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1. 发明授权

US5111470A Semiconductor laser device and a method of fabricating the same 失效
标题翻译：半导体激光器件及其制造方法
公开(公告)号：US5111470A
公开(公告)日：1992-05-05
申请号：US685415
申请日：1991-04-12
申请人： Hiroyuki Hosoba , Akinori Seki , Toshio Hata , Masafumi Kondou , Takahiro Suyama , Sadayoshi Matsui
发明人： Hiroyuki Hosoba , Akinori Seki , Toshio Hata , Masafumi Kondou , Takahiro Suyama , Sadayoshi Matsui
IPC分类号： H01S5/00 , H01S5/20 , H01S5/223 , H01S5/323
CPC分类号： H01S5/2231 , H01S5/209 , H01S5/32316
摘要： A semiconductor laser device is provided which includes a semiconductor substrate and a multi-layered structure disposed on the substrate, the multi-layered structure containing an Al.sub.x Ga.sub.1-x As (0 y) active layer for laser oscillation formed on the first cladding layer, an Al.sub.x Ga.sub.1-x As (0 y) active layer for laser oscillation, an AlGaAs (0

2. 发明授权

US5491106A Method for growing a compound semiconductor and a method for producing a semiconductor laser 失效
标题翻译：生长化合物半导体的方法和半导体激光器的制造方法
公开(公告)号：US5491106A
公开(公告)日：1996-02-13
申请号：US97316
申请日：1993-07-23
申请人： Akinori Seki , Hiroyuki Hosoba , Toshio Hata , Masafumi Kondo , Takahiro Suyama , Sadayoshi Matsui
发明人： Akinori Seki , Hiroyuki Hosoba , Toshio Hata , Masafumi Kondo , Takahiro Suyama , Sadayoshi Matsui
IPC分类号： H01L21/20 , H01L21/203 , H01S5/00 , H01S5/223 , H01S5/323 , H01L21/302
CPC分类号： H01S5/32308 , H01L21/02395 , H01L21/02463 , H01L21/02546 , H01L21/02631 , H01L21/02658 , H01S5/2231 , H01S5/32316
摘要： A method for growing a compound semiconductor layer of Al.sub.x Ga.sub.1-x As (0.ltoreq.x.ltoreq.1) on a compound semiconductor substrate uses a molecular beam epitaxial apparatus, the method including the steps of providing the substrate having a GaAs layer on an upper surface thereof, thermally etching the GaAs layer by heating the substrate at a temperature and irradiating the GaAs layer with a gallium molecular beam and an arsenic molecular beam to expose the upper surface of the substrate, and growing the Al.sub.x Ga.sub.1-x As (0.ltoreq.x.ltoreq.1) layer on the upper surface of the substrate.
摘要翻译：在化合物半导体衬底上生长Al x Ga 1-x As（0≤x≤1）的化合物半导体层的方法使用分子束外延装置，该方法包括以下步骤：将具有GaAs层的衬底通过在温度下加热衬底并用镓分子束和砷分子束照射GaAs层来暴露衬底的上表面，并且生长Al x Ga 1-x As（0 < = x <1）层。

3. 发明授权

US5271028A Semiconductor laser device 失效
公开(公告)号：US5271028A
公开(公告)日：1993-12-14
申请号：US918462
申请日：1992-07-22
申请人： Masafumi Kondo , Takahiro Suyama , Shinji Kaneiwa , Toshio Hata , Hiroyuki Hosoba , Sadayoshi Matsui
发明人： Masafumi Kondo , Takahiro Suyama , Shinji Kaneiwa , Toshio Hata , Hiroyuki Hosoba , Sadayoshi Matsui
IPC分类号： H01L21/203 , H01S5/00 , H01S5/223 , H01S5/30 , H01S5/323 , H01S5/343 , H01S3/19
CPC分类号： B82Y20/00 , H01S5/2232 , H01S5/305 , H01S5/2231 , H01S5/2237 , H01S5/3081 , H01S5/32308 , H01S5/3432
摘要： A semiconductor laser device which can effectively confine electrons and positive holes is disclosed. The semiconductor laser device includes a semiconductor substrate of a first conductivity type, a current blocking layer of a second conductivity type, a first semiconductor layer of the first conductivity type made of a III-V group compound semiconductor, an active layer made of a III-V group compound semiconductor, and a second semiconductor layer. The semiconductor substrate has a ridge-type mesa having (n11)A planes. The current blocking layer is formed on the semiconductor substrate other than the top face of the mesa. The first semiconductor layer is formed on the entire surface of the current blocking layer and on the top face of the mesa. The active layer is formed on the first semiconductor layer. The second semiconductor layer is formed on the active layer. The second semiconductor layer has inclined portions, and is made of a III-V group compound semiconductor containing an amphoteric element as an impurity so that the inclined portions are of the first conductivity type and the other portions are of the second conductivity type.

4. 发明申请

US20140340890A1 LIGHT EMITTING APPARATUS AND METHOD FOR MANUFACTURING SAME 审中-公开
标题翻译：发光装置及其制造方法
公开(公告)号：US20140340890A1
公开(公告)日：2014-11-20
申请号：US14344379
申请日：2012-08-09
申请人： Toshio Hata , Shinji Osaki , Toyonori Uemura , Shinya Ishizaki , Makoto Matsuda
发明人： Toshio Hata , Shinji Osaki , Toyonori Uemura , Shinya Ishizaki , Makoto Matsuda
IPC分类号： H01L33/50 , H01L25/075 , H01L25/00 , F21K99/00 , F21V29/00
CPC分类号： H01L33/50 , A01G7/045 , F21K9/60 , F21V29/74 , F21Y2115/10 , H01L25/0753 , H01L25/50 , H01L2224/48091 , H01L2924/3025 , Y02P60/149 , H01L2924/00014 , H01L2924/00
摘要： A light emitting apparatus of the present invention is configured such that first and second light emitting sections are provided on a substrate (101) so as to be adjacent to each other, the first light emitting section being made up of (i) at least one blue LED chip (102) and (ii) a resin layer which covers the at least one blue LED chip (102) and in which a red phosphor is dispersed that emits red light upon receipt of excitation light from the at least one blue LED chip (102), the second light emitting section being made up of at least one LED chip (102). This makes it possible to easily adjust, with a simple and compact configuration, a ratio between a quantity of blue light and a quantity of red light.
摘要翻译：本发明的发光装置被配置为使得第一和第二发光部分设置在彼此相邻的基板（101）上，第一发光部分由（i）至少一个蓝色LED芯片（102）和（ii）覆盖所述至少一个蓝色LED芯片（102）的树脂层，并且其中分散有红色荧光体的红色荧光体在从所述至少一个蓝色LED芯片接收到激发光时发出红光（102），所述第二发光部分由至少一个LED芯片（102）构成。这使得可以通过简单且紧凑的配置容易地调整蓝光量与红光量之间的比率。

5. 发明申请

US20140339594A1 LIGHT EMITTING DEVICE AND METHOD FOR MANUFACTURING THE SAME 审中-公开
标题翻译：发光装置及其制造方法
公开(公告)号：US20140339594A1
公开(公告)日：2014-11-20
申请号：US14245974
申请日：2014-04-04
申请人： Masahiro Konishi , Makoto Agatani , Toshio Hata
发明人： Masahiro Konishi , Makoto Agatani , Toshio Hata
IPC分类号： H01L33/62 , H01L33/36
CPC分类号： H01L33/502 , F21K9/00 , F21K9/20 , F21K9/232 , F21V23/002 , F21Y2101/00 , F21Y2105/10 , F21Y2115/10 , H01L24/45 , H01L25/0753 , H01L33/32 , H01L33/36 , H01L33/38 , H01L33/56 , H01L33/60 , H01L33/62 , H01L33/641 , H01L2224/45124 , H01L2224/45144 , H01L2224/45147 , H01L2224/45169 , H01L2224/48091 , H01L2224/48465 , H01L2224/73265 , H01L2924/01015 , H01L2924/01047 , H01L2924/01068 , H01L2924/01087 , H01L2924/09701 , H01L2924/12041 , H01L2924/181 , H01L2924/3011 , H01L2924/3025 , H01L2924/00014 , H01L2924/00 , H01L2924/00012
摘要： By using a light emitting device including an insulating substrate and a light emitting unit formed on the insulating substrate, the light emitting unit including: a plurality of linear wiring patterns disposed on the insulating substrate in parallel with one another, a plurality of light emitting elements that are mounted between the wiring patterns while being electrically connected to the wiring patterns, and a sealing member for sealing the light emitting elements, as well as a method for manufacturing thereof, it becomes possible to provide a light emitting device that achieves sufficient electrical insulation and has simple manufacturing processes so that it can be manufactured at a low cost, and a method for manufacturing the same.
摘要翻译：通过使用包括绝缘基板和形成在绝缘基板上的发光单元的发光装置，发光单元包括：彼此平行地布置在绝缘基板上的多个线性布线图案，多个发光元件安装在布线图案之间，同时电连接到布线图案，以及用于密封发光元件的密封构件及其制造方法，可以提供实现足够的电绝缘的发光器件并且具有简单的制造工艺，从而可以以低成本制造它们及其制造方法。

6. 发明授权

US08632226B2 Lighting system 有权
标题翻译：照明系统
公开(公告)号：US08632226B2
公开(公告)日：2014-01-21
申请号：US13275037
申请日：2011-10-17
申请人： Toshio Hata , Shinya Ishizaki , Makoto Agatani
发明人： Toshio Hata , Shinya Ishizaki , Makoto Agatani
IPC分类号： F21V7/00 , F21V23/00
CPC分类号： F21V11/06 , F21K9/232 , F21Y2105/10 , F21Y2115/10 , H01L2224/48137
摘要： There is provided a lighting system capable of suppressing a decrease in light output while preventing occurrence of glare. The lighting system of the present invention includes a light-emitting device and a jig for light control. The light-emitting device includes a plurality of light-emitting elements arranged so as to be distributed on a substrate, and the jig for light control is made up of a resin plate having a plurality of discrete openings for light-emitting surface partitioned by a louver. The light-emitting device and the jig for light control are overlaid so that a light-emitting portion is exposed from the plurality of discrete openings for light-emitting surface.
摘要翻译：提供了一种能够抑制光输出降低同时防止眩光发生的照明系统。本发明的照明系统包括发光装置和用于光控制的夹具。发光装置包括多个被配置为分布在基板上的发光元件，并且用于光控制的夹具由具有多个分开的用于由百叶窗发光装置和用于光控制的夹具重叠，使得发光部从多个用于发光表面的离散开口露出。

7. 发明授权

US08431952B2 Light emitting device 有权
标题翻译：发光装置
公开(公告)号：US08431952B2
公开(公告)日：2013-04-30
申请号：US13216548
申请日：2011-08-24
申请人： Toshio Hata , Takahiro Nemoto
发明人： Toshio Hata , Takahiro Nemoto
IPC分类号： H01L33/00
CPC分类号： H01L25/167 , H01L33/486 , H01L33/62 , H01L2224/48091 , H01L2224/48137 , H01L2224/48247 , H01L2224/48465 , H01L2924/3025 , H01L2924/00014 , H01L2924/00
摘要： In order to provide a light emitting device at low costs with high reliability, while suppressing deterioration in luminance of light emitting elements due to the existence of a protection element, the protection element is mounted on a mounting surface of a first lead terminal located inside a cavity in a resin section, and a light emitting element is mounted on a bottom of a recess section of a second lead terminal located in the cavity, so that the protection element is located above the light emitting device.
摘要翻译：为了以低成本提供高可靠性的发光器件，在抑制由于存在保护元件而发光元件的亮度劣化的同时，将保护元件安装在位于第一引线端子的内部的第一引线端子的安装面上树脂部分中的空腔，并且发光元件安装在位于空腔中的第二引线端子的凹部的底部，使得保护元件位于发光器件上方。

8. 发明授权

US08206999B2 Chip-type LED and method for manufacturing the same 有权
标题翻译：芯片型LED及其制造方法
公开(公告)号：US08206999B2
公开(公告)日：2012-06-26
申请号：US13162295
申请日：2011-06-16
申请人： Makoto Matsuda , Toshio Hata
发明人： Makoto Matsuda , Toshio Hata
IPC分类号： H01L33/00
CPC分类号： H01L33/486 , H01L33/508 , H01L33/54 , H01L33/62 , H01L2224/45144 , H01L2224/48227 , H01L2224/48228 , H01L2224/48091 , H01L2924/00014 , H01L2924/00
摘要： In a chip-type LED according to an embodiment of the present invention, a first recess hole for mounting an LED chip and a second recess hole for connecting a fine metal wire are formed in an insulating substrate, a metal sheet serving as a first wiring pattern is formed at a portion that includes the first recess hole, a metal sheet serving as a second wiring pattern is formed at a portion that includes the second recess hole, an LED chip is mounted on the metal sheet within the first recess hole, the LED chip is electrically connected to the metal sheet within the second recess hole via a fine metal wire, the LED chip including the first recess hole and the fine metal wire including the second recess hole are encapsulated in a first transparent resin that contains a fluorescent material, a surface of the insulating substrate including the first transparent resin is encapsulated in a second transparent resin.
摘要翻译：在根据本发明的实施例的芯片型LED中，在绝缘基板中形成用于安装LED芯片的第一凹部孔和用于连接细金属丝的第二凹部孔，用作第一布线在包括第一凹槽的部分形成图案，在包括第二凹槽的部分形成用作第二布线图案的金属片，在第一凹槽内的金属片上安装LED芯片， LED芯片通过细金属线电连接到第二凹槽内的金属片，包括第一凹部孔和包括第二凹部孔的细金属线的LED芯片封装在包含荧光材料的第一透明树脂中包含第一透明树脂的绝缘基板的表面被封装在第二透明树脂中。

9. 发明申请

US20110299268A1 LIGHT-EMITTING DEVICE 有权
标题翻译：发光装置
公开(公告)号：US20110299268A1
公开(公告)日：2011-12-08
申请号：US13152587
申请日：2011-06-03
申请人： Shinya Ishizaki , Tomokazu Nada , Makoto Agatani , Makoto Matsuda , Shinji Osaki , Tatsuya Morioka , Hitoshi Matsushita , Toyonori Uemura , Toshio Hata
发明人： Shinya Ishizaki , Tomokazu Nada , Makoto Agatani , Makoto Matsuda , Shinji Osaki , Tatsuya Morioka , Hitoshi Matsushita , Toyonori Uemura , Toshio Hata
IPC分类号： F21V9/16 , F21V7/00
CPC分类号： H05B33/22 , H01L25/0753 , H01L33/60 , H01L33/62 , H01L2224/48137 , H01L2224/48139
摘要： The light-emitting device includes: a substrate which has a single layer structure in which a conductive member is partially provided on a surface of the substrate; a plurality of light-emitting elements which are directly provided on the surface of the substrate so as to be electrically connected with the conductive member; a first light reflection resin layer; a second light reflection resin layer which is provided in a looped shape on the surface of the substrate so as to surround an area in which the plurality of light-emitting elements are provided; and a sealing resin which covers the plurality of light-emitting elements. In the area in which the plurality of light-emitting elements are provided, the conductive member is covered with the first light reflection resin layer, the conductive member, which is provided under the second light reflection resin layer, is covered with the second light reflection resin layer directly, and a printed resistor, which is provided under the second light reflection resin layer, is covered with the second light reflection resin layer via the first light reflection resin layer. This makes it possible to provide the light-emitting device which (i) reduces absorption of light so as to achieve excellent light extraction efficiency, and (ii) is highly reliable.
摘要翻译：发光装置包括：具有单层结构的基板，其中导电构件部分地设置在基板的表面上; 多个发光元件，其直接设置在所述基板的表面上以与所述导电构件电连接; 第一光反射树脂层; 第二光反射树脂层，其以环状设置在所述基板的表面上，以围绕设置有所述多个发光元件的区域; 以及覆盖多个发光元件的密封树脂。在设置有多个发光元件的区域中，导电部件被第一光反射树脂层覆盖，设置在第二光反射树脂层下方的导电部件被第二光反射覆盖树脂层和设置在第二光反射树脂层下方的印刷电阻器经由第一光反射树脂层被第二光反射树脂层覆盖。这使得可以提供（i）减少光的吸收以获得优异的光提取效率的发光装置，（ii）高可靠性。

10. 发明授权

US07939349B2 Nitride-based semiconductor light emitting device and manufacturing method thereof 有权
标题翻译：氮化物系半导体发光元件及其制造方法
公开(公告)号：US07939349B2
公开(公告)日：2011-05-10
申请号：US11494845
申请日：2006-07-27
申请人： Norikatsu Koide , Toshio Hata , Mayuko Fudeta , Daigaku Kimura
发明人： Norikatsu Koide , Toshio Hata , Mayuko Fudeta , Daigaku Kimura
IPC分类号： H01L21/00
CPC分类号： H01L33/22 , H01L33/38 , H01L33/42
摘要： The nitride-based semiconductor light-emitting device and manufacturing method thereof are disclosed: the nitride-based semiconductor light-emitting device includes a reflective layer formed on a support substrate, a p-type nitride-based semiconductor layer, a light-emitting layer and an n-type nitride-based semiconductor layer successively formed on the reflective layer, wherein irregularities are formed on a light extracting surface located above the n-type nitride-based semiconductor layer.
摘要翻译：公开了氮化物系半导体发光元件及其制造方法：氮化物系半导体发光元件具备形成在支撑基板上的反射层，p型氮化物系半导体层，发光层以及依次形成在所述反射层上的n型氮化物系半导体层，其中在位于所述n型氮化物基半导体层上方的光提取面上形成凹凸。

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