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71. 发明申请

US20050184363A1 Oxygen ion conductor device, method for fabricating oxygen ion conductor device, and oxygen concentration control system 有权
标题翻译：氧离子导体装置，氧离子导体装置的制造方法以及氧浓度控制系统
公开(公告)号：US20050184363A1
公开(公告)日：2005-08-25
申请号：US11064999
申请日：2005-02-25
申请人： Hideo Torii , Eiji Fujii , Taku Hirasawa , Atsushi Tomozawa
发明人： Hideo Torii , Eiji Fujii , Taku Hirasawa , Atsushi Tomozawa
IPC分类号： C01B13/02 , C25D1/00 , H01L21/31 , H01L23/58
CPC分类号： C01B13/0251 , C25D1/003
摘要： A first electrode thin film is formed on an upper surface of the oxygen ion conductive thin film so as to have a through hole. A resistor is formed on part of the upper surface of the oxygen conductive thin film located in the through hole. Thus, the oxygen ion conductive thin film can be directly heated by the resistor, so that oxygen ions can be speedily transferred with a low power. Therefore, the oxygen ion conductivity of the oxygen ion conductive thin film can be improved.
摘要翻译：第一电极薄膜形成在氧离子传导性薄膜的上表面上以具有通孔。在位于通孔中的导电薄膜的上表面的一部分上形成电阻器。因此，可以通过电阻器直接加热氧离子传导性薄膜，能够以低功率快速地转移氧离子。因此，能够提高氧离子传导性薄膜的氧离子传导性。

72. 发明申请

US20050168535A1 Ink-jet head production method and ink-jet recorder 失效
标题翻译：喷墨头生产方法和喷墨记录仪
公开(公告)号：US20050168535A1
公开(公告)日：2005-08-04
申请号：US10506750
申请日：2003-12-08
申请人： Taku Hirasawa , Akiko Murata , Eiji Fujii , Hideo Torii , Tohru Nakagawa
发明人： Taku Hirasawa , Akiko Murata , Eiji Fujii , Hideo Torii , Tohru Nakagawa
IPC分类号： B41J2/16 , B41J2/045
CPC分类号： B41J2/161 , B41J2/1623 , B41J2/1628 , B41J2/1632 , B41J2/1635 , B41J2/1643 , B41J2/1646 , Y10S29/016 , Y10S29/019 , Y10T29/42 , Y10T29/49155 , Y10T29/49401
摘要： First, a first electrode layer 4, a piezoelectric layer 5, a second electrode layer 6 and an oscillation layer 7 are stacked in this order over one surface of a silicon substrate 1. Next, an ink chamber partition 8 and a nozzle plate 11 are stacked over the oscillation layer 7. Subsequently, the silicon substrate 1 is ground away to a predetermined thickness from a surface thereof opposite to the first electrode layer 4, and then a remnant silicon substrate 13 is dry etched away. Thereafter, the first electrode layer 4 is patterned to form a plurality of inkjet mechanisms 2, 2, . . . . Finally, the plurality of inkjet mechanisms 2, 2, . . . are divided to simultaneously fabricate a plurality of inkjet heads 3, 3, . . . .
摘要翻译：首先，在硅衬底1的一个表面上依次堆叠第一电极层4，压电层5，第二电极层6和振荡层7。接下来，在振荡层7上层叠墨水室隔板8和喷嘴板11。随后，从与第一电极层4相反的表面将硅衬底1磨去预定厚度，然后将残余硅衬底13干蚀刻掉。此后，对第一电极层4进行图案化以形成多个喷墨机构2,2。。。。最后，多个喷墨机构2，2。。。被分割成同时制造多个喷墨头3，3。。。。

73. 发明申请

US20050146772A1 Piezoelectric element, method for fabricating the same, inkjet head, method for fabricating the same, and inkjet recording apparatus 有权
标题翻译：压电元件，其制造方法，喷墨头，其制造方法和喷墨记录装置
公开(公告)号：US20050146772A1
公开(公告)日：2005-07-07
申请号：US10997143
申请日：2004-11-24
申请人： Akiko Murata , Eiji Fujii , Hideo Torii
发明人： Akiko Murata , Eiji Fujii , Hideo Torii
IPC分类号： B41J2/14 , G02B26/00
CPC分类号： B41J2/14233 , B41J2/14282 , B41J2202/03 , H01L41/0815 , H01L41/094 , H01L41/0973 , H01L41/1876 , H01L41/316
摘要： A piezoelectric element includes a first electrode film; a piezoelectric layered film including a first piezoelectric thin film formed on the first electrode film and a second piezoelectric thin film formed on the first piezoelectric thin film; and a second electrode film formed on the second piezoelectric thin film. Each of the first and second piezoelectric thin films is an aggregate of columnar grains grown unidirectionally along the thickness direction of the piezoelectric layered film. The Pb content of the first piezoelectric thin film is smaller than the Pb content of the second piezoelectric thin film. A columnar grain of the second piezoelectric thin film has a larger average cross-sectional diameter than an average cross-sectional diameter of a columnar grain of the first piezoelectric thin film. A ratio of the thickness of the piezoelectric layered film to the average cross-sectional diameter of the second piezoelectric thin film is not less than 20 and not more than 60.
摘要翻译：压电元件包括第一电极膜; 压电层叠膜，包括形成在第一电极膜上的第一压电薄膜和形成在第一压电薄膜上的第二压电薄膜; 以及形成在第二压电薄膜上的第二电极膜。第一和第二压电薄膜中的每一个是沿着压电层叠膜的厚度方向单向生长的柱状晶粒的集合体。第一压电薄膜的Pb含量小于第二压电薄膜的Pb含量。第二压电薄膜的柱状晶粒的平均截面直径大于第一压电薄膜的柱状晶粒的平均截面直径。压电层叠膜的厚度与第二压电薄膜的平均截面直径的比率不小于20并且不大于60。

74. 发明申请

US20050127795A1 Piezoelectric element, fabrication method for the same, and inkjet head, inkjet recording apparatus and angular velocity sensor including the same 有权
标题翻译：压电元件，其制造方法以及喷墨头，喷墨记录装置和包括该压电元件的角速度传感器
公开(公告)号：US20050127795A1
公开(公告)日：2005-06-16
申请号：US10894474
申请日：2004-07-19
申请人： Hideo Torii , Eiji Fujii , Takeshi Kamada , Satoru Fujii
发明人： Hideo Torii , Eiji Fujii , Takeshi Kamada , Satoru Fujii
IPC分类号： B41J2/045 , B41J2/055 , B41J2/135 , B41J2/14 , B41J2/16 , G01C19/56 , G01C19/5628 , H01L29/84 , H01L41/08 , H01L41/09 , H01L41/18 , H01L41/22 , H01L41/29 , H01L41/316 , H01L41/319 , H01L41/39 , H02N2/00
CPC分类号： C04B35/472 , B41J2/14233 , C04B2235/3206 , C04B2235/3213 , C04B2235/3227 , C04B2235/3262 , C04B2235/787 , G01C19/5621 , G01C19/5628 , H01L41/0815 , H01L41/094 , H01L41/0973 , H01L41/1876 , H01L41/316
摘要： A piezoelectric element includes a first electrode; a piezoelectric layered film composed of a first piezoelectric film formed on the first electrode film and a second piezoelectric film that is formed on the first piezoelectric film and is controlled in crystal orientation thereof by the first piezoelectric film; and a second electrode film formed on the second piezoelectric film. Each of the first and second piezoelectric films is an aggregate of columnar grains grown unidirectionally along a thickness direction of the piezoelectric layered film. A columnar grain of the second piezoelectric film has a larger cross-sectional diameter than a columnar grain of the first piezoelectric film. A ratio l/d of the thickness l of the piezoelectric layered film to the cross-sectional diameter d of the second piezoelectric film is not less than 20 and not more than 60.
摘要翻译：压电元件包括第一电极; 压电层叠膜，由形成在第一电极膜上的第一压电膜和形成在第一压电膜上的第一压电膜组成，并由第一压电膜控制晶体取向; 以及形成在第二压电膜上的第二电极膜。第一和第二压电膜中的每一个是沿着压电层叠膜的厚度方向单向生长的柱状颗粒的集合体。第二压电膜的柱状晶粒的截面直径比第一压电膜的柱状晶粒大。压电体层叠膜的厚度l与第二压电体膜的截面直径d的比l / d为20以上60以下。

75. 发明申请

US20050101085A1 Semiconductor device and method for fabricating the same 失效
标题翻译：半导体装置及其制造方法
公开(公告)号：US20050101085A1
公开(公告)日：2005-05-12
申请号：US10999977
申请日：2004-12-01
申请人： Toyoji Ito , Eiji Fujii
发明人： Toyoji Ito , Eiji Fujii
IPC分类号： H01L27/105 , H01L21/02 , H01L21/8242 , H01L21/8246 , H01L27/108
CPC分类号： H01L28/91 , H01L27/10817 , H01L27/10852 , H01L27/10855 , H01L27/11502 , H01L27/11507 , H01L28/55 , H01L28/60 , H01L28/75
摘要： A semiconductor device includes: a conductive plug formed through an insulating film; a conductive oxygen barrier film formed on the insulating film so as to be electrically connected to the conductive plug and to cover the conductive plug; a lower electrode formed on the oxygen barrier film and connected to the oxygen barrier film; a capacitive insulating film formed on the lower electrode, following the lower electrode; and an upper electrode formed on the capacitive insulating film, following the capacitive insulating film. The capacitive insulating film has a bent portion that extends along the direction in which the conductive plug penetrates through the insulating film.
摘要翻译：半导体器件包括：通过绝缘膜形成的导电插塞; 形成在所述绝缘膜上的导电氧阻隔膜，以电连接到所述导电插塞并覆盖所述导电插塞; 形成在氧阻隔膜上并与氧阻隔膜连接的下电极; 形成在下电极上的电容绝缘膜，跟随下电极; 以及形成在电容绝缘膜上的上电极，跟随电容绝缘膜。电容绝缘膜具有沿着导电插塞穿过绝缘膜的方向延伸的弯曲部分。

76. 发明申请

US20050087689A1 Pyroelectric device, method for manufacturing same and infrared sensor 审中-公开
标题翻译：热电装置，制造方法和红外传感器
公开(公告)号：US20050087689A1
公开(公告)日：2005-04-28
申请号：US10503328
申请日：2003-12-04
申请人： Atsushi Tomozawa , Satoru Fujii , Eiji Fujii , Hideo Torii , Ryoichi Takayama
发明人： Atsushi Tomozawa , Satoru Fujii , Eiji Fujii , Hideo Torii , Ryoichi Takayama
IPC分类号： G01J5/34 , H01L37/02 , G01J5/00
CPC分类号： G01J5/34 , H01L37/025
摘要： A first electrode layer made of a noble metal containing at least one additive selected from the group consisting of Ti, Co, Ni, Mg, Fe, Ca, Sr, Mn, Ba and Al and oxides thereof, a pyroelectric layer having a thickness of 0.5 to 5 μm and having a perovskite crystalline structure whose chemical composition is represented as (Pb(1-y)Lay)Ti(1-y/4)O3 (0
摘要翻译：由含有选自Ti，Co，Ni，Mg，Fe，Ca，Sr，Mn，Ba和Al中的至少一种添加剂的贵金属制成的第一电极层及其氧化物，其厚度为 0.5〜5μm，具有钙化晶体结构，其化学组成表示为（Pb（1-y）La y）Ti（1-y / 4））O 3（0

77. 发明授权

US06174822B1 Semiconductor device and method for fabricating the same 失效
标题翻译：半导体装置及其制造方法
公开(公告)号：US06174822B1
公开(公告)日：2001-01-16
申请号：US09175250
申请日：1998-10-20
申请人： Yoshihisa Nagano , Toshie Kutsunai , Yuji Judai , Yasuhiro Uemoto , Eiji Fujii
发明人： Yoshihisa Nagano , Toshie Kutsunai , Yuji Judai , Yasuhiro Uemoto , Eiji Fujii
IPC分类号： H01L2131
CPC分类号： H01L27/1085 , H01L21/76895 , H01L23/5223 , H01L28/55 , H01L2924/0002 , H01L2924/00
摘要： A semiconductor device includes: a capacitor provided on a supporting substrate having an integrated circuit thereon and including a lower electrode, a dielectric film, and an upper electrode; a first interlayer insulating film provided so as to cover the capacitor; a first interconnect selectively provided on the first interlayer insulating film and electrically connected to the integrated circuit and the capacitor through a first contact hole formed in the first interlayer insulating film; a second interlayer insulating film formed of ozone TEOS and provided so as to cover the first interconnect; a second interconnect selectively provided on the second interlayer insulating film and electrically connected to the first interconnect through a second contact hole formed in the second interlayer insulating film; and a passivation layer provided so as to cover the second interconnect.
摘要翻译：半导体器件包括：设置在其上具有集成电路的支撑衬底上并包括下电极，电介质膜和上电极的电容器; 设置为覆盖电容器的第一层间绝缘膜; 选择性地设置在所述第一层间绝缘膜上并通过形成在所述第一层间绝缘膜中的第一接触孔与所述集成电路和所述电容器电连接的第一互连; 由臭氧TEOS形成的第二层间绝缘膜，并设置为覆盖第一互连; 选择性地设置在第二层间绝缘膜上并通过形成在第二层间绝缘膜中的第二接触孔电连接到第一互连的第二互连; 以及设置成覆盖第二互连的钝化层。

78. 发明授权

US5712001A Chemical vapor deposition process for producing oxide thin films 失效
标题翻译：用于生产氧化物薄膜的化学气相沉积工艺
公开(公告)号：US5712001A
公开(公告)日：1998-01-27
申请号：US619076
申请日：1996-03-20
申请人： Eiji Fujii , Atsushi Tomozawa , Hideo Torii , Ryoichi Takayama
发明人： Eiji Fujii , Atsushi Tomozawa , Hideo Torii , Ryoichi Takayama
IPC分类号： C30B25/10 , C23C16/40 , C23C16/455 , C23C16/50 , C23C16/509 , C30B25/16 , B05D3/06
CPC分类号： C23C16/45561 , C23C16/406 , C23C16/455 , C23C16/5096
摘要： The present invention relates to a process for producing crystallographic oriented oxide thin films having an NaCl-type structure, a spinel structure or a Wurtzite structure used as a buffer layer to obtain a functional oxide thin film such as a superconductive oxide thin film and a ferroelectric thin film, and a chemical vapor deposition apparatus used therefor. A rotatable substrate holder is provided in a reaction chamber. The substrate holder, which holds substrates thereunder, includes a substrate heater. The substrate holder is grounded to provide an electrode. Another electrode, which is connected to a high frequency power source, is located opposing the substrate holder in the reaction chamber. At a side wall of the reaction chamber, an exhaust is arranged. In a plasma electric discharge area formed between the substrate holder and the electrode, a material gas supplier is located, having a predetermined tilt angle .theta. with respect to the substrate holder.
摘要翻译：本发明涉及一种制备具有NaCl型结构，尖晶石结构或纤锌矿结构的晶体取向氧化物薄膜的方法，该结构用作缓冲层以获得诸如超导氧化物薄膜和铁电体之类的功能氧化物薄膜薄膜和用于其的化学气相沉积设备。可旋转的基板保持器设置在反应室中。保持基板的基板支架包括基板加热器。衬底保持器接地以提供电极。连接到高频电源的另一个电极与反应室中的衬底保持器相对定位。在反应室的侧壁处布置排气。在形成在基板支架和电极之间的等离子体放电区域中，相对于基板支架具有预定的倾斜角度θ的材料气体供应器。

79. 发明授权

US5663089A Method for producing a laminated thin film capacitor 失效
标题翻译：叠层薄膜电容器的制造方法
公开(公告)号：US5663089A
公开(公告)日：1997-09-02
申请号：US465350
申请日：1995-06-05
申请人： Atsushi Tomozawa , Eiji Fujii , Hideo Torii , Masumi Hattori , Satoru Fujii , Ryoichi Takayama
发明人： Atsushi Tomozawa , Eiji Fujii , Hideo Torii , Masumi Hattori , Satoru Fujii , Ryoichi Takayama
IPC分类号： H01G4/30 , H01L21/70
CPC分类号： H01G4/306
摘要： A laminated thin film capacitor having a substrate, at least two electrode layers, at least one dielectric layer and a pair of external electrode which are placed on respective side walls of the capacitor, wherein the metal electrode layer and the dielectric layers are laminated alternately on the substrate, and every other metal electrode layers are exposed on each of side walls of the capacitor, which capacitor is excellent in dielectric properties such as a high capacity per unit volume.
摘要翻译：一种叠层薄膜电容器，其具有基板，至少两个电极层，至少一个电介质层和一对外部电极，所述至少一个电介质层和一对外部电极被放置在所述电容器的相应侧壁上，其中所述金属电极层和所述电介质层交替层叠在基板和每个其他金属电极层暴露在电容器的每个侧壁上，该电容器具有优异的介电特性，例如每单位体积的高容量。

80. 发明授权

US5652171A Method of manufacturing semiconductor device having capacitor 失效
标题翻译：制造具有电容器的半导体器件的方法
公开(公告)号：US5652171A
公开(公告)日：1997-07-29
申请号：US594945
申请日：1996-01-31
申请人： Yoshihisa Nagano , Eiji Fujii
发明人： Yoshihisa Nagano , Eiji Fujii
IPC分类号： H01L21/302 , H01L21/02 , H01L21/3065 , H01L21/3213 , H01L21/822 , H01L21/8242 , H01L21/8246 , H01L27/04 , H01L27/105 , H01L27/108 , H01L21/70 , H01L27/00
CPC分类号： H01L21/02071 , H01L21/32136 , H01L28/60 , H01L28/65
摘要： A platinum bottom electrode film, a dielectric film composed of a high permittivity dielectric material or a ferroelectric material, and a platinum top electrode film are formed on a substrate on which circuit elements and wiring are formed, and the platinum top electrode film and the dielectric film are selectively dry-etched by using etching gas containing chlorine, then plasma generated by discharging gas containing fluorine is irradiated. By this method of manufacturing a semiconductor device including a capacitor, there is almost no residual chlorine, and hence erosion of the dielectric film by residual chlorine is prevented.
摘要翻译：在其上形成有电路元件和布线的基板上形成铂底部电极膜，由介电常数高的电介质材料或铁电体材料构成的电介质膜和铂电极膜，并且铂顶部电极膜和电介质通过使用含有氯的蚀刻气体选择性地干蚀刻膜，然后照射通过排出含氟气体产生的等离子体。通过这种制造包括电容器的半导体器件的方法，几乎没有残留的氯，因此防止了由残留氯引起的电介质膜的腐蚀。

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