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1. 发明授权

US08541247B2 Non-volatile memory cell with lateral pinning 失效
标题翻译：具有侧向锁定的非易失性存储单元
公开(公告)号：US08541247B2
公开(公告)日：2013-09-24
申请号：US12973536
申请日：2010-12-20
申请人： Haiwen Xi , Antoine Khoueir , Brian Lee , Patrick J. Ryan
发明人： Haiwen Xi , Antoine Khoueir , Brian Lee , Patrick J. Ryan
IPC分类号： H01L27/115
CPC分类号： H01L43/08 , B82Y40/00 , G11C11/161 , G11C11/1675 , H01F10/3254 , H01F10/3272 , H01F10/329 , H01F41/303 , H01L43/12
摘要： An apparatus and associated method for a non-volatile memory cell, such as an STRAM cell. In accordance with various embodiments, a magnetic free layer is laterally separated from an antiferromagnetic layer (AFM) by a non-magnetic spacer layer and medially separated from a synthetic antiferromagnetic layer (SAF) by a magnetic tunneling junction. The AFM pins the magnetization of the SAF through contact with a pinning region of the SAF that laterally extends beyond the magnetic tunneling junction.
摘要翻译：用于非易失性存储器单元（例如STRAM单元）的装置和相关方法。根据各种实施例，无磁性层通过非磁性间隔层与反铁磁层（AFM）横向分离，并通过磁性隧道结从中间分离的合成反铁磁层（SAF）。 AFM通过与SAF的钉扎区域的接触来引导SAF的磁化，该区域横向延伸超过磁性隧道结。

2. 发明申请

US20120153413A1 Non-Volatile Memory Cell with Lateral Pinning 失效
标题翻译：具有侧向固定的非易失性记忆单元
公开(公告)号：US20120153413A1
公开(公告)日：2012-06-21
申请号：US12973536
申请日：2010-12-20
申请人： Haiwen Xi , Antoine Khoueir , Brian Lee , Patrick J. Ryan
发明人： Haiwen Xi , Antoine Khoueir , Brian Lee , Patrick J. Ryan
IPC分类号： H01L29/82 , H01L21/02
CPC分类号： H01L43/08 , B82Y40/00 , G11C11/161 , G11C11/1675 , H01F10/3254 , H01F10/3272 , H01F10/329 , H01F41/303 , H01L43/12
摘要： An apparatus and associated method for a non-volatile memory cell, such as an STRAM cell. In accordance with various embodiments, a magnetic free layer is laterally separated from an antiferromagnetic layer (AFM) by a non-magnetic spacer layer and medially separated from a synthetic antiferromagnetic layer (SAF) by a magnetic tunneling junction. The AFM pins the magnetization of the SAF through contact with a pinning region of the SAF that laterally extends beyond the magnetic tunneling junction.
摘要翻译：用于非易失性存储器单元（例如STRAM单元）的装置和相关方法。根据各种实施例，无磁性层通过非磁性间隔层与反铁磁层（AFM）横向分离，并通过磁性隧道结从中间分离的合成反铁磁层（SAF）。 AFM通过与SAF的钉扎区域的接触来引导SAF的磁化，该区域横向延伸超过磁性隧道结。

3. 发明授权

US07939188B2 Magnetic stack design 有权
标题翻译：磁栈设计
公开(公告)号：US07939188B2
公开(公告)日：2011-05-10
申请号：US12501632
申请日：2009-07-13
申请人： Haiwen Xi , Antoine Khoueir , Brian Lee , Pat Ryan , Michael Tang , Insik Jin , Paul E. Anderson
发明人： Haiwen Xi , Antoine Khoueir , Brian Lee , Pat Ryan , Michael Tang , Insik Jin , Paul E. Anderson
IPC分类号： G11B5/39 , H01F10/08 , H01L43/08 , H01L43/12
CPC分类号： G01R33/098 , B82Y25/00 , G01R33/093 , G11C11/161 , H01F10/3254 , H01F10/3272 , H01F10/3286 , H01L43/08 , Y10T428/1114 , Y10T428/1143
摘要： A magnetic stack having a free layer having a switchable magnetization orientation, a reference layer having a pinned magnetization orientation, and a barrier layer therebetween. The stack includes an annular antiferromagnetic pinning layer electrically isolated from the free layer and in physical contact with the reference layer. In some embodiments, the reference layer is larger than the free layer.
摘要翻译：具有具有可切换磁化取向的自由层的磁性堆叠，具有钉扎磁化取向的参考层和它们之间的阻挡层。堆叠包括与自由层电隔离并与参考层物理接触的环形反铁磁钉扎层。在一些实施例中，参考层大于自由层。

4. 发明授权

US08197953B2 Magnetic stack design 有权
标题翻译：磁栈设计
公开(公告)号：US08197953B2
公开(公告)日：2012-06-12
申请号：US13083693
申请日：2011-04-11
申请人： Haiwen Xi , Antoine Khoueir , Brian Lee , Pat Ryan , Michael Tang , Insik Jin , Paul E. Anderson
发明人： Haiwen Xi , Antoine Khoueir , Brian Lee , Pat Ryan , Michael Tang , Insik Jin , Paul E. Anderson
IPC分类号： G11B5/39 , H01F10/08 , H01L43/08 , H01L43/12
CPC分类号： G01R33/098 , B82Y25/00 , G01R33/093 , G11C11/161 , H01F10/3254 , H01F10/3272 , H01F10/3286 , H01L43/08 , Y10T428/1114 , Y10T428/1143
摘要： A magnetic stack having a free layer having a switchable magnetization orientation, a reference layer having a pinned magnetization orientation, and a barrier layer therebetween. The stack includes an annular antiferromagnetic pinning layer electrically isolated from the free layer and in physical contact with the reference layer. In some embodiments, the reference layer is larger than the free layer.
摘要翻译：具有具有可切换磁化取向的自由层的磁性堆叠，具有钉扎磁化取向的参考层和它们之间的阻挡层。堆叠包括与自由层电隔离并与参考层物理接触的环形反铁磁钉扎层。在一些实施例中，参考层大于自由层。

5. 发明申请

US20100102406A1 MAGNETIC STACK DESIGN 有权
标题翻译：磁性堆叠设计
公开(公告)号：US20100102406A1
公开(公告)日：2010-04-29
申请号：US12501632
申请日：2009-07-13
申请人： Haiwen Xi , Antoine Khoueir , Brian Lee , Pat Ryan , Michael Tang , Insik Jin , Paul E. Anderson
发明人： Haiwen Xi , Antoine Khoueir , Brian Lee , Pat Ryan , Michael Tang , Insik Jin , Paul E. Anderson
IPC分类号： H01L29/82
CPC分类号： G01R33/098 , B82Y25/00 , G01R33/093 , G11C11/161 , H01F10/3254 , H01F10/3272 , H01F10/3286 , H01L43/08 , Y10T428/1114 , Y10T428/1143
摘要： A magnetic stack having a free layer having a switchable magnetization orientation, a reference layer having a pinned magnetization orientation, and a barrier layer therebetween. The stack includes an annular antiferromagnetic pinning layer electrically isolated from the free layer and in physical contact with the reference layer. In some embodiments, the reference layer is larger than the free layer.
摘要翻译：具有具有可切换磁化取向的自由层的磁性堆叠，具有钉扎磁化取向的参考层和它们之间的阻挡层。堆叠包括与自由层电隔离并与参考层物理接触的环形反铁磁钉扎层。在一些实施例中，参考层大于自由层。

6. 发明申请

US20100118579A1 Nand Based Resistive Sense Memory Cell Architecture 有权
标题翻译：基于Nand的电阻感知存储器单元架构
公开(公告)号：US20100118579A1
公开(公告)日：2010-05-13
申请号：US12269656
申请日：2008-11-12
申请人： Harry Hongyue Liu , Haiwen Xi , Antoine Khoueir , Song Xue
发明人： Harry Hongyue Liu , Haiwen Xi , Antoine Khoueir , Song Xue
IPC分类号： G11C5/02 , G11C11/00 , G11C8/00 , G11C11/34
CPC分类号： H01L27/24 , G11C11/1659 , G11C13/0007 , G11C13/003 , G11C2213/32 , G11C2213/34 , G11C2213/75 , H01L27/228
摘要： Various embodiments are directed to an apparatus comprising a semiconductor memory array with non-volatile memory unit cells arranged into a NAND block. Each of the unit cells comprises a resistive sense element connected in parallel with a switching element. The resistive sense elements are connected in series to form a first serial path, and the switching elements are connected in series to form a second serial path parallel to the first serial path. Each resistive sense element is serially connected to an adjacent resistive sense element in the block by a tortuous conductive path having a portion that extends substantially vertically between said elements to provide operational isolation therefor.
摘要翻译：各种实施例涉及一种包括具有布置在NAND块中的非易失性存储器单元的半导体存储器阵列的装置。每个单元电池包括与开关元件并联连接的电阻感测元件。电阻感测元件串联连接以形成第一串行路径，并且开关元件串联连接以形成平行于第一串行路径的第二串行路径。每个电阻感测元件通过具有在所述元件之间基本上垂直延伸的部分的曲折导电路径串联连接到块中的相邻电阻感测元件，以提供对其的操作隔离。

7. 发明申请

US20100072448A1 PLANAR PROGRAMMABLE METALLIZATION MEMORY CELLS 有权
标题翻译：平面可编程金属化记忆细胞
公开(公告)号：US20100072448A1
公开(公告)日：2010-03-25
申请号：US12233770
申请日：2008-09-19
申请人： Antoine Khoueir , Haiwen Xi , Shuiyuan Huang
发明人： Antoine Khoueir , Haiwen Xi , Shuiyuan Huang
IPC分类号： H01L45/00
CPC分类号： H01L45/085 , H01L27/2436 , H01L45/1226 , H01L45/141 , H01L45/143 , H01L45/1658
摘要： Programmable metallization memory cells that have an inert electrode and an active electrode positioned in a non-overlapping manner in relation to a substrate. A fast ion conductor material is in electrical contact with and extends from the inert electrode to the active electrode, the fast ion conductor including superionic clusters extending from the inert electrode to the active electrode. A metal layer extends from the inert electrode to the active electrode, yet is electrically insulated from each of the inert electrode and the active electrode by the fast ion conductor material. Methods for forming programmable metallization cells are also disclosed.
摘要翻译：具有惰性电极和有源电极的可编程金属化存储单元相对于衬底以非重叠的方式定位。快速离子导体材料与惰性电极电接触并延伸到有源电极，快速离子导体包括从惰性电极延伸到有源电极的超离子簇。金属层从惰性电极延伸到有源电极，但是通过快速离子导体材料与惰性电极和有源电极中的每一个电绝缘。还公开了用于形成可编程金属化电池的方法。

8. 发明授权

US08363442B2 NAND based resistive sense memory cell architecture 有权
标题翻译：基于NAND的电阻式读写单元架构
公开(公告)号：US08363442B2
公开(公告)日：2013-01-29
申请号：US12903716
申请日：2010-10-13
申请人： Harry Hongyue Liu , Haiwen Xi , Antoine Khoueir , Song Xue
发明人： Harry Hongyue Liu , Haiwen Xi , Antoine Khoueir , Song Xue
IPC分类号： G11C5/02
CPC分类号： H01L27/24 , G11C11/1659 , G11C13/0007 , G11C13/003 , G11C2213/32 , G11C2213/34 , G11C2213/75 , H01L27/228
摘要： Various embodiments are directed to an apparatus comprising a semiconductor memory array with non-volatile memory unit cells arranged into a NAND block. Each of the unit cells comprises a resistive sense element connected in parallel with a switching element. The resistive sense elements are connected in series to form a first serial path, and the switching elements are connected in series to form a second serial path parallel to the first serial path. Each resistive sense element is serially connected to an adjacent resistive sense element in the block by a tortuous conductive path having a portion that extends substantially vertically between said elements to provide operational isolation therefor.
摘要翻译：各种实施例涉及一种包括具有布置在NAND块中的非易失性存储器单元的半导体存储器阵列的装置。每个单元电池包括与开关元件并联连接的电阻感测元件。电阻感测元件串联连接以形成第一串行路径，并且开关元件串联连接以形成平行于第一串行路径的第二串行路径。每个电阻感测元件通过具有在所述元件之间基本上垂直延伸的部分的曲折导电路径串联连接到块中的相邻电阻感测元件，以提供对其的操作隔离。

9. 发明申请

US20100208513A1 MEMORY WITH SEPARATE READ AND WRITE PATHS 有权
标题翻译：具有单独读取和写入数据的存储器
公开(公告)号：US20100208513A1
公开(公告)日：2010-08-19
申请号：US12774016
申请日：2010-05-05
申请人： Haiwen Xi , Hongyue Liu , Michael Xuefei Tang , Antoine Khoueir , Song S. Xue
发明人： Haiwen Xi , Hongyue Liu , Michael Xuefei Tang , Antoine Khoueir , Song S. Xue
IPC分类号： G11C11/00 , G11C7/00
CPC分类号： G11C11/161 , G11C11/1655 , G11C11/1657 , G11C11/1659 , G11C11/1673 , G11C11/1675
摘要： A memory unit includes a giant magnetoresistance cell electrically coupled between a write bit line and a write source line. The giant magnetoresistance cell includes a free magnetic layer separated from a first pinned magnetic layer by a first non-magnetic electrically conducting layer. A magnetic tunnel junction data cell is electrically coupled between a read bit line and a read source line. The magnetic tunnel junction data cell includes the free magnetic layer separated from a second pinned magnetic layer by an oxide barrier layer. A write current passes through the giant magnetoresistance cell to switch the giant magnetoresistance cell between a high resistance state and a low resistance state. The magnetic tunnel junction data cell is configured to switch between a high resistance state and a low resistance state by magnetostatic coupling with the giant magnetoresistance cell, and be read by a read current passing though the magnetic tunnel junction data cell.
摘要翻译：存储单元包括电耦合在写位线和写入源线之间的巨磁电阻单元。巨磁阻单元包括通过第一非磁性导电层与第一固定磁性层分离的自由磁性层。磁性隧道结数据单元电耦合在读取位线和读取源极线之间。磁性隧道结数据单元包括通过氧化物阻挡层与第二固定磁性层分离的自由磁性层。写入电流通过巨磁电阻单元，以将巨磁阻单元切换到高电阻状态和低电阻状态之间。磁隧道结数据单元被配置为通过与巨磁电阻单元的静磁耦合在高电阻状态和低电阻状态之间切换，并且通过通过磁性隧道结数据单元的读取电流来读取。

10. 发明授权

US08422278B2 Memory with separate read and write paths 有权
标题翻译：内存具有单独的读写路径
公开(公告)号：US08422278B2
公开(公告)日：2013-04-16
申请号：US12974679
申请日：2010-12-21
申请人： Haiwen Xi , Hongyue Liu , Michael Xuefei Tang , Antoine Khoueir , Song S. Xue
发明人： Haiwen Xi , Hongyue Liu , Michael Xuefei Tang , Antoine Khoueir , Song S. Xue
IPC分类号： G11C11/15
CPC分类号： G11C11/161 , G11C11/1655 , G11C11/1657 , G11C11/1659 , G11C11/1673 , G11C11/1675
摘要： A memory unit includes a giant magnetoresistance cell electrically coupled between a write bit line and a write source line. The giant magnetoresistance cell includes a free magnetic layer separated from a first pinned magnetic layer by a first non-magnetic electrically conducting layer. A magnetic tunnel junction data cell is electrically coupled between a read bit line and a read source line. The magnetic tunnel junction data cell includes the free magnetic layer separated from a second pinned magnetic layer by an oxide barrier layer. A write current passes through the giant magnetoresistance cell to switche the giant magnetoresistance cell between a high resistance state and a low resistance state. The magnetic tunnel junction data cell is configured to switch between a high resistance state and a low resistance state by magnetostatic coupling with the giant magnetoresistance cell, and be read by a read current passing though the magnetic tunnel junction data cell.
摘要翻译：存储单元包括电耦合在写位线和写入源线之间的巨磁电阻单元。巨磁阻单元包括通过第一非磁性导电层与第一固定磁性层分离的自由磁性层。磁性隧道结数据单元电耦合在读取位线和读取源极线之间。磁性隧道结数据单元包括通过氧化物阻挡层与第二固定磁性层分离的自由磁性层。写入电流通过巨磁电阻单元，以在高电阻状态和低电阻状态之间切换巨磁电阻单元。磁隧道结数据单元被配置为通过与巨磁电阻单元的静磁耦合在高电阻状态和低电阻状态之间切换，并且通过通过磁性隧道结数据单元的读取电流来读取。

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