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1. 发明授权

US09382621B2 Ground return for plasma processes 有权
标题翻译：等离子体工艺的接地回路
公开(公告)号：US09382621B2
公开(公告)日：2016-07-05
申请号：US12700484
申请日：2010-02-04
申请人： Soo Young Choi , Robin L. Tiner , Shinichi Kurita , John M. White , Carl A. Sorensen , Jeffrey A. Kho , Suhail Anwar , Makoto Inagawa , Gaku Furuta
发明人： Soo Young Choi , Robin L. Tiner , Shinichi Kurita , John M. White , Carl A. Sorensen , Jeffrey A. Kho , Suhail Anwar , Makoto Inagawa , Gaku Furuta
IPC分类号： C23C16/509 , C23C16/458 , H01J37/32 , H01L21/67
CPC分类号： C23C16/5096 , C23C16/4585 , H01J37/32091 , H01J37/32174 , H01J37/32568 , H01L21/67069
摘要： A method and apparatus for providing an electrically symmetrical ground or return path for electrical current between two electrodes is described. The apparatus includes at least on radio frequency (RF) device coupled to one of the electrodes and between a sidewall and/or a bottom of a processing chamber. The method includes moving one electrode relative to another and realizing a ground return path based on the position of the displaced electrode using one or both of a RF device coupled to a sidewall and the electrode, a RF device coupled to a bottom of the chamber and the electrode, or a combination thereof.
摘要翻译：描述了一种用于提供用于两个电极之间的电流的电对称接地或返回路径的方法和装置。该装置至少包括耦合到电极之一和处理室的侧壁和/或底部之间的射频（RF）装置。该方法包括相对于另一个电极移动一个电极，并且基于使用耦合到侧壁和电极的RF器件中的一个或两个的位移电极实现接地返回路径，耦合到腔室的底部的RF器件和电极或其组合。

2. 发明申请

US20090283039A1 ROBUST OUTLET PLUMBING FOR HIGH POWER FLOW REMOTE PLASMA SOURCE 审中-公开
标题翻译：大功率流量远程等离子体源的稳健出口
公开(公告)号：US20090283039A1
公开(公告)日：2009-11-19
申请号：US12467477
申请日：2009-05-18
申请人： JOHN M. WHITE , Soo Young Choi , Beom Soo Park , Gaku Furuta , Young Jin Choi , Robin L. Tiner
发明人： JOHN M. WHITE , Soo Young Choi , Beom Soo Park , Gaku Furuta , Young Jin Choi , Robin L. Tiner
IPC分类号： C23C16/54 , F28D7/00
CPC分类号： F28D7/00 , C23C16/4405 , F28D2021/0078 , F28F9/26
摘要： The present invention generally includes a coupling between components. When igniting a plasma remote from a processing chamber, the reactive gas ions may travel to the processing chamber through numerous components. The reactive gas ions may be quite hot and cause the various components to become very hot and thus, the seals between apparatus components may fail. Therefore, it may be beneficial to cool any metallic components through which the reactive gas ions may travel. However, at the interface between the cooled metallic component and a ceramic component, the ceramic component may experience a temperature gradient sufficient to crack the ceramic material due to the heat of the reactive gas ions and the coolness of the metallic component. Therefore, extending a flange of the metallic component into the ceramic component may lessen the temperature gradient at the interface and reduce cracking of the ceramic component.
摘要翻译：本发明通常包括组件之间的联接。当点燃离开处理室的等离子体时，反应气体离子可通过许多部件行进到处理室。反应气体离子可能相当热，并导致各种部件变得非常热，因此，装置部件之间的密封可能失效。因此，冷却反应气体离子可以通过其移动的任何金属组分可能是有益的。然而，在冷却的金属组分和陶瓷组分之间的界面处，由于反应气体离子的热量和金属组分的冷却，陶瓷组分可能经历足以破坏陶瓷材料的温度梯度。因此，将金属部件的凸缘延伸到陶瓷部件中可以减小界面处的温度梯度并减少陶瓷部件的开裂。

3. 发明申请

US20090023241A1 CLEAN RATE IMPROVEMENT BY PRESSURE CONTROLLED REMOTE PLASMA SOURCE 审中-公开
标题翻译：压力控制远程等离子体源的清洁率改进
公开(公告)号：US20090023241A1
公开(公告)日：2009-01-22
申请号：US12174408
申请日：2008-07-16
申请人： Gaku Furuta , Liwei Li , Takao Hashimoto , Soo Young Choi
发明人： Gaku Furuta , Liwei Li , Takao Hashimoto , Soo Young Choi
IPC分类号： H01L21/20 , H05H1/00
CPC分类号： B08B7/0035 , C23C16/24 , C23C16/4405
摘要： The present invention generally comprises a method for cleaning a large area substrate processing chamber. As chamber volume increases, it has surprisingly been found that simply scaling up the cleaning conditions may not effectively clean silicon from the exposed chamber surfaces. Undesired silicon deposits on exposed chamber surfaces may lead to contamination in solar panel formation. Increasing the pressure of the chamber to about 10 Torr or greater while maintaining the chamber at a temperature between about 150 degrees Celsius and 250 degrees Celsius increases plasma cleaning effectiveness such that silicon deposits are removed from the chamber. The combination of high pressure and low temperature may reduce substrate contamination without sacrificing substrate throughput in solar panel fabrication.
摘要翻译：本发明通常包括清洗大面积基板处理室的方法。随着室体积的增加，令人惊讶地发现，简单地放大清洁条件可能不能有效地从暴露的室表面清洁硅。暴露的室表面上的不期望的硅沉积物可能导致太阳能电池板形成中的污染。将室的压力提高到约10托或更高，同时将室保持在约150摄氏度和250摄氏度之间的温度，增加等离子体清洁效果，使得硅沉积物从室中移除。高压和低温的组合可以减少基板污染，而不会牺牲太阳能电池板制造中的基板产量。

4. 发明申请

US20080178807A1 GAS DISTRIBUTION UNIFORMITY IMPROVEMENT BY BAFFLE PLATE WITH MULTI-SIZE HOLES FOR LARGE SIZE PECVD SYSTEMS 审中-公开
标题翻译：气体分布均匀度改进由具有多个尺寸PECVD系统的多尺寸孔板
公开(公告)号：US20080178807A1
公开(公告)日：2008-07-31
申请号：US12099112
申请日：2008-04-07
申请人： Qunhua Wang , Li Hou , Sanjay Yadav , Gaku Furuta , Kenji Omori , Soo Young Choi , John M. White
发明人： Qunhua Wang , Li Hou , Sanjay Yadav , Gaku Furuta , Kenji Omori , Soo Young Choi , John M. White
IPC分类号： C23C16/00
CPC分类号： H01J37/3244 , C23C16/45565 , C23F4/00 , H01J37/32449
摘要： Embodiments of a gas distribution plate for distributing gas in a processing chamber for large area substrates are provided. The embodiments describe a gas distribution plate assembly for a plasma processing chamber having a cover plate comprises a diffuser plate having an upstream side, a downstream side facing a processing region, and a plurality of gas passages formed through the diffuser plate, and a baffle plate, placed between the cover plate of the process chamber and the diffuser plate, having a plurality of holes extending from the upper surface to the lower surface of the baffle plate, wherein the plurality of holes have at least two sizes. The small pinholes of the baffle plate are used to allow sufficient pass-through of gas mixture, while the large holes of the baffle plate are used to improve the process uniformity across the substrate.
摘要翻译：提供了用于在大面积基板的处理室中分配气体的气体分配板的实施例。实施方式描述了一种用于等离子体处理室的气体分配板组件，其具有盖板，该盖板包括具有上游侧，面向加工区域的下游侧和通过扩散板形成的多个气体通道的扩散板，以及挡板，放置在处理室的盖板和扩散板之间，具有从挡板的上表面延伸到下表面的多个孔，其中多个孔具有至少两个尺寸。挡板的小针孔用于允许气体混合物的充分通过，而挡板的大孔用于改善基板上的工艺均匀性。

5. 发明申请

US20130263782A1 FLIP EDGE SHADOW FRAME 审中-公开
标题翻译：卷边边框
公开(公告)号：US20130263782A1
公开(公告)日：2013-10-10
申请号：US13569064
申请日：2012-08-07
申请人： QUNHUA WANG , Soo Young Choi , Robin L. Tiner , John M. White , Gaku Furuta , Beom Soo Park
发明人： QUNHUA WANG , Soo Young Choi , Robin L. Tiner , John M. White , Gaku Furuta , Beom Soo Park
IPC分类号： C23C16/04
摘要： Device for processing a substrate are described herein. An apparatus for controlling deposition on a substrate can include a chamber comprising a shadow frame support, a substrate support comprising a substrate supporting surface, a shadow frame with a shadow frame body including a first support surface, a second support surface opposite the first surface, and a detachable lip connected with the shadow frame body. The detachable lip can include a support connection, a first lip surface facing the substrate, a second lip surface opposite the first lip surface, a first edge positioned over the first support surface, and a second edge opposite the first edge to contact the substrate.
摘要翻译：本文描述了用于处理衬底的装置。用于控制基板上的沉积的装置可以包括：腔室，其包括阴影框架支撑件，包括基板支撑表面的基板支撑件，具有包括第一支撑表面的阴影框架主体的阴影框架，与第一表面相对的第二支撑表面，以及与阴影框体连接的可拆卸唇缘。可拆卸唇缘可以包括支撑连接，面向基底的第一唇缘表面，与第一唇缘表面相对的第二唇缘表面，位于第一支撑表面上方的第一边缘以及与第一边缘相对的第二边缘以接触基底。

6. 发明申请

US20110236599A1 Plasma processing including asymmetrically grounding a susceptor 有权
标题翻译：等离子体处理包括不对称接地的感受器
公开(公告)号：US20110236599A1
公开(公告)日：2011-09-29
申请号：US13153641
申请日：2011-06-06
申请人： Gaku Furuta , Soo Young Choi , Young-Jin Choi
发明人： Gaku Furuta , Soo Young Choi , Young-Jin Choi
IPC分类号： C23C16/509 , C23C16/455 , C23C16/458
CPC分类号： C23C16/4585 , C23C16/45565 , C23C16/5096 , H01J37/32091 , H01J37/32568 , H01J37/32577 , H01J37/32623 , H01J37/32697
摘要： An asymmetrically grounded susceptor used in a plasma processing chamber for chemical vapor deposition onto large rectangular panels supported on and grounded by the susceptor. A plurality of grounding straps are connected between the periphery of the susceptor to the grounded vacuum chamber to shorten the grounding paths for RF electrons. Flexible straps allow the susceptor to vertically move. The straps provide a conductance to ground which is asymmetric around the periphery. The straps may be evenly spaced but have different thicknesses or different shapes or be removed from available grounding point and hence provide different RF conductances. The asymmetry is selected to improve the deposition uniformity and other qualities of the PECVD deposited film.
摘要翻译：用于等离子体处理室中的不对称接地的基座，用于化学气相沉积到由基座支撑并接地的大矩形面板上。多个接地带连接在基座的外围与接地的真空室之间，以缩短RF电子的接地路径。柔性带允许基座垂直移动。带子提供对周边不对称的地面电导。带可以是均匀间隔的，但是具有不同的厚度或不同的形状，或者从可用的接地点去除并因此提供不同的RF电导。选择不对称性以改善PECVD沉积膜的沉积均匀性和其他质量。

7. 发明申请

US20110146577A1 SHOWERHEAD WITH INSULATED CORNER REGIONS 审中-公开
标题翻译：具有绝缘角区域的淋浴
公开(公告)号：US20110146577A1
公开(公告)日：2011-06-23
申请号：US12975708
申请日：2010-12-22
申请人： SUHAIL ANWAR , John M. White , Soo Young Choi , Gaku Furuta , Shinichi Kurita , Carl Sorenson , Robin L. Tiner
发明人： SUHAIL ANWAR , John M. White , Soo Young Choi , Gaku Furuta , Shinichi Kurita , Carl Sorenson , Robin L. Tiner
IPC分类号： C23C16/455 , C23C16/458 , C23C16/50 , B05B1/14
CPC分类号： C23C16/4585 , C23C16/45565 , C23C16/5096 , H01J37/32174 , H01J37/32449 , H01J37/32541 , H01J37/3255
摘要： Embodiments of the present invention generally relate to a gas distribution showerhead having insulated corner regions to reduce arcing and improve deposition uniformity control. In one embodiment, the gas distribution showerhead is formed of a conductive material with material from the corner regions removed. Corner members formed substantially in the shape of the removed portion of corner regions are attached to the conductive showerhead. The corner members may be made of a material having electrical insulating properties, such as a ceramic or insulating polymer.
摘要翻译：本发明的实施方案一般涉及具有绝缘拐角区域以减少电弧放电并改善沉积均匀性控制的气体分配喷头。在一个实施例中，气体分配喷头由导电材料形成，其中去除了角部区域的材料。基本上形成角部区域的去除部分形状的角部件被附接到导电花洒。角部件可以由具有电绝缘性的材料制成，例如陶瓷或绝缘聚合物。

8. 发明申请

US20100196626A1 GROUND RETURN FOR PLASMA PROCESSES 有权
标题翻译：等离子体工艺的接地返回
公开(公告)号：US20100196626A1
公开(公告)日：2010-08-05
申请号：US12700484
申请日：2010-02-04
申请人： Soo Young Choi , Robin L. Tiner , Shinichi Kurita , John M. White , Carl A. Sorensen , Jeffrey A. Kho , Suhail Anwar , Makoto Inagawa , Gaku Furuta
发明人： Soo Young Choi , Robin L. Tiner , Shinichi Kurita , John M. White , Carl A. Sorensen , Jeffrey A. Kho , Suhail Anwar , Makoto Inagawa , Gaku Furuta
IPC分类号： C23C16/509
CPC分类号： C23C16/5096 , C23C16/4585 , H01J37/32091 , H01J37/32174 , H01J37/32568 , H01L21/67069
摘要： A method and apparatus for providing an electrically symmetrical ground or return path for electrical current between two electrodes is described. The apparatus includes at least on radio frequency (RF) device coupled to one of the electrodes and between a sidewall and/or a bottom of a processing chamber. The method includes moving one electrode relative to another and realizing a ground return path based on the position of the displaced electrode using one or both of a RF device coupled to a sidewall and the electrode, a RF device coupled to a bottom of the chamber and the electrode, or a combination thereof.
摘要翻译：描述了一种用于提供用于两个电极之间的电流的电对称接地或返回路径的方法和装置。该装置至少包括耦合到电极之一和处理室的侧壁和/或底部之间的射频（RF）装置。该方法包括相对于另一个电极移动一个电极，并且基于使用耦合到侧壁和电极的RF器件中的一个或两个的位移电极实现接地返回路径，耦合到腔室的底部的RF器件和电极或其组合。

9. 发明申请

US20100151688A1 METHOD TO PREVENT THIN SPOT IN LARGE SIZE SYSTEM 审中-公开
标题翻译：在大型系统中防止漏点的方法
公开(公告)号：US20100151688A1
公开(公告)日：2010-06-17
申请号：US12634921
申请日：2009-12-10
申请人： Young Jin Choi , Gaku Furuta , Soo Young Choi , Beom Soo Park
发明人： Young Jin Choi , Gaku Furuta , Soo Young Choi , Beom Soo Park
IPC分类号： H01L21/3065 , H01L21/302
CPC分类号： C23C16/4583 , C23C16/505 , H01J37/32091 , H01J37/32733 , H01L21/68742
摘要： Embodiments disclosed herein generally include methods of ensuring uniform deposition on a substrate. The smallest gap between a portion of the substrate and the substrate support upon which the substrate rests may lead to uneven deposition of material or ‘thin spots’ on the substrate. Large area substrates, due to their size, are susceptible to numerous gaps at random locations. By inducing an electrostatic charge on the substrate prior to placing the substrate onto the substrate support, the substrate may be placed generally flush against the substrate support. The electrostatic charge on the substrate creates an attraction between the substrate and substrate support to pull substantially the entire surface of the substrate into contact with the substrate support. Material may then be substantially uniformly deposited on the substrate while reducing ‘thin spots’.
摘要翻译：本文公开的实施例通常包括确保在基底上均匀沉积的方法。衬底的一部分和衬底支撑物之间的最小间隙可能导致材料的不均匀沉积或衬底上的“薄点”。由于其大尺寸，大面积基板在随机位置易受许多间隙的影响。通过在将衬底放置在衬底支撑件上之前在衬底上引起静电电荷，衬底可以放置在与衬底支撑件相对齐齐的位置。衬底上的静电电荷在衬底和衬底支撑件之间产生吸引力，以基本上将衬底的整个表面拉到与衬底支撑件接触。然后可以将材料基本均匀地沉积在衬底上，同时减少“薄点”。

10. 发明申请

US20090238734A1 SUSCEPTOR WITH ROLL-FORMED SURFACE AND METHOD FOR MAKING SAME 有权
标题翻译：具有辊形表面的SUSCEPTOR及其制造方法
公开(公告)号：US20090238734A1
公开(公告)日：2009-09-24
申请号：US12407766
申请日：2009-03-19
申请人： Gaku Furuta , David Atchley , Soo Young Choi , John M. White
发明人： Gaku Furuta , David Atchley , Soo Young Choi , John M. White
IPC分类号： B01J19/08 , B21B23/00
CPC分类号： C23C16/4581
摘要： The present invention generally provides apparatus for supporting a large area substrate in a plasma reactor. One embodiment, a substrate support for using in a plasma reactor includes an electrically conductive body has a top surface with a plurality of roll-formed indents.
摘要翻译：本发明通常提供用于在等离子体反应器中支撑大面积基板的装置。一个实施例中，用于在等离子体反应器中使用的衬底支撑件包括导电体，其具有具有多个辊形凹口的顶表面。

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