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1. 发明专利

JP2014051715A Apparatus and method for forming film and film forming program 有权
标题翻译：用于形成薄膜和薄膜形成程序的装置和方法
公开(公告)号：JP2014051715A
公开(公告)日：2014-03-20
申请号：JP2012197874
申请日：2012-09-07
申请人： Nagoya Univ , 国立大学法人名古屋大学 , Brother Ind Ltd , ブラザー工業株式会社
发明人： SHINODA KENTARO , KANEDA HIDEKI , TAKI KAZUYA , KAMISAKA HIROYUKI , TAKAOKA YASUYUKI , OKAMOTO TAKASHI
IPC分类号： C23C16/511
CPC分类号： B05D1/007 , B05C5/001 , C23C16/26 , C23C16/511 , C23C16/52 , H01J37/32192 , H01J37/32706 , H01J2237/3321
摘要： PROBLEM TO BE SOLVED: To provide a method for forming a film capable of decreasing the dispersion of hardness distribution of a formed film.SOLUTION: The apparatus for forming a film comprises a gas supply section which supplies a raw material gas and an inert gas into a processing chamber, a microwave supply section which supplies microwave pulses which generates plasma along the processing surface of a material to be processed and a voltage application section which applies negative bias voltage pulses to the material to be processed supported in the processing chamber in order to expand a sheath layer on the processing surface of the material to be processed. The computer of the apparatus for forming a film, according to a film forming program, controls the application timing of the minus bias voltage pulses and the supply timing of the microwave pulses so that the ratio of the application time of the minus bias voltage pulses in the time of the supply time of one microwave pulse with respect to the supply time of one microwave pulse is 0.9 or more.
摘要翻译：要解决的问题：提供一种能够降低成形膜的硬度分布分散的膜的形成方法。解决方案：用于形成膜的装置包括：供给部，其将原料气体和惰性气体供给到处理室，微波供应部分，其沿着待处理材料的处理表面提供产生等离子体的微波脉冲;以及电压施加部分，其对处理室中支持的待处理材料施加负偏置电压脉冲，以便在待处理材料的处理表面上展开鞘层。根据成膜程序，用于形成膜的设备的计算机控制负偏压脉冲的施加定时和微波脉冲的供给定时，使得负偏置电压脉冲的施加时间的比例一个微波脉冲的供给时间相对于一个微波脉冲的供给时间的时间为0.9以上。

2. 发明专利

JP2014189899A Film deposition apparatus, film deposition method, and film deposition program 有权
标题翻译：膜沉积装置，膜沉积方法和膜沉积程序
公开(公告)号：JP2014189899A
公开(公告)日：2014-10-06
申请号：JP2013069712
申请日：2013-03-28
申请人： Brother Ind Ltd , ブラザー工業株式会社 , Nagoya Univ , 国立大学法人名古屋大学
发明人： TAKI KAZUYA , SHINODA KENTARO , KANEDA HIDEKI , KAMISAKA HIROYUKI , TAKAOKA YASUYUKI
IPC分类号： C23C16/511 , H05H1/46
CPC分类号： H01J37/32293 , C23C16/26 , C23C16/511 , C23C16/52 , H01J37/32266 , H01J2237/3321 , H05H1/46 , H05H2001/463
摘要： PROBLEM TO BE SOLVED: To provide a film deposition apparatus, a film deposition method, and a film deposition program that can make uniform film characteristics, such as a film thickness and film hardness, of a coating formed on a surface of a material to be processed.SOLUTION: A film deposition apparatus includes: a microwave supply part which supplies a microwave for generating plasma along a processing surface of a conductive material to be processed; a negative voltage application part which applies the material to be processed with a negative bias voltage for expanding a sheath layer along the processing surface of the material to be processed; and a control part which controls the microwave supply part and negative voltage application part. The microwave supply part has a microwave supply opening which propagates the microwave to be supplied to the expanded sheath layer, and the control part controls the microwave supply part and negative voltage application part so as to change a sheath thickness of the sheath layer during the supply of the microwave.
摘要翻译：要解决的问题：提供一种能够使形成在材料表面上的涂层的膜厚度和膜硬度等膜特性均匀的膜沉积设备，成膜方法和膜沉积程序胶片沉积设备包括：微波供应部件，其沿着待处理的导电材料的处理表面供应用于产生等离子体的微波; 负电压施加部，其利用负偏压施加被处理材料，以沿着被处理材料的处理面扩展鞘层; 以及控制微波供给部和负电压施加部的控制部。微波供给部具有微波供给开口，其传播供给到扩展鞘层的微波，并且控制部控制微波供给部和负电压施加部，以便在供给期间改变鞘层的鞘厚度的微波炉。

3. 发明专利

JP2014189898A Film deposition apparatus, film deposition method, and film deposition program 有权
标题翻译：膜沉积装置，膜沉积方法和膜沉积程序
公开(公告)号：JP2014189898A
公开(公告)日：2014-10-06
申请号：JP2013069711
申请日：2013-03-28
申请人： Brother Ind Ltd , ブラザー工業株式会社 , Nagoya Univ , 国立大学法人名古屋大学
发明人： SHINODA KENTARO , TAKI KAZUYA , KANEDA HIDEKI , KAMISAKA HIROYUKI , TAKAOKA YASUYUKI
IPC分类号： C23C16/511 , C23C16/52 , H05H1/46
CPC分类号： H05H1/46 , C23C16/511 , C23C16/52 , H05H2001/463
摘要： PROBLEM TO BE SOLVED: To provide a film deposition apparatus, a film deposition method, and a film deposition program that can deposit a coating with desired film characteristics on a surface of a material to be processed in a short time.SOLUTION: A film deposition apparatus includes: a microwave supply part which supplies microwave pulses for generating plasma along a processing surface of a conductive material to be processed; a negative voltage application part which applies a negative bias voltage for expanding a sheath layer along the processing surface of the material to be processed to the material to be processed; a microwave supply port which propagates the microwave pulses supplied from the microwave supply part to the sheath layer; and a control part which controls the microwave supply part and negative voltage application part. The control part controls the microwave supply part so that a duty ratio as the ratio of a supply time of one microwave pulse to a period of the microwave pulses supplied during film deposition varies, and the duty ratio includes a first duty ratio and a second duty ratio different from the first duty ratio.
摘要翻译：要解决的问题：提供一种可以在短时间内在待处理材料的表面上沉积具有期望的膜特性的涂层的成膜装置，成膜方法和膜沉积程序。解决方案：膜沉积装置包括：微波供给部，其沿着待处理的导电材料的处理面供给用于产生等离子体的微波脉冲; 负电压施加部，其将沿着被处理材料的处理面扩展鞘层的负偏压施加到待处理材料; 微波供给口，其将从微波供给部供给的微波脉冲传播到鞘层; 以及控制微波供给部和负电压施加部的控制部。控制部控制微波供给部，使得作为一个微波脉冲的供给时间与膜成膜期间供给的微波脉冲的周期的比率的占空比变化，占空比包含第一占空比和第二占空比比率与第一个占空比不同。

4. 发明专利

JP2014189897A Film deposition apparatus 有权
标题翻译：胶片沉积装置
公开(公告)号：JP2014189897A
公开(公告)日：2014-10-06
申请号：JP2013069710
申请日：2013-03-28
申请人： Brother Ind Ltd , ブラザー工業株式会社 , Nagoya Univ , 国立大学法人名古屋大学
发明人： KANEDA HIDEKI , SHINODA KENTARO , TAKI KAZUYA , KAMISAKA HIROYUKI , TAKAOKA YASUYUKI
IPC分类号： C23C16/511 , H05H1/46
CPC分类号： C23C16/511 , C23C16/26 , H01J37/32201 , H01J37/32266 , H05H1/46 , H05H2001/463
摘要： PROBLEM TO BE SOLVED: To provide a film deposition apparatus capable of suppressing unnecessary consumption of energy by suppressing propagation of a surface wave to a wire, connected to a negative voltage application terminal member, etc.SOLUTION: A film deposition apparatus includes: a microwave supply part which supplies a microwave for generating plasma along a processing surface of a conductive material to be processed; a negative voltage application part which applies the material to be processed with a negative bias voltage for expanding a sheath layer along the processing surface of the material to be processed; a microwave supply opening which propagates the microwave supplied from the microwave supply part to the expanded sheath layer; a negative voltage application terminal member which is provided at a position opposite the microwave supply opening across at least a part of the material to be processed, which applies the material to be processed with a negative bias voltage applied by the negative voltage application part; and a surface wave control member which is provided projecting from an outer peripheral part of the negative voltage application terminal member to a sheath thickness direction of the sheath layer, and has a reflective power to the microwave propagated in the sheath layer.
摘要翻译：要解决的问题：提供一种能够通过抑制表面波对连接到负电压施加端子构件等的导线的传播来抑制不必要的能量消耗的成膜装置。解决方案：一种成膜装置，包括：微波供给部件，其沿着待处理的导电材料的处理表面供给用于产生等离子体的微波; 负电压施加部，其利用负偏压施加被处理材料，以沿着被处理材料的处理面扩展鞘层; 微波供给开口，其将从微波供给部供给的微波传播到扩展鞘层; 负电压施加端子构件，其设置在穿过所述待处理材料的至少一部分的与所述微波供应开口相对的位置，所述负电压施加端子构件以由所述负电压施加部施加的负偏压施加所述待处理材料; 以及表面波控制部件，其从所述负电压施加端子部件的外周部向所述护套层的护套厚度方向突出设置，并且对所述护套层中传播的微波具有反射功率。

5. 发明专利

JP2014189900A Film deposition apparatus 有权
标题翻译：胶片沉积装置
公开(公告)号：JP2014189900A
公开(公告)日：2014-10-06
申请号：JP2013069713
申请日：2013-03-28
申请人： Brother Ind Ltd , ブラザー工業株式会社 , Nagoya Univ , 国立大学法人名古屋大学
发明人： SHINODA KENTARO , TAKI KAZUYA , KANEDA HIDEKI , KAMISAKA HIROYUKI , TAKAOKA YASUYUKI
IPC分类号： C23C16/44 , C23C16/511 , H05H1/46
CPC分类号： C23C16/511 , C23C16/458 , H05H2001/463
摘要： PROBLEM TO BE SOLVED: To provide a film deposition apparatus capable of reducing arcing and improving productivity by reducing sticking of film component on a microwave introduction surface of a microwave introduction opening.SOLUTION: A film deposition apparatus includes: a microwave supply part which supplies a microwave for generating plasma along a processing surface of a center conductor at least including a conductive material to be processed; a negative voltage application part which applies the material to be processed with a negative bias voltage for expanding a sheath layer along the processing surface of the material to be processed; a microwave introduction opening which propagates the microwave supplied by the microwave supply part to the expanded sheath layer through a microwave introduction surface; and an enclosure wall part which surrounds the microwave introduction surface of the microwave introduction opening and projects from the microwave introduction surface in a propagation direction in which the microwave is propagated.
摘要翻译：要解决的问题：提供一种能够通过减少微波导入开口的微波导入面上的膜成分的粘附而降低电弧并提高生产率的成膜装置。解决方案：一种成膜装置，包括：微波供给部，用于沿着至少包括要处理的导电材料的中心导体的处理表面产生等离子体的微波炉; 负电压施加部，其利用负偏压施加被处理材料，以沿着被处理材料的处理面扩展鞘层; 微波引入开口，其通过微波引入表面将由微波供应部供应的微波传播到扩展的鞘层; 以及围绕微波导入口的微波导入面并在微波传播的传播方向上从微波导入面突出的封闭壁部。

6. 发明专利

JP2013155409A Film forming apparatus and film forming method 有权
标题翻译：薄膜成型装置和薄膜成型方法
公开(公告)号：JP2013155409A
公开(公告)日：2013-08-15
申请号：JP2012016960
申请日：2012-01-30
申请人： Brother Industries Ltd , ブラザー工業株式会社 , Nagoya Univ , 国立大学法人名古屋大学
发明人： SHINODA KENTARO , KANEDA HIDEKI , TAKI KAZUYA , UMEHARA TOKUJI , KAMISAKA HIROYUKI , TAKAOKA YASUYUKI
IPC分类号： C23C16/52 , C23C16/511 , F16C33/14
摘要： PROBLEM TO BE SOLVED: To provide a film forming apparatus and a film forming method, capable of rapidly forming a hard film on a surface of a metal substrate while suppressing a reduction in hardness of the metal substrate.SOLUTION: In the method for forming a film on a surface of the metal substrate M within a treatment container 1 provided with a gas supply unit 4 capable of supplying a raw material gas and an inert gas and a plasma generation unit 5, the temperature of the metal substrate M is measured, a remaining time before the end of film forming and a temperature process to the end of film forming are calculated from the measured temperature, and a tempering parameter at the end of film forming is calculated based on them. The calculated parameter is compared with a set tempering parameter which is set so as not to cause hardness reduction of the metal substrate, and when the tempering parameter at the end of film forming is larger than the set tempering parameter, the film forming is performed while setting a film forming condition such that the tempering parameter at the end of film forming becomes smaller.
摘要翻译：要解决的问题：提供一种能够在抑制金属基材的硬度降低的同时在金属基材的表面上快速形成硬膜的成膜装置和成膜方法。方案：在形成在具有能够供给原料气体和惰性气体的气体供给单元4的处理容器1内的金属基板M的表面上的膜和等离子体产生单元5，测量金属基板M的温度，根据测量温度计算成膜结束前的剩余时间和成膜结束时的温度处理，并根据它们计算成膜结束时的回火参数。将计算出的参数与设定为不会导致金属基板的硬度降低的设定回火参数进行比较，当成膜结束时的回火参数大于设定回火参数时，进行成膜，同时进行成膜设定成膜条件，使得成膜结束时的回火参数变小。

7. 发明专利

JP2015048510A 成膜装置及び治具有权
标题翻译：胶片沉积装置，
公开(公告)号：JP2015048510A
公开(公告)日：2015-03-16
申请号：JP2013181391
申请日：2013-09-02
申请人：ブラザー工業株式会社 , Brother Ind Ltd
发明人： TAKI KAZUYA , KANEDA HIDEKI , SHINODA KENTARO
IPC分类号： C23C16/511 , C01B31/02 , C23C16/27 , G01J5/00 , H05H1/00 , H05H1/46
摘要：【課題】成膜中における被加工材料の表面温度を、放射温度計を用いて低誤差で測定することが可能となる成膜装置及び治具を提供する。【解決手段】導電性を有する被加工材料の処理表面に沿うシース層を拡大させる負のバイアス電圧を被加工材料に印加させる負電極部材と、被加工材料の処理表面に沿ってプラズマを生成させるためのマイクロ波を拡大されたシース層へ伝搬させるマイクロ波供給口と、マイクロ波供給口と負電極部材との少なくとも一方と、被加工材料との間に配置されて、被加工材料に取り付けられる治具と、放射温度計と、を備え、被加工材料に取り付けられる治具のうち、少なくとも一の治具は、放射温度計によって測定される温度測定領域を有し、放射温度計によって測定される温度測定領域の測定面は、被加工材料の処理表面に成膜される皮膜の放射率、又は前記皮膜の放射率と同等の放射率を有するように構成する。【選択図】図1
摘要翻译：要解决的问题：提供一种能够通过使用辐射温度计以低误差测量沉积中的处理材料的表面温度的成膜装置和夹具。解决方案：一种成膜装置，包括：负极部件，用于施加负偏压用于将具有导电性的被处理材料的被处理表面的鞘层扩大到待加工材料; 微波馈送端口，用于将沿着被处理材料的处理表面形成等离子体的微波发送到扩大的鞘层; 布置在所述微波馈送端口和所述负极部件中的至少一个之间的夹具，并附接到所述被处理材料; 和辐射温度计。在被加工材料附着的夹具中，至少一个夹具具有由辐射温度计测量的温度测量区域。由辐射温度计测量的温度测量区域的测量面构成为要在被处理材料的处理表面上形成的皮肤的发射率或与皮肤相同的发射率。

8. 发明专利

JP2011053072A Abrasion tester, abrasion test piece, and abrasion test method 有权
标题翻译：磨料测试仪，磨损测试仪和磨损测试方法
公开(公告)号：JP2011053072A
公开(公告)日：2011-03-17
申请号：JP2009201991
申请日：2009-09-01
申请人： Brother Industries Ltd , ブラザー工業株式会社
发明人： IWATA NAONORI , KAWAGUCHI EMI , SHINODA KENTARO
IPC分类号： G01N3/56
摘要： PROBLEM TO BE SOLVED: To provide an abrasion test piece and an abrasion tester, capable of uniformly setting a surface pressure on an abrasion surface and reliably obtaining data.
SOLUTION: The test piece 11 includes a cylindrical unit 28, and a flange 29. The test piece 12 is disposed opposite to the test piece 11. The flange 29 is radially protruded from the cylindrical unit 28 toward the outside. Key grooves 24 are provided on an outer circumference 32 in the flange 29. A key 22 of a drive 15 is engaged with the key groove 24. A rotational torque is applied to the cylindrical unit 28. The drive 15 slides the test piece 11 toward the test piece 12. Four key grooves 24 are circumferentially disposed and equally spaced in the flange 29. A depth of the key groove 24 is set so as to prevent the rotational torque applied to the flange 29 from affecting a pressing force applied to the cylindrical unit 28.
COPYRIGHT: (C)2011,JPO&INPIT
摘要翻译：要解决的问题：提供能够均匀地设定磨损面上的表面压力并可靠地获得数据的磨损试验片和磨损试验机。试验片11包括圆柱形单元28和凸缘29.试验片12与试验片11相对设置。凸缘29从圆筒形单元28向外侧径向突出。键槽24设置在凸缘29的外周32上。驱动器15的键22与键槽24接合。旋转扭矩施加到圆筒形单元28上。驱动器15将测试件11向着四个键槽24在凸缘29周向地设置和等间隔。键槽24的深度被设定为防止施加到凸缘29上的旋转扭矩影响施加到圆柱形的压力单位28.版权所有（C）2011年，JPO＆INPIT

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