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    • 81. 发明授权
    • Moving object tracking
    • 移动对象跟踪
    • US5878151A
    • 1999-03-02
    • US740702
    • 1996-10-31
    • Qing TangZhongxue GanJeffrey Sherman KatzLance Terrance Fitzgibbons
    • Qing TangZhongxue GanJeffrey Sherman KatzLance Terrance Fitzgibbons
    • G06T7/20G06K9/00
    • G06K9/209G06T7/2033G06K2209/19
    • An image of the object remains in the field of view of the camera, thereby generating a continuously changing image signal. The images are captured and digitized in a continual sequence S of discrete images of the scenes at a respective sequence T of points in time. During this capture sequence, a first plurality of reference signals are established corresponding to a plurality of respective captured images. In this manner, a plurality of reference images are generated on-line, during movement of the object or cameras. A second plurality of detected signals corresponding to a second plurality of captured images, are individually correlated with the respective next previous reference signal of the sequence, thereby establishing a relative position of the object or camera, for each detected signal. The absolute position of the camera or object, is determined by accumulating these relative positions.
    • 物体的图像保持在照相机的视野中,从而产生连续变化的图像信号。 以相应的时间点的序列T,在场景的离散图像的连续序列S中拍摄和数字化图像。 在该捕获序列期间,对应于多个相应的捕获图像建立第一多个参考信号。 以这种方式,在物体或照相机的移动期间在线生成多个参考图像。 对应于第二多个拍摄图像的第二多个检测信号与序列的相应的下一个先前参考信号单独相关,从而为每个检测到的信号建立对象或照相机的相对位置。 相机或物体的绝对位置是通过累加这些相对位置来确定的。
    • 82. 发明授权
    • Switch potential electron beam substrate tester
    • 开关电子束基板测试仪
    • US5602489A
    • 1997-02-11
    • US349508
    • 1994-12-02
    • Auguste B. El-KarehQing-Tang JiangMingYang Li
    • Auguste B. El-KarehQing-Tang JiangMingYang Li
    • G01R31/307G01R31/02
    • G01R31/307
    • The present invention describes a method for testing the interconnect networks of a multichip module for opens and shorts. An electron beam lands on a pad of an interconnect network located on a substrate. The electron beam is used to interrogate the pad. An extract grid located above the substrate is maintained at a positive potential. While the electron beam interrogates the pad, the pad emits secondary electrons until such a point that the pad reaches a positive potential near that of the positive potential of the extract grid. The extract grid is then switched to a negative potential. The pad, still being interrogated by the electron beam, then collects secondary electrons until such a point that the pad reaches a negative potential near that of the negative potential of the extract grid. The test time, the length of time it takes for the pad to change from the positive potential to the negative potential, is measured and compared to a reference value. From this comparison it can be determined whether the interconnect network is defect-free, open, or shorted. If the test time is approximately equal to the reference value then the interconnect network is defect-free. If the test time is lower than the reference value then the interconnect network contains an open. If the test time is higher than the reference value then the interconnect network is shorted to another interconnect network or etc. Additionally, the above described invention can be accomplished by maintaining the extract grid at ground potential and switching the potential of a backplate.
    • 本发明描述了一种用于测试用于开放和短路的多芯片模块的互连网络的方法。 电子束落在位于衬底上的互连网络的焊盘上。 电子束用于询问焊盘。 位于基板上方的提取网格保持在正电位。 当电子束询问焊盘时,焊盘发射二次电子,直到焊盘达到接近提取栅极的正电位的正电位的点。 然后将提取网格切换到负电位。 仍然被电子束询问的焊盘然后收集二次电子,直到焊盘达到接近提取栅极的负电位的负电位。 测试时间,焊盘从正电位变为负电位所需的时间长度,并与参考值进行比较。 从这个比较可以确定互连网络是无缺陷的,开放的还是短路的。 如果测试时间大约等于参考值,则互连网络是无缺陷的。 如果测试时间低于参考值,则互连网络包含一个打开的。 如果测试时间高于参考值,则互连网络与另一个互连网络等短路。另外,可以通过将提取网格保持在地电位并切换背板的电位来实现上述发明。
    • 84. 发明授权
    • Methods and compositions for introduction of exogenous dsRNA into plant cells
    • 将外源dsRNA引入植物细胞的方法和组合物
    • US09433217B2
    • 2016-09-06
    • US13585947
    • 2012-08-15
    • Guo-Qing Tang
    • Guo-Qing Tang
    • A01N57/16C12N15/82
    • A01N57/16C12N15/8206C12N15/8218A01N43/22A01N2300/00
    • This invention provides a method to silence an endogenous target gene expression in plants by applying a specific dsRNA onto the exterior surface of a plant. Application, such as by spraying or brushing a plant with dsRNA is done without wounding the plant tissue and cells such as by mechanical-type wounding, particle bombardment or mechanical infection with viral vectors. The present invention enables the regulation of gene expression in plants. In some embodiments of the invention, the dsRNA is directed to an essential gene of a plant pathogen or pest, whereby the pathogen and/or pest damage is controlled, resulting in desired agronomic performance.
    • 本发明提供了一种通过将特异性dsRNA应用于植物的外表面来沉默植物内源性靶基因表达的方法。 例如通过用dsRNA喷雾或刷涂植物来进行施用,而不伤害植物组织和细胞,例如通过机械型伤口,颗粒轰击或病毒载体的机械感染。 本发明能够调节植物中的基因表达。 在本发明的一些实施方案中,dsRNA被引导到植物病原体或害虫的必需基因,由此控制病原体和/或害虫损伤,从而产生所需的农学性能。
    • 87. 发明授权
    • Method and structure for copper gap fill plating of interconnect structures for semiconductor integrated circuits
    • 用于半导体集成电路的互连结构的铜间隙填充电镀方法和结构
    • US08242017B2
    • 2012-08-14
    • US12044254
    • 2008-03-07
    • Yang Hui XiangQing Tang Jiang
    • Yang Hui XiangQing Tang Jiang
    • H01L21/4763
    • H01L21/76856H01L21/76873
    • A method for forming an integrated circuit device including an interconnect structure, e.g., copper dual damascene. The method includes providing a substrate and forming an interlayer dielectric layer overlying the substrate. The method also includes patterning the interlayer dielectric layer to form a contact structure and forming a barrier metal layer overlying the contact structure. The method includes forming a seed layer comprising copper bearing species overlying the barrier metal layer and applying an oxygen bearing species to treat the seed layer to cause an oxide layer of predetermined thickness to form on the seed layer. The method protects the seed layer from contamination using the oxide layer while the substrate is transferred from the step of applying the seed layer and contacts a copper bearing material in liquid form overlying the oxide layer to dissolve the oxide layer while forming a thickness of copper bearing material using a plating process to begin filling the contact structure.
    • 一种用于形成集成电路器件的方法,该集成电路器件包括互连结构,例如铜双镶嵌。 该方法包括提供衬底并形成覆盖衬底的层间电介质层。 该方法还包括图案化层间电介质层以形成接触结构并形成覆盖接触结构的阻挡金属层。 该方法包括形成包含覆盖在阻挡金属层上的含铜物种的种子层,并施加含氧物种来处理种子层以在种子层上形成预定厚度的氧化物层。 该方法使用氧化物层保护种子层免受污染,同时从施加种子层的步骤转移衬底,并以覆盖氧化物层的液态形式接触含铜材料以溶解氧化物层,同时形成铜轴承的厚度 使用电镀工艺开始填充接触结构的材料。