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71. 发明授权

US6140142A Semiconductor laser and a method for producing the same 失效
标题翻译：半导体激光器及其制造方法
公开(公告)号：US6140142A
公开(公告)日：2000-10-31
申请号：US350795
申请日：1999-07-09
申请人： Hiroaki Ikeda , Ken Ohbayashi
发明人： Hiroaki Ikeda , Ken Ohbayashi
IPC分类号： H01S5/00 , H01S5/20 , H01S5/22 , H01S5/223 , H01S5/323 , H01L21/20
CPC分类号： H01S5/2231 , H01S5/204 , H01S5/209 , H01S5/222 , H01S5/2227 , H01S5/32316
摘要： A semiconductor laser device according to the present invention includes: a semiconductor substrate having a first conductivity type; and a semiconductor multilayer structure provided on the semiconductor substrate, the semiconductor multilayer structure including an active layer. The semiconductor multilayer structure includes: a lower cladding layer provided below the active layer, the lower cladding layer having the first conductivity type; an upper cladding structure provided above the active layer, the upper cladding structure having a second conductivity type; and a cap layer provided above the upper cladding structure. A ridge is formed in the upper cladding structure, and a width of a lower face of the cap layer is larger than a width of an upper face of the ridge.
摘要翻译：根据本发明的半导体激光器件包括：具有第一导电类型的半导体衬底; 以及设置在所述半导体衬底上的半导体多层结构，所述半导体多层结构包括有源层。半导体多层结构包括：设置在有源层下面的下包层，下包层具有第一导电类型; 设置在所述有源层上方的上包层结构，所述上包层结构具有第二导电类型; 以及设置在上包层结构上方的盖层。在上包层结构中形成脊，并且帽层的下表面的宽度大于脊的上表面的宽度。

72. 发明授权

US5956361A Semiconductor laser and a method for producing the same 失效
标题翻译：半导体激光器及其制造方法
公开(公告)号：US5956361A
公开(公告)日：1999-09-21
申请号：US785242
申请日：1997-01-17
申请人： Hiroaki Ikeda , Ken Ohbayashi
发明人： Hiroaki Ikeda , Ken Ohbayashi
IPC分类号： H01S5/00 , H01S5/20 , H01S5/22 , H01S5/223 , H01S5/323 , H01S3/19
CPC分类号： H01S5/2231 , H01S5/204 , H01S5/209 , H01S5/222 , H01S5/2227 , H01S5/32316
摘要： A semiconductor laser device according to the present invention includes: a semiconductor substrate having a first conductivity type; and a semiconductor multilayer structure provided on the semiconductor substrate, the semiconductor multilayer structure including an active layer. The semiconductor multilayer structure includes: a lower cladding layer provided below the active layer, the lower cladding layer having the first conductivity type, an upper cladding structure provided above the active layer, the upper cladding structure having a second conductivity type; and a cap layer provided above the upper cladding structure. A ridge is formed in the upper cladding structure, and a width of a lower face of the cap layer is larger than a width of an upper face of the ridge.
摘要翻译：根据本发明的半导体激光器件包括：具有第一导电类型的半导体衬底; 以及设置在所述半导体衬底上的半导体多层结构，所述半导体多层结构包括有源层。半导体多层结构包括：设置在有源层下面的下包层，具有第一导电类型的下包层，设置在有源层上的上包层结构，上包层结构具有第二导电类型; 以及设置在上包层结构上方的盖层。在上包层结构中形成脊，并且帽层的下表面的宽度大于脊的上表面的宽度。

73. 发明授权

US5940423A Semiconductor laser, optical pickup device, and optical record and/or reproducing apparatus 失效
标题翻译：半导体激光器，光学拾取装置和光学记录和/或再现装置
公开(公告)号：US5940423A
公开(公告)日：1999-08-17
申请号：US873106
申请日：1997-06-11
申请人： Kenji Sahara
发明人： Kenji Sahara
IPC分类号： H01S5/00 , H01S5/20 , H01S5/223 , H01S5/323 , H01S3/19
CPC分类号： H01S5/2231 , H01S5/204 , H01S5/32316
摘要： A semiconductor laser comprises: a substrate, a first cladding layer on the substrate, an active layer on the first cladding layer, a second cladding layer on the active layer; and the second cladding layer has a plurality of steps of equivalent complex index of refraction disposed to be parallel to p-n junction direction and to be perpendicular to a cavity direction. In an optical pickup device using a semiconductor laser as a light source thereof, the semiconductor laser comprises: a substrate, a first cladding layer on the substrate, an active layer on the first cladding layer, a second cladding layer on the active layer; and the second cladding layer has a plurality of equivalent complex index of refraction disposed to be parallel to p-n junction direction and to be perpendicular to a cavity direction. In an optical record and/or reproducing apparatus using semiconductor laser as a light source thereof, the semiconductor laser comprises: a substrate, a first cladding layer on the substrate, an active layer on the first cladding layer, a second cladding layer on the active layer; and the second cladding layer has a plurality of steps of equivalent complex index of refraction disposed to be parallel to p-n junction direction and to be perpendicular to a cavity direction.
摘要翻译：半导体激光器包括：基板，基板上的第一包层，第一包层上的有源层，有源层上的第二包层; 并且所述第二包层具有多个等效复折射率的设置成平行于p-n结方向并垂直于空腔方向的步骤。在使用半导体激光器作为其光源的光拾取装置中，半导体激光器包括：基板，基板上的第一包层，第一包层上的有源层，有源层上的第二包层; 并且所述第二包层具有多个等效复折射率，其设置为平行于p-n结方向并且垂直于空腔方向。在使用半导体激光器作为其光源的光学记录和/或再现装置中，半导体激光器包括：基板，基板上的第一包层，第一包层上的有源层，活性层上的第二包层层; 并且所述第二包层具有多个等效复折射率的设置成平行于p-n结方向并垂直于空腔方向的步骤。

74. 发明授权

US5838854A Integrated optical control element and a method for fabricating the same and optical integrated circuit element and optical integrated circuit device using the same 失效
公开(公告)号：US5838854A
公开(公告)日：1998-11-17
申请号：US955161
申请日：1997-10-21
申请人： Mototaka Taneya , Fumihiro Konushi , Hidenori Kawanishi , Tatsuya Morioka , Atsushi Shimonaka
发明人： Mototaka Taneya , Fumihiro Konushi , Hidenori Kawanishi , Tatsuya Morioka , Atsushi Shimonaka
IPC分类号： G02B6/122 , G02B6/12 , G02B6/125 , G02B6/13 , G02B6/34 , G02B6/42 , G02F2/00 , H01L27/15 , H01S5/00 , H01S5/026 , H01S5/042 , H01S5/12 , H01S5/22 , H01S5/223 , H01S5/323 , H01S5/40 , H01S5/50 , G02B1/295 , G02B6/26
CPC分类号： G02B6/4246 , G02B6/12004 , G02B6/12007 , G02B6/125 , G02B6/42 , H01S5/026 , G02B2006/12104 , G02B6/29361 , H01S5/0262 , H01S5/12 , H01S5/22 , H01S5/223 , H01S5/32316 , H01S5/4031 , H01S5/4056 , H01S5/50
摘要： The integrated optical control element of this invention includes: a first waveguide for allowing light incident from outside to propagate therein; a multilayer structure for allowing the light which has propagated in the first waveguide to be incident thereon and for transmitting the light therethrough or reflecting the light therefrom, the multilayer structure including at least one layer having a refractive index different from an equivalent refractive index of a region with which the at least one layer is in contact; and a second waveguide for receiving at least part of the light transmitted through or reflected from the multilayer structure.

75. 发明授权

US5835516A Semiconductor laser device and method of fabricating semiconductor laser device 失效
标题翻译：半导体激光器件及半导体激光器件的制造方法
公开(公告)号：US5835516A
公开(公告)日：1998-11-10
申请号：US569881
申请日：1995-12-08
申请人： Motoharu Miyashita , Hirotaka Kizuki , Yasuaki Yoshida , Yutaka Mihashi , Yasutomo Kajikawa , Shoichi Karakida , Yuji Ohkura
发明人： Motoharu Miyashita , Hirotaka Kizuki , Yasuaki Yoshida , Yutaka Mihashi , Yasutomo Kajikawa , Shoichi Karakida , Yuji Ohkura
IPC分类号： H01L21/306 , H01S5/00 , H01S5/20 , H01S5/22 , H01S5/223 , H01S5/323 , H01S3/19 , H01L21/20
CPC分类号： H01S5/2231 , H01S5/2081 , H01S5/209 , H01S5/2206 , H01S5/221 , H01S5/32316
摘要： A method of fabricating a semiconductor laser device includes successively forming an active layer and upper cladding layers on a lower cladding layer, etching and removing portions except regions of the upper cladding layers where a current is to flow to form a stripe-shaped ridge structure, and forming a buffer layer comprising Al.sub.x Ga.sub.1-x As having an Al composition ratio x of 0 to 0.3 on a surface of the upper cladding layers exposed by the etching and forming a current blocking layer of first conductivity type Al.sub.y Ga.sub.1-y As having an Al composition ratio y of at least 0.5 on the buffer layer to bury portions of the upper cladding layers which are not removed by the etching process. Therefore, since the layer grown on the upper cladding layer exposed by etching of AlGaAs or GaAs having a low Al composition ratio (0-0.3), three-dimensional growth of and crystalline defects in the buffer layer are suppressed. Current leakage is suppressed, so that a semiconductor laser device having a low threshold current and a high efficiency is fabricated with a stable yield.
摘要翻译：一种制造半导体激光器件的方法包括：在下包层上连续形成有源层和上覆层，蚀刻除去电流流过的上覆层的区域以外的部分，形成条状脊结构，以及在通过蚀刻暴露的上覆层的表面上形成包含Al组成比x为0至0.3的Al x Ga 1-x As的缓冲层，并形成具有Al组成比y的第一导电型AlyGa1-yAs的电流阻挡层在缓冲层上至少为0.5以掩埋未被蚀刻工艺除去的上覆层的部分。因此，由于通过蚀刻Al AlAs或Al组成比低（0-0.3）的GaAs而暴露在上包层上的层，抑制了缓冲层的三维生长和晶体缺陷。电流泄漏被抑制，从而以稳定的产量制造具有低阈值电流和高效率的半导体激光器件。

76. 发明授权

US5776792A Method for forming semiconductor laser device 失效
标题翻译：半导体激光器件的形成方法
公开(公告)号：US5776792A
公开(公告)日：1998-07-07
申请号：US811439
申请日：1997-03-03
申请人： Hiroki Naito , Masahiro Kume
发明人： Hiroki Naito , Masahiro Kume
IPC分类号： H01S5/042 , H01S5/20 , H01S5/223 , H01S5/32 , H01S5/323 , H01S5/343 , H01L21/00
CPC分类号： B82Y20/00 , H01S5/20 , H01S5/2231 , H01S5/0422 , H01S5/204 , H01S5/3211 , H01S5/32316 , H01S5/32333 , H01S5/32341 , H01S5/3432 , H01S5/34333
摘要： On an n-type semiconductor substrate, a buffer layer and a cladding layer are formed. On the cladding layer, an active layer made of Ga.sub.1-X Al.sub.X As is formed. On the active layer, an n-type first optical guiding layer made of Ga.sub.1-Y1 Al.sub.Y1 As is formed, and on the first optical guiding layer, an n-type second optical guiding layer made of Ga.sub.1-Y2 Al.sub.Y2 As is formed in stripe. On the first optical guiding layer and the second optical guiding layer, an n-type cladding layer made of Ga.sub.1-Y3 Al.sub.Y3 As is formed. The interface resistance between the first optical guiding layer and the cladding layer is larger than both the interface resistance between the first optical guiding layer and the second optical guiding layer and the interface resistance between the second optical guiding layer and the cladding layer. Between X, Y1, Y2, and Y3 of each AlAs mole fraction of the active layer, first and second optical guiding layers, and cladding layer, the relationships of Y3>Y2 and Y1>X.gtoreq.0 are satisfied.
摘要翻译：在n型半导体衬底上形成缓冲层和覆层。在包覆层上形成由Ga1-XAlXAs构成的活性层。在有源层上形成由Ga1-Y1AlY1As构成的n型第一光导层，在第一导光层上形成由Ga1-Y2AlY2As构成的n型第二导光层。在第一光导层和第二光导层上形成由Ga1-Y3AlY3As构成的n型覆层。第一光导层和包层之间的界面电阻大于第一光导层和第二光导层之间的界面电阻以及第二光导层与包层之间的界面电阻。在有源层，第一和第二光导层和包层的每个AlAs摩尔分数的X，Y1，Y2和Y3之间，满足Y3> Y2和Y1> X> / = 0的关系。

77. 发明授权

US5360754A Method for the making heteroepitaxial thin layers and electronic devices 失效
标题翻译：制造异质外延薄层和电子器件的方法
公开(公告)号：US5360754A
公开(公告)日：1994-11-01
申请号：US41455
申请日：1993-04-02
申请人： Didier Pribat , Bruno Gerard
发明人： Didier Pribat , Bruno Gerard
IPC分类号： H01L21/02 , C30B25/18 , H01L21/20 , H01L21/203 , H01L21/205 , H01S5/02 , H01S5/32 , H01S5/323
CPC分类号： H01S5/3202 , C30B25/18 , H01L21/02381 , H01L21/02461 , H01L21/02463 , H01L21/02543 , H01L21/02546 , H01L21/02639 , H01L21/02645 , H01S5/021 , H01S5/0424 , H01S5/32308 , H01S5/32316 , H01S5/3428
摘要： The disclosure relates to the field of monocrystalline thin layers deposited on a substrate having an identical or a different nature, from a vapor phase. On the substrate made of monocrystalline material A, a cavity is built, determined by one face of the substrate and one face of a layer made of a material D in such a way that there can be neither nucleation nor growth on the faces exposed to the vapor phase. The growth is done from a seed made of monocrystalline material B located between two faces of the substrate and of the layer. The seed made of monocrystalline material B may be of a nature different from that of the substrate (for example, substrate=silicon and material B=GaAs) and is made, for example, by MBE or MOCVD. The material C to be made to grow is different from the material B of the seed. The material C is, for example, InP and the growth is done by VPE.
摘要翻译：本公开涉及沉积在具有与气相相同或不同性质的基底上的单晶薄层的领域。在由单晶材料A制成的衬底上，由衬底的一个表面和由材料D制成的层的一个面确定一个空腔，使得在暴露于该晶体材料的表面上不会有成核和生长汽相。生长由位于基底和该层的两个面之间的单晶材料B制成的种子进行。由单晶材料B制成的种子可以与衬底（例如，衬底=硅和材料B = GaAs）的性质不同，并且例如由MBE或MOCVD制成。要生长的材料C不同于种子的材料B. 材料C例如为InP，生长由VPE完成。

78. 发明授权

US5111470A Semiconductor laser device and a method of fabricating the same 失效
标题翻译：半导体激光器件及其制造方法
公开(公告)号：US5111470A
公开(公告)日：1992-05-05
申请号：US685415
申请日：1991-04-12
申请人： Hiroyuki Hosoba , Akinori Seki , Toshio Hata , Masafumi Kondou , Takahiro Suyama , Sadayoshi Matsui
发明人： Hiroyuki Hosoba , Akinori Seki , Toshio Hata , Masafumi Kondou , Takahiro Suyama , Sadayoshi Matsui
IPC分类号： H01S5/00 , H01S5/20 , H01S5/223 , H01S5/323
CPC分类号： H01S5/2231 , H01S5/209 , H01S5/32316
摘要： A semiconductor laser device is provided which includes a semiconductor substrate and a multi-layered structure disposed on the substrate, the multi-layered structure containing an Al.sub.x Ga.sub.1-x As (0 y) active layer for laser oscillation formed on the first cladding layer, an Al.sub.x Ga.sub.1-x As (0 y) active layer for laser oscillation, an AlGaAs (0

79. 发明授权

US5042045A Ridge-waveguide semiconductor laser 失效
标题翻译：脊波导半导体激光器
公开(公告)号：US5042045A
公开(公告)日：1991-08-20
申请号：US482922
申请日：1990-02-22
申请人： Fumihiko Sato
发明人： Fumihiko Sato
IPC分类号： H01S5/00 , H01S5/20 , H01S5/22 , H01S5/223 , H01S5/323
CPC分类号： H01S5/2231 , H01S5/209 , H01S5/2213 , H01S5/32316
摘要： A semiconductor laser includes a substrate (11) on which there are successively formed a first cladding layer (12), an active layer (13), a second cladding layer (14), an etching-stop layer (15) exhibiting little absorptivity with respect to light emitting by the active layer, and a third cladding layer (16). The third cladding layer is etched away down to the etching stop layer with the exception of a ridge portion of the third cladding layer.

80. 发明授权

US4821278A Inverted channel substrate planar semiconductor laser 失效
标题翻译：反向沟道衬底平面半导体激光器
公开(公告)号：US4821278A
公开(公告)日：1989-04-11
申请号：US33304
申请日：1987-04-02
申请人： Jane J. Yang , Chi-Shain Hong
发明人： Jane J. Yang , Chi-Shain Hong
IPC分类号： H01S5/00 , H01S5/223 , H01S5/323 , H01S3/19
CPC分类号： H01S5/2231 , H01S5/32316
摘要： A semiconductor laser structure having the same advantages as a channeled substrate planar laser, but without the difficulties of fabrication associated with this structure. The structure includes a substrate, a planar first cladding layer, a planar active layer, and a second cladding layer in which a mesa region is formed. A blocking layer is formed over the second cladding layer and electrical contact is made through the blocking layer in the region of the mesa. The blocking layer functions to confine current flow in the mesa region and to provide index-guiding of light in the mesa region. Because of its simple geometry, the structure can be conveniently formed using a desirable fabrication process, such as metalorganic chemical vapor deposition (MOCVD). In one disclosed embodiment of the invention, the mesa is broadened to include at least one intermediate ledge on each side of a central pedestal. This reduces the abruptness of the change in effective index of refraction encountered by the laser light, and reduces astigmatism in the resultant beam.

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