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    • 75. 发明授权
    • Coating liquid for forming a silica-containing film with a low-dielectric constant and substrate coated with such a film
    • 用于形成具有低介电常数的含二氧化硅的膜和用这种膜涂覆的基材的涂布液
    • US06451436B1
    • 2002-09-17
    • US09577507
    • 2000-05-24
    • Michio KomatsuAkira NakashimaMiki Egami
    • Michio KomatsuAkira NakashimaMiki Egami
    • B32B904
    • H01L21/3122C09D183/04H01L21/02126H01L21/02216H01L21/02282H01L21/02337Y10T428/31511Y10T428/31663Y10T428/31725Y10T428/31786Y10T428/31855C08L2666/02
    • A coating liquid for forming a silica-containing film with a low-dielectric constant, which enables the formation of a low-density film having a dielectric constant as low as 3 or less and being excellent not only in resistance of oxygen plasma and in process adaptation but also in adhesion to a substrate and in film strength, is provided. A substrate coated with the silica-containing film having the above characteristics, which is obtained by the use of the above coating liquid, is further provided. The coating liquid for forming a silica-containing film with a low-dielectric constant comprises a polymer composition mainly constituted by (i) a hydrolyzate of at least one alkoxysilane represented by the following formula (I) and/or at least one halogenated silane represented by the following formula (II), and (ii) a readily decomposable resin, XnSi(OR)4−n  (I) XnSiX′4−n  (II) wherein X represents a hydrogen atom, a fluorine atom, an unfluorinated or fluorinated alkyl group of 1 to 8 carbon atoms, an aryl group or a vinyl group; R represents a hydrogen atom, an alkyl group of 1 to 8 carbon atoms, an aryl group or a vinyl group; X′ represents a halogen atom; and n is an integer of 0 to 3.
    • 一种用于形成具有低介电常数的含二氧化硅的膜的涂布液,其能够形成介电常数低至3或更低的低密度膜,并且不仅具有优异的氧等离子体的电阻和过程 提供适应性,但也适用于对基材的粘合性和膜强度。 进一步提供了通过使用上述涂布液而获得的具有上述特性的含二氧化硅膜的基材。 用于形成具有低介电常数的含二氧化硅膜的涂布液包括主要由(i)由下式(I)表示的至少一种烷氧基硅烷的水解产物和/或至少一种卤代硅烷代表的聚合物组合物 通过下式(II)和(ii)易分解性树脂,其中X表示氢原子,氟原子,1至8个碳原子的未氟化或氟化烷基,芳基或乙烯基; R表示氢原子,1〜8个碳原子的烷基,芳基或乙烯基; X'表示卤原子; n为0〜3的整数。
    • 76. 发明授权
    • Thin film-forming method and thin film-forming apparatus therefor
    • 薄膜形成方法及其薄膜形成装置
    • US6086699A
    • 2000-07-11
    • US79112
    • 1998-05-14
    • Akira NakashimaAtsushi TonaiRyo MuraguchiMichio KomatsuKatsuyuki MachidaHakaru KyuragiKazuo Imai
    • Akira NakashimaAtsushi TonaiRyo MuraguchiMichio KomatsuKatsuyuki MachidaHakaru KyuragiKazuo Imai
    • H01L21/3205B05D1/28H01L21/00H01L21/31H01L21/316H01L21/768B32B33/00B05D5/00B05D7/24B05D7/26
    • H01L21/6715B05D1/28H01L21/67132
    • Disclosed is a thin film-forming apparatus comprising a coating liquid feed means 6 for feeding a thin film-forming coating liquid onto a surface of a transfer roll 2, a transfer means 4 including the transfer roll 2 a surface of which is coated with the thin film-forming coating liquid fed from the coating liquid feed means to form a transfer thin film 8, and a substrate conveying means 16 for continuously conveying a substrate 9 under the transfer roll, a surface of said substrate 9 to be provided with a thin film, wherein the transfer means is so fabricated that the transfer roll surface having the transfer thin film thereon is closely contacted with the surface of the substrate conveyed by the substrate conveying means, to transfer the transfer thin film formed on the transfer roll surface to the substrate surface. Also disclosed is a thin film-forming method using the thin film-forming apparatus. By the apparatus and the method, formation of a planar thin film on a substrate such as a semiconductor wafer can be carried out continuously, stably and at a low cost, and quality lowering of the thin film and property change thereof with time caused by adherence of impurities to the thin film or contamination of the thin film with impurities are avoidable. Moreover, the apparatus and the method are applicable to large-sized substrates.
    • 公开了一种薄膜形成装置,其包括用于将薄膜形成涂布液供给到转印辊2的表面上的涂布液供给装置6,包括转印辊2的转印装置4,转印辊2的表面涂覆有 从涂布液供给装置供给的薄膜形成用涂布液,形成转印薄膜8,以及用于在转印辊下连续输送基板9的基板输送机构16,所述基板9的表面设置有薄的 膜,其中转印装置被制造成使得其上具有转印薄膜的转印辊表面与由基板输送装置输送的基板的表面紧密接触,以将形成在转印辊表面上的转印薄膜转印到 基材表面。 还公开了使用该薄膜形成装置的薄膜形成方法。 通过该装置和方法,可以连续,稳定地且低成本地在诸如半导体晶片的基板上形成平面薄膜,并且随着粘附时间的推移,薄膜的质量降低及其性能变化 杂质对薄膜的污染或杂质污染薄膜是可以避免的。 此外,该装置和方法适用于大尺寸基板。