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1. 发明专利

JP2005264339A Electrolytic treatment method and apparatus therefor 审中-公开
标题翻译：电解处理方法及其设备
公开(公告)号：JP2005264339A
公开(公告)日：2005-09-29
申请号：JP2005161668
申请日：2005-06-01
申请人： Ebara Corp , Toshiba Corp , 株式会社東芝 , 株式会社荏原製作所
发明人： MATSUDA TETSURO , KANEKO HISAFUMI , MISHIMA KOJI , MAKINO NATSUKI , KUNISAWA JUNJI , INOUE HIROAKI , KIMURA NORIO , ODAGAKI MITSUKO , TSUJIMURA MANABU
IPC分类号： C25D7/12 , C25D17/00 , C25D17/10 , C25D17/12 , C25F7/00
摘要： PROBLEM TO BE SOLVED: To uniformly electrolyze over a substrate without varying thickness or materials of a conductive layer or an electrolytic solution such as a plating liquid.
SOLUTION: The apparatus is equipped with: a substrate mount 30 where a substrate W to be treated is horizontally mounted with the top surface facing upward; a lip seal 34 to be in contact with the surface peripheral edge of the objective substrate W mounted on the substrate mount 30 and to seal the peripheral edge; a contact point 36 disposed outside the lip seal 34 and in contact with the peripheral edge of the objective substrate W mounted on the substrate mount 30 so as to introduce the potential of either a cathode or an anode into the substrate W; the other electrode 38 disposed above the objective substrate W mounted on the substrate mount 30; and a high resistance structure 40 disposed between the objective substrate W mounted on the substrate mount 30 and the other electrode 38. Electrolytic treatment is carried out by filling the space between the objective substrate W mounted on the substrate mount 30 and the other electrode 38 with an electrolytic solution 10.
COPYRIGHT: (C)2005,JPO&NCIPI
摘要翻译：要解决的问题：在不改变导电层或诸如电镀液的电解液的厚度或材料的基板上均匀地电解。解决方案：该装置配备有：基板安装件30，其中要处理的基板W水平安装，顶表面面向上; 唇形密封件34，其与安装在基板安装件30上的物镜基板W的表面周缘接触并密封周边边缘; 接触点36，其设置在唇形密封件34的外侧并与安装在基板安装件30上的物镜基板W的周缘接触，以将阴极或阳极的电位引入基板W; 设置在安装在基板安装件30上的物镜基板W上方的另一电极38; 以及设置在安装在基板安装件30上的目标基板W与另一个电极38之间的高电阻结构40.电解处理通过将安装在基板安装件30上的目标基板W与另一个电极38之间的空间填充，电解液10.版权所有（C）2005，JPO＆NCIPI

2. 发明专利

JP2002235192A METHOD AND APPARATUS FOR ELECTROLYTIC TREATMENT 失效
公开(公告)号：JP2002235192A
公开(公告)日：2002-08-23
申请号：JP2000396188
申请日：2000-12-26
申请人： TOSHIBA CORP , EBARA CORP
发明人： MATSUDA TETSURO , KANEKO HISAFUMI , MISHIMA KOJI , MAKINO NATSUKI , KUNISAWA JUNJI , INOUE HIROAKI , KIMURA NORIO , ODAGAKI MITSUKO , TSUJIMURA MANABU
IPC分类号： C25D7/12 , C25D17/00 , C25F7/00 , H01L21/288 , H05K3/18
摘要： PROBLEM TO BE SOLVED: To provide a method and an apparatus for electrolytic treatment that enable a uniform electrolytic treatment in a substrate plane without changing the thickness and the film type of a conductive layer, the electrolyte of a plating solution, and the like. SOLUTION: In at least a part of the electrolytic solution 10 filled between a substrate W to be treated that has a contact point with one of a positive or a negative electrode and the other electrode 14 that is placed oppositely to the substrate W, there is installed a high resistance structure 22 having an electrical conductivity smaller than that of the electrolytic solution 10, and then, the electrolytic treatment is performed on the surface of the substrate W.

3. 发明专利

JP2002190455A APPARATUS FOR MANUFACTURING SEMICONDUCTOR SUBSTRATE 失效
公开(公告)号：JP2002190455A
公开(公告)日：2002-07-05
申请号：JP2001050916
申请日：2001-02-26
申请人： EBARA CORP , TOSHIBA CORP
发明人： KIMURA NORIO , MISHIMA KOJI , KUNISAWA JUNJI , MAKINO NATSUKI , TSUJIMURA MANABU , MATSUDA TETSURO , KANEKO HISAFUMI , OKUMURA KATSUYA
IPC分类号： C23C18/16 , C23C30/00 , C25D7/12 , C25D19/00 , H01L21/28 , H01L21/288 , H01L21/3205
摘要： PROBLEM TO BE SOLVED: To provide an apparatus for manufacturing a semiconductor substrate, capable of reducing the initial cost and the running cost of the apparatus and forming circuit wirings in a short treating time, without requiring a large installation space. SOLUTION: The apparatus for manufacturing the semiconductor substrate comprises a loader/unloader 1 for conveying and delivering the substrate, in which grooves and/holes for a wiring pattern are formed on the surface; and a barrier layer and a power supply seed layer are formed sequentially therein in a dry state; a Cu-plating film-forming film unit 2 for electrolytically plate-like forming a Cu-plating film layer on the board carried in; polishing units 10, 11 for polishing and removing the plating film layer; the seed layer and the barrier layer, except the part filled in the groove and/holes of the board formed with the plated film layer; first, second and third cleaning units 9, 7, 4 for cleaning and drying the board in which the layers are removed; and first and second robots 3, 8 for transferring the board between the sections.

4. 发明专利

JP2002167693A METHOD AND APPARATUS FOR ELECTROLYTIC PLATING OF SUBSTRATE 审中-公开
公开(公告)号：JP2002167693A
公开(公告)日：2002-06-11
申请号：JP2001248125
申请日：2001-08-17
申请人： EBARA CORP , TOSHIBA CORP
发明人： MISHIMA KOJI , INOUE HIROAKI , MAKINO NATSUKI , KUNISAWA JUNJI , NAKAMURA KENJI , MATSUDA TETSURO , KANEKO HISAFUMI , MORITA TOSHIYUKI
IPC分类号： C25D7/12 , C25D5/10 , C25D17/00 , C25D21/00 , C25D21/02 , C25D21/14 , H01L21/288
摘要： PROBLEM TO BE SOLVED: To provide a method and a apparatus for electrolytic plating of a substrate in which copper can be imbedded in a fine wiring pattern by using plating solution of high uniform electrodeposition property and high leveling property, the plating film thickness is substantially equal for both a wiring part and a non-wiring part, and CMP is easy. SOLUTION: A space 99 formed of the substrate W and an anode 98 disposed close to and substantially parallel to the substrate W is filled with plating solution containing metal ion and additives, and the concentration of the additive in the plating solution in the plating space 99 is changed during the plating operation.

5. 发明专利

JP2002057199A SUBSTRATE PROCESSOR 失效
公开(公告)号：JP2002057199A
公开(公告)日：2002-02-22
申请号：JP2000244355
申请日：2000-08-11
申请人： EBARA CORP , TOSHIBA CORP
发明人： KUNISAWA JUNJI , KIMURA NORIO , MISHIMA KOJI , MAKINO NATSUKI , MATSUDA TETSURO , KANEKO HISAFUMI
IPC分类号： H01L21/677 , H01L21/68
摘要： PROBLEM TO BE SOLVED: To provide a wafer processor capable of easily and accurately detecting various wafer surface states such as film thickness without stopping conveying or processing while conveying or processing a wafer not to lower a throughput. SOLUTION: In the wafer processor for conveying or processing a wafer W in the state of holding the wafer W with a robot hand 40 while having the robot hand 40 for holding the wafer W, the robot hand 40 is provided with a sensor S for measuring the film thickness of the wafer W and on the basis of a signal detected by this sensor S while conveying or processing the wafer W, the film thickness of the wafer W is measured. Thus, the metal film thickness of the wafer W can be measured without stopping/interrupting a wafer processing process and while providing a high throughput, the film thickness can be made constant.

6. 发明专利

JP2001323398A PLATING DEVICE FOR SUBSTRATE AND PLATING METHOD 失效
公开(公告)号：JP2001323398A
公开(公告)日：2001-11-22
申请号：JP2000153754
申请日：2000-05-24
申请人： EBARA CORP , TOSHIBA CORP
发明人： MAKINO NATSUKI , MISHIMA KOJI , INOUE HIROAKI , KUNISAWA JUNJI , NAKAMURA KENJI , KIMURA NORIO , MATSUDA TETSURO , KANEKO HISAFUMI , TSUJIMURA MANABU , MORITA TOSHIYUKI
IPC分类号： C25D5/04 , C25D5/08 , C25D7/12 , C25D17/00 , C25D17/12 , C25D21/00 , C25D21/04 , H01L21/288 , H01L21/3205 , H01L23/52 , H05K3/18
摘要： PROBLEM TO BE SOLVED: To enable a plating treatment and a related treatment with a single unit and to prevent remaining air bubbles in a plating liquid filled between a surface of a substrate and an anode. SOLUTION: This device has a substrate holding section 36 which holds a substrate by upwardly directing its surface to be plated, a cathode electrode 88 which is energized by coming into contact with the substrate held by the substrate holding section, an electrode arm section 30 which is disposed above the substrate and has an anode 98 so as to face downward and a plating liquid injecting means which injects a plating liquid into the space between the surface to be plated of the substrate held by the substrate holding section and the anode 98 if the electrode arm section 30 brought into proximity to the surface to be plated. The plating liquid injecting means is so constituted that the plating liquid is injected from a vertically penetrating plating injecting hole disposed in part of the anode 98 or a nozzle arranged in the outer peripheral part of the anode to the under surface side of the anode and spreads to the entire surface of the surface to be plated of the substrate.

7. 发明专利

JP2002105695A PLATING APPARATUS AND PLATING METHOD 失效
公开(公告)号：JP2002105695A
公开(公告)日：2002-04-10
申请号：JP2000294665
申请日：2000-09-27
申请人： EBARA CORP , TOSHIBA CORP
发明人： KUNISAWA JUNJI , MAKINO NATSUKI , MISHIMA KOJI , MATSUDA TETSURO , KANEKO HISAFUMI , MORITA TOSHIYUKI
IPC分类号： C25D5/04 , C25D7/12 , C25D17/06 , C25D21/00 , C25D21/12 , H01L21/288
摘要： PROBLEM TO BE SOLVED: To provide a plating apparatus and a plating method by which film deposition can be performed so that the thickness of a plating film to be deposited on a substrate is made uniform in the whole face of the substrate. SOLUTION: In this plating device in which an anode 98 is oppositely arranged parallel to a substrate W so as to be separated from the substrate W, and, while a plating solution is fed to the space between the substrate W and the anode 98, a current is supplied to deposit a plating film on the surface of the substrate W, moving devices 46 and 99 for moving the part of the substrate W to be confronted with the anode 98 so that the period for which the part on the central side of the surface of the substrate W is confronted with the anode 98 is made longer than the period for which the part on the outer circumferential side of the surface of the substrate W is confronted with the anode 98 are equipped.

8. 发明专利

JP2001316877A ELECTROLYSIS EQUIPMENT 失效
公开(公告)号：JP2001316877A
公开(公告)日：2001-11-16
申请号：JP2000132015
申请日：2000-05-01
申请人： EBARA CORP , TOSHIBA CORP
发明人： MAKINO NATSUKI , MISHIMA KOJI , INOUE HIROAKI , KUNISAWA JUNJI , NAKAMURA KENJI , KIMURA NORIO , ODAGAKI MITSUKO , TSUJIMURA MANABU , MATSUDA TETSURO , KANEKO HISAFUMI , MORITA TOSHIYUKI
IPC分类号： C25D5/08 , C25D7/12 , C25D17/00 , C25D17/12 , C25D21/04 , C25D21/12 , H01L21/288 , H01L21/60
摘要： PROBLEM TO BE SOLVED: To provide an electrolysis equipment, in which bubbles are not trapped and accumulated between an electrolyte impregnation material (a porous body) and a substrate to be treated, in spite of having a structure in which the electrolyte is supplied from the opposite side of the electrolyte impregnation material against the substrate into the impregnation material and is filled between an electrolyte impregnation material and a substrate. SOLUTION: This electrolysis equipment is aimed at electrolysis of the substrate to be treated W in the electrolyte filled between the substrate W and an anode 38. Electrolyte conduction holes 39 are provided in anode 38 for supplying the electrolyte into the electrolyte impregnation material 40 consisting of a water retaining material, which is joined to the face of the substrate W side of the anode 38, and tubes 45 consisting of the corrosion resistant material to the electrolyte are inserted into of the electrolyte conduction hole 39, then the supplied electrolyte in the electrolyte impregnation material 40 through the tubes 45 is supplied in between the electrolyte impregnation material and the substrate from the opposite side of the electrolyte impregnation materials 40.

9. 发明专利

JP2001240996A PLATING DEVICE FOR SUBSTRATE AND PLATING METHOD 失效
公开(公告)号：JP2001240996A
公开(公告)日：2001-09-04
申请号：JP2000369201
申请日：2000-12-04
申请人： EBARA CORP , TOSHIBA CORP
发明人： KUNISAWA JUNJI , ODAGAKI MITSUKO , MAKINO NATSUKI , MISHIMA KOJI , NAKAMURA KENJI , INOUE HIROAKI , KIMURA NORIO , MATSUDA TETSURO , KANEKO HISAFUMI , HAYASAKA NOBUO , OKUMURA KATSUYA
IPC分类号： C25D7/12 , C25D17/00 , C25D21/00
摘要： PROBLEM TO BE SOLVED: To provide a plating device and plating method capable of executing a plating treatment and its associated treatment with a single unit. SOLUTION: This device has a substrate holding section 36 which horizontally holds a substrate by upwardly directing its surface to be plated and rotates the substrate, a sealing material 90 which abuts on the peripheral edge of the surface to be plated of the substrate held by this substrate holding section 36 and water-tightly seals the peripheral edge and a cathode electrode 88 which energizes the substrate by coming into contact therewith. The device has a cathode section 38 which rotates integrally with the substrate holding section 36, an electrode arm section 30 which is freely horizontally and perpendicularly movably arranged above the cathode section 38 and has a downwardly facing anode 98, and a plating liquid injecting means which injects a plating liquid into the space between the surface to be plated of the substrate held by the substrate holding section 36 and the anode 98 of the electrode arm section 30 held in proximity to the surface to be plated.

10. 发明专利

JP2007308807A Electrolytic treating device and electric field state control method 审中-公开
标题翻译：电解处理装置和电场状态控制方法
公开(公告)号：JP2007308807A
公开(公告)日：2007-11-29
申请号：JP2007213896
申请日：2007-08-20
申请人： Ebara Corp , Toshiba Corp , 株式会社東芝 , 株式会社荏原製作所
发明人： MAKINO NATSUKI , MISHIMA KOJI , KUNISAWA JUNJI , INOUE HIROAKI , KIMURA NORIO , ODAGAKI MITSUKO , TSUJIMURA MANABU , MATSUDA TETSURO , KANEKO HISAFUMI , MORITA TOSHIYUKI , OKUMURA KATSUYA
IPC分类号： C25D17/10 , C25D7/12 , H01L21/288
摘要： PROBLEM TO BE SOLVED: To provide an electrolytic treating device which makes it possible to obtain the in-plane distribution of a desired plating film thickness by positively controlling the electric field state of the surface of a substrate to be treated and an electric field state control method for the same.
SOLUTION: A plating liquid 10 is filled between an anode 38 and the substrate W to be treated and a high-resistance structure 4 having the electrical conductivity lower than the electrical conductivity of the plating liquid 10 is installed between the anode 38 and the substrate W. The electric field on the surface of the substrate W is controlled by adjusting the thickness of the high resistant structure 4 or the shape of the high resistant structure 4 on a plane surface.
COPYRIGHT: (C)2008,JPO&INPIT

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