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    • 71. 发明申请
    • VALVE EXHAUSTING APPARATUS AND A DRIER OF FOOD TREATMENT SYSTEM HAVING IT
    • 阀门排料装置和食品处理系统的干燥器
    • US20110078915A1
    • 2011-04-07
    • US12921139
    • 2008-09-04
    • Sung Jin KimSang Gu SimKi Chul Kim
    • Sung Jin KimSang Gu SimKi Chul Kim
    • D06F58/04B02C7/12F16K31/04
    • A23L3/40F26B11/16F26B25/002
    • An exhaust valve apparatus and a drier of a food treatment system having the exhaust valve apparatus are disclosed. The drier includes a drum having an input port and a discharge port. A stirring screw is rotatably disposed in the drum, and includes rotary blades for stirring and crushing the food waste and a rotating shaft for supporting the rotary blades. A power supply unit is provided on a surface of the drum and provides power to the stirring screw to rotate the stirring screw. A heater is provided on the outer surface of the drum body and provides high temperature heat to the inner space of the drum when electric power is applied to the heater, thus drying the food waste. An exhaust apparatus is mounted to the lower surface of the discharge port to open or close the discharge port.
    • 公开了一种具有排气阀装置的食品处理系统的排气阀装置和干燥器。 干燥机包括具有输入端口和排出口的滚筒。 搅拌螺杆可旋转地设置在滚筒中,并且包括用于搅拌和粉碎食物垃圾的旋转叶片和用于支撑旋转叶片的旋转轴。 供电单元设置在滚筒的表面上,并向搅拌螺杆供电以旋转搅拌螺杆。 在鼓体的外表面上设置有加热器,并且当向加热器施加电力时,向鼓的内部空间提供高温热量,从而干燥食物废物。 排气装置安装在排出口的下表面以打开或关闭排出口。
    • 75. 发明授权
    • Semiconductor device and manufacturing method thereof
    • 半导体装置及其制造方法
    • US07763930B2
    • 2010-07-27
    • US11847090
    • 2007-08-29
    • Sung Jin Kim
    • Sung Jin Kim
    • H01L29/78H01L21/36
    • H01L29/42324H01L21/26513H01L21/26586H01L27/115H01L27/11521H01L29/66636H01L29/7881
    • Provided are a semiconductor device and a manufacturing method thereof. A pair of adjacent gate structure can be formed on a substrate. Mask patterns exposing a portion located between the gate structures are formed. The substrate portion located between the gate structures can be etched using the mask patterns as an etch mask to form a pocket. First conduction type impurities can be implanted into the pocket to form a first impurity layer in a surface of the pocket. Second conduction type impurities can be implanted into the pocket to form a second impurity layer on the first impurity layer. The pocket can be filled with an insulating material. Accordingly, impurities having a type opposite to the type of source junction impurities are implanted into the pocket to reduce a potential barrier of a source junction. Consequently, punch-through generated between a source and a drain can be inhibited.
    • 提供半导体器件及其制造方法。 可以在基板上形成一对相邻的栅极结构。 形成露出位于栅极结构之间的部分的掩模图案。 可以使用掩模图案作为蚀刻掩模来蚀刻位于栅极结构之间的衬底部分,以形成口袋。 可以将第一导电型杂质注入到口袋中以在口袋的表面中形成第一杂质层。 可以将第二导电型杂质注入到口袋中以在第一杂质层上形成第二杂质层。 口袋可以填充绝缘材料。 因此,具有与源极结杂质类型相反的类型的杂质注入口袋中以减少源极结的势垒。 因此,可以抑制在源极和漏极之间产生的穿通。