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81. 发明申请

US20130145262A1 Visual Interface Browser 有权
标题翻译：视觉界面浏览器
公开(公告)号：US20130145262A1
公开(公告)日：2013-06-06
申请号：US13311870
申请日：2011-12-06
申请人： Brian Lee
发明人： Brian Lee
IPC分类号： G06F17/00 , G06F3/01
CPC分类号： G06F17/30716
摘要： The present disclosure describes viewing visual interface documents through a visual interface browser. A visual interface browser is caused to be displayed on a user device. A visual interface document representing a technical interface specification is retrieved from a repository in response to user selection of a technical interface icon through the visual interface browser. Sub-document technical data associated with the visual interface document is retrieved from the repository. The visual interface document including sub-document technical data is caused to be displayed on the user device. Notes associated with the visual interface document and associated with an authenticated user of the user device are caused to be displayed on the user device.
摘要翻译：本公开描述了通过可视界面浏览器查看视觉界面文档。使可视界面浏览器显示在用户设备上。响应于用户通过可视界面浏览器选择技术界面图标，从存储库检索表示技术接口规范的视觉界面文档。从存储库检索与视觉界面文档相关联的子文档技术数据。使包含子文档技术数据的视觉界面文档显示在用户设备上。使与用户设备的认证用户相关联的与可视界面文档相关联的注释被显示在用户设备上。

82. 发明申请

US20120153413A1 Non-Volatile Memory Cell with Lateral Pinning 失效
标题翻译：具有侧向固定的非易失性记忆单元
公开(公告)号：US20120153413A1
公开(公告)日：2012-06-21
申请号：US12973536
申请日：2010-12-20
申请人： Haiwen Xi , Antoine Khoueir , Brian Lee , Patrick J. Ryan
发明人： Haiwen Xi , Antoine Khoueir , Brian Lee , Patrick J. Ryan
IPC分类号： H01L29/82 , H01L21/02
CPC分类号： H01L43/08 , B82Y40/00 , G11C11/161 , G11C11/1675 , H01F10/3254 , H01F10/3272 , H01F10/329 , H01F41/303 , H01L43/12
摘要： An apparatus and associated method for a non-volatile memory cell, such as an STRAM cell. In accordance with various embodiments, a magnetic free layer is laterally separated from an antiferromagnetic layer (AFM) by a non-magnetic spacer layer and medially separated from a synthetic antiferromagnetic layer (SAF) by a magnetic tunneling junction. The AFM pins the magnetization of the SAF through contact with a pinning region of the SAF that laterally extends beyond the magnetic tunneling junction.
摘要翻译：用于非易失性存储器单元（例如STRAM单元）的装置和相关方法。根据各种实施例，无磁性层通过非磁性间隔层与反铁磁层（AFM）横向分离，并通过磁性隧道结从中间分离的合成反铁磁层（SAF）。 AFM通过与SAF的钉扎区域的接触来引导SAF的磁化，该区域横向延伸超过磁性隧道结。

83. 发明授权

US08202170B2 Bi-directional clutch without roller elements 有权
标题翻译：无滚轮元件的双向离合器
公开(公告)号：US08202170B2
公开(公告)日：2012-06-19
申请号：US12604133
申请日：2009-10-22
申请人： Tomas Smetana , Brian Lee
发明人： Tomas Smetana , Brian Lee
IPC分类号： F16D3/76
CPC分类号： F16D41/20 , F16D41/06
摘要： Example aspects of the present invention broadly comprise at least two concentric rings with complementary ramped surfaces, at least one of the rings being rotatable relative to another one of the rings so that contact is made at the ramped surfaces. The complementary ramped surfaces form respective circumferences of the rings. At least one of the ramped surfaces may have a sinusoidal profile, or a profile forming at least one of a straight line, concave, or convex. In some example embodiments of the invention, a first one of the rings is a coupling member and a second one of the rings is a tubular slipper with a friction surface radially opposite of the ramped surface. The tubular slipper is arranged to radially expand or contract upon contacting the coupling member.
摘要翻译：本发明的示例性方面广泛地包括具有互补倾斜表面的至少两个同心环，至少一个环可以相对于另一个环可旋转，使得在斜面处形成接触。互补的倾斜表面形成环的相应周长。倾斜表面中的至少一个可以具有正弦曲线或形成直线，凹入或凸起中的至少一个的轮廓。在本发明的一些示例实施例中，第一环是联接构件，并且第二环是具有径向相对于倾斜表面的摩擦表面的管状拖鞋。管状拖鞋布置成在联接构件接触时径向膨胀或收缩。

84. 发明申请

US20120036049A1 SYSTEM AND METHOD FOR SOFTWARE INTEGRATION AND FACTORY DEPLOYMENT 审中-公开
标题翻译：软件集成和工厂部署的系统和方法
公开(公告)号：US20120036049A1
公开(公告)日：2012-02-09
申请号：US13160715
申请日：2011-06-15
申请人： Eric Gerzymisch , Vijayanand Muralidhar Kallianpur , Sean Patrick Kennedy , Masafumi Kuboyama , Brian Lee , Yoshiro Muraoka , Victor Glenn Reha
发明人： Eric Gerzymisch , Vijayanand Muralidhar Kallianpur , Sean Patrick Kennedy , Masafumi Kuboyama , Brian Lee , Yoshiro Muraoka , Victor Glenn Reha
IPC分类号： G06F17/50
CPC分类号： G06F8/61 , G06Q10/087 , G06Q10/0875 , G06Q20/203 , G06Q30/0621 , G06Q30/0623 , G06Q30/0631
摘要： A software management database contains data structures supporting computer software provisioning for a range of CTO/BTO variations, language variations, region variations, and operating system variations.
摘要翻译：软件管理数据库包含支持针对一系列CTO / BTO变体，语言变化，区域变化和操作系统变化的计算机软件配置的数据结构。

85. 发明授权

US08042668B2 Three-mode overrunning bi-directional clutch 有权
标题翻译：三模超越双向离合器
公开(公告)号：US08042668B2
公开(公告)日：2011-10-25
申请号：US11923949
申请日：2007-10-25
申请人： Brian Lee
发明人： Brian Lee
IPC分类号： F16D41/064
CPC分类号： F16D41/088
摘要： The three mode overrunning bi-directional clutch has a first mode where the slipper race and fixed race are coupled and power is not transmitted between the inner input shaft and the outer shaft. A second mode where the slipper race is uncoupled from the fixed race and the slipper race engages the outer shaft to provide power transmission between the inner shaft and the outer shaft. The third mode couples the slipper race to the fixed race but uses a brake to provide radial force against the slipper race to allow for partial engagement between the slipper race and the outer shaft. This third mode allows for a smooth transition between the first mode and the second mode.
摘要翻译：三模式超越双向离合器具有第一模式，其中拖鞋座圈和固定座圈联接，并且动力不在内部输入轴和外部轴之间传递。第二种模式，其中拖鞋圈与固定座脱离，拖鞋座与外轴接合，以在内轴和外轴之间提供动力传递。第三模式将拖鞋座圈与固定座圈连接，但是使用制动器来提供抵靠拖鞋座圈的径向力，以允许拖鞋座和外轴之间的部分接合。该第三模式允许在第一模式和第二模式之间的平滑过渡。

86. 发明申请

US20110188293A1 Non-Volatile Memory Cell With Non-Ohmic Selection Layer 有权
标题翻译：非易失性存储单元与非欧姆选择层
公开(公告)号：US20110188293A1
公开(公告)日：2011-08-04
申请号：US13087087
申请日：2011-04-14
申请人： Wei Tian , Insik Jin , Venugopalan Vaithyanathan , Haiwen Xi , Michael Xuefei Tang , Brian Lee
发明人： Wei Tian , Insik Jin , Venugopalan Vaithyanathan , Haiwen Xi , Michael Xuefei Tang , Brian Lee
IPC分类号： G11C11/00
CPC分类号： G11C11/16 , G11C13/0011 , G11C13/003 , G11C13/0069 , G11C2013/0073 , G11C2213/51 , G11C2213/76 , H01L27/2409 , H01L45/085 , H01L45/1233 , H01L45/1246
摘要： A non-volatile memory cell and associated method is disclosed that includes a non-ohmic selection layer. In accordance with some embodiments, a non-volatile memory cell consists of a resistive sense element (RSE) coupled to a non-ohmic selection layer. The selection layer is configured to transition from a first resistive state to a second resistive state in response to a current greater than or equal to a predetermined threshold.
摘要翻译：公开了一种包括非欧姆选择层的非易失性存储单元和相关联的方法。根据一些实施例，非易失性存储器单元由耦合到非欧姆选择层的电阻感测元件（RSE）组成。响应于大于或等于预定阈值的电流，选择层被配置为从第一电阻状态转变到第二电阻状态。

87. 发明申请

US20110026307A1 VARIABLE RESISTIVE MEMORY PUNCHTHROUGH ACCESS METHOD 有权
公开(公告)号：US20110026307A1
公开(公告)日：2011-02-03
申请号：US12904288
申请日：2010-10-14
申请人： Maroun Georges Khoury , Hongyue Liu , Brian Lee , Andrew John Gjevre Carter
发明人： Maroun Georges Khoury , Hongyue Liu , Brian Lee , Andrew John Gjevre Carter
IPC分类号： G11C11/00
CPC分类号： G11C11/1675 , G11C11/1659
摘要： Variable resistive punchthrough access methods are described. The methods include switching a variable resistive data cell from a high resistance state to a low resistance state by passing a write current through the magnetic tunnel junction data cell in a first direction. The write current is provided by a transistor being electrically coupled to the variable resistive data cell and a source line. The write current passes through the transistor in punchthrough mode.

88. 发明申请

US20110007588A1 Defective Bit Scheme for Multi-Layer Integrated Memory Device 有权
标题翻译：多层集成存储器件缺陷位方案
公开(公告)号：US20110007588A1
公开(公告)日：2011-01-13
申请号：US12502194
申请日：2009-07-13
申请人： Hai Li , Yiran Chen , Dadi Setiadi , Harry Hongyue Liu , Brian Lee
发明人： Hai Li , Yiran Chen , Dadi Setiadi , Harry Hongyue Liu , Brian Lee
IPC分类号： G11C29/00 , G11C29/04 , G11C15/00
CPC分类号： G11C5/04 , G11C5/02 , G11C5/025 , G11C29/44 , G11C29/808 , G11C2029/0403
摘要： Various embodiments of the present invention are generally directed to an apparatus and associated method for handling defective bits in a multi-layer integrated memory device. In accordance with some embodiments, the multi-layer integrated memory device is formed from a plurality of vertically stacked semiconductor layers each having a number of storage sub-arrays and redundant sub-arrays. Each semiconductor layer is tested to determine a defect rate for each array, and a defective portion of a first semiconductor layer having a relatively higher defect rate is stored to a redundant sub-array of a second semiconductor layer having a relatively lower defect rate.
摘要翻译：本发明的各种实施例一般涉及用于处理多层集成存储器件中的不良位的装置和相关方法。根据一些实施例，多层集成存储器件由多个垂直堆叠的半导体层形成，每个半导体层具有多个存储子阵列和冗余子阵列。测试每个半导体层以确定每个阵列的缺陷率，并且将具有相对较高缺陷率的第一半导体层的缺陷部分存储到具有相对较低缺陷率的第二半导体层的冗余子阵列中。

89. 发明申请

US20100110756A1 VARIABLE RESISTIVE MEMORY PUNCHTHROUGH ACCESS METHOD 有权
标题翻译：可变电阻式存储器PUNCHTHROUGH访问方法
公开(公告)号：US20100110756A1
公开(公告)日：2010-05-06
申请号：US12261296
申请日：2008-10-30
申请人： Maroun Georges Khoury , Hongyue Liu , Brian Lee , Andrew John Gjevre Carter
发明人： Maroun Georges Khoury , Hongyue Liu , Brian Lee , Andrew John Gjevre Carter
IPC分类号： G11C11/00 , G11C11/14 , G11C7/00
CPC分类号： G11C11/1675 , G11C11/1659
摘要： Variable resistive punchthrough access methods are described. The methods include switching a variable resistive data cell from a high resistance state to a low resistance state by passing a write current through the magnetic tunnel junction data cell in a first direction. The write current is provided by a transistor being electrically coupled to the variable resistive data cell and a source line. The write current passes through the transistor in punchthrough mode.
摘要翻译：描述了可变电阻穿透访问方法。所述方法包括通过使写入电流沿着第一方向通过磁性隧道结数据单元，将可变电阻数据单元从高电阻状态切换到低电阻状态。写入电流由电耦合到可变电阻数据单元和源极线的晶体管提供。写入电流在穿通模式下通过晶体管。

90. 发明申请

US20100102406A1 MAGNETIC STACK DESIGN 有权
标题翻译：磁性堆叠设计
公开(公告)号：US20100102406A1
公开(公告)日：2010-04-29
申请号：US12501632
申请日：2009-07-13
申请人： Haiwen Xi , Antoine Khoueir , Brian Lee , Pat Ryan , Michael Tang , Insik Jin , Paul E. Anderson
发明人： Haiwen Xi , Antoine Khoueir , Brian Lee , Pat Ryan , Michael Tang , Insik Jin , Paul E. Anderson
IPC分类号： H01L29/82
CPC分类号： G01R33/098 , B82Y25/00 , G01R33/093 , G11C11/161 , H01F10/3254 , H01F10/3272 , H01F10/3286 , H01L43/08 , Y10T428/1114 , Y10T428/1143
摘要： A magnetic stack having a free layer having a switchable magnetization orientation, a reference layer having a pinned magnetization orientation, and a barrier layer therebetween. The stack includes an annular antiferromagnetic pinning layer electrically isolated from the free layer and in physical contact with the reference layer. In some embodiments, the reference layer is larger than the free layer.
摘要翻译：具有具有可切换磁化取向的自由层的磁性堆叠，具有钉扎磁化取向的参考层和它们之间的阻挡层。堆叠包括与自由层电隔离并与参考层物理接触的环形反铁磁钉扎层。在一些实施例中，参考层大于自由层。

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