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1. 发明申请

US20100043976A1 PLASMA PROCESSING APPARATUS 有权
标题翻译：等离子体加工设备
公开(公告)号：US20100043976A1
公开(公告)日：2010-02-25
申请号：US12240293
申请日：2008-09-29
申请人： Seiichi WATANABE , Naoki YASUI , Susumu TAUCHI , Yasuhiro NISHIMORI
发明人： Seiichi WATANABE , Naoki YASUI , Susumu TAUCHI , Yasuhiro NISHIMORI
IPC分类号： H01L21/3065
CPC分类号： H01J37/32293 , H01J37/32192 , H01J37/32229 , H01J37/32449 , H01J2237/2001
摘要： A plasma processing apparatus includes: a decompression chamber of which the inside is depressed; a gas supply unit that supplies process gas into said chamber; a microwave supply unit that supplies a microwave into the chamber to generate plasma; an object-placing electrode where a processing material, is placed and which holds the processing material in the chamber; and a vacuuming unit that is connected to the chamber to discharge the gas in the chamber, in which the chamber, a part for providing gas into the chamber of the gas supply unit, a part for introducing a microwave into the chamber of the microwave supply unit, the object-placing electrode, and the vacuuming unit are disposed coaxially with the center axis of the chamber, and the part for introducing a microwave includes a microwave rotation generator that rotates a polarization plane of the input microwave and supplies the microwave to the chamber.
摘要翻译：等离子体处理装置包括：内部被压下的减压室; 气体供给单元，其将处理气体供给到所述室中; 微波供应单元，其将微波供应到所述室中以产生等离子体; 物体放置电极，其中处理材料被放置并将处理材料保持在所述室中; 以及抽吸单元，其连接到所述室以排出所述室中的气体，其中所述室，用于将气体提供到所述气体供应单元的室中的部分，用于将微波引入所述微波供应室单元，物体放置电极和抽真空单元与腔室的中心轴同轴设置，用于引入微波的部件包括微波旋转发生器，其旋转输入微波的偏振面并将微波提供给房间。

2. 发明申请

US20090165955A1 PLASMA PROCESSING APPARATUS AND METHOD WITH CONTROLLED BIASING FUNCTIONS 审中-公开
标题翻译：等离子体处理装置和具有控制偏心函数的方法
公开(公告)号：US20090165955A1
公开(公告)日：2009-07-02
申请号：US12400095
申请日：2009-03-09
申请人： Masahiro SUMIYA , Naoki YASUI , Seiichi WATANABE
发明人： Masahiro SUMIYA , Naoki YASUI , Seiichi WATANABE
IPC分类号： C23F1/00
CPC分类号： C23C16/5096 , C23C16/4401 , H01J37/32165
摘要： A plasma processing apparatus including: a phase controller for controlling a phase difference between biasing power supplied to the antenna biasing electrode and biasing power supplied to the substrate electrode to have a difference of 180°±45°; wherein the biasing power supplied to the antenna biasing electrode and the biasing power supplied to the substrate electrode have a same frequency, which same frequency is lower than a frequency of the RF power for plasma generation. A plurality of filters is included, to perform a variety of filtering.
摘要翻译：一种等离子体处理装置，包括：相位控制器，用于控制提供给天线偏置电极的偏置功率与提供给基板电极的偏置功率之间的相位差具有180°±45°的差; 其中提供给天线偏置电极的偏置功率和提供给基板电极的偏置功率具有相同的频率，其频率低于用于等离子体产生的RF功率的频率。包括多个滤波器，以执行各种滤波。

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