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1. 发明申请

US20050133814A1 Semiconductor device 有权
标题翻译：半导体器件
公开(公告)号：US20050133814A1
公开(公告)日：2005-06-23
申请号：US10958640
申请日：2004-10-06
申请人： Tetsuya Yoshida , Tetsuya Okada , Hiroaki Saito , Shigeyuki Murai , Kikuo Okada
发明人： Tetsuya Yoshida , Tetsuya Okada , Hiroaki Saito , Shigeyuki Murai , Kikuo Okada
IPC分类号： H01L29/70 , H01L29/06 , H01L29/73 , H01L29/739 , H01L29/78 , H01L29/80 , H01L29/423
CPC分类号： H01L29/7397 , H01L29/0619
摘要： In a conventional semiconductor device, there was a problem that, in a guard ring region, a shape of a depletion layer is distorted and stable withstand voltage characteristics cannot be obtained. In a semiconductor device of the present invention, a thermal oxide film in an actual operation region and a thermal oxide film in a guard ring region are formed in the same process. Thereafter, the thermal oxide film is once removed and is formed again. Thus, a film thickness of the thermal oxide film on the upper surface of the guard ring region is set to, for example, about 8000 to 10000 Å. Accordingly, a CVD oxide film including moving ions is formed in a position distant from a surface of an epitaxial layer. Consequently, distortion of a depletion layer, which is influenced by the moving ions, is suppressed and desired withstand voltage characteristics can be maintained.
摘要翻译：在传统的半导体器件中，存在在保护环区域中耗尽层的形状变形而不能得到稳定的耐电压特性的问题。在本发明的半导体装置中，以相同的工序形成实际工作区域中的热氧化膜和防护环区域的热氧化膜。此后，热氧化膜被一次除去并再次形成。因此，保护环区域的上表面上的热氧化膜的膜厚设定为例如约8000〜10000。因此，包含移动离子的CVD氧化膜形成在远离外延层的表面的位置。因此，受到移动离子影响的耗尽层的失真被抑制，并且可以保持期望的耐受电压特性。

2. 发明授权

US07399999B2 Semiconductor device 有权
标题翻译：半导体器件
公开(公告)号：US07399999B2
公开(公告)日：2008-07-15
申请号：US10958640
申请日：2004-10-06
申请人： Tetsuya Yoshida , Tetsuya Okada , Hiroaki Saito , Shigeyuki Murai , Kikuo Okada
发明人： Tetsuya Yoshida , Tetsuya Okada , Hiroaki Saito , Shigeyuki Murai , Kikuo Okada
IPC分类号： H01L29/06
CPC分类号： H01L29/7397 , H01L29/0619
摘要： In a conventional semiconductor device, there was a problem that, in a guard ring region, a shape of a depletion layer is distorted and stable withstand voltage characteristics cannot be obtained. In a semiconductor device of the present invention, a thermal oxide film in an actual operation region and a thermal oxide film in a guard ring region are formed in the same process. Thereafter, the thermal oxide film is once removed and is formed again. Thus, a film thickness of the thermal oxide film on the upper surface of the guard ring region is set to, for example, about 8000 to 10000 Å. Accordingly, a CVD oxide film including moving ions is formed in a position distant from a surface of an epitaxial layer. Consequently, distortion of a depletion layer, which is influenced by the moving ions, is suppressed and desired withstand voltage characteristics can be maintained.
摘要翻译：在传统的半导体器件中，存在在保护环区域中耗尽层的形状变形而不能得到稳定的耐电压特性的问题。在本发明的半导体装置中，以相同的工序形成实际工作区域中的热氧化膜和防护环区域的热氧化膜。此后，热氧化膜被一次除去并再次形成。因此，保护环区域的上表面上的热氧化膜的膜厚设定为例如约8000〜10000。因此，包含移动离子的CVD氧化膜形成在远离外延层的表面的位置。因此，受到移动离子影响的耗尽层的失真被抑制，并且可以保持期望的耐受电压特性。

3. 发明申请

US20050116283A1 Semiconductor device 审中-公开
标题翻译：半导体器件
公开(公告)号：US20050116283A1
公开(公告)日：2005-06-02
申请号：US10968354
申请日：2004-10-20
申请人： Tetsuya Yoshida , Tetsuya Okada , Hiroaki Saito , Shigeyuki Murai , Kikuo Okada
发明人： Tetsuya Yoshida , Tetsuya Okada , Hiroaki Saito , Shigeyuki Murai , Kikuo Okada
IPC分类号： H01L21/28 , H01L29/417 , H01L29/423 , H01L29/49 , H01L29/76 , H01L29/78 , H01L29/80
CPC分类号： H01L29/7828 , H01L29/41741 , H01L29/4236 , H01L29/4238 , H01L29/4916
摘要： In conventional semiconductor devices, there observed a problem that cells on the devices may not function uniformly because of voltage drop in a main wiring layer due to a uniform and narrow width of the main wiring layer through which a main current flows. In a semiconductor device of the present invention, a width of one end of a main wire for carrying the main current is formed wider than a width of another end of the main wire. An overall width of the main wire is formed so as to be gradually narrowed from the one end to the another end. In this way, it is possible to reduce a difference in drive voltages between a cell located in the vicinity of an electrode pad for carrying the main current and a cell located in a remote position. Resultantly, it is possible to suppress a voltage drop in the main wire and to achieve uniform operations of cells in an element.
摘要翻译：在传统的半导体器件中，由于主电流流过的主布线层的宽度均匀而窄，主要布线层中的电压下降，存在器件的电池不能均匀地发挥作用的问题。在本发明的半导体器件中，用于承载主电流的主线的一端的宽度形成为比主线的另一端的宽度宽。主线的总宽度形成为从一端到另一端逐渐变窄。以这种方式，可以减小位于用于承载主电流的电极焊盘附近的电池与位于远程位置的电池之间的驱动电压的差异。因此，可以抑制主线中的电压降，并实现元件中的电池的均匀操作。

4. 发明申请

US20050139947A1 Semiconductor device 有权
标题翻译：半导体器件
公开(公告)号：US20050139947A1
公开(公告)日：2005-06-30
申请号：US10953073
申请日：2004-09-30
申请人： Tetsuya Okada , Hiroaki Saito
发明人： Tetsuya Okada , Hiroaki Saito
IPC分类号： H01L21/329 , H01L29/47 , H01L29/861 , H01L29/872
CPC分类号： H01L29/66143 , H01L29/861 , H01L29/872
摘要： A Schottky barrier diode in which a p+-type semiconductor layer is provided in an n−-type epitaxial layer can realize lowering the forward voltage VF without considering leak current IR. However, when compared with a normal Schottky barrier diode, the forward voltage VF is generally high. When a Schottky metal layer is suitably selected, although the forward voltage VF can be reduced, there is a limit in further reduction. On the other hand, when the resistivity of the n−-type semiconductor layer is reduced, although the forward voltage VF can be realized, there is a problem that breakdown voltage is deteriorated. In a semiconductor device of the invention, a second n−-type semiconductor layer having a low resistivity is laminated on a first n−-type semiconductor layer capable of securing a specified breakdown voltage. P+-type semiconductor regions are made to have depths equal to or slightly deeper than the second n−-type semiconductor layer. By this, in a Schottky barrier diode in which leak current IR can be suppressed by pinch off of a depletion layer, the forward voltage VF can be reduced and the specified breakdown voltage can be secured.
摘要翻译：其中p型+型半导体层设置在n +型超导外延层中的肖特基势垒二极管可以在不考虑漏电流IR的情况下实现降低正向电压VF。然而，当与正常肖特基势垒二极管相比时，正向电压VF通常较高。当适当地选择肖特基金属层时，尽管可以减小正向电压VF，但是进一步减少是有限制的。另一方面，当降低n +型半导体层的电阻率时，虽然可以实现正向电压VF，但存在击穿电压恶化的问题。在本发明的半导体器件中，具有低电阻率的第二n + O - 型半导体层被层叠在第一n + 击穿电压。使P + + H型半导体区域的深度等于或略深于第二n +型半导体层。由此，在可以通过耗尽层的夹断来抑制漏电流IR的肖特基势垒二极管中，可以减小正向电压VF，并且可以确保规定的击穿电压。

5. 发明申请

US20050184406A1 Semiconductor device 审中-公开
标题翻译：半导体器件
公开(公告)号：US20050184406A1
公开(公告)日：2005-08-25
申请号：US11061730
申请日：2005-02-22
申请人： Tetsuya Okada , Hiroaki Saito
发明人： Tetsuya Okada , Hiroaki Saito
IPC分类号： H01L29/872 , H01L29/47 , H01L29/861 , H01L31/062
CPC分类号： H01L29/872 , H01L29/861
摘要： Conventionally, VF and IR characteristics of a Schottky barrier diode are in a tradeoff relation and there is a problem in that an increase in a leak current is unavoidable in order to realize a reduction in VF. To solve the problem, p type semiconductor regions of a pillar shape reaching an n+ type semiconductor substrate are provided in an n− type semiconductor layer. When a reverse voltage is applied, a depletion layer expanding in a substrate horizontal direction from the p type semiconductor regions fills the n− type semiconductor layer. Thus, it is possible to prevent the leak current generated on a Schottky junction interface from leaking to a cathode side. Since an impurity concentration of the n− type semiconductor layer can be increased to a degree at which the depletion layer expanding from the p type semiconductor regions adjacent to each other can be pinched off, it is possible to realize a reduction in VF and it is possible to secure a predetermined breakdown voltage if only the depletion layer is pinched off.
摘要翻译：通常，肖特基势垒二极管的VF和IR特性是权衡关系的，并且存在为了实现VF的降低而不可避免地增加泄漏电流的问题。为了解决这个问题，在n型半导体层中设置了到n +型半导体衬底的柱状的p型半导体区域。当施加反向电压时，从p型半导体区域沿衬底水平方向膨胀的耗尽层填充n型半导体层。因此，可以防止在肖特基结界面上产生的泄漏电流泄漏到阴极侧。由于可以将n型半导体层的杂质浓度提高到从相邻的p型半导体区域扩大的耗尽层被夹除的程度，所以可以实现VF的降低，如果只有耗尽层被夹掉，则可以确保预定的击穿电压。

6. 发明授权

US07034376B2 Schottky barrier diode semiconductor device 有权
标题翻译：肖特基势垒二极管半导体器件
公开(公告)号：US07034376B2
公开(公告)日：2006-04-25
申请号：US10953073
申请日：2004-09-30
申请人： Tetsuya Okada , Hiroaki Saito
发明人： Tetsuya Okada , Hiroaki Saito
IPC分类号： H01L31/108
CPC分类号： H01L29/66143 , H01L29/861 , H01L29/872
摘要： A Schottky barrier diode in which a p+-type semiconductor layer is provided in an n−-type epitaxial layer can realize lowering the forward voltage VF without considering leak current IR. However, when compared with a normal Schottky barrier diode, the forward voltage VF is generally high. When a Schottky metal layer is suitably selected, although the forward voltage VF can be reduced, there is a limit in further reduction. On the other hand, when the resistivity of the n−-type semiconductor layer is reduced, although the forward voltage VF can be realized, there is a problem that breakdown voltage is deteriorated. In a semiconductor device of the invention, a second n−-type semiconductor layer having a low resistivity is laminated on a first n−-type semiconductor layer capable of securing a specified breakdown voltage. P+-type semiconductor regions are made to have depths equal to or slightly deeper than the second n−-type semiconductor layer. By this, in a Schottky barrier diode in which leak current IR can be suppressed by pinch off of a depletion layer, the forward voltage VF can be reduced and the specified breakdown voltage can be secured.
摘要翻译：其中p型+型半导体层设置在n +型超导外延层中的肖特基势垒二极管可以在不考虑漏电流IR的情况下实现降低正向电压VF。然而，当与正常肖特基势垒二极管相比时，正向电压VF通常较高。当适当地选择肖特基金属层时，尽管可以减小正向电压VF，但是进一步减少是有限制的。另一方面，当降低n +型半导体层的电阻率时，尽管可以实现正向电压VF，但存在击穿电压恶化的问题。在本发明的半导体器件中，具有低电阻率的第二n + O - 型半导体层被层叠在第一n + 击穿电压。使P + + H型半导体区域的深度等于或略深于第二n +型半导体层。由此，在可以通过耗尽层的夹断来抑制漏电流IR的肖特基势垒二极管中，可以减小正向电压VF，并且可以确保规定的击穿电压。

7. 发明授权

US07589934B2 Hydrodynamic bearing device and disk rotating apparatus 失效
标题翻译：流体动力轴承装置和盘旋转装置
公开(公告)号：US07589934B2
公开(公告)日：2009-09-15
申请号：US12188545
申请日：2008-08-08
申请人： Takafumi Asada , Hiroaki Saito , Takao Yoshitsugu , Keigo Kusaka , Hiroyuki Kiriyama , Daisuke Ito
发明人： Takafumi Asada , Hiroaki Saito , Takao Yoshitsugu , Keigo Kusaka , Hiroyuki Kiriyama , Daisuke Ito
IPC分类号： G11B19/20
CPC分类号： F16C17/107 , F16C33/103 , F16C33/107 , F16C2370/12
摘要： In a hydrodynamic bearing device in which a radial bearing face having a dynamic pressure generating groove on a shaft or an inner periphery of a sleeve is provided and a clearance between the shaft and the sleeve is filled with lubricant, an annular depression is provided on one end face of the sleeve adjacent to a rotor hub and a cover plate for covering the depression is attached to the sleeve so as to define a reservoir for the lubricant or air for the purpose of preventing such a risk that absence of an oil film occurs in clearances of a bearing of the hydrodynamic bearing device due to outflow of oil upon forcing of the oil by air received into the bearing. A step portion is provided on the other end face of the sleeve such that the step portion and the reservoir are communicated with each other by a communication hole. During operation of the hydrodynamic bearing device, air in the hydrodynamic bearing device reaches the reservoir via the communication hole so as to be discharged from the reservoir.
摘要翻译：在一种流体动力轴承装置中，其中设置有在轴上的动压产生槽或套筒的内周上的径向支承面，并且轴与套筒之间的间隙充满润滑剂，环形凹部设置在一个与转子轮毂相邻的套筒的端面和用于覆盖凹部的盖板附接到套筒上，以便限定用于润滑剂或空气的储存器，以便防止在油膜中不存在油膜的风险由于在接收到轴承中的空气迫使油被油流出时，流体动力轴承装置的轴承的间隙。台阶部设置在套筒的另一端面上，使得台阶部分和储存器通过连通孔相互连通。在流体动力轴承装置的操作期间，流体动力轴承装置中的空气经由连通孔到达储存器，以便从储存器排出。

8. 发明申请

US20090154852A1 HYDRODYNAMIC BEARING DEVICE, SPINDLE MOTOR, AND INFORMATION RECORDING AND REPRODUCING APPARATUS 审中-公开
标题翻译：水力发电轴承装置，主轴电机，信息记录和再生装置
公开(公告)号：US20090154852A1
公开(公告)日：2009-06-18
申请号：US12333903
申请日：2008-12-12
申请人： Takafumi ASADA , Hiroaki Saito , Daisuke Ito
发明人： Takafumi ASADA , Hiroaki Saito , Daisuke Ito
IPC分类号： F16C32/06
CPC分类号： G11B19/2036 , F16C17/045 , F16C33/103 , F16C33/107 , F16C2370/12
摘要： The hydrodynamic bearing device comprises a sleeve 1, a shaft 2, a thrust bearing portion, and a lubricating fluid 5. The sleeve 1 has a bearing hole 1C. The shaft 2 is inserted into the bearing hole 1C in a state of being able to rotate relative to the sleeve 1. The thrust bearing portion has a hydrodynamic groove for generating pressure in the axial direction. The lubricating fluid 5 is held in a gap formed by the thrust bearing portion. The hydrodynamic bearing device is further constituted so that the value of a wear amount function F6 falls into a specific range. With the hydrodynamic bearing device, the required bearing performance can be satisfied, and the thrust bearing portion has a longer intermittent service life.
摘要翻译：流体动力轴承装置包括套筒1，轴2，推力轴承部分和润滑流体5.套筒1具有轴承孔1C。轴2在能够相对于套筒1旋转的状态下插入到轴承孔1C中。推力轴承部分具有用于在轴向方向产生压力的流体动力槽。润滑流体5保持在由止推轴承部形成的间隙中。流体动力轴承装置进一步构成为使磨损量函数F6的值落入特定范围。使用流体动力轴承装置，可以满足所需的轴承性能，推力轴承部分具有较长的间歇使用寿命。

9. 发明授权

US07492548B2 Hydrodynamic bearing device and disk rotating apparatus 有权
公开(公告)号：US07492548B2
公开(公告)日：2009-02-17
申请号：US10554473
申请日：2004-04-13
申请人： Takafumi Asada , Hiroaki Saito , Takao Yoshitsugu , Keigo Kusaka , Hiroyuki Kiriyama , Daisuke Ito
发明人： Takafumi Asada , Hiroaki Saito , Takao Yoshitsugu , Keigo Kusaka , Hiroyuki Kiriyama , Daisuke Ito
IPC分类号： G11B17/02
CPC分类号： F16C17/107 , F16C33/103 , F16C33/107 , F16C2370/12
摘要： In a hydrodynamic bearing device in which a radial bearing face having a dynamic pressure generating groove on a shaft or an inner periphery of a sleeve is provided and a clearance between the shaft and the sleeve is filled with lubricant, an annular depression is provided on one end face of the sleeve adjacent to a rotor hub and a cover plate for covering the depression is attached to the sleeve so as to define a reservoir for the lubricant or air for the purpose of preventing such a risk that absence of an oil film occurs in clearances of a bearing of the hydrodynamic bearing device due to outflow of oil upon forcing of the oil by air received into the bearing. A step portion is provided on the other end face of the sleeve such that the step portion and the reservoir are communicated with each other by a communication hole. During operation of the hydrodynamic bearing device, air in the hydrodynamic bearing device reaches the reservoir via the communication hole so as to be discharged from the reservoir.

10. 发明申请

US20080080797A1 Hydrodynamic bearing type rotary device and recording and reproducing apparatus equipped with same 有权
标题翻译：流体动力轴承式旋转装置和配备有该装置的记录和再现装置
公开(公告)号：US20080080797A1
公开(公告)日：2008-04-03
申请号：US11905354
申请日：2007-09-28
申请人： Takafumi Asada , Hiroaki Saito , Daisuke Ito
发明人： Takafumi Asada , Hiroaki Saito , Daisuke Ito
IPC分类号： F16C32/06 , G11B5/52
CPC分类号： F16C17/107 , F16C33/107 , F16C33/1085 , F16C33/745 , F16C2370/12 , G11B19/2036
摘要： PROBLEM: To prevent oil film breakage in bearings without expelling of air internally accumulated at the bearing. METHOD FOR SOLVING THE PROBLEM: A hydrodynamic bearing type rotary device in which radial hydrodynamic grooves and thrust hydrodynamic grooves form communicating channels; have communicating holes designed to communicate the groove end of the radial hydrodynamic groove on the side opposite the thrust hydrodynamic grooves with the groove end of the thrust hydrodynamic groove on the side opposite the radial hydrodynamic grooves; have a circulation route composed by the communicating hole, the radial hydrodynamic groove, and the thrust hydrodynamic groove; and circulate lubricating oil by means of a pump force of the hydrodynamic groove. It is possible to attain a long-lasting hydrodynamic bearing-type rotary device in which lubricating oil is circulated by pressure applied by a hydrodynamic groove positioned upstream to a bearing portion, ceasing the formation of low-pressure parts from the bearing portion, preventing the accumulation of air bubbles, and thereby preventing the occurrence of oil film breakage at the radial hydrodynamic groove and the thrust hydrodynamic groove.
摘要翻译：问题：为防止轴承内部积聚的空气排出轴承油膜破损。解决问题的方法：一种流体动力轴承型旋转装置，其中径向流体动力槽和推力流体动力槽形成连通通道; 具有连通孔，其设计成在径向流体动力槽的与推力流体动力槽相对的一侧的沟槽端部与推力流体动力槽的与径向流体动力槽相对的一侧的槽端部连通; 具有由连通孔，径向流体动力槽和推力流体动力槽组成的循环路线; 并通过流体动力槽的泵力使润滑油循环。可以获得一种持久的流体动力轴承式旋转装置，其中润滑油通过由位于轴承部分上游的流体动力槽施加的压力循环，停止从轴承部分形成低压部件，从而防止积聚气泡，从而防止在径向流体动力槽和推力流体动力槽处发生油膜破裂。

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