layer and not directly coupled to the memory layer. The magnetization directions of the first pinned layer, the second pinned layer, and the memory layer are parallel or antiparallel to each other. The magnetization direction of the memory layer takes a first direction when the current is passed with a first polarity so that the current flowing through the first pinned layer exceeds a first threshold. The magnetization direction of the memory layer takes a second direction when the current is passed with a second polarity so that the current flowing through the first pinned layer exceeds a second threshold.
摘要翻译：磁存储元件包括第一电极，第一被钉扎层，第一中间层，存储层，第二中间层，第二被钉扎层和第二电极的层压结构，以及耦合到第一中间体层并且不直接耦合到存储器层。第一被钉扎层，第二钉扎层和存储层的磁化方向彼此平行或反平行。当电流以第一极性通过时，存储层的磁化方向取第一方向，使得流过第一被钉扎层的电流超过第一阈值。当电流以第二极性通过时，存储层的磁化方向采取第二方向，使得流过第一被钉扎层的电流超过第二阈值。

2. 发明授权

US07889543B2 Magnetic memory element and magnetic memory apparatus 有权
标题翻译：磁存储元件和磁存储装置
公开(公告)号：US07889543B2
公开(公告)日：2011-02-15
申请号：US12379402
申请日：2009-02-20
申请人： Hirofumi Morise , Shiho Nakamura , Yuichi Ohsawa , Satoshi Yanagi , Daisuke Saida
发明人： Hirofumi Morise , Shiho Nakamura , Yuichi Ohsawa , Satoshi Yanagi , Daisuke Saida
IPC分类号： G11C11/02
CPC分类号： H01L27/228 , G11C11/161 , H01L43/08
摘要： A magnetic memory element is provided with first and second ferromagnetic fixed layers, a ferromagnetic memory layer, nonmagnetic first and second intermediate layers. The memory layer is disposed between the first and second fixed layers, and has a variable magnetization direction. In order to cancel asymmetry of a write-in current of the element, the element is provided so that the memory layer receives a larger perpendicular stray field from the first fixed layer than from the second fixed layer, and then a magnetization direction of a portion of the memory layer being nearest to the first intermediate layer and the magnetization direction of the first fixed layer are antiparallel to each other whenever a magnetization direction of a portion of the memory layer being nearest to the second intermediate layer and the magnetization direction of the second fixed layer are parallel to each other, and vice versa.
摘要翻译：磁存储元件设置有第一和第二铁磁固定层，铁磁存储层，非磁性第一和第二中间层。存储层设置在第一和第二固定层之间，具有可变的磁化方向。为了消除元件的写入电流的不对称性，提供元件，使得存储层从第一固定层接收比来自第二固定层的更大的垂直杂散场，然后接收部分的磁化方向所述存储层的最靠近所述第一中间层的磁化方向和所述第一固定层的磁化方向在所述存储层的一部分的磁化方向最接近所述第二中间层的磁化方向和所述第二中间层的磁化方向相互反平行时，固定层彼此平行，反之亦然。

3. 发明授权

US08077509B2 Magnetic memory 有权
标题翻译：磁记忆
公开(公告)号：US08077509B2
公开(公告)日：2011-12-13
申请号：US12320955
申请日：2009-02-10
申请人： Satoshi Yanagi , Yuichi Ohsawa , Shiho Nakamura , Daisuke Saida , Hirofumi Morise
发明人： Satoshi Yanagi , Yuichi Ohsawa , Shiho Nakamura , Daisuke Saida , Hirofumi Morise
IPC分类号： G11C11/15
CPC分类号： G11B25/04 , G11C11/161 , G11C11/1659 , G11C11/1675
摘要： A magnetic memory is provided with a memory cell. The memory cell includes a magnetic recording element, an interconnection to generate a radio-frequency current-induced magnetic field and a ground line. The magnetic recording element is provided with a first magnetic layer whose magnetization direction is substantially fixed, a magnetic recording layer whose magnetization direction is substantially reversed by spin-polarized electrons passing through the magnetic recording layer and a first nonmagnetic layer provided between the first magnetic layer and the magnetic recording layer. The interconnection is provided above the magnetic recording element to generate a radio-frequency current-induced magnetic field acting in a direction substantially perpendicular to a magnetization easy axis of the magnetic recording layer. The ground line is provided on a side opposite to the magnetic recording element with respect to the interconnection.
摘要翻译：磁存储器设置有存储单元。存储单元包括磁记录元件，用于产生射频电流感应磁场和接地线的互连。磁记录元件设置有其磁化方向基本上固定的第一磁性层，其磁化方向基本上由通过磁记录层的自旋极化电子反转的磁记录层和设置在第一磁性层之间的第一非磁性层和磁记录层。互连设置在磁记录元件的上方，以产生沿与磁记录层的易磁化轴基本垂直的方向作用的射频电流感应磁场。接地线相对于互连设置在与磁记录元件相对的一侧上。

4. 发明授权

US07931976B2 Magnetic recording element 有权
标题翻译：磁记录元件
公开(公告)号：US07931976B2
公开(公告)日：2011-04-26
申请号：US12285429
申请日：2008-10-03
申请人： Yuichi Ohsawa , Shiho Nakamura , Hirofumi Morise , Satoshi Yanagi , Daisuke Saida
发明人： Yuichi Ohsawa , Shiho Nakamura , Hirofumi Morise , Satoshi Yanagi , Daisuke Saida
IPC分类号： G11B5/39 , G01B7/14 , G01B7/24
CPC分类号： G11C11/1675 , G11C11/161 , G11C11/1659 , Y10T428/11 , Y10T428/1121 , Y10T428/1143 , Y10T428/115
摘要： A magnetic recording element includes a multilayer having a surface and a pair of electrodes. The multilayer has a first magnetic fixed layer whose magnetization is substantially fixed in a first direction substantially perpendicular to the surface. The multilayer also has a second magnetic fixed layer whose magnetization is substantially fixed in a second direction opposite to the first direction substantially perpendicular to the surface. A third magnetic layer is provided between the first and second magnetic layers. The direction of magnetization of the third ferromagnetic layer is variable. A first intermediate layer is provided between the first and the third magnetic layers. A second intermediate layer is provided between the second and the third magnetic layers. The pair of electrodes is capable of supplying an electric current flowing in a direction substantially perpendicular to the surface to the multilayer. The sectional area taken parallel to the surface at a thickness midpoint of the first magnetic layer is larger than that of the second magnetic layer.
摘要翻译：磁记录元件包括具有表面和一对电极的多层。多层具有第一磁性固定层，其磁化基本上在基本垂直于表面的第一方向固定。多层还具有第二磁性固定层，其磁化基本上固定在与基本上垂直于表面的第一方向相反的第二方向上。第三磁性层设置在第一和第二磁性层之间。第三铁磁层的磁化方向是可变的。第一中间层设置在第一和第三磁性层之间。第二中间层设置在第二和第三磁性层之间。该对电极能够将与表面大致垂直的方向流动的电流供给到多层。在第一磁性层的厚度中点平行于表面截取的截面积大于第二磁性层的截面面积。

5. 发明申请

US20090213638A1 Magnectic memory element and magnetic memory apparatus 有权
标题翻译：磁记忆元件和磁存储装置
公开(公告)号：US20090213638A1
公开(公告)日：2009-08-27
申请号：US12379402
申请日：2009-02-20
申请人： Hirofumi Morise , Shiho Nakamura , Yuichi Ohsawa , Satoshi Yanagi , Daisuke Saida
发明人： Hirofumi Morise , Shiho Nakamura , Yuichi Ohsawa , Satoshi Yanagi , Daisuke Saida
IPC分类号： G11C11/22 , G11C11/14 , G11C11/00 , H01L29/82
CPC分类号： H01L27/228 , G11C11/161 , H01L43/08
摘要： A magnetic memory element is provided with first and second ferromagnetic fixed layers, a ferromagnetic memory layer, nonmagnetic first and second intermediate layers. The memory layer is disposed between the first and second fixed layers, and has a variable magnetization direction. In order to cancel asymmetry of a write-in current of the element, the element is provided so that the memory layer receives a larger perpendicular stray field from the first fixed layer than from the second fixed layer, and then a magnetization direction of a portion of the memory layer being nearest to the first intermediate layer and the magnetization direction of the first fixed layer are antiparallel to each other whenever a magnetization direction of a portion of the memory layer being nearest to the second intermediate layer and the magnetization direction of the second fixed layer are parallel to each other, and vice versa.
摘要翻译：磁存储元件设置有第一和第二铁磁固定层，铁磁存储层，非磁性第一和第二中间层。存储层设置在第一和第二固定层之间，具有可变的磁化方向。为了消除元件的写入电流的不对称性，提供元件，使得存储层从第一固定层接收比来自第二固定层的更大的垂直杂散场，然后接收部分的磁化方向所述存储层的最靠近所述第一中间层的磁化方向和所述第一固定层的磁化方向在所述存储层的一部分的磁化方向最接近所述第二中间层的磁化方向和所述第二中间层的磁化方向相互反平行时，固定层彼此平行，反之亦然。

6. 发明申请

US20090207724A1 Magnetic memory 有权
标题翻译：磁记忆
公开(公告)号：US20090207724A1
公开(公告)日：2009-08-20
申请号：US12320955
申请日：2009-02-10
申请人： Satoshi Yanagi , Yuichi Ohsawa , Shiho Nakamura , Daisuke Saida , Hirofumi Morise
发明人： Satoshi Yanagi , Yuichi Ohsawa , Shiho Nakamura , Daisuke Saida , Hirofumi Morise
IPC分类号： G11B3/70
CPC分类号： G11B25/04 , G11C11/161 , G11C11/1659 , G11C11/1675
摘要： A magnetic memory is provided with a memory cell. The memory cell includes a magnetic recording element, an interconnection to generate a radio-frequency current-induced magnetic field and a ground line. The magnetic recording element is provided with a first magnetic layer whose magnetization direction is substantially fixed, a magnetic recording layer whose magnetization direction is substantially reversed by spin-polarized electrons passing through the magnetic recording layer and a first nonmagnetic layer provided between the first magnetic layer and the magnetic recording layer. The interconnection is provided above the magnetic recording element to generate a radio-frequency current-induced magnetic field acting in a direction substantially perpendicular to a magnetization easy axis of the magnetic recording layer. The ground line is provided on a side opposite to the magnetic recording element with respect to the interconnection.
摘要翻译：磁存储器设置有存储单元。存储单元包括磁记录元件，用于产生射频电流感应磁场和接地线的互连。磁记录元件设置有其磁化方向基本上固定的第一磁性层，其磁化方向基本上由通过磁记录层的自旋极化电子反转的磁记录层和设置在第一磁性层之间的第一非磁性层和磁记录层。互连设置在磁记录元件的上方，以产生沿与磁记录层的易磁化轴基本垂直的方向作用的射频电流感应磁场。接地线相对于互连设置在与磁记录元件相对的一侧上。

7. 发明申请

US20090098412A1 Magnetic recording element, manufacturing method of the same and magnetic storage system using the same 有权
标题翻译：磁记录元件，其制造方法和使用其的磁存储系统
公开(公告)号：US20090098412A1
公开(公告)日：2009-04-16
申请号：US12285429
申请日：2008-10-03
申请人： Yuichi Ohsawa , Shiho Nakamura , Hirofumi Morise , Satoshi Yanagi , Daisuke Saida
发明人： Yuichi Ohsawa , Shiho Nakamura , Hirofumi Morise , Satoshi Yanagi , Daisuke Saida
IPC分类号： G11B5/33
CPC分类号： G11C11/1675 , G11C11/161 , G11C11/1659 , Y10T428/11 , Y10T428/1121 , Y10T428/1143 , Y10T428/115
摘要： A magnetic recording element includes a multilayer having a surface and a pair of electrodes. The multilayer has a first magnetic fixed layer whose magnetization is substantially fixed in a first direction substantially perpendicular to the surface. The multilayer also has a second magnetic fixed layer whose magnetization is substantially fixed in a second direction opposite to the first direction substantially perpendicular to the surface. A third magnetic layer is provided between the first and second magnetic layers. The direction of magnetization of the third ferromagnetic layer is variable. A first intermediate layer is provided between the first and the third magnetic layers. A second intermediate layer is provided between the second and the third magnetic layers. The pair of electrodes is capable of supplying an electric current flowing in a direction substantially perpendicular to the surface to the multilayer. The sectional area taken parallel to the surface at a thickness midpoint of the first magnetic layer is larger than that of the second magnetic layer.
摘要翻译：磁记录元件包括具有表面和一对电极的多层。多层具有第一磁性固定层，其磁化基本上在基本垂直于表面的第一方向固定。多层还具有第二磁性固定层，其磁化基本上固定在与基本上垂直于表面的第一方向相反的第二方向上。第三磁性层设置在第一和第二磁性层之间。第三铁磁层的磁化方向是可变的。第一中间层设置在第一和第三磁性层之间。第二中间层设置在第二和第三磁性层之间。该对电极能够将与表面大致垂直的方向流动的电流供给到多层。在第一磁性层的厚度中点平行于表面截取的截面积大于第二磁性层的截面面积。

8. 发明授权

US08611142B2 Magnetic recording device and magnetic recording apparatus 失效
标题翻译：磁记录装置和磁记录装置
公开(公告)号：US08611142B2
公开(公告)日：2013-12-17
申请号：US13299130
申请日：2011-11-17
申请人： Shiho Nakamura , Hirofumi Morise , Satoshi Yanagi , Daisuke Saida , Akira Kikitsu
发明人： Shiho Nakamura , Hirofumi Morise , Satoshi Yanagi , Daisuke Saida , Akira Kikitsu
IPC分类号： G11C11/15 , G11C11/16 , G11C11/14 , G11C11/02
CPC分类号： G11C11/22 , G11B5/66 , G11C11/16 , G11C11/161 , G11C11/1675
摘要： An example magnetic recording device includes a laminated body. The laminated body includes a first ferromagnetic layer with a magnetization substantially fixed in a first direction; a second ferromagnetic layer with a variable magnetization direction; a first nonmagnetic layer disposed between the first ferromagnetic layer and the second ferromagnetic layer; a third ferromagnetic layer with a variable magnetization direction; and a fourth ferromagnetic layer with a magnetization substantially fixed in a second direction, wherein at least one of the first and second direction is generally perpendicular to the film plane. The magnetization direction of the second ferromagnetic layer is determinable in response to the orientation of a current, by passing the current in a direction generally perpendicular to the film plane of the layers of the laminated body and the magnetization of the third ferromagnetic layer is able to undergo precession by passing the current.
摘要翻译：示例性磁记录装置包括层压体。层叠体包括具有在第一方向上基本固定的磁化的第一铁磁层; 具有可变磁化方向的第二铁磁层; 设置在所述第一铁磁层和所述第二铁磁层之间的第一非磁性层; 具有可变磁化方向的第三铁磁层; 以及具有在第二方向上基本固定的磁化的第四铁磁层，其中所述第一和第二方向中的至少一个大致垂直于所述膜平面。第二铁磁层的磁化方向可以通过使电流沿大致垂直于层叠体的层的膜平面的方向流过电流的方向来确定，并且第三铁磁层的磁化能够通过传递目前进行进攻。

9. 发明授权

US08085582B2 Magnetic recording device and magnetic recording apparatus 有权
标题翻译：磁记录装置和磁记录装置
公开(公告)号：US08085582B2
公开(公告)日：2011-12-27
申请号：US12216918
申请日：2008-07-11
申请人： Shiho Nakamura , Hirofumi Morise , Satoshi Yanagi , Daisuke Saida , Akira Kikitsu
发明人： Shiho Nakamura , Hirofumi Morise , Satoshi Yanagi , Daisuke Saida , Akira Kikitsu
IPC分类号： G11C11/14 , G11C11/15 , G11C11/16 , G11C11/02
CPC分类号： G11C11/22 , G11B5/66 , G11C11/16 , G11C11/161 , G11C11/1675
摘要： A magnetic recording device includes: a laminated body including: a first ferromagnetic layer with a magnetization substantially fixed in a first direction; a second ferromagnetic layer with a variable magnetization direction; a first nonmagnetic layer disposed between the first ferromagnetic layer and the second ferromagnetic layer; and a third ferromagnetic layer with a variable magnetization direction. The magnetization direction of the second ferromagnetic layer is determinable in response to the orientation of a current, by allowing electrons spin-polarized by passing a current in a direction generally perpendicular to the film plane of the layers of the laminated body to act on the second ferromagnetic layer, and by allowing a magnetic field generated by precession of the magnetization of the third ferromagnetic layer to act on the second ferromagnetic layer.
摘要翻译：磁记录装置包括：层叠体，包括：第一铁磁层，其具有基本上沿第一方向固定的磁化; 具有可变磁化方向的第二铁磁层; 设置在所述第一铁磁层和所述第二铁磁层之间的第一非磁性层; 和具有可变磁化方向的第三铁磁层。第二铁磁层的磁化方向可以响应于电流的取向而被确定，通过使电子通过沿着大体上垂直于层叠体的层的膜平面的方向的电流进行自旋极化来作用于第二铁磁层，并且通过允许由第三铁磁层的磁化进行而产生的磁场作用在第二铁磁层上。

10. 发明申请

US20090015958A1 Magnetic recording device and magnetic recording apparatus 有权
标题翻译：磁记录装置和磁记录装置
公开(公告)号：US20090015958A1
公开(公告)日：2009-01-15
申请号：US12216918
申请日：2008-07-11
申请人： Shiho Nakamura , Hirofumi Morise , Satoshi Yanagi , Daisuke Saida , Akira Kikitsu
发明人： Shiho Nakamura , Hirofumi Morise , Satoshi Yanagi , Daisuke Saida , Akira Kikitsu
IPC分类号： G11B5/02 , G11B5/62
CPC分类号： G11C11/22 , G11B5/66 , G11C11/16 , G11C11/161 , G11C11/1675
摘要： A magnetic recording device includes: a laminated body including: a first ferromagnetic layer with a magnetization substantially fixed in a first direction; a second ferromagnetic layer with a variable magnetization direction; a first nonmagnetic layer disposed between the first ferromagnetic layer and the second ferromagnetic layer; and a third ferromagnetic layer with a variable magnetization direction. The magnetization direction of the second ferromagnetic layer is determinable in response to the orientation of a current, by allowing electrons spin-polarized by passing a current in a direction generally perpendicular to the film plane of the layers of the laminated body to act on the second ferromagnetic layer, and by allowing a magnetic field generated by precession of the magnetization of the third ferromagnetic layer to act on the second ferromagnetic layer.
摘要翻译：磁记录装置包括：层叠体，包括：第一铁磁层，其具有基本上沿第一方向固定的磁化; 具有可变磁化方向的第二铁磁层; 设置在所述第一铁磁层和所述第二铁磁层之间的第一非磁性层; 和具有可变磁化方向的第三铁磁层。第二铁磁层的磁化方向可以响应于电流的取向而被确定，通过使电流通过沿着大体上垂直于层叠体的层的膜平面的方向的电流进行自旋极化以作用于第二铁磁层铁磁层，并且通过允许由第三铁磁层的磁化进行而产生的磁场作用在第二铁磁层上。

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