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    • 74. 发明授权
    • Method and apparatus for centralized snoop filtering
    • 用于集中侦听过滤的方法和装置
    • US06810467B1
    • 2004-10-26
    • US09643382
    • 2000-08-21
    • Manoj KhareFaye A. BriggsKai ChengLily Pao Looi
    • Manoj KhareFaye A. BriggsKai ChengLily Pao Looi
    • G06F1208
    • G06F12/0831G06F12/0822G06F12/0828G06F2212/507
    • An example embodiment of a computer system utilizing a central snoop filter includes several nodes coupled together via a switching device. Each of the nodes may include several processors and caches as well as a block of system memory. All traffic from one node to another takes place through the switching device. The switching device includes a snoop filter that tracks cache line coherency information for all caches in the computer system. The snoop filter has enough entries to track the tags and state information for all entries in all caches in all of the system's nodes. In addition to the tag and state information, the snoop filter stores information indicating which of the nodes has a copy of each cache line. The snoop filter serves in part to keep snoop transactions from being performed at nodes that do not contain a copy of the subject cache line, thereby reducing system overhead, reducing traffic across the system interconnect busses, and reducing the amount of time required to perform snoop transactions.
    • 利用中央窥探滤波器的计算机系统的示例性实施例包括经由交换设备耦合在一起的多个节点。 每个节点可以包括几个处理器和高速缓存以及系统存储器块。 从一个节点到另一个节点的所有业务通过交换设备进行。 交换设备包括一个窥探过滤器,其跟踪计算机系统中所有高速缓存的高速缓存行一致性信息。 监听过滤器具有足够的条目来跟踪所有系统节点中所有高速缓存中所有条目的标签和状态信息。 除了标签和状态信息之外,窥探过滤器存储指示哪个节点具有每个高速缓存行的副本的信息。 窥探过滤器部分地用于在不包含主体高速缓存行的副本的节点处执行窥探事务,从而减少系统开销,减少跨系统互连总线的流量,并减少执行窥探所需的时间量 交易。
    • 79. 发明授权
    • Semiconductor device and method of manufacturing thereof
    • 半导体装置及其制造方法
    • US08373204B2
    • 2013-02-12
    • US12916346
    • 2010-10-29
    • Kai ChengStefan Degroote
    • Kai ChengStefan Degroote
    • H01L27/148
    • H01L21/02389H01L21/02422H01L21/0245H01L21/02458H01L21/0254H01L21/02639H01L29/0649H01L29/2003H01L29/66477H01L29/7786
    • A semiconductor device and method of manufacturing the device is disclosed. In one aspect, the device includes a semiconductor substrate and a GaN-type layer stack on top of the semiconductor substrate. The GaN-type layer stack has at least one buffer layer, a first active layer and a second active layer. Active device regions are definable at an interface of the first and second active layer. The semiconductor substrate is present on an insulating layer and is patterned to define trenches according to a predefined pattern, which includes at least one trench underlying the active device region. The trenches extend from the insulating layer into at least one buffer layer of the GaN-type layer stack and are overgrown within the at least one buffer layer, so as to obtain that the first and the second active layer are continuous at least within the active device regions.
    • 公开了一种半导体器件及其制造方法。 一方面,该器件在半导体衬底的顶部上包​​括半导体衬底和GaN型层叠层。 GaN型层堆叠具有至少一个缓冲层,第一有源层和第二有源层。 有源器件区可以在第一和第二有源层的界面处被定义。 半导体衬底存在于绝缘层上,并被图案化以根据预定图案限定沟槽,其包括位于有源器件区域下方的至少一个沟槽。 沟槽从绝缘层延伸到GaN型层堆叠的至少一个缓冲层中,并且在至少一个缓冲层内长满,以便获得第一和第二活性层至少在活性物质内连续 设备区域。