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1. 发明授权

US07160614B2 Crystalline superfine particles, complex material, method of manufacturing crystalline superfine particles, inverted micelles, inverted micelles enveloping precursor superfine particles, inverted micelles enveloping crystalline superfine particles, and precursor superfine particles 有权
公开(公告)号：US07160614B2
公开(公告)日：2007-01-09
申请号：US10694042
申请日：2003-10-28
申请人： Hiroki Naito , Yuichi Ishida , Masayuki Suzuki , Keiko Furukawa , Katsuyuki Hironaka
发明人： Hiroki Naito , Yuichi Ishida , Masayuki Suzuki , Keiko Furukawa , Katsuyuki Hironaka
IPC分类号： B32B5/16
CPC分类号： C09K11/7792 , B82Y30/00 , C09K11/025 , C09K11/7734 , D01F1/04 , Y10S977/811 , Y10S977/834 , Y10T428/2982 , Y10T428/2991 , Y10T428/2993 , Y10T428/2998
摘要： Crystalline superfine particles capable of emitting light depending upon a time-rate-of-change of a stress and controlled in grain size in the range from 5 nm to 100 nm are complexed with another material such as resin. The crystalline superfine particles are manufactured by using aggregates of molecules, i.e. inverted micelles, which orient hydrophilic groups of surfactant molecules inward and hydrophobic groups outward in a nonpolar solvent and which contain metal ions of a metal for forming the crystalline superfine particles dissolved in water inside the inverted micelles. Alternatively, they are manufactured by using inverted micelles enveloping precursor superfine particles, in which precursor superfine particles are enveloped in water inside the inverted micelles. The crystalline superfine particles are excellent in dispersibility in another material to be complexed, enhanced in emission efficiency and usable to make a transparent stress emission material. The complex material obtained is used to manufacture artificial light-emitting hair structures, artificial light-emitting skin, artificial light-emitting bodies, artificial light-emitting fabrics, and others.

2. 发明授权

US5587334A Semiconductor laser device fabrication method 失效
标题翻译：半导体激光器件制造方法
公开(公告)号：US5587334A
公开(公告)日：1996-12-24
申请号：US285357
申请日：1994-08-03
申请人： Hiroki Naito , Masahiro Kume , Hideyuki Sugiura , Toru Takayama , Kunio Itoh , Issei Ohta , Hirokazu Shimizu
发明人： Hiroki Naito , Masahiro Kume , Hideyuki Sugiura , Toru Takayama , Kunio Itoh , Issei Ohta , Hirokazu Shimizu
IPC分类号： H01S5/20 , H01S5/22 , H01S5/223 , H01S5/32 , H01S5/323 , H01S5/343 , H01L21/20
CPC分类号： B82Y20/00 , H01S5/2231 , H01S5/2004 , H01S5/2013 , H01S5/221 , H01S5/3211 , H01S5/32308 , H01S5/3432
摘要： A semiconductor laser device of low operating current and low noise for the 780 nm band to be used as the light source for an optical disc and its fabrication method. The device comprises: a certain conduction type Ga.sub.1-Y1 Al.sub.Y1 As first light guide layer, a Ga.sub.1-Y2 Al.sub.Y2 As second light guide layer of said certain conduction type, or an In.sub.0.5 Ga.sub.0.5 P or an In.sub.0.5 (GaAl).sub.0.5 P or an InGaAsP second light guide layer, successively formed one upon another at least in one side of the principal plane of an active layer; an opposite conduction type Ga.sub.1-Z Al.sub.Z As current blocking layer formed on the second light guide layer and provided with a stripe-like window; and a Ga.sub.1-Y3 Al.sub.Y3 As cladding layer of the same conduction type a said light guide layers formed on said stripe-like window, wherein relations of Z>Y3>Y2 and Y1>Y2 are established among Y1, Y2 Y3 and Z that define the AlAs mole-fractions.
摘要翻译：用作780nm波段的低工作电流和低噪声的半导体激光器件用作光盘的光源及其制造方法。该装置包括：一定导电型Ga1-Y1AlY1As第一导光层，具有所述一定导电类型的Ga1-Y2AlY2As第二导光层，或In0.5Ga0.5P或In0.5（GaAl）0.5P或InGaAsP 第二导光层，在有源层的主平面的至少一个侧面依次形成; 形成在第二导光层上并具有条状窗的相反导电型Ga1-ZAlZAs电流阻挡层; 以及形成在所述条状窗口上的所述导光层具有相同导电类型的Ga1-Y3AlY3As覆层，其中在Y1，Y2 Y3和Z之间建立Z> Y3> Y2和Y1> Y2的关系，其定义AlAs 摩尔分数。

3. 发明授权

US08168986B2 GaN-based semiconductor light-emitting element, light-emitting element assembly, light-emitting apparatus, method of driving GaN-based semiconductor light-emitting element, and image display apparatus 有权
标题翻译： GaN系半导体发光元件，发光元件组件，发光装置，GaN系半导体发光元件的驱动方法以及图像显示装置
公开(公告)号：US08168986B2
公开(公告)日：2012-05-01
申请号：US12408106
申请日：2009-03-20
申请人： Ippei Nishinaka , Goshi Biwa , Hiroki Naito
发明人： Ippei Nishinaka , Goshi Biwa , Hiroki Naito
IPC分类号： H01L33/00
CPC分类号： H01L33/06 , G02F1/133603 , H01L33/02 , H01L33/32 , H01L2924/0002 , H01L2924/00
摘要： A GaN-based semiconductor light-emitting element is provided and includes a first GaN-based compound semiconductor layer; an active layer having a multi-quantum well structure; and a second GaN-based compound semiconductor layer. At least one of barrier layers constituting the active layer is composed of a varying-composition barrier layer, and the composition of the varying-composition barrier layer varies in the thickness direction thereof so that the band-gap energy in a region of the varying-composition barrier layer, the region being adjacent to a boundary between a well layer disposed closer to the second GaN-based compound semiconductor layer and the varying-composition barrier layer, is lower than that in a region of the varying-composition barrier layer, the region being adjacent to a boundary between a well layer disposed closer to the first GaN-based compound semiconductor layer and the varying-composition barrier layer.
摘要翻译：提供GaN基半导体发光元件，并且包括第一GaN基化合物半导体层; 具有多量子阱结构的有源层; 和第二GaN基化合物半导体层。构成有源层的阻挡层中的至少一个由变化的组成阻挡层构成，并且变化组成阻挡层的组成在其厚度方向上变化，使得变化组成阻挡层的区域中的带隙能量，组成阻挡层，与设置在更靠近第二GaN基化合物半导体层的阱层和变化组成阻挡层之间的边界相邻的区域低于在变化组成阻挡层的区域中的边界，区域与设置在更靠近第一GaN基化合物半导体层的阱层和变化组成阻挡层之间的边界相邻。

4. 发明授权

US07928452B2 GaN-based semiconductor light-emitting element, light-emitting element assembly, light-emitting apparatus, method of manufacturing GaN-based semiconductor light-emitting element, method of driving GaN-based semiconductor light-emitting element, and image display apparatus 有权
标题翻译： GaN系半导体发光元件，发光元件组件，发光装置，GaN系半导体发光元件的制造方法，GaN系半导体发光元件的驱动方法以及图像显示装置
公开(公告)号：US07928452B2
公开(公告)日：2011-04-19
申请号：US12402160
申请日：2009-03-11
申请人： Hiroki Naito , Hiroyuki Okuyama , Goshi Biwa , Ippei Nishinaka
发明人： Hiroki Naito , Hiroyuki Okuyama , Goshi Biwa , Ippei Nishinaka
IPC分类号： H01L33/00
CPC分类号： H01L33/025 , H01L33/04 , H01L33/32 , H01L2924/0002 , H01L2924/00
摘要： A GaN-based semiconductor light-emitting element includes a first GaN-based compound semiconductor layer of n-conductivity type, an active layer, a second GaN-based compound semiconductor layer of p-conductivity type, a first electrode electrically connected to the first GaN-based compound semiconductor layer, a second electrode electrically connected to the second GaN-based compound semiconductor layer, an impurity diffusion-preventing layer composed of an undoped GaN-based compound semiconductor, the impurity diffusion-preventing layer preventing a p-type impurity from diffusing into the active layer, and a laminated structure or a third GaN-based compound semiconductor layer of p-conductivity type. The impurity diffusion-preventing layer and the laminated structure or the third GaN-based compound semiconductor layer of p-conductivity type are disposed, between the active layer and the second GaN-based compound semiconductor layer, in that order from the active layer side.
摘要翻译： GaN基半导体发光元件包括n导电型的第一GaN基化合物半导体层，有源层，p导电型的第二GaN基化合物半导体层，与第一GaN导电型电连接的第一电极 GaN基化合物半导体层，与第二GaN基化合物半导体层电连接的第二电极，由未掺杂的GaN基化合物半导体构成的杂质扩散防止层，防止p型杂质的杂质扩散防止层从扩散到有源层，以及p型导电型的层叠结构或第三GaN基化合物半导体层。在有源层和第二GaN基化合物半导体层之间，依次从有源层侧配置p型导电型杂质扩散防止层和层叠结构或第三GaN类化合物半导体层。

5. 发明申请

US20110062457A1 SEMICONDUCTOR LIGHT EMITTING DEVICE, METHOD OF MANUFACTURING THE SAME, IMAGE DISPLAY DEVICE, AND ELECTRONIC APPARATUS 审中-公开
标题翻译：半导体发光装置，其制造方法，图像显示装置和电子装置
公开(公告)号：US20110062457A1
公开(公告)日：2011-03-17
申请号：US12877534
申请日：2010-09-08
申请人： Hiroki Naito , Takahiro Koyama , Kensuke Kojima , Arata Kobayashi , Hiroyuki Okuyama , Makoto Oogane , Takayuki Kawasumi
发明人： Hiroki Naito , Takahiro Koyama , Kensuke Kojima , Arata Kobayashi , Hiroyuki Okuyama , Makoto Oogane , Takayuki Kawasumi
IPC分类号： H01L33/08 , H01L33/30 , H01L21/04
CPC分类号： H01L33/30 , H01L27/156 , H01L33/0062 , H01L33/20 , H01L33/38 , H01L33/62 , H01L2924/0002 , H01L2933/0016 , H01L2924/00
摘要： A semiconductor light emitting device including an active layer, a compound semiconductor layer on the active layer, a contact layer on the compound semiconductor layer, and an electrode on the contact layer, where the contact layer is substantially the same size as the electrode.
摘要翻译：一种半导体发光器件，包括有源层，有源层上的化合物半导体层，化合物半导体层上的接触层以及接触层上的电极，其中接触层与电极大致相同。

6. 发明申请

US20090230878A1 GaN-BASED SEMICONDUCTOR LIGHT-EMITTING ELEMENT, LIGHT-EMITTING ELEMENT ASSEMBLY, LIGHT-EMITTING APPARATUS, METHOD OF MANUFACTURING GaN-BASED SEMICONDUCTOR LIGHT-EMITTING ELEMENT, METHOD OF DRIVING GaN-BASED SEMICONDUCTOR LIGHT-EMITTING ELEMENT, AND IMAGE DISPLAY APPARATUS 有权
标题翻译：基于GaN的半导体发光元件，发光元件组件，发光装置，制造GaN基半导体发光元件的方法，驱动GaN基半导体发光元件的方法和图像显示装置
公开(公告)号：US20090230878A1
公开(公告)日：2009-09-17
申请号：US12402160
申请日：2009-03-11
申请人： Hiroki Naito , Hiroyuki Okuyama , Goshi Biwa , Ippei Nishinaka
发明人： Hiroki Naito , Hiroyuki Okuyama , Goshi Biwa , Ippei Nishinaka
IPC分类号： H05B41/36 , H01L33/00 , H01L21/28
CPC分类号： H01L33/025 , H01L33/04 , H01L33/32 , H01L2924/0002 , H01L2924/00
摘要： A GaN-based semiconductor light-emitting element includes a first GaN-based compound semiconductor layer of n-conductivity type, an active layer, a second GaN-based compound semiconductor layer of p-conductivity type, a first electrode electrically connected to the first GaN-based compound semiconductor layer, a second electrode electrically connected to the second GaN-based compound semiconductor layer, an impurity diffusion-preventing layer composed of an undoped GaN-based compound semiconductor, the impurity diffusion-preventing layer preventing a p-type impurity from diffusing into the active layer, and a laminated structure or a third GaN-based compound semiconductor layer of p-conductivity type. The impurity diffusion-preventing layer and the laminated structure or the third GaN-based compound semiconductor layer of p-conductivity type are disposed, between the active layer and the second GaN-based compound semiconductor layer, in that order from the active layer side.
摘要翻译： GaN基半导体发光元件包括n导电型的第一GaN基化合物半导体层，有源层，p导电型的第二GaN基化合物半导体层，与第一GaN导电型电连接的第一电极 GaN基化合物半导体层，与第二GaN基化合物半导体层电连接的第二电极，由未掺杂的GaN基化合物半导体构成的杂质扩散防止层，防止p型杂质的杂质扩散防止层从扩散到有源层，以及p型导电型的层叠结构或第三GaN基化合物半导体层。在有源层和第二GaN基化合物半导体层之间，依次从有源层侧配置p型导电型杂质扩散防止层和层叠结构或第三GaN类化合物半导体层。

7. 发明申请

US20080240993A1 IMMUNOCHROMATOGRAPHY TEST TOOL 审中-公开
标题翻译：免疫色谱测试工具
公开(公告)号：US20080240993A1
公开(公告)日：2008-10-02
申请号：US12054741
申请日：2008-03-25
申请人： Hiroki NAITO , Kinya NIHEI , Hijiri MASUDA , Atsushi TACHINO , Yoko ISHIHARA
发明人： Hiroki NAITO , Kinya NIHEI , Hijiri MASUDA , Atsushi TACHINO , Yoko ISHIHARA
IPC分类号： G01N30/02
CPC分类号： G01N33/558
摘要： An objective of the present invention is to provide an immunochromatography test tool having high detection sensitivity without leakage of a test solution to a space formed between an edge of a test piece and edge of a lower cover, in an immunochromatography test tool utilizing an antigen-antibody reaction. The immunochromatography test tool includes an upper cover having a test solution dropping window and a test result detection window, a lower cover having a test piece setting guide, and a test piece housed between the upper cover and the lower cover. In the test tool, contact angles of inner surfaces of the upper and lower covers are 60° to 150° with respect to water. The inner surfaces of the upper and lower covers are preferably subjected to a water repellent treatment.
摘要翻译：本发明的目的是提供一种免疫层析测试工具，其具有高检测灵敏度，而不会在测试溶液的边缘与下盖的边缘之间形成的空间中泄漏，抗体反应。免疫色谱测试工具包括具有测试溶液滴下窗和测试结果检测窗的上盖，具有测试片设置引导件的下盖和容纳在上盖和下盖之间的测试片。在测试工具中，上盖和下盖的内表面的接触角相对于水为60°至150°。上，下盖的内表面优选进行防水处理。

8. 发明申请

US20060257661A1 Crystalline superfine particles, complex material, method of manufacturing crystalline superfine particles, inverted micelles, inverted micelles enveloping precursor superfine particles, inverted micelles enveloping crystalline superfine particles, and precursor superfine particles 失效
标题翻译：结晶超细颗粒，复合材料，制造结晶超细颗粒的方法，倒置胶束，倒置胶束包封前体超微粒，反胶束包封结晶超细颗粒和前体超细颗粒
公开(公告)号：US20060257661A1
公开(公告)日：2006-11-16
申请号：US11490069
申请日：2006-07-21
申请人： Hiroki Naito , Yuichi Ishida , Masayuki Suzuki , Keiko Furukawa , Katsuyuki Hironaka
发明人： Hiroki Naito , Yuichi Ishida , Masayuki Suzuki , Keiko Furukawa , Katsuyuki Hironaka
IPC分类号： B32B1/00
CPC分类号： C09K11/7792 , B82Y30/00 , C09K11/025 , C09K11/7734 , D01F1/04 , Y10S977/811 , Y10S977/834 , Y10T428/2982 , Y10T428/2991 , Y10T428/2993 , Y10T428/2998
摘要： Crystalline superfine particles capable of emitting light depending upon a time-rate-of-change of a stress and controlled in grain size in the range from 5 nm to 100 nm are complexed with another material such as resin. The crystalline superfine particles are manufactured by using aggregates of molecules, i.e. inverted micelles, which orient hydrophilic groups of surfactant molecules inward and hydrophobic groups outward in a nonpolar solvent and which contain metal ions of a metal for forming the crystalline superfine particles dissolved in water inside the inverted micelles. Alternatively, they are manufactured by using inverted micelles enveloping precursor superfine particles, in which precursor superfine particles are enveloped in water inside the inverted micelles. The crystalline superfine particles are excellent in dispersibility in another material to be complexed, enhanced in emission efficiency and usable to make a transparent stress emission material. The complex material obtained is used to manufacture artificial light-emitting hair structures, artificial light-emitting skin, artificial light-emitting bodies, artificial light-emitting fabrics, and others.
摘要翻译：能够根据应力的变化时间变化发光并在5nm〜100nm的范围内控制晶粒尺寸的结晶超微粒与另一种材料如树脂复合。结晶超细颗粒通过使用分子的聚集体即反胶束来制造，所述分子将表面活性剂分子的亲水基团向内取向，并且疏水基团在非极性溶剂中向外定向并且含有金属的金属离子，以形成溶解在水中的结晶超细颗粒反胶束。或者，它们通过使用反胶束包封前体超细颗粒来制造，其中前体超细颗粒被包封在反胶束内的水中。结晶超细颗粒在另一种复合材料中的分散性优异，发光效率提高，可用于制造透明应力发射材料。所得的复合材料用于制造人造发光毛发结构，人造发光皮，人造发光体，人造发光织物等。

9. 发明申请

US20130034195A1 INTERFERENCE SUPPRESSION METHOD AND INTERFERENCE SUPPRESSION DEVICE 审中-公开
公开(公告)号：US20130034195A1
公开(公告)日：2013-02-07
申请号：US13649575
申请日：2012-10-11
申请人： Panasonic Corporation , Hiroki Naito
发明人： Hiroshi TAKAHASHI , Chalermphol APICHAICHALERMWONGSE , Kenji MIYANAGA , Yoshio URABE , Kazuhiro ANDO , Hiroshi HAYASHINO
IPC分类号： H04B1/10
CPC分类号： H04B1/123 , H04B1/7103 , H04J11/0036 , H04L25/0328
摘要： A reception station 1b compares its BSSID with BSSID included in a signal that has arrived thereat. As BSSIDs included in signals transmitted by interfering stations 1c and 1d both match BSSID of the reception station 1b, the reception station 1b identifies each of the interfering stations 1c and 1d as a non-suppression target transmission source. As neither of BSSIDs included in signals transmitted by interfering stations 2a and 2b matches BSSID of the reception station 1b, the reception station 1b identifies each of the interfering stations 2a and 2b as a suppression target transmission source. The reception station 1b uses characteristic amounts of signals that are associated with the interfering stations (i.e., suppression target transmission sources) 2a and 2b and that have been measured in the past as characteristic amounts of interfering signals that are used to suppress the interfering signals from a received signal.

10. 发明申请

US20070042181A1 Crystalline superfine particles, complex material, method of manufacturing crystalline superfine particles, inverted micelles, inverted micelles enveloping precursor superfine particles, inverted micelles enveloping crystalline superfine particles, and precursor superfine particles 审中-公开
公开(公告)号：US20070042181A1
公开(公告)日：2007-02-22
申请号：US11588383
申请日：2006-10-27
申请人： Hiroki Naito , Yuichi Ishida , Masayuki Suzuki , Keiko Furukawa , Katsuyuki Hironaka
发明人： Hiroki Naito , Yuichi Ishida , Masayuki Suzuki , Keiko Furukawa , Katsuyuki Hironaka
IPC分类号： B32B1/00
CPC分类号： C09K11/7792 , B82Y30/00 , C09K11/025 , C09K11/7734 , D01F1/04 , Y10S977/811 , Y10S977/834 , Y10T428/2982 , Y10T428/2991 , Y10T428/2993 , Y10T428/2998
摘要： Crystalline superfine particles capable of emitting light depending upon a time-rate-of-change of a stress and controlled in grain size in the range from 5 nm to 100 nm are complexed with another material such as resin. The crystalline superfine particles are manufactured by using aggregates of molecules, i.e. inverted micelles, which orient hydrophilic groups of surfactant molecules inward and hydrophobic groups outward in a nonpolar solvent and which contain metal ions of a metal for forming the crystalline superfine particles dissolved in water inside the inverted micelles. Alternatively, they are manufactured by using inverted micelles enveloping precursor superfine particles, in which precursor superfine particles are enveloped in water inside the inverted micelles. The crystalline superfine particles are excellent in dispersibility in another material to be complexed, enhanced in emission efficiency and usable to make a transparent stress emission material. The complex material obtained is used to manufacture artificial light-emitting hair structures, artificial light-emitting skin, artificial light-emitting bodies, artificial light-emitting fabrics, and others.

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