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71. 发明申请

US20130330368A1 EYE DROP COMPOSITION FOR PREVENTION AND TREATMENT OF OPHTHALMIC DISEASES CONTAINING FUSION PROTEIN OF FK506 BINDING PROTEIN 有权
标题翻译：用于预防和治疗含有FK506结合蛋白的融合蛋白的眼病的眼睑组合物
公开(公告)号：US20130330368A1
公开(公告)日：2013-12-12
申请号：US13985845
申请日：2011-04-06
申请人： Soo Young Choi , Dae Won Kim , Sung Ho Lee , Jinseu Park , Won Sik Eum
发明人： Soo Young Choi , Dae Won Kim , Sung Ho Lee , Jinseu Park , Won Sik Eum
IPC分类号： C12N9/90 , C07K14/00 , C07K7/06
CPC分类号： C12N9/90 , A61K38/00 , A61K38/16 , A61K38/52 , C07K7/06 , C07K14/001 , C07K2319/00 , C07K2319/10 , C12Y502/01008 , Y10S514/914
摘要： Disclosed is a treatment for ophthalmic diseases, more specifically, a pharmaceutical composition for treating ophthalmic diseases including a fusion protein of FK506 binding protein capable of penetrating into the ocular tissue as an active ingredient.
摘要翻译：本发明涉及一种治疗眼科疾病的方法，更具体地说，涉及一种治疗眼科疾病的药物组合物，包括能够渗入眼组织的FK506结合蛋白的融合蛋白作为有效成分。

72. 发明申请

US20130140009A1 ROBUST OUTLET PLUMBING FOR HIGH POWER FLOW REMOTE PLASMA SOURCE 审中-公开
公开(公告)号：US20130140009A1
公开(公告)日：2013-06-06
申请号：US13722637
申请日：2012-12-20
申请人： John M. White , Soo Young Choi , Beom Soo Park , Gaku Furuta , Young Jin Choi , Robin L. Tiner
发明人： John M. White , Soo Young Choi , Beom Soo Park , Gaku Furuta , Young Jin Choi , Robin L. Tiner
IPC分类号： F28D7/00
CPC分类号： F28D7/00 , C23C16/4405 , F28D2021/0078 , F28F9/26
摘要： The present invention generally includes a coupling between components. When igniting a plasma remote from a processing chamber, the reactive gas ions may travel to the processing chamber through numerous components. The reactive gas ions may be quite hot and cause the various components to become very hot and thus, the seals between apparatus components may fail. Therefore, it may be beneficial to cool any metallic components through which the reactive gas ions may travel. However, at the interface between the cooled metallic component and a ceramic component, the ceramic component may experience a temperature gradient sufficient to crack the ceramic material due to the heat of the reactive gas ions and the coolness of the metallic component. Therefore, extending a flange of the metallic component into the ceramic component may lessen the temperature gradient at the interface and reduce cracking of the ceramic component.

73. 发明授权

US08361549B2 Power loading substrates to reduce particle contamination 有权
标题翻译：功率负载基板以减少颗粒污染
公开(公告)号：US08361549B2
公开(公告)日：2013-01-29
申请号：US13315366
申请日：2011-12-09
申请人： Dong-Kil Yim , John M. White , Soo Young Choi , Han Byoul Kim , Jin Man Ha , Beom Soo Park
发明人： Dong-Kil Yim , John M. White , Soo Young Choi , Han Byoul Kim , Jin Man Ha , Beom Soo Park
IPC分类号： C23C16/00 , H05H1/24
CPC分类号： C23C16/4401 , C23C14/02 , C23C14/564 , C23C16/0209 , H01J2237/2001
摘要： A method for preventing particle contamination within a processing chamber is disclosed. Preheating the substrate within the processing chamber may cause a thermophoresis effect so that particles within the chamber that are not adhered to a surface may not come to rest on the substrate. One method to increase the substrate temperature is to plasma load the substrate. Plasma loading comprises providing an inert gas plasma to the substrate to heat the substrate. Another method to increase the substrate temperature is high pressure loading the substrate. High pressure loading comprises heating the substrate while increasing the chamber pressure to between about 1 Torr and about 10 Torr. By rapidly increasing the substrate temperature within the processing chamber prior to substrate processing, particle contamination is less likely to occur.
摘要翻译：公开了一种防止处理室内的颗粒污染的方法。预处理室内的衬底可能引起热泳效应，使得室内未附着于表面的颗粒可能不会停留在衬底上。增加衬底温度的一种方法是等离子体加载衬底。等离子体负载包括向衬底提供惰性气体等离子体以加热衬底。提高衬底温度的另一种方法是加载衬底的高压。高压负载包括加热衬底，同时将腔室压力提高到约1托和约10托之间。通过在基板处理之前快速增加处理室内的基板温度，不太可能发生颗粒污染。

74. 发明授权

US08147614B2 Multi-gas flow diffuser 失效
标题翻译：多气流扩散器
公开(公告)号：US08147614B2
公开(公告)日：2012-04-03
申请号：US12794756
申请日：2010-06-06
申请人： John M. White , Carl Sorensen , Robin Tiner , Beom Soo Park , Soo Young Choi
发明人： John M. White , Carl Sorensen , Robin Tiner , Beom Soo Park , Soo Young Choi
IPC分类号： C23C16/00
CPC分类号： C23C16/45565 , C23C16/45591 , H01J37/32091 , H01J37/32357 , H01J37/3244 , H01J37/32449
摘要： Embodiments of the disclosure generally provide a method and apparatus for processing a substrate in a vacuum process chamber. In one embodiment a vacuum process chamber is provided that includes a chamber body and lid disposed on the chamber body. A blocker plate is coupled to the lid and bounds a staging plenum therewith. A gas distribution plate is coupled to the lid. The gas distribution plate separates a main plenum defined between the gas distribution plate and the blocker plate from a process volume defined within the chamber body. The gas distribution plate and the blocker plate define a spacing gradient therebetween which influences mixing of gases within the main plenum.
摘要翻译：本公开的实施例通常提供用于在真空处理室中处理衬底的方法和装置。在一个实施例中，提供真空处理室，其包括设置在室主体上的室主体和盖。阻挡板联接到盖子并且与其分隔起来。气体分配板联接到盖子上。气体分配板将限定在气体分配板和阻挡板之间的主增压室与室主体内限定的过程体积分开。气体分配板和阻挡板限定了它们之间的间隔梯度，其影响主增压室内气体的混合。

75. 发明申请

US20120045904A1 METHODS FOR FORMING A HYDROGEN FREE SILICON CONTAINING DIELECTRIC FILM 有权
标题翻译：形成含无电解硅的电介质膜的方法
公开(公告)号：US20120045904A1
公开(公告)日：2012-02-23
申请号：US13214161
申请日：2011-08-20
申请人： Soo Young Choi
发明人： Soo Young Choi
IPC分类号： H01L21/314 , H01L21/318 , H01L21/316
CPC分类号： H01L29/4908 , C23C16/308 , C23C16/402 , H01J37/32357 , H01L21/02554 , H01L21/02565 , H01L21/02592 , H01L27/1248 , H01L29/458 , H01L29/66765 , H01L29/78681 , H01L29/7869 , H01L29/78693
摘要： Embodiments of the disclosure generally provide methods of forming a hydrogen free silicon containing layer in TFT devices. The hydrogen free silicon containing layer may be used as a passivation layer, a gate dielectric layer, an etch stop layer, or other suitable layers in TFT devices, photodiodes, semiconductor diode, light-emitting diode (LED), or organic light-emitting diode (OLED), or other suitable display applications. In one embodiment, a method for forming a hydrogen free silicon containing layer in a thin film transistor includes supplying a gas mixture comprising a hydrogen free silicon containing gas and a reacting gas into a plasma enhanced chemical vapor deposition chamber, wherein the hydrogen free silicon containing gas is selected from a group consisting of SiF4, SiCl4, Si2Cl6, and forming a hydrogen free silicon containing layer on the substrate in the presence of the gas mixture.
摘要翻译：本公开的实施方案通常提供在TFT器件中形成无氢硅含量层的方法。不含氢的含硅层可用作TFT器件，光电二极管，半导体二极管，发光二极管（LED）或有机发光二极管中的钝化层，栅极介电层，蚀刻停止层或其他合适的层二极管（OLED）或其他合适的显示应用。在一个实施例中，在薄膜晶体管中形成无氢硅含量层的方法包括将包含无氢硅的气体和反应气体的气体混合物供应到等离子体增强化学气相沉积室中，其中含有气体选自由SiF 4，SiCl 4，Si 2 Cl 6组成的组，并且在气体混合物的存在下在衬底上形成无氢的含硅层。

76. 发明申请

US20120040536A1 A-SI SEASONING EFFECT TO IMPROVE SIN RUN-TO-RUN UNIFORMITY 有权
标题翻译： A-SI季节效应提高了单机运行的均匀性
公开(公告)号：US20120040536A1
公开(公告)日：2012-02-16
申请号：US13207315
申请日：2011-08-10
申请人： Gaku Furuta , Soo Young Choi , Beom Soo Park , Young-jin Choi , Omori Kenji
发明人： Gaku Furuta , Soo Young Choi , Beom Soo Park , Young-jin Choi , Omori Kenji
IPC分类号： H01L21/318
CPC分类号： H01L21/0217 , C23C16/345 , C23C16/4404 , H01L21/02274 , H01L21/02299
摘要： Embodiments of the present invention provide methods for depositing a nitrogen-containing material on large-sized substrates disposed in a processing chamber. In one embodiment, a method includes processing a batch of substrates within a processing chamber to deposit a nitrogen-containing material on a substrate from the batch of substrates, and performing a seasoning process at predetermined intervals during processing the batch of substrates to deposit a conductive seasoning layer over a surface of a chamber component disposed in the processing chamber. The chamber component may include a gas distribution plate fabricated from a bare aluminum without anodizing. In one example, the conductive seasoning layer may include amorphous silicon, doped amorphous silicon, doped silicon, doped polysilicon, doped silicon carbide, or the like.
摘要翻译：本发明的实施方案提供了在设置在处理室中的大尺寸基板上沉积含氮材料的方法。在一个实施方案中，一种方法包括处理处理室内的一批衬底，以将一批含有底物的含氮材料从该批衬底上沉积，并在处理该批衬底期间以预定间隔进行调味过程以沉积导电在处理室中设置的腔室部件的表面上的调味层。腔室部件可以包括由裸铝制成而不阳极氧化的气体分配板。在一个示例中，导电调味层可以包括非晶硅，掺杂非晶硅，掺杂硅，掺杂多晶硅，掺杂碳化硅等。

77. 发明申请

US20120027918A1 SHOWERHEAD SUPPORT STRUCTURE FOR IMPROVED GAS FLOW 有权
标题翻译：改善气体流量的淋浴支撑结构
公开(公告)号：US20120027918A1
公开(公告)日：2012-02-02
申请号：US13163241
申请日：2011-06-17
申请人： Robin L. Tiner , Soo Young Choi , Qunhua Wang , Jrjyan Jerry Chen
发明人： Robin L. Tiner , Soo Young Choi , Qunhua Wang , Jrjyan Jerry Chen
IPC分类号： C23C16/455 , B05D5/12
CPC分类号： B05B1/005 , C23C16/45565 , H01J37/3244
摘要： Embodiments of the present invention generally provide apparatus and methods for supporting a gas distribution showerhead in a processing chamber. In one embodiment, a gas distribution showerhead for a vacuum chamber is provided. The gas distribution showerhead comprises a body having a first side and a second side opposite the first side, and a plurality of gas passages formed through the body, the gas passages comprising a first bore formed in the first side that is fluidly coupled to a second bore formed in the second side by a restricting orifice, and a suspension feature formed in the first bore of at least one of the gas passages.
摘要翻译：本发明的实施例通常提供用于在处理室中支撑气体分配喷头的装置和方法。在一个实施例中，提供了一种用于真空室的气体分配喷头。所述气体分配喷头包括具有第一侧和与所述第一侧相对的第二侧的主体和穿过所述主体形成的多个气体通道，所述气体通道包括形成在所述第一侧中的第一孔，所述第一孔流体地联接到第二侧通过限制孔形成在第二侧中的孔，以及形成在至少一个气体通道的第一孔中的悬挂特征。

78. 发明申请

US20110269274A1 THIN FILM TRANSISTORS HAVING MULTIPLE DOPED SILICON LAYERS 有权
标题翻译：具有多层掺杂硅层的薄膜晶体管
公开(公告)号：US20110269274A1
公开(公告)日：2011-11-03
申请号：US12913846
申请日：2010-10-28
申请人： Gaku Furuta , Soo Young Choi , Omori Kenji
发明人： Gaku Furuta , Soo Young Choi , Omori Kenji
IPC分类号： H01L21/336
CPC分类号： H01L29/66765 , G02F1/1362 , H01L29/78618
摘要： Embodiments of the present invention generally relate to a TFT and a method for its fabrication. The TFT disclosed herein is a silicon based TFT in which the active channel comprises amorphous silicon. Over the amorphous silicon, multiple layers of doped silicon are deposited in which the resistivity of the doped silicon layers is higher at the interface with the amorphous silicon layer as compared to the interface with the source and drain electrodes. Alternatively, a single doped silicon layer is deposited over the amorphous silicon in which the properties of the single doped layer change throughout the thickness. It is better to have a lower resistivity at the interface with the source and drain electrodes, but lower resistivity usually means less substrate throughput. By utilizing multiple or graded layers, low resistivity can be achieved. The embodiments disclosed herein include low resistivity without sacrificing substrate throughput.
摘要翻译：本发明的实施例一般涉及TFT及其制造方法。本文公开的TFT是其中有源沟道包括非晶硅的硅基TFT。在非晶硅上，沉积了多层掺杂硅，其中掺杂硅层的电阻率在与非晶硅层的界面处比与源极和漏极的界面相比更高。或者，在非晶硅上沉积单个掺杂的硅层，其中单个掺杂层的性质在整个厚度上变化。在与源极和漏极的界面处具有较低的电阻率是更好的，但较低的电阻率通常意味着较少的衬底生产量。通过利用多层或分层，可以实现低电阻率。本文公开的实施例包括低电阻率而不牺牲基板生产量。

79. 发明授权

US07988875B2 Differential etch rate control of layers deposited by chemical vapor deposition 有权
标题翻译：通过化学气相沉积沉积的层的差分蚀刻速率控制
公开(公告)号：US07988875B2
公开(公告)日：2011-08-02
申请号：US12027964
申请日：2008-02-07
申请人： Soo Young Choi , Gaku Furuta
发明人： Soo Young Choi , Gaku Furuta
IPC分类号： C23F3/00
CPC分类号： H01L21/31116 , C03C17/34 , C03C2218/33 , C23C16/308 , C23C16/345 , C23C16/401 , H01L21/31111
摘要： A method and apparatus is provided for controlling the etch profile of a multilayer layer stack by depositing a first and second material layer with differential etch rates in the same or different processing chamber. In one embodiment of the invention, a process for etching substrate material is provided including depositing a first silicon-containing material layer having a first etch rate on the substrate surface from a nitrogen-containing precursor at a first flow rate and a silicon-containing precursor, depositing a second silicon-containing material layer having a second etch rate different than the first etch rate on the first silicon-containing material layer from the nitrogen-containing precursor at a second flow rate different than the first flow rate and the silicon-containing precursor, etching the first silicon-containing material layer and the second silicon-containing material layer, and forming a taper etch profile in the first silicon-containing material layer and the second silicon-containing material layer.
摘要翻译：提供了一种方法和装置，用于通过在相同或不同的处理室中沉积差分蚀刻速率的第一和第二材料层来控制多层堆叠的蚀刻轮廓。在本发明的一个实施例中，提供了一种用于蚀刻衬底材料的方法，包括：以第一流速从含氮前体沉积具有第一蚀刻速率的第一含硅材料层，并在第一流速下沉积含硅前体在第一含硅材料层上以不同于第一流速的第二流量从含氮前体沉积具有与第一蚀刻速率不同的第二蚀刻速率的第二含硅材料层，蚀刻第一含硅材料层和第二含硅材料层，并在第一含硅材料层和第二含硅材料层中形成锥形蚀刻轮廓。

80. 发明授权

US07902991B2 Frequency monitoring to detect plasma process abnormality 有权
标题翻译：频率监测检测等离子体过程异常
公开(公告)号：US07902991B2
公开(公告)日：2011-03-08
申请号：US11682290
申请日：2007-03-05
申请人： Beom Soo Park , Soo Young Choi , John M. White , Hong Soon Kim , James Hoffman
发明人： Beom Soo Park , Soo Young Choi , John M. White , Hong Soon Kim , James Hoffman
IPC分类号： G08B21/00
CPC分类号： H01J37/32174 , H01J37/32935 , H03H7/40
摘要： Abnormal conditions within an RF-powered plasma process chamber are detected by detecting whether the frequency of a variable-frequency RF power supply moves outside established lower and upper limits. In a first aspect, a first pair of lower and upper limits are established as a function of the frequency of the power supply sampled after a new process step begins or after a sample control signal changes state. In a second aspect, a second pair of lower and upper limits are not adapted to the frequency of the power supply. Both aspects preferably are used together to detect different occurrences of abnormal conditions.
摘要翻译：通过检测可变频率RF电源的频率是否移动到建立的下限和上限之外，来检测RF供电的等离子体处理室内的异常情况。在第一方面，根据在新处理步骤开始之后或在采样控制信号改变状态之后采样的电源的频率，建立第一对下限和上限。在第二方面，第二对下限和上限不适合电源的频率。两个方面优选一起用于检测异常状况的不同出现。

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