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71. 发明授权

US07629644B2 Insulated gate-type semiconductor device and manufacturing method of the same 有权
标题翻译：绝缘栅型半导体器件及其制造方法
公开(公告)号：US07629644B2
公开(公告)日：2009-12-08
申请号：US11023961
申请日：2004-12-29
申请人： Masahito Onda , Hirotoshi Kubo , Shouji Miyahara , Hiroyasu Ishida , Hiroaki Saito
发明人： Masahito Onda , Hirotoshi Kubo , Shouji Miyahara , Hiroyasu Ishida , Hiroaki Saito
IPC分类号： H01L29/76
CPC分类号： H01L29/7813 , H01L21/26586 , H01L29/0869 , H01L29/4236 , H01L29/66727 , H01L29/66734
摘要： An interlayer dielectric film is completely buried in a trench, and failures caused by step coverage is prevented because a source electrode can be formed substantially uniformly on an upper portion of a gate electrode. Also, in the processes of forming a source region, a body region and an interlayer dielectric film, only one mask is necessary so that the device size is reduced to account for placement error of only one mask alignment.
摘要翻译：层间电介质膜被完全埋入沟槽中，由于可以在栅电极的上部基本上均匀地形成源电极，所以防止由台阶覆盖引起的故障。此外，在形成源极区域，体区域和层间电介质膜的过程中，仅需要一个掩模，使得器件尺寸减小以仅考虑一个掩模对准的放置误差。

72. 发明授权

US07550135B2 Composition for external application 有权
公开(公告)号：US07550135B2
公开(公告)日：2009-06-23
申请号：US10967481
申请日：2004-10-19
申请人： Masahide Hoshino , Hiroaki Saito , Yoshiya Sugai , Mituru Sugiyama , Yoshinori Nishizawa , Yasushi Katayama
发明人： Masahide Hoshino , Hiroaki Saito , Yoshiya Sugai , Mituru Sugiyama , Yoshinori Nishizawa , Yasushi Katayama
IPC分类号： A61K8/88
CPC分类号： A61Q5/00 , A61K8/42 , A61Q5/02 , A61Q17/00 , A61Q17/04 , A61Q19/00 , A61Q19/007
摘要： The present invention relates to a composition for external application, a humectant and a skin barrier function reinforcing agent, each containing a diamide derivative represented by the following formula (1): (wherein, R1a and R1b are the same or different and each represents a C1-23 hydrocarbon group, R2a and R2b are the same or different and each represents a divalent C1-6 hydrocarbon group, R3s are the same or different and each represents a divalent C2-6 hydrocarbon group and n stands for 1 to 100). The composition for external application, humectant and skin barrier function reinforcing agent basically improve the water retaining ability and barrier functions of the horny layer, are excellent in miscibility and mixing stability and can be prepared efficiently at a low cost.

73. 发明授权

US07521306B2 Semiconductor device and a method of fabricating the same 有权
公开(公告)号：US07521306B2
公开(公告)日：2009-04-21
申请号：US11194446
申请日：2005-08-02
申请人： Hirotoshi Kubo , Masanao Kitagawa , Masahito Onda , Hiroaki Saito , Eiichiroh Kuwako
发明人： Hirotoshi Kubo , Masanao Kitagawa , Masahito Onda , Hiroaki Saito , Eiichiroh Kuwako
IPC分类号： H01L21/336
CPC分类号： H01L29/7802 , H01L29/1095 , H01L29/41766 , H01L29/4236 , H01L29/66719 , H01L29/66727 , H01L29/66734 , H01L29/7813
摘要： A power MOSFET comprises: a semiconductor substrate 21 of a first conduction type; a drain layer 22 of the first conduction type and formed on a surface layer of the substrate; a gate insulating film 25 formed in a partial region on the drain layer 22; a gate electrode 26 formed on the gate insulating film 25; an insulating film 27 formed on the gate electrode; a side wall insulator 28 formed on side walls of the gate insulating film 25, the gate electrode 26, and the insulating film 27; a recess formed on the drain layer 22 and in a region other than a region where the gate electrode 25 and the side wall insulator 28 are formed; a channel layer 23 of a second conduction type opposite to the first conduction type and formed in a range from the region where the recess is formed to a vicinity of the region where the gate electrode 26 is formed; a source region layer 24 of the one conduction type and formed on the channel layer 23 outside the recess; and a wiring layer 29 formed to cover the channel layer 23 which is exposed through the recess, the side wall insulator 28, and the insulating film.

74. 发明授权

US07399999B2 Semiconductor device 有权
标题翻译：半导体器件
公开(公告)号：US07399999B2
公开(公告)日：2008-07-15
申请号：US10958640
申请日：2004-10-06
申请人： Tetsuya Yoshida , Tetsuya Okada , Hiroaki Saito , Shigeyuki Murai , Kikuo Okada
发明人： Tetsuya Yoshida , Tetsuya Okada , Hiroaki Saito , Shigeyuki Murai , Kikuo Okada
IPC分类号： H01L29/06
CPC分类号： H01L29/7397 , H01L29/0619
摘要： In a conventional semiconductor device, there was a problem that, in a guard ring region, a shape of a depletion layer is distorted and stable withstand voltage characteristics cannot be obtained. In a semiconductor device of the present invention, a thermal oxide film in an actual operation region and a thermal oxide film in a guard ring region are formed in the same process. Thereafter, the thermal oxide film is once removed and is formed again. Thus, a film thickness of the thermal oxide film on the upper surface of the guard ring region is set to, for example, about 8000 to 10000 Å. Accordingly, a CVD oxide film including moving ions is formed in a position distant from a surface of an epitaxial layer. Consequently, distortion of a depletion layer, which is influenced by the moving ions, is suppressed and desired withstand voltage characteristics can be maintained.
摘要翻译：在传统的半导体器件中，存在在保护环区域中耗尽层的形状变形而不能得到稳定的耐电压特性的问题。在本发明的半导体装置中，以相同的工序形成实际工作区域中的热氧化膜和防护环区域的热氧化膜。此后，热氧化膜被一次除去并再次形成。因此，保护环区域的上表面上的热氧化膜的膜厚设定为例如约8000〜10000。因此，包含移动离子的CVD氧化膜形成在远离外延层的表面的位置。因此，受到移动离子影响的耗尽层的失真被抑制，并且可以保持期望的耐受电压特性。

75. 发明授权

US07365940B2 Hard disk drive device, and fluid dynamic bearing spindle motor and assembling method thereof 失效
标题翻译：硬盘驱动装置和流体动力轴承主轴电动机及其组装方法
公开(公告)号：US07365940B2
公开(公告)日：2008-04-29
申请号：US11167126
申请日：2005-06-28
申请人： Takeyoshi Yamamoto , Yasunori Tokuno , Hiroaki Saito
发明人： Takeyoshi Yamamoto , Yasunori Tokuno , Hiroaki Saito
IPC分类号： G11B17/02 , F16C32/06 , H02K5/16 , H02K7/08
CPC分类号： G11B33/121 , F16C17/107 , F16C33/1015 , F16C2370/12 , G11B19/2018 , G11B25/043
摘要： A hydrodynamic bearing for a hard disk drive device is disclosed. An oil is filled in a clearance between an inner surface of the hub and an outer surface of the shaft, whereby a hydrodynamic radial bearing is formed between the inner periphery of the hub and the outer periphery of the shaft, and a hydrodynamic thrust bearing is formed between the top face of the shaft and the thrust plate. Between an outer peripheral part at the base end of the shaft and an inner peripheral part at the open end of the hub is formed a seal part in which a larger clearance is formed between the shaft and the hub than a clearance in the hydrodynamic radial bearing and in which the oil surface is positioned. An oil surface adjusting hole and a plug for sealing the hole are provided in the case opposite the seal part.
摘要翻译：公开了一种用于硬盘驱动装置的流体动力轴承。油被填充在毂的内表面和轴的外表面之间的间隙中，由此在轮毂的内周和轴的外周之间形成流体动力学径向轴承，并且流体动力推力轴承是形成在轴的顶面和止推板之间。在轴的基端部的外周部和轮毂的开口端的内周部之间形成有密封部，在该密封部中，在轴和轮毂之间形成比在流体动力学径向轴承中的间隙更大的间隙并且其中油表面被定位。在与密封部相对的壳体中设置油面调整孔和密封孔的塞子。

76. 发明申请

US20070024136A1 Hydrodynamic bearing device, motor, and disk driving apparatus 失效
标题翻译：流体动力轴承装置，电动机和盘驱动装置
公开(公告)号：US20070024136A1
公开(公告)日：2007-02-01
申请号：US11443175
申请日：2006-05-31
申请人： Hiroaki Saito , Hiroyuki Kiriyama , Takao Yoshitsugu , Koji Hirata
发明人： Hiroaki Saito , Hiroyuki Kiriyama , Takao Yoshitsugu , Koji Hirata
IPC分类号： H02K5/16 , F16C32/06
CPC分类号： F16C17/102 , F16C17/107 , F16C33/107 , H02K7/086
摘要： To provide a hydrodynamic bearing device with high reliability, with which reductions in size, weight, and thickness can be achieved, as well as a motor and a disk driving apparatus that make use of this hydrodynamic bearing device. The hydrodynamic bearing device pertaining to the present invention comprises a shaft 10, a thrust flange 16, a sleeve 11, a seal plate 21, and a retaining plate 20. A radial dynamic pressure bearing is formed in the radial direction gap between the shaft 10 and the sleeve 11, and a thrust dynamic pressure bearing is formed in the thrust dynamic bearing gap between the sleeve 11 and the thrust flange 16. A communicating hole 11d is formed for communicating between the gap between the sleeve 11 and the seal plate 21 and the thrust direction gap between the sleeve 11 and the thrust flange 116. The radial dynamic pressure bearing and/or the thrust dynamic pressure bearing are formed such that a lubricating oil 9 circulates in the gap between the sleeve 11 and the seal plate 21 from the inner peripheral side of the sleeve 11 toward the outer peripheral side.
摘要翻译：提供具有高可靠性的流体动力轴承装置，其可以实现尺寸，重量和厚度的减小，以及利用该流体动力轴承装置的电动机和盘驱动装置。本发明的流体动力轴承装置包括轴10，推力凸缘16，套筒11，密封板21和保持板20。径向动压轴承形成在轴10和套筒11之间的径向间隙中，并且推力动压轴承形成在套筒11和推力凸缘16之间的推力动态轴承间隙中。形成连通孔11d用于在套筒11和密封板21之间的间隙以及套筒11和推力凸缘116之间的推力方向间隙之间连通。径向动压轴承和/或推力动压轴承形成为使得润滑油9从套筒11的内周侧向外周侧在套筒11和密封板21之间的间隙中循环。

77. 发明申请

US20060255675A1 Hydrodynamic bearing device and spindle motor having the bearing device, and recording and/or reproducing apparatus using the spindle motor 失效
公开(公告)号：US20060255675A1
公开(公告)日：2006-11-16
申请号：US11407060
申请日：2006-04-20
申请人： Hiroaki Saito , Takeyoshi Yamamoto , Takao Yoshitsugu
发明人： Hiroaki Saito , Takeyoshi Yamamoto , Takao Yoshitsugu
IPC分类号： H02K5/16 , H02K7/08
CPC分类号： F16C33/107 , F16C17/107 , H02K5/1675 , H02K7/085
摘要： A set of radial dynamic pressure generating grooves constitute a radial bearing, and an entire width (L) of the radial dynamic pressure generating groove is reduced. A set of thrust dynamic pressure generating grooves constituting a thrust bearing are formed so that an area where a maximal thrust dynamic pressure is generated (diameter) is increased, and a bearing angle stiffness of the thrust bearing is increased. The thrust bearing having the high bearing angle stiffness shares a moment load applied to a shaft to thereby compensate for a bearing angle stiffness of the radial bearing whose bearing stiffness is small because an entire width of the radial bearing is small. Thus, a thin-shaped hydrodynamic bearing capable of withstanding a large moment load is obtained.

78. 发明授权

US07034376B2 Schottky barrier diode semiconductor device 有权
标题翻译：肖特基势垒二极管半导体器件
公开(公告)号：US07034376B2
公开(公告)日：2006-04-25
申请号：US10953073
申请日：2004-09-30
申请人： Tetsuya Okada , Hiroaki Saito
发明人： Tetsuya Okada , Hiroaki Saito
IPC分类号： H01L31/108
CPC分类号： H01L29/66143 , H01L29/861 , H01L29/872
摘要： A Schottky barrier diode in which a p+-type semiconductor layer is provided in an n−-type epitaxial layer can realize lowering the forward voltage VF without considering leak current IR. However, when compared with a normal Schottky barrier diode, the forward voltage VF is generally high. When a Schottky metal layer is suitably selected, although the forward voltage VF can be reduced, there is a limit in further reduction. On the other hand, when the resistivity of the n−-type semiconductor layer is reduced, although the forward voltage VF can be realized, there is a problem that breakdown voltage is deteriorated. In a semiconductor device of the invention, a second n−-type semiconductor layer having a low resistivity is laminated on a first n−-type semiconductor layer capable of securing a specified breakdown voltage. P+-type semiconductor regions are made to have depths equal to or slightly deeper than the second n−-type semiconductor layer. By this, in a Schottky barrier diode in which leak current IR can be suppressed by pinch off of a depletion layer, the forward voltage VF can be reduced and the specified breakdown voltage can be secured.
摘要翻译：其中p型+型半导体层设置在n +型超导外延层中的肖特基势垒二极管可以在不考虑漏电流IR的情况下实现降低正向电压VF。然而，当与正常肖特基势垒二极管相比时，正向电压VF通常较高。当适当地选择肖特基金属层时，尽管可以减小正向电压VF，但是进一步减少是有限制的。另一方面，当降低n +型半导体层的电阻率时，尽管可以实现正向电压VF，但存在击穿电压恶化的问题。在本发明的半导体器件中，具有低电阻率的第二n + O - 型半导体层被层叠在第一n + 击穿电压。使P + + H型半导体区域的深度等于或略深于第二n +型半导体层。由此，在可以通过耗尽层的夹断来抑制漏电流IR的肖特基势垒二极管中，可以减小正向电压VF，并且可以确保规定的击穿电压。

79. 发明申请

US20050116283A1 Semiconductor device 审中-公开
标题翻译：半导体器件
公开(公告)号：US20050116283A1
公开(公告)日：2005-06-02
申请号：US10968354
申请日：2004-10-20
申请人： Tetsuya Yoshida , Tetsuya Okada , Hiroaki Saito , Shigeyuki Murai , Kikuo Okada
发明人： Tetsuya Yoshida , Tetsuya Okada , Hiroaki Saito , Shigeyuki Murai , Kikuo Okada
IPC分类号： H01L21/28 , H01L29/417 , H01L29/423 , H01L29/49 , H01L29/76 , H01L29/78 , H01L29/80
CPC分类号： H01L29/7828 , H01L29/41741 , H01L29/4236 , H01L29/4238 , H01L29/4916
摘要： In conventional semiconductor devices, there observed a problem that cells on the devices may not function uniformly because of voltage drop in a main wiring layer due to a uniform and narrow width of the main wiring layer through which a main current flows. In a semiconductor device of the present invention, a width of one end of a main wire for carrying the main current is formed wider than a width of another end of the main wire. An overall width of the main wire is formed so as to be gradually narrowed from the one end to the another end. In this way, it is possible to reduce a difference in drive voltages between a cell located in the vicinity of an electrode pad for carrying the main current and a cell located in a remote position. Resultantly, it is possible to suppress a voltage drop in the main wire and to achieve uniform operations of cells in an element.
摘要翻译：在传统的半导体器件中，由于主电流流过的主布线层的宽度均匀而窄，主要布线层中的电压下降，存在器件的电池不能均匀地发挥作用的问题。在本发明的半导体器件中，用于承载主电流的主线的一端的宽度形成为比主线的另一端的宽度宽。主线的总宽度形成为从一端到另一端逐渐变窄。以这种方式，可以减小位于用于承载主电流的电极焊盘附近的电池与位于远程位置的电池之间的驱动电压的差异。因此，可以抑制主线中的电压降，并实现元件中的电池的均匀操作。

80. 发明授权

US5970344A Method of manufacturing semiconductor device having gate electrodes formed in trench structure before formation of source layers 有权
标题翻译：在形成源层之前制造具有在沟槽结构中形成的栅电极的半导体器件的方法
公开(公告)号：US5970344A
公开(公告)日：1999-10-19
申请号：US138617
申请日：1998-08-24
申请人： Hirotoshi Kubo , Eiichiroh Kuwako , Masanao Kitagawa , Hiroaki Saito
发明人： Hirotoshi Kubo , Eiichiroh Kuwako , Masanao Kitagawa , Hiroaki Saito
IPC分类号： H01L21/336 , H01L29/08 , H01L29/417 , H01L29/78 , H01L21/302
CPC分类号： H01L29/7813 , H01L29/0847 , H01L29/41766 , H01L29/7802
摘要： A channel layer is formed in a surface of a semiconductor substrate, and a plurality of trenches are formed in the surface of the semiconductor substrate, the trenches being deeper than the channel layer. Then, gate electrodes are formed in the trenches, respectively, after which body layers are formed between the trenches and source layers are formed adjacent to the trenches.
摘要翻译：在半导体衬底的表面中形成沟道层，并且在半导体衬底的表面中形成多个沟槽，沟槽比沟道层更深。然后，分别在沟槽中形成栅电极，之后在沟槽之间形成体层，并且与沟槽相邻地形成源极层。

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