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71. 发明申请

US20100174245A1 System for pretreating the lumen of a catheter 审中-公开
标题翻译：用于预处理导管内腔的系统
公开(公告)号：US20100174245A1
公开(公告)日：2010-07-08
申请号：US12319527
申请日：2009-01-08
申请人： Ward Dean Halverson , Ying Jun Du
发明人： Ward Dean Halverson , Ying Jun Du
IPC分类号： A61L29/14 , C23C14/35 , C23C14/34
CPC分类号： A61L29/14 , A61L2400/18 , B05D3/144 , B05D7/222 , H01J37/32192 , H01J37/32293
摘要： A method of and system for pretreating the lumen of a catheter or small diameter tubing. A vacuum chamber includes a microwave port and a microwave supply subsystem including a microwave generator, and a circular polarizer produces circularly polarized microwaves propagated into the vacuum chamber via the port at a frequency which produces electron cyclotron resonance. A magnetic coil about the vacuum chamber generates a magnetic field in the vacuum chamber with magnetic field lines co-linear with the propagation direction of the microwaves. A catheter manifold positions at least one catheter in the vacuum chamber and supplies a gas within the catheter lumen to generate a plasma in the lumen for pretreating the same.
摘要翻译：用于预处理导管或小直径管腔的方法和系统。真空室包括微波端口和包括微波发生器的微波供应子系统，圆偏振器以产生电子回旋共振的频率经由端口传播到真空室中的圆偏振微波。围绕真空室的磁性线圈在真空室中产生磁场，其磁场线与微波的传播方向共线。导管歧管将至少一个导管定位在真空室中并且在导管内腔内提供气体以在管腔中产生等离子体以用于对其进行预处理。

72. 发明申请

US20100043976A1 PLASMA PROCESSING APPARATUS 有权
标题翻译：等离子体加工设备
公开(公告)号：US20100043976A1
公开(公告)日：2010-02-25
申请号：US12240293
申请日：2008-09-29
申请人： Seiichi WATANABE , Naoki YASUI , Susumu TAUCHI , Yasuhiro NISHIMORI
发明人： Seiichi WATANABE , Naoki YASUI , Susumu TAUCHI , Yasuhiro NISHIMORI
IPC分类号： H01L21/3065
CPC分类号： H01J37/32293 , H01J37/32192 , H01J37/32229 , H01J37/32449 , H01J2237/2001
摘要： A plasma processing apparatus includes: a decompression chamber of which the inside is depressed; a gas supply unit that supplies process gas into said chamber; a microwave supply unit that supplies a microwave into the chamber to generate plasma; an object-placing electrode where a processing material, is placed and which holds the processing material in the chamber; and a vacuuming unit that is connected to the chamber to discharge the gas in the chamber, in which the chamber, a part for providing gas into the chamber of the gas supply unit, a part for introducing a microwave into the chamber of the microwave supply unit, the object-placing electrode, and the vacuuming unit are disposed coaxially with the center axis of the chamber, and the part for introducing a microwave includes a microwave rotation generator that rotates a polarization plane of the input microwave and supplies the microwave to the chamber.
摘要翻译：等离子体处理装置包括：内部被压下的减压室; 气体供给单元，其将处理气体供给到所述室中; 微波供应单元，其将微波供应到所述室中以产生等离子体; 物体放置电极，其中处理材料被放置并将处理材料保持在所述室中; 以及抽吸单元，其连接到所述室以排出所述室中的气体，其中所述室，用于将气体提供到所述气体供应单元的室中的部分，用于将微波引入所述微波供应室单元，物体放置电极和抽真空单元与腔室的中心轴同轴设置，用于引入微波的部件包括微波旋转发生器，其旋转输入微波的偏振面并将微波提供给房间。

73. 发明授权

US06847003B2 Plasma processing apparatus 失效
公开(公告)号：US06847003B2
公开(公告)日：2005-01-25
申请号：US09975067
申请日：2001-10-12
申请人： Nobuo Ishii , Kibatsu Shinohara
发明人： Nobuo Ishii , Kibatsu Shinohara
IPC分类号： H01J37/32 , B23K10/00
CPC分类号： H01J37/32229 , H01J37/32192 , H01J37/32293
摘要： A plasma processing apparatus includes a processing container 53, a mounting table 61 arranged in the processing container 53 to support a wafer W, a sealing plate 55 opposed to the wafer W supported by the mounting table 61, an annular antenna 73 arranged on the sealing plate 55 and consisting of an annular waveguide to introduce a microwave into the processing container 53 through the sealing plate 55, the annular antenna 73 being arranged so that a plane containing an annular waveguide path defined by the annular waveguide is generally parallel with the sealing plate 55, a directional coupler 79 arranged on the periphery of the annular antenna 73, a propagation waveguide 81 connected to the directional coupler 79 and a microwave oscillator 83 connected to the propagation waveguide 81. Accordingly, it is possible to form an uniform microwave in the antenna, so that an uniform plasma can be produced in the processing container.

74. 发明申请

US20020050486A1 Plasma processing apparatus 失效
标题翻译：等离子体处理装置
公开(公告)号：US20020050486A1
公开(公告)日：2002-05-02
申请号：US09975067
申请日：2001-10-12
发明人： Nobuo Ishii , Kibatsu Shinohara
IPC分类号： B23K010/00 , B23K009/00
CPC分类号： H01J37/32229 , H01J37/32192 , H01J37/32293
摘要： A plasma processing apparatus includes a processing container 53, a mounting table 61 arranged in the processing container 53 to support a wafer W, a sealing plate 55 opposed to the wafer W supported by the mounting table 61, an annular antenna 73 arranged on the sealing plate 55 and consisting of an annular waveguide to introduce a microwave into the processing container 53 through the sealing plate 55, the annular antenna 73 being arranged so that a plane containing an annular waveguide path defined by the annular waveguide is generally parallel with the sealing plate 55, a directional coupler 79 arranged on the periphery of the annular antenna 73, a propagation waveguide 81 connected to the directional coupler 79 and a microwave oscillator 83 connected to the propagation waveguide 81. Accordingly, it is possible to form an uniform microwave in the antenna, so that an uniform plasma can be produced in the processing container.
摘要翻译：等离子体处理装置包括处理容器53，布置在处理容器53中以支撑晶片W的安装台61，与由安装台61支撑的晶片W相对的密封板55，设置在密封件上的环形天线73 板55由环形波导构成，环形波导通过密封板55将微波引入处理容器53中，环形天线73布置成使得包含由环形波导限定的环形波导路径的平面大致平行于密封板 55是配置在环形天线73的周边的定向耦合器79，与定向耦合器79连接的传播波导81和与传播波导81连接的微波振荡器83.因此，可以在天线，使得可以在处理容器中产生均匀的等离子体。

75. 发明专利

JP6096547B2 プラズマ処理装置及びシャワープレート有权
公开(公告)号：JP6096547B2
公开(公告)日：2017-03-15
申请号：JP2013058663
申请日：2013-03-21
申请人：東京エレクトロン株式会社
发明人：河西繁 , 池田太郎 , 藤野豊
IPC分类号： H01L21/31 , C23C16/455 , H05H1/46 , H01L21/205
CPC分类号： C23C16/4401 , B05B1/005 , C23C16/452 , H01J37/32192 , H01J37/32293 , H01J37/3244 , B05B1/14

76. 发明专利

JP2014189899A Film deposition apparatus, film deposition method, and film deposition program 有权
标题翻译：膜沉积装置，膜沉积方法和膜沉积程序
公开(公告)号：JP2014189899A
公开(公告)日：2014-10-06
申请号：JP2013069712
申请日：2013-03-28
申请人： Brother Ind Ltd , ブラザー工業株式会社 , Nagoya Univ , 国立大学法人名古屋大学
发明人： TAKI KAZUYA , SHINODA KENTARO , KANEDA HIDEKI , KAMISAKA HIROYUKI , TAKAOKA YASUYUKI
IPC分类号： C23C16/511 , H05H1/46
CPC分类号： H01J37/32293 , C23C16/26 , C23C16/511 , C23C16/52 , H01J37/32266 , H01J2237/3321 , H05H1/46 , H05H2001/463
摘要： PROBLEM TO BE SOLVED: To provide a film deposition apparatus, a film deposition method, and a film deposition program that can make uniform film characteristics, such as a film thickness and film hardness, of a coating formed on a surface of a material to be processed.SOLUTION: A film deposition apparatus includes: a microwave supply part which supplies a microwave for generating plasma along a processing surface of a conductive material to be processed; a negative voltage application part which applies the material to be processed with a negative bias voltage for expanding a sheath layer along the processing surface of the material to be processed; and a control part which controls the microwave supply part and negative voltage application part. The microwave supply part has a microwave supply opening which propagates the microwave to be supplied to the expanded sheath layer, and the control part controls the microwave supply part and negative voltage application part so as to change a sheath thickness of the sheath layer during the supply of the microwave.
摘要翻译：要解决的问题：提供一种能够使形成在材料表面上的涂层的膜厚度和膜硬度等膜特性均匀的膜沉积设备，成膜方法和膜沉积程序胶片沉积设备包括：微波供应部件，其沿着待处理的导电材料的处理表面供应用于产生等离子体的微波; 负电压施加部，其利用负偏压施加被处理材料，以沿着被处理材料的处理面扩展鞘层; 以及控制微波供给部和负电压施加部的控制部。微波供给部具有微波供给开口，其传播供给到扩展鞘层的微波，并且控制部控制微波供给部和负电压施加部，以便在供给期间改变鞘层的鞘厚度的微波炉。

77. 发明专利

JPWO2002058124A1 プラズマ装置及びプラズマ生成方法有权
公开(公告)号：JPWO2002058124A1
公开(公告)日：2004-05-27
申请号：JP2002558316
申请日：2002-01-18
申请人：東京エレクトロン株式会社 , 安藤真 , 真安藤
发明人：信雄石井 , 信雄石井 , 安藤　真 , 真安藤
IPC分类号： H01L21/3065 , H01J37/32 , H01Q13/22 , H05H1/46
CPC分类号： H01J37/3222 , H01J37/32192 , H01J37/32293
摘要：スロットアンテナ内部の電磁界の所望成分を選択的に取り出して容器内に供給し、プラズマ生成に利用する。スロットアンテナ(30)の放射面(31)の周方向に対するスロット(36)の傾斜角度を、放射面31の中心部Oから周縁部に向かって小さくする。

78. 发明公开

US20230220543A1 ARTIFICIAL DIAMOND PLASMA PRODUCTION DEVICE 审中-公开
公开(公告)号：US20230220543A1
公开(公告)日：2023-07-13
申请号：US17570517
申请日：2022-01-07
申请人： WAVE POWER TECHNOLOGY INC.
发明人： Ming-Hsiung TSAO , Hsuan-Hao TENG , Han-Ying CHEN
IPC分类号： C23C16/27 , C23C16/511 , H01J37/32 , C30B29/04
CPC分类号： C23C16/274 , C23C16/511 , H01J37/32238 , C30B29/04 , H01J37/32293 , H01J37/32229 , H01J2237/332
摘要： An artificial diamond plasma production device has a reaction chamber, a microwave emitting module, and a microwave lens. The microwave emitting module emits a circularly-polarized microwave into the reaction chamber. The microwave emitting module has a polarizing tube, a directing tube, a first waveguide, and a first linearly-polarized microwave source serially connected along a microwave traveling path. The microwave emitting module further has a second waveguide and a first matched load. The polarizing tube is configured to convert a linearly-polarized microwave into a circularly-polarized microwave or the other way round depending on traveling direction of the microwave. The directing tube has a first opening and a second opening which face toward different directions. The first waveguide is connected to the first opening. The first matched load is connected to the second opening via the second waveguide. Therefore, reflected microwave can be channeled out of the reaction chamber.

79. 发明授权

US10083820B2 Dual-frequency surface wave plasma source 有权
公开(公告)号：US10083820B2
公开(公告)日：2018-09-25
申请号：US15812047
申请日：2017-11-14
申请人： Tokyo Electron Limited
发明人： Sergey A. Voronin , Jason Marion , Alok Ranjan
IPC分类号： H01J37/32
CPC分类号： H01J37/32302 , H01J37/32082 , H01J37/32238 , H01J37/32293
摘要： Described herein is a technology related to a method for utilizing a dual-frequency surface wave plasma sources to provide stable ionizations on a plasma processing system. Particularly, the dual-frequency surface wave plasma sources may include a primary surface wave power plasma source and a secondary power plasma source, which is provided on each recess of a plurality of recesses. The secondary power plasma source, for example, may provide the stable ionization on the plasma processing system.

80. 发明申请

US20180138018A1 DUAL-FREQUENCY SURFACE WAVE PLASMA SOURCE 审中-公开
公开(公告)号：US20180138018A1
公开(公告)日：2018-05-17
申请号：US15812047
申请日：2017-11-14
申请人： Tokyo Electron Limited
发明人： Sergey A. Voronin , Jason Marion , Alok Ranjan
IPC分类号： H01J37/32
CPC分类号： H01J37/32302 , H01J37/32082 , H01J37/32238 , H01J37/32293
摘要： Described herein is a technology related to a method for utilizing a dual-frequency surface wave plasma sources to provide stable ionizations on a plasma processing system. Particularly, the dual-frequency surface wave plasma sources may include a primary surface wave power plasma source and a secondary power plasma source, which is provided on each recess of a plurality of recesses. The secondary power plasma source, for example, may provide the stable ionization on the plasma processing system.

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