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81. 发明专利

JP2003213438A PLATING APPARATUS AND PLATING METHOD 审中-公开
公开(公告)号：JP2003213438A
公开(公告)日：2003-07-30
申请号：JP2002005056
申请日：2002-01-11
申请人： EBARA CORP
发明人： O CHIKAAKI , MISHIMA KOJI , ABE KENICHI
IPC分类号： C23C18/31 , C23C18/16
摘要： PROBLEM TO BE SOLVED: To provide a plating apparatus and a plating method capable of easily depositing a uniform plating film on a surface to be plated by uniformly preheating a work over the entire surface, and easily increasing the throughput. SOLUTION: The plating apparatus comprises a plating tank 14 which is open upwardly to store heated electrolyte 12, a stage 16 which is disposed inside the plating tank 14, and seals and holds a back side of a work W with a surface to be plated of the work facing upwardly, and an electrolyte level regulating unit 42 which regulates the level of the electrolyte 12 in the plating tank 14 to the level slightly lower than the surface of the stage 16 in a non- plating mode, and to the level at which the work W held by the stage 16 is dipped in the electrolyte 12 in a plating mode. COPYRIGHT: (C)2003,JPO

82. 发明专利

JP2003147537A PLATING APPARATUS, AND PLATING METHOD 审中-公开
公开(公告)号：JP2003147537A
公开(公告)日：2003-05-21
申请号：JP2001337850
申请日：2001-11-02
申请人： EBARA CORP
发明人： O CHIKAAKI , ABE KENICHI , MISHIMA KOJI
IPC分类号： C23C18/31 , C23C18/16 , H01L21/288 , H01L21/768
摘要： PROBLEM TO BE SOLVED: To provide a relatively simple plating apparatus in which the temperature of a plating solution in the process of plating is more uniformly controlled to easily form a uniform plating film on the face to be plated in the material to be treated, and a foot print can be reduced. SOLUTION: The plating apparatus has a plating tank 18 with a double tank structure having an inner tank 14 retaining a plating solution 12 at the inside, and performing plating treatment, and an outer tank 26 surrounding the circumference of the inner tank 14, and communicated with the inner tank 14, and a heating apparatus 30 arranged at the inside of the outer tank 26. If required, the apparatus has a means 32 of circulating or stirring the plating solution 12 at the inside, and stopping the flow of the plating solution 12 at the inside of the plating tank 18 on plating treatment.

83. 发明专利

JP2002235192A METHOD AND APPARATUS FOR ELECTROLYTIC TREATMENT 失效
公开(公告)号：JP2002235192A
公开(公告)日：2002-08-23
申请号：JP2000396188
申请日：2000-12-26
申请人： TOSHIBA CORP , EBARA CORP
发明人： MATSUDA TETSURO , KANEKO HISAFUMI , MISHIMA KOJI , MAKINO NATSUKI , KUNISAWA JUNJI , INOUE HIROAKI , KIMURA NORIO , ODAGAKI MITSUKO , TSUJIMURA MANABU
IPC分类号： C25D7/12 , C25D17/00 , C25F7/00 , H01L21/288 , H05K3/18
摘要： PROBLEM TO BE SOLVED: To provide a method and an apparatus for electrolytic treatment that enable a uniform electrolytic treatment in a substrate plane without changing the thickness and the film type of a conductive layer, the electrolyte of a plating solution, and the like. SOLUTION: In at least a part of the electrolytic solution 10 filled between a substrate W to be treated that has a contact point with one of a positive or a negative electrode and the other electrode 14 that is placed oppositely to the substrate W, there is installed a high resistance structure 22 having an electrical conductivity smaller than that of the electrolytic solution 10, and then, the electrolytic treatment is performed on the surface of the substrate W.

84. 发明专利

JP2002190455A APPARATUS FOR MANUFACTURING SEMICONDUCTOR SUBSTRATE 失效
公开(公告)号：JP2002190455A
公开(公告)日：2002-07-05
申请号：JP2001050916
申请日：2001-02-26
申请人： EBARA CORP , TOSHIBA CORP
发明人： KIMURA NORIO , MISHIMA KOJI , KUNISAWA JUNJI , MAKINO NATSUKI , TSUJIMURA MANABU , MATSUDA TETSURO , KANEKO HISAFUMI , OKUMURA KATSUYA
IPC分类号： C23C18/16 , C23C30/00 , C25D7/12 , C25D19/00 , H01L21/28 , H01L21/288 , H01L21/3205
摘要： PROBLEM TO BE SOLVED: To provide an apparatus for manufacturing a semiconductor substrate, capable of reducing the initial cost and the running cost of the apparatus and forming circuit wirings in a short treating time, without requiring a large installation space. SOLUTION: The apparatus for manufacturing the semiconductor substrate comprises a loader/unloader 1 for conveying and delivering the substrate, in which grooves and/holes for a wiring pattern are formed on the surface; and a barrier layer and a power supply seed layer are formed sequentially therein in a dry state; a Cu-plating film-forming film unit 2 for electrolytically plate-like forming a Cu-plating film layer on the board carried in; polishing units 10, 11 for polishing and removing the plating film layer; the seed layer and the barrier layer, except the part filled in the groove and/holes of the board formed with the plated film layer; first, second and third cleaning units 9, 7, 4 for cleaning and drying the board in which the layers are removed; and first and second robots 3, 8 for transferring the board between the sections.

85. 发明专利

JP2002167693A METHOD AND APPARATUS FOR ELECTROLYTIC PLATING OF SUBSTRATE 审中-公开
公开(公告)号：JP2002167693A
公开(公告)日：2002-06-11
申请号：JP2001248125
申请日：2001-08-17
申请人： EBARA CORP , TOSHIBA CORP
发明人： MISHIMA KOJI , INOUE HIROAKI , MAKINO NATSUKI , KUNISAWA JUNJI , NAKAMURA KENJI , MATSUDA TETSURO , KANEKO HISAFUMI , MORITA TOSHIYUKI
IPC分类号： C25D7/12 , C25D5/10 , C25D17/00 , C25D21/00 , C25D21/02 , C25D21/14 , H01L21/288
摘要： PROBLEM TO BE SOLVED: To provide a method and a apparatus for electrolytic plating of a substrate in which copper can be imbedded in a fine wiring pattern by using plating solution of high uniform electrodeposition property and high leveling property, the plating film thickness is substantially equal for both a wiring part and a non-wiring part, and CMP is easy. SOLUTION: A space 99 formed of the substrate W and an anode 98 disposed close to and substantially parallel to the substrate W is filled with plating solution containing metal ion and additives, and the concentration of the additive in the plating solution in the plating space 99 is changed during the plating operation.

86. 发明专利

JP2002129342A METHOD AND APPARATUS FOR ELECTROLESS PLATING 失效
公开(公告)号：JP2002129342A
公开(公告)日：2002-05-09
申请号：JP2000327799
申请日：2000-10-26
申请人： EBARA CORP
发明人： INOUE HIROAKI , MISHIMA KOJI , KARIMATA TSUTOMU , NAKAMURA KENJI , MATSUMOTO MORIHARU
IPC分类号： C23C18/16 , H01L21/288
摘要： PROBLEM TO BE SOLVED: To provide a method and an apparatus for electroless plating, which simplify the apparatus, reduce the cost, improve throughput, and electroless plate stably and surely. SOLUTION: The method for electroless plating for forming a wiring, a wiring protecting film, or a diffusion preventing film of a semiconductor substrate W with electroless plating comprises steps of; immersing a substrate holding means 10 for holding several pieces of semiconductor substrates W in parallel, into a plating solution of a plating tank 40; keeping the substrate holding means 10 in the plating solution for the predetermined time, and simultaneously electroless plating each surface to be plated of the several semiconductor substrates W; taking the substrate holding means 10 out from the plating solution; immersing the several semiconductor substrates W held in the substrate holding means 10 into a washing tank 51, and simultaneously washing them; and spin rotating the several semiconductor substrates W held in the substrate holding means 10, and simultaneously drying them.

87. 发明专利

JP2002057199A SUBSTRATE PROCESSOR 失效
公开(公告)号：JP2002057199A
公开(公告)日：2002-02-22
申请号：JP2000244355
申请日：2000-08-11
申请人： EBARA CORP , TOSHIBA CORP
发明人： KUNISAWA JUNJI , KIMURA NORIO , MISHIMA KOJI , MAKINO NATSUKI , MATSUDA TETSURO , KANEKO HISAFUMI
IPC分类号： H01L21/677 , H01L21/68
摘要： PROBLEM TO BE SOLVED: To provide a wafer processor capable of easily and accurately detecting various wafer surface states such as film thickness without stopping conveying or processing while conveying or processing a wafer not to lower a throughput. SOLUTION: In the wafer processor for conveying or processing a wafer W in the state of holding the wafer W with a robot hand 40 while having the robot hand 40 for holding the wafer W, the robot hand 40 is provided with a sensor S for measuring the film thickness of the wafer W and on the basis of a signal detected by this sensor S while conveying or processing the wafer W, the film thickness of the wafer W is measured. Thus, the metal film thickness of the wafer W can be measured without stopping/interrupting a wafer processing process and while providing a high throughput, the film thickness can be made constant.

88. 发明专利

JP2001342573A METHOD AND APPARATUS FOR ELECTROLESS PLATING 失效
公开(公告)号：JP2001342573A
公开(公告)日：2001-12-14
申请号：JP2000165801
申请日：2000-06-02
申请人： EBARA CORP , TOSHIBA CORP
发明人： INOUE HIROAKI , NAKAMURA KENJI , MATSUMOTO MORIHARU , MISHIMA KOJI , MATSUDA TETSURO , KANEKO HISAFUMI
IPC分类号： C23C18/16 , C23C18/31 , H01L21/288
摘要： PROBLEM TO BE SOLVED: To provide a method and an apparatus for an electroless plating which reduces an amount of a plating solution used, stabilizes the plating process, downsizes the apparatus, reduces the cost, and gives a uniform film thickness. SOLUTION: The method for the electroless plating on a surface to be plated comprises, holding a semiconductor substrate W with a surface to be plated upward on a substrate holding part 11, supplying the electroless plating solution into a weir member 31 which is provided in surroundings of the semiconductor substrate W, from a shower head 41 and storing it, and holding the substrate in a resting state during plating for a predetermined time.

89. 发明专利

JP2001323398A PLATING DEVICE FOR SUBSTRATE AND PLATING METHOD 失效
公开(公告)号：JP2001323398A
公开(公告)日：2001-11-22
申请号：JP2000153754
申请日：2000-05-24
申请人： EBARA CORP , TOSHIBA CORP
发明人： MAKINO NATSUKI , MISHIMA KOJI , INOUE HIROAKI , KUNISAWA JUNJI , NAKAMURA KENJI , KIMURA NORIO , MATSUDA TETSURO , KANEKO HISAFUMI , TSUJIMURA MANABU , MORITA TOSHIYUKI
IPC分类号： C25D5/04 , C25D5/08 , C25D7/12 , C25D17/00 , C25D17/12 , C25D21/00 , C25D21/04 , H01L21/288 , H01L21/3205 , H01L23/52 , H05K3/18
摘要： PROBLEM TO BE SOLVED: To enable a plating treatment and a related treatment with a single unit and to prevent remaining air bubbles in a plating liquid filled between a surface of a substrate and an anode. SOLUTION: This device has a substrate holding section 36 which holds a substrate by upwardly directing its surface to be plated, a cathode electrode 88 which is energized by coming into contact with the substrate held by the substrate holding section, an electrode arm section 30 which is disposed above the substrate and has an anode 98 so as to face downward and a plating liquid injecting means which injects a plating liquid into the space between the surface to be plated of the substrate held by the substrate holding section and the anode 98 if the electrode arm section 30 brought into proximity to the surface to be plated. The plating liquid injecting means is so constituted that the plating liquid is injected from a vertically penetrating plating injecting hole disposed in part of the anode 98 or a nozzle arranged in the outer peripheral part of the anode to the under surface side of the anode and spreads to the entire surface of the surface to be plated of the substrate.

90. 发明专利

JP2000256896A PLATING DEVICE 失效
公开(公告)号：JP2000256896A
公开(公告)日：2000-09-19
申请号：JP6498799
申请日：1999-03-11
申请人： EBARA CORP
发明人： SENDAI SATOSHI , HONGO AKIHISA , MISHIMA KOJI
IPC分类号： C25D17/00 , C25D5/08 , C25D7/12 , C25D21/00 , H01L21/288
摘要： PROBLEM TO BE SOLVED: To provide a plating device which is capable of reducing the depth of a plating tank by flowing a plating solution parallel to a plating surface of a substrate to be plated, unifying the relative speed between the substrate to be plated and the plating solution, uniform in adsorption of an additive as a plating inhibitor or promoter over the whole surface of the substrate to be plated, excellent in embedding property of the metal plating into fine pores and grooves in the substrate to be plated, and is capable of providing the metal plating uniform in film thickness. SOLUTION: In a plating device having a plating tank in which the metal plating is implemented by bringing a plating solution into contact with a plating surface of a substrate to be plated in the plating tank, the plating tank 10 is arranged with the plating surface of the substrate 13 to be plated facing downward, a flat plating solution chamber 20 is provided below the substrate 13 to be plated, a plating solution inlet 22 to allow the plating solution Q in the plating solution chamber 20 and a plating solution outlet 23 to allow the plating solution Q from a plating solution flow area are arranged away therefrom over the outside diameter of the substrate 13 to be plated oppositely to each other across the substrate 13 to be plated so that the plating solution Q flowing in the plating solution chamber 20 flows parallel to the plating surface while being brought into contact with the plating surface of the substrate 13.

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