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    • 72. 发明授权
    • Brittle nonmetallic workpiece and method and device for making same
    • 脆性非金属工件及其制造方法及装置
    • US08497451B2
    • 2013-07-30
    • US12141091
    • 2008-06-18
    • Mu-Chi HsuQing LiuGuo-Han YueChi-Lu ChihJun-Qi Li
    • Mu-Chi HsuQing LiuGuo-Han YueChi-Lu ChihJun-Qi Li
    • B23K26/00C03B33/02C03B33/09
    • C03B33/091B23K26/0736B23K26/146B23K26/364B23K26/40B23K2103/50C03B33/04Y10T225/12Y10T225/307Y10T428/315
    • An exemplary brittle non-metallic workpiece (70) is made by the laser beam (31), a cutting surface (701 ) of the brittle non-metallic workpiece has no micro cracks. A method for making the brittle non-metallic workpiece includes: focusing a laser beam on the brittle non-metallic substrate to form an elliptic beam spot; driving the laser beam to move along a predetermined curved cutting path, making a center of a major axis of the elliptic beam spot intersecting along the predetermined curved cutting path and the major axis being tangent to the predetermined curved cutting path at the intersecting point; a coolant stream following the elliptic beam spot to move, thus producing a crack in the brittle non-metallic substrate corresponding to the predetermined curved cutting path; separating the brittle non-metallic substrate along the crack. A laser cutting device (40) for making the same is also provided.
    • 通过激光束(31)制成示例性的脆性非金属工件(70),脆性非金属工件的切割面(701)没有微裂纹。 制造脆性非金属工件的方法包括:将激光束聚焦在脆性非金属基底上以形成椭圆形光斑; 驱动所述激光束沿着预定的弯曲切割路径移动,使得所述椭圆光束点的长轴的中心沿着所述预定弯曲切割路径相交,并且所述长轴在所述交叉点处与所述预定弯曲切割路径相切; 沿着椭圆形光束点移动的冷却剂流,从而在对应于预定弯曲切割路径的脆性非金属基板中产生裂纹; 沿着裂纹分离脆性非金属基材。 还提供了一种用于制造它的激光切割装置(40)。
    • 74. 发明申请
    • HYDROCHLORIC ACID ETCH AND LOW TEMPERATURE EPITAXY IN A SINGLE CHAMBER FOR RAISED SOURCE-DRAIN FABRICATION
    • 在一个单一的室中的氢氯酸盐和低温外延,用于提高源水排放
    • US20120142121A1
    • 2012-06-07
    • US12960736
    • 2010-12-06
    • Prasanna KhareNicolas LoubetQing Liu
    • Prasanna KhareNicolas LoubetQing Liu
    • H01L21/306
    • H01L21/02661H01L21/02639H01L29/66628H01L29/66636
    • A raised source-drain structure is formed using a process wherein a semiconductor structure is received in a process chamber that is adapted to support both an etching process and an epitaxial growth process. This semiconductor structure includes a source region and a drain region, wherein the source and drain regions each include a damaged surface layer. The process chamber is controlled to set a desired atmosphere and set a desired temperature. At the desired atmosphere and temperature, the etching process of process chamber is used to remove the damaged surface layers from the source and drain regions and expose an interface surface. Without releasing the desired atmosphere and while maintaining the desired temperature, the epitaxial growth process of the process chamber is used to grow, from the exposed interface surface, a raised region above each of the source and drain regions.
    • 使用其中半导体结构被接收在适于支持蚀刻工艺和外延生长工艺两者的处理室中的工艺来形成凸起的源极 - 漏极结构。 该半导体结构包括源极区和漏极区,其中源区和漏区各自包括受损的表面层。 控制处理室以设定所需的气氛并设定所需的温度。 在所需的气氛和温度下,处理室的蚀刻过程用于从源极和漏极区域去除损坏的表面层并暴露界面。 在不释放期望的气氛的同时保持期望的温度,处理室的外延生长过程用于从暴露的界面表面生长在源极和漏极区之上的凸起区域。