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    • 3. 发明授权
    • Method for forming semiconductor laser device
    • 半导体激光器件的形成方法
    • US5776792A
    • 1998-07-07
    • US811439
    • 1997-03-03
    • Hiroki NaitoMasahiro Kume
    • Hiroki NaitoMasahiro Kume
    • H01S5/042H01S5/20H01S5/223H01S5/32H01S5/323H01S5/343H01L21/00
    • B82Y20/00H01S5/20H01S5/2231H01S5/0422H01S5/204H01S5/3211H01S5/32316H01S5/32333H01S5/32341H01S5/3432H01S5/34333
    • On an n-type semiconductor substrate, a buffer layer and a cladding layer are formed. On the cladding layer, an active layer made of Ga.sub.1-X Al.sub.X As is formed. On the active layer, an n-type first optical guiding layer made of Ga.sub.1-Y1 Al.sub.Y1 As is formed, and on the first optical guiding layer, an n-type second optical guiding layer made of Ga.sub.1-Y2 Al.sub.Y2 As is formed in stripe. On the first optical guiding layer and the second optical guiding layer, an n-type cladding layer made of Ga.sub.1-Y3 Al.sub.Y3 As is formed. The interface resistance between the first optical guiding layer and the cladding layer is larger than both the interface resistance between the first optical guiding layer and the second optical guiding layer and the interface resistance between the second optical guiding layer and the cladding layer. Between X, Y1, Y2, and Y3 of each AlAs mole fraction of the active layer, first and second optical guiding layers, and cladding layer, the relationships of Y3>Y2 and Y1>X.gtoreq.0 are satisfied.
    • 在n型半导体衬底上形成缓冲层和覆层。 在包覆层上形成由Ga1-XAlXAs构成的活性层。 在有源层上形成由Ga1-Y1AlY1As构成的n型第一光导层,在第一导光层上形成由Ga1-Y2AlY2As构成的n型第二导光层。 在第一光导层和第二光导层上形成由Ga1-Y3AlY3As构成的n型覆层。 第一光导层和包层之间的界面电阻大于第一光导层和第二光导层之间的界面电阻以及第二光导层与包层之间的界面电阻。 在有源层,第一和第二光导层和包层的每个AlAs摩尔分数的X,Y1,Y2和Y3之间,满足Y3> Y2和Y1> X> / = 0的关系。
    • 4. 发明授权
    • Semiconductor laser device
    • 半导体激光器件
    • US5646953A
    • 1997-07-08
    • US417396
    • 1995-04-05
    • Hiroki NaitoMasahiro Kume
    • Hiroki NaitoMasahiro Kume
    • H01S5/042H01S5/20H01S5/223H01S5/32H01S5/323H01S5/343H01S3/19
    • B82Y20/00H01S5/20H01S5/2231H01S5/0422H01S5/204H01S5/3211H01S5/32316H01S5/32333H01S5/32341H01S5/3432H01S5/34333
    • On an n-type semiconductor substrate, a buffer layer and a cladding layer are formed. On the cladding layer, an active layer made of Ga.sub.1-X Al.sub.X As is formed. On the active layer, an n-type first optical guiding layer made of Ga.sub.1-Y1 Al.sub.Y1 As is formed, and on the first optical guiding layer, an n-type second optical guiding layer made of Ga.sub.1-Y2 Al.sub.Y2 As is formed in stripe. On the first optical guiding layer and the second optical guiding layer, an n-type cladding layer made of Ga.sub.1-Y3 Al.sub.Y3 As is formed. The interface resistance between the first optical guiding layer and the cladding layer is larger than both the interface resistance between the first optical guiding layer and the second optical guiding layer and the interface resistance between the second optical guiding layer and the cladding layer. Between X, Y1, Y2, and Y3 of each AlAs mole fraction of the active layer, first and second optical guiding layers, and cladding layer, the relationships of Y3>Y2 and Y1>X.gtoreq.0 are satisfied.
    • 在n型半导体衬底上形成缓冲层和覆层。 在包覆层上形成由Ga1-XAlXAs构成的活性层。 在有源层上形成由Ga1-Y1AlY1As构成的n型第一导光层,在第一导光层上形成由Ga1-Y2AlY2As构成的n型第二导光层。 在第一光导层和第二光导层上形成由Ga1-Y3AlY3As构成的n型覆层。 第一光导层和包层之间的界面电阻大于第一光导层和第二光导层之间的界面电阻以及第二光导层与包层之间的界面电阻。 在有源层,第一和第二光导层和包层的每个AlAs摩尔分数的X,Y1,Y2和Y3之间,满足Y3> Y2和Y1> X> / = 0的关系。
    • 10. 发明授权
    • Dental alginate impression material composition
    • 海藻酸印纹材料组成
    • US06559200B1
    • 2003-05-06
    • US10164632
    • 2002-06-10
    • Hiroshi KamoharaNobutaka WatanabeMakiko TakeoHiroki Naito
    • Hiroshi KamoharaNobutaka WatanabeMakiko TakeoHiroki Naito
    • A61K610
    • A61K6/10
    • To provide a dental alginate impression material composition without the defects of the conventional alginate impression material compositions using a pH indicator, that the confirmation of the completion of the gelation is inaccurate and difficult, and that they are poor in the affinity with water to be used during the mixing, the dental alginate impression material composition containing an alginate, a gelling reaction material, a gelling adjustment material, and a filler as major components further contains 0.001 to 0.1% by weight of one or more pH indicators selected from Cresol Red, &agr;-naphtholphthalein, Tropaeolin OOO, Thymol Blue, and phenolphthalein; 0.1 to 10% by weight of a water-soluble polyether that is a liquid at 25 ° C.; and 0.001 to 5% by weight of an inorganic pigment and/or an organic pigment having a color distinctly different from a color tone caused by color formation of the pH indicator during the gelation upon mixing with water.
    • 为了提供使用pH指示剂而不存在常规藻酸盐印模材料组合物缺陷的藻酸盐印模材料组合物,凝胶化完成的确认是不精确和困难的,并且它们与使用的水的亲和性差 在混合期间,含有藻酸盐,凝胶化反应材料,胶凝调节材料和作为主要成分的填料的海藻酸海藻酸印迹材料组合物还含有0.001至0.1重量%的一种或多种选自甲酚红,α - 萘酚,Tropaeolin OOO,百里酚蓝和酚酞; 0.1至10重量%的在25℃下为液体的水溶性聚醚; 和0.001-5重量%的无机颜料和/或与在与水混合时凝胶化期间由pH指示剂的着色形成明显不同的色调的有机颜料。