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1. 发明授权

US08075952B2 Power loading substrates to reduce particle contamination 有权
标题翻译：功率负载基板以减少颗粒污染
公开(公告)号：US08075952B2
公开(公告)日：2011-12-13
申请号：US11478279
申请日：2006-06-29
申请人： Dong-Kil Yim , John M. White , Soo Young Choi , Han Byoul Kim , Jin Man Ha , Beom Soo Park
发明人： Dong-Kil Yim , John M. White , Soo Young Choi , Han Byoul Kim , Jin Man Ha , Beom Soo Park
IPC分类号： C23C16/00 , H05H1/24
CPC分类号： C23C16/4401 , C23C14/02 , C23C14/564 , C23C16/0209 , H01J2237/2001
摘要： A method for preventing particle contamination within a processing chamber is disclosed. Preheating the substrate within the processing chamber may cause a thermophoresis effect so that particles within the chamber that are not adhered to a surface may not come to rest on the substrate. One method to increase the substrate temperature is to plasma load the substrate. Plasma loading comprises providing an inert gas plasma to the substrate to heat the substrate. Another method to increase the substrate temperature is high pressure loading the substrate. High pressure loading comprises heating the substrate while increasing the chamber pressure to between about 1 Torr and about 10 Torr. By rapidly increasing the substrate temperature within the processing chamber prior to substrate processing, particle contamination is less likely to occur.
摘要翻译：公开了一种防止处理室内的颗粒污染的方法。预处理室内的衬底可能导致热泳效应，使得室内未附着于表面的颗粒可能不会停留在衬底上。增加衬底温度的一种方法是等离子体加载衬底。等离子体负载包括向衬底提供惰性气体等离子体以加热衬底。提高衬底温度的另一种方法是加载衬底的高压。高压负载包括加热衬底，同时将腔室压力提高到约1托和约10托之间。通过在基板处理之前快速增加处理室内的基板温度，不太可能发生颗粒污染。

2. 发明申请

US20080003358A1 Power loading substrates to reduce particle contamination 有权
标题翻译：功率负载基板以减少颗粒污染
公开(公告)号：US20080003358A1
公开(公告)日：2008-01-03
申请号：US11478279
申请日：2006-06-29
申请人： Dong-Kil Yim , John M. White , Soo Young Choi , Han Byoul Kim , Beom Soo Park , Jin Man Ha
发明人： Dong-Kil Yim , John M. White , Soo Young Choi , Han Byoul Kim , Beom Soo Park , Jin Man Ha
IPC分类号： C23C16/00 , H05H1/24
CPC分类号： C23C16/4401 , C23C14/02 , C23C14/564 , C23C16/0209 , H01J2237/2001
摘要： A method for preventing particle contamination within a processing chamber is disclosed. Preheating the substrate within the processing chamber may cause a thermophoresis effect so that particles within the chamber that are not adhered to a surface may not come to rest on the substrate. One method to increase the substrate temperature is to plasma load the substrate. Plasma loading comprises providing an inert gas plasma to the substrate to heat the substrate. Another method to increase the substrate temperature is high pressure loading the substrate. High pressure loading comprises heating the substrate while increasing the chamber pressure to between about 1 Torr and about 10 Torr. By rapidly increasing the substrate temperature within the processing chamber prior to substrate processing, particle contamination is less likely to occur.
摘要翻译：公开了一种防止处理室内的颗粒污染的方法。预处理室内的衬底可能引起热泳效应，使得室内未附着于表面的颗粒可能不会停留在衬底上。增加衬底温度的一种方法是等离子体加载衬底。等离子体负载包括向衬底提供惰性气体等离子体以加热衬底。提高衬底温度的另一种方法是加载衬底的高压。高压负载包括加热衬底，同时将腔室压力提高到约1托和约10托之间。通过在基板处理之前快速增加处理室内的基板温度，不太可能发生颗粒污染。

3. 发明授权

US08361549B2 Power loading substrates to reduce particle contamination 有权
标题翻译：功率负载基板以减少颗粒污染
公开(公告)号：US08361549B2
公开(公告)日：2013-01-29
申请号：US13315366
申请日：2011-12-09
申请人： Dong-Kil Yim , John M. White , Soo Young Choi , Han Byoul Kim , Jin Man Ha , Beom Soo Park
发明人： Dong-Kil Yim , John M. White , Soo Young Choi , Han Byoul Kim , Jin Man Ha , Beom Soo Park
IPC分类号： C23C16/00 , H05H1/24
CPC分类号： C23C16/4401 , C23C14/02 , C23C14/564 , C23C16/0209 , H01J2237/2001
摘要： A method for preventing particle contamination within a processing chamber is disclosed. Preheating the substrate within the processing chamber may cause a thermophoresis effect so that particles within the chamber that are not adhered to a surface may not come to rest on the substrate. One method to increase the substrate temperature is to plasma load the substrate. Plasma loading comprises providing an inert gas plasma to the substrate to heat the substrate. Another method to increase the substrate temperature is high pressure loading the substrate. High pressure loading comprises heating the substrate while increasing the chamber pressure to between about 1 Torr and about 10 Torr. By rapidly increasing the substrate temperature within the processing chamber prior to substrate processing, particle contamination is less likely to occur.
摘要翻译：公开了一种防止处理室内的颗粒污染的方法。预处理室内的衬底可能引起热泳效应，使得室内未附着于表面的颗粒可能不会停留在衬底上。增加衬底温度的一种方法是等离子体加载衬底。等离子体负载包括向衬底提供惰性气体等离子体以加热衬底。提高衬底温度的另一种方法是加载衬底的高压。高压负载包括加热衬底，同时将腔室压力提高到约1托和约10托之间。通过在基板处理之前快速增加处理室内的基板温度，不太可能发生颗粒污染。

4. 发明授权

US08430961B2 Source gas flow path control in PECVD system to control a by-product film deposition on inside chamber 有权
标题翻译： PECVD系统中的源气体流路控制，用于控制室内副产物膜沉积
公开(公告)号：US08430961B2
公开(公告)日：2013-04-30
申请号：US12205363
申请日：2008-09-05
申请人： Beom Soo Park , Young Jin Choi , Robin L. Tiner , Sam H. Kim , Soo Young Choi , John M. White , Dong-Kil Yim
发明人： Beom Soo Park , Young Jin Choi , Robin L. Tiner , Sam H. Kim , Soo Young Choi , John M. White , Dong-Kil Yim
IPC分类号： C23C16/00 , H01L21/306
CPC分类号： C23C16/45502 , C23C16/4401
摘要： The present invention generally comprises a method and an apparatus for guiding the flow of processing gases away from chamber walls and slit valve opening. By controlling the flow path of the process gases within a processing chamber, undesirable deposition upon chamber walls and within slit valve openings may be reduced. By reducing deposition in slit valve openings, flaking may be reduced. By reducing deposition on chamber walls, the time between chamber cleaning may be increased. Thus, guiding the flow of processing gases within the processing chamber may increase substrate throughput.
摘要翻译：本发明通常包括一种用于将处理气体的流动引导离开室壁和狭缝阀开口的方法和装置。通过控制处理室内的处理气体的流动路径，可以减少在室壁上和狭缝阀开口内的不期望的沉积。通过减少狭缝阀开口中的沉积，可能会降低剥落。通过减少室壁上的沉积，可以增加室清洁之间的时间。因此，引导处理室内的处理气体的流动可以增加衬底生产量。

5. 发明授权

US08372205B2 Reducing electrostatic charge by roughening the susceptor 有权
标题翻译：通过粗化基座来减少静电电荷
公开(公告)号：US08372205B2
公开(公告)日：2013-02-12
申请号：US11182168
申请日：2005-07-15
申请人： Soo Young Choi , Beom Soo Park , Quanyuan Shang , John M. White , Dong-Kil Yim , Chung-Hee Park
发明人： Soo Young Choi , Beom Soo Park , Quanyuan Shang , John M. White , Dong-Kil Yim , Chung-Hee Park
IPC分类号： H01L21/306 , C23C16/00 , C23F1/00
CPC分类号： C23C16/4581 , B24C1/06 , B24C1/10 , B24C3/322 , C23C16/4404 , C23C16/545 , C25D11/04 , C25D11/16 , C25D11/18 , H01J37/32082 , H01J37/32477 , H01J37/32559 , H01J37/32715 , H01L21/68757
摘要： A substrate support and method for fabricating the same are provided. In one embodiment of the invention, a substrate support includes an electrically conductive body having a substrate support surface that is covered by an electrically insulative coating. At least a portion of the coating centered on the substrate support surface has a surface finish of between about 200 to about 2000 micro-inches. In another embodiment, a substrate support includes an anodized aluminum body having a surface finish on the portion of the body adapted to support a substrate thereon of between about 200 to about 2000 micro-inches. In one embodiment, a substrate support assembly includes an electrically conductive body having a substrate support surface, a substrate support structure that is adapted to support the conductive body and the conductive body is covered by an electrically insulative coating.
摘要翻译：提供了一种基板支撑件及其制造方法。在本发明的一个实施例中，衬底支撑件包括具有由电绝缘涂层覆盖的衬底支撑表面的导电体。以基板支撑表面为中心的涂层的至少一部分具有介于约200至约2000微英寸之间的表面光洁度。在另一个实施例中，衬底支撑件包括阳极化铝体，其在主体部分上具有表面光洁度，其适于在其上支撑约200至约2000微英寸的衬底。在一个实施例中，衬底支撑组件包括具有衬底支撑表面的导电体，适于支撑导电体的衬底支撑结构，并且导电体被电绝缘涂层覆盖。

6. 发明授权

US08906813B2 SiOx process chemistry development using microwave plasma CVD 有权
标题翻译：使用微波等离子体CVD的SiOx工艺化学开发
公开(公告)号：US08906813B2
公开(公告)日：2014-12-09
申请号：US13886175
申请日：2013-05-02
申请人： Tae Kyung Won , Seon-Mee Cho , Soo Young Choi , Beom Soo Park , Dong-Kil Yim , John M. White , Jozef Kudela
发明人： Tae Kyung Won , Seon-Mee Cho , Soo Young Choi , Beom Soo Park , Dong-Kil Yim , John M. White , Jozef Kudela
IPC分类号： H01L21/31 , H01L21/02 , C23C16/40 , C23C16/455 , C23C16/511 , C23C16/54
CPC分类号： H01L21/0262 , C23C16/401 , C23C16/45578 , C23C16/511 , C23C16/545 , H01L21/02164 , H01L21/02211 , H01L21/02274
摘要： Methods for processing a substrate are described herein. Methods can include positioning a substrate in a processing chamber, maintaining the processing chamber at a temperature below 400° C., flowing a reactant gas comprising either a silicon hydride or a silicon halide and an oxidizing precursor into the process chamber, applying a microwave power to create a microwave plasma from the reactant gas, and depositing a silicon oxide layer on at least a portion of the exposed surface of a substrate.
摘要翻译：本文描述了用于处理衬底的方法。方法可以包括将基底定位在处理室中，将处理室保持在低于400℃的温度，使包含硅氢化物或硅卤化物的反应气体和氧化前体流入处理室，施加微波功率以从反应气体中产生微波等离子体，以及在衬底的暴露表面的至少一部分上沉积氧化硅层。

7. 发明授权

US07732010B2 Method for supporting a glass substrate to improve uniform deposition thickness 有权
标题翻译：支撑玻璃基板以改善均匀沉积厚度的方法
公开(公告)号：US07732010B2
公开(公告)日：2010-06-08
申请号：US11406136
申请日：2006-04-18
申请人： Soo Young Choi , Beom Soo Park , Quanyuan Shang , Robert I. Greene , John M. White , Dong-Kil Yim , Chung-Hee Park , Kam Law
发明人： Soo Young Choi , Beom Soo Park , Quanyuan Shang , Robert I. Greene , John M. White , Dong-Kil Yim , Chung-Hee Park , Kam Law
IPC分类号： C23C16/00
CPC分类号： H01J37/32082 , C23C16/4581 , C25D11/04 , C25D11/16 , C25D11/18
摘要： A method for supporting a glass substrate comprising providing a substrate support having an aluminum body, a substrate contact area formed on the surface of the substrate support, wherein the process of forming the substrate contact area comprises forming an anodization layer on a surface region of the aluminum body, the coating having a thickness of between about 0.3 mils and about 2.16 mils, wherein the surface region substantially corresponds to the substrate contact area, and preparing the anodization layer disposed over the surface region to a surface roughness between about 88 micro-inches and about 230 micro-inches, followed by anodizing the substrate surface to said thickness, positioning the substrate support adjacent a substrate processing region in a substrate processing chamber, wherein the substrate contact area is adjacent the substrate processing region, positioning the glass substrate on the substrate contact area.
摘要翻译：一种用于支撑玻璃基板的方法，包括提供具有铝体的基板支撑件，形成在所述基板支撑件的表面上的基板接触区域，其中形成所述基板接触区域的工艺包括在所述基板支撑件的表面区域上形成阳极氧化层铝体，所述涂层具有在约0.3密耳和约2.16密耳之间的厚度，其中所述表面区域基本上对应于所述基底接触面积，以及将所述阳极氧化层设置在所述表面区域上方的表面粗糙度在约88微英寸约230微英寸，然后将基板表面阳极化至所述厚度，将基板支撑件邻近基板处理区域定位在基板处理室中，其中基板接触区域与基板处理区域相邻，将玻璃基板定位在基板处理区域上基板接触面积。

8. 发明申请

US20090064934A1 SOURCE GAS FLOW PATH CONTROL IN PECVD SYSTEM TO CONTROL A BY-PRODUCT FILM DEPOSITION ON INSIDE CHAMBER 有权
标题翻译： PECVD系统中的源气体流路控制，用于控制室内副产物膜沉积
公开(公告)号：US20090064934A1
公开(公告)日：2009-03-12
申请号：US12205363
申请日：2008-09-05
申请人： BEOM SOO PARK , Young Jin Choi , Robin L. Tiner , Sam H. Kim , Soo Young Choi , John M. White , Dong-Kil Yim
发明人： BEOM SOO PARK , Young Jin Choi , Robin L. Tiner , Sam H. Kim , Soo Young Choi , John M. White , Dong-Kil Yim
IPC分类号： C23C16/513
CPC分类号： C23C16/45502 , C23C16/4401
摘要： The present invention generally comprises a method and an apparatus for guiding the flow of processing gases away from chamber walls and slit valve opening. By controlling the flow path of the process gases within a processing chamber, undesirable deposition upon chamber walls and within slit valve openings may be reduced. By reducing deposition in slit valve openings, flaking may be reduced. By reducing deposition on chamber walls, the time between chamber cleaning may be increased. Thus, guiding the flow of processing gases within the processing chamber may increase substrate throughput.
摘要翻译：本发明通常包括一种用于将处理气体的流动引导离开室壁和狭缝阀开口的方法和装置。通过控制处理室内的处理气体的流动路径，可以减少在室壁上和狭缝阀开口内的不期望的沉积。通过减少狭缝阀开口中的沉积，可能会降低剥落。通过减少室壁上的沉积，可以增加室清洁之间的时间。因此，引导处理室内的处理气体的流动可以增加衬底生产量。

9. 发明授权

US07292045B2 Detection and suppression of electrical arcing 有权
标题翻译：检测和抑制电弧
公开(公告)号：US07292045B2
公开(公告)日：2007-11-06
申请号：US11149896
申请日：2005-06-10
申请人： Suhail Anwar , Remegio Manacio , Chung-Hee Park , Dong-Kil Yim , Soo Young Choi
发明人： Suhail Anwar , Remegio Manacio , Chung-Hee Park , Dong-Kil Yim , Soo Young Choi
IPC分类号： G01R31/08 , G01N27/66
CPC分类号： G01R31/1254
摘要： Method and apparatus for detecting or suppressing electrical arcing or other abnormal change in the electrical impedance of a load connected to a power source. Preferably the load is a plasma chamber used for manufacturing electronic components such as semiconductors and flat panel displays. Arcing is detected by monitoring one or more sensors. Each sensor either responds to a characteristic of the electrical power being supplied by an electrical power source to the plasma or is coupled to the plasma chamber so as to respond to an electromagnetic condition within the chamber. Arcing is suppressed by reducing the power output for a brief period. Then the power source increases its power output, preferably to its original value. If the arcing resumes, the power source repeats the steps of reducing and then restoring the power output.
摘要翻译：用于检测或抑制连接到电源的负载的电阻抗的电弧或其他异常变化的方法和装置。优选地，负载是用于制造诸如半导体和平板显示器的电子部件的等离子体室。通过监视一个或多个传感器来检测电弧。每个传感器或者响应于由电源提供给等离子体的电力的特性，或者耦合到等离子体室，以便对室内的电磁条件作出响应。通过在短时间内减少功率输出来抑制电弧。然后电源增加其功率输出，最好提高到其原始值。如果电弧恢复，则电源重复减少然后恢复功率输出的步骤。

10. 发明申请

US20090315030A1 METHODS FOR FORMING AN AMORPHOUS SILICON FILM IN DISPLAY DEVICES 失效
标题翻译：在显示器件中形成非晶硅膜的方法
公开(公告)号：US20090315030A1
公开(公告)日：2009-12-24
申请号：US12486435
申请日：2009-06-17
申请人： Soo Young Choi , Jriyan Jerry Chen , Tae Kyung Won , Dong-Kil Yim
发明人： Soo Young Choi , Jriyan Jerry Chen , Tae Kyung Won , Dong-Kil Yim
IPC分类号： H01L31/0376 , H01L21/20 , H01L31/18
CPC分类号： H01L21/02532 , G02F1/1362 , G02F2001/13312 , G02F2201/58 , G06F3/0412 , G06F3/0421 , H01L21/02576 , H01L21/02579 , H01L21/02592 , H01L21/0262 , H01L27/1214 , H01L27/1446 , H01L31/022466 , H01L31/03762 , H01L31/153 , H01L31/202 , Y02E10/548
摘要： Embodiments of the present invention relate to methods for depositing an amorphous film that may be suitable for using in a NIP photodiode in display applications. In one embodiment, the method includes providing a substrate into a deposition chamber, supplying a gas mixture having a hydrogen gas to silane gas ratio by volume greater than 4 into the deposition chamber, maintaining a pressure of the gas mixture at greater than about 1 Torr in the deposition chamber, and forming an amorphous silicon film on the substrate in the presence of the gas mixture, wherein the amorphous silicon film is configured to be an intrinsic-type layer in a photodiode sensor.
摘要翻译：本发明的实施例涉及用于沉积非晶膜的方法，所述方法适用于显示器应用中的NIP光电二极管。在一个实施例中，该方法包括将衬底提供到沉积室中，将具有氢气的硅烷气体比例大于4的硅烷气体的气体混合物供应到沉积室中，将气体混合物的压力保持在大于约1托在所述沉积室中，并且在所述气体混合物的存在下在所述衬底上形成非晶硅膜，其中所述非晶硅膜被配置为光电二极管传感器中的本征型层。

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