专利快速检索-快速检索全球专利，免费商用专利数据库-IPRDB

71. 发明授权

US06741445B1 Method and system to monitor and control electro-static discharge 失效
标题翻译：监测和控制静电放电的方法和系统
公开(公告)号：US06741445B1
公开(公告)日：2004-05-25
申请号：US10050458
申请日：2002-01-16
申请人： Khoi A. Phan , Bhanwar Singh , Bharath Rangarajan , Ramkumar Subramanian
发明人： Khoi A. Phan , Bhanwar Singh , Bharath Rangarajan , Ramkumar Subramanian
IPC分类号： H01T2300
CPC分类号： H01L21/67253
摘要： A system and methodology is provided for monitoring and controlling static charge during wafer and mask fabrication. The static charge on a target device is monitored. If the static charge becomes too high, corrective actions are taken to reduce the static charge. An antistatic solution is dispensed on the target device. The system and methodology provided reduce damage resulting from electrostatic discharge during fabrication. The system and methodology also reduce delays during fabrication by automatically controlling static charge without the need for manual intervention.
摘要翻译：提供了一种用于在晶片和掩模制造期间监测和控制静电荷的系统和方法。监视目标设备上的静电荷。如果静电荷过高，则采取纠正措施减少静电。抗静电溶液分配在目标装置上。所提供的系统和方法减少了制造过程中静电放电造成的损坏。该系统和方法还通过自动控制静电而减少制造过程中的延迟，而无需人工干预。

72. 发明授权

US06724476B1 Low defect metrology approach on clean track using integrated metrology 失效
标题翻译：使用综合计量的清洁轨道的低缺陷计量方法
公开(公告)号：US06724476B1
公开(公告)日：2004-04-20
申请号：US10261756
申请日：2002-10-01
申请人： Khoi A. Phan , Bhanwar Singh , Bharath Rangarajan
发明人： Khoi A. Phan , Bhanwar Singh , Bharath Rangarajan
IPC分类号： G01N2100
CPC分类号： G01N21/9501
摘要： One aspect of the present invention relates to a system and method of monitoring for defects on a wafer before and after forming a photoresist layer on the wafer. The system includes a device fabrication system comprising one or more wafer processing system components for producing a device; a defect metrology system integrated within and on track with the fabrication system operative to inspect the wafer for defects before it proceeds to photoresist processing; and a wafer cleaning system for reducing an amount of defects detected on the front and/or back side of the wafer. If the amount of defects have been sufficiently reduced, the front side of the wafer may be coated with a photoresist. Subsequently, the back side of the wafer may be inspected and cleaned while protecting the front side from damage. Cleaning of the wafer may be performed with a thermal shock treatment, for example.
摘要翻译：本发明的一个方面涉及在晶片上形成光致抗蚀剂层之前和之后对晶片上的缺陷进行监测的系统和方法。该系统包括装置制造系统，其包括用于产生装置的一个或多个晶片处理系统部件; 在制造系统内部和轨道上集成的缺陷计量系统，其操作用于在进行光致抗蚀剂处理之前检查晶片的缺陷; 以及用于减少在晶片的前侧和/或后侧检测到的缺陷量的晶片清洁系统。如果缺陷的量已经被充分降低，则晶片的前侧可以涂覆有光致抗蚀剂。随后，可以在保护前侧免受损伤的同时检查和清洁晶片的背面。例如，可以进行热冲击处理来进行晶片的清洁。

73. 发明授权

US06702648B1 Use of scatterometry/reflectometry to measure thin film delamination during CMP 有权
标题翻译：在CMP期间使用散射/反射测量薄膜分层
公开(公告)号：US06702648B1
公开(公告)日：2004-03-09
申请号：US10277559
申请日：2002-10-22
申请人： Steven C. Avanzino , Bhanwar Singh , Bharath Rangarajan , Ramkumar Subramanian
发明人： Steven C. Avanzino , Bhanwar Singh , Bharath Rangarajan , Ramkumar Subramanian
IPC分类号： B24B4900
CPC分类号： B24B37/013 , B24B49/12
摘要： One aspect of the present invention relates to a system and method for examining a wafer for delamination in real time while polishing the wafer. The system comprises a polishing system programmed to planarize one or more film layers formed on at least a portion of a semiconductor wafer surface; a real-time metrology system coupled to the polishing system such that the metrology system examines the layers as they are planarized; and one or more delamination sensors, wherein at least a portion of each sensor is integrated into the polishing system in order to provide data to the metrology system and wherein the sensor comprises at least one optical element to detect delamination during polishing. The method involves polishing at least a portion of an uppermost film layer and examining at least a portion of a layer underlying the uppermost film layer for delamination as the uppermost layer is being polished.
摘要翻译：本发明的一个方面涉及一种用于在抛光晶片的同时检查晶片以实时分层的系统和方法。该系统包括被编程为平坦化形成在半导体晶片表面的至少一部分上的一个或多个膜层的抛光系统; 耦合到抛光系统的实时计量系统，使得计量系统在平面化时对层进行检查; 和一个或多个分层传感器，其中每个传感器的至少一部分被集成到抛光系统中，以便向计量系统提供数据，并且其中传感器包括至少一个光学元件以在抛光期间检测分层。该方法包括抛光最上面的薄膜层的至少一部分，并且在最上层被抛光时检查最上面的薄膜层下面的层的至少一部分用于分层。

74. 发明授权

US06684172B1 Sensor to predict void free films using various grating structures and characterize fill performance 失效
标题翻译：传感器预测使用各种光栅结构的无空隙膜，并表征填充性能
公开(公告)号：US06684172B1
公开(公告)日：2004-01-27
申请号：US10034165
申请日：2001-12-27
申请人： Ramkumar Subramanian , Steven C. Avanzino , Christopher F. Lyons , Khoi A. Phan , Bharath Rangarajan , Bhanwar Singh , Cyrus E. Tabery
发明人： Ramkumar Subramanian , Steven C. Avanzino , Christopher F. Lyons , Khoi A. Phan , Bharath Rangarajan , Bhanwar Singh , Cyrus E. Tabery
IPC分类号： G01L2500
CPC分类号： C23C16/52 , C23C14/547 , C23C18/1675 , C25D21/12 , H01L21/76877
摘要： One aspect of the invention relates to a metal fill process and systems therefor involving providing a standard calibration wafer having a plurality of fill features of known dimensions in a metalization tool; depositing a metal material over the standard calibration wafer; monitoring the deposition of metal material using a sensor system, the sensor system operable to measure one or more fill process parameters and to generate fill process data; controlling the deposition of metal material to minimize void formation using a control system wherein the control system receives fill process data from the sensor system and analyzes the fill process data to generate a feed-forward control data operative to control the metalization tool; and depositing metal material over a production wafer in the metalization tool using the fill process data generated by the sensor system and the control system. The invention further relates to tool characterization processes and systems therefor.
摘要翻译：本发明的一个方面涉及一种金属填充方法及其系统，其涉及在金属化工具中提供具有已知尺寸的多个填充特征的标准校准晶片; 在标准校准晶片上沉积金属材料; 使用传感器系统监测金属材料的沉积，所述传感器系统可操作以测量一个或多个填充过程参数并产生填充过程数据; 控制金属材料的沉积以最小化使用控制系统的空隙形成，其中控制系统从传感器系统接收填充过程数据并分析填充过程数据以产生可操作以控制金属化工具的前馈控制数据; 以及使用由传感器系统和控制系统产生的填充过程数据在金属化工具中的生产晶片上沉积金属材料。本发明还涉及其工具表征过程及其系统。

75. 发明授权

US06594024B1 Monitor CMP process using scatterometry 有权
标题翻译：使用散点法监测CMP过程
公开(公告)号：US06594024B1
公开(公告)日：2003-07-15
申请号：US09886863
申请日：2001-06-21
申请人： Bhanwar Singh , Ramkumar Subramanian , Khoi A. Phan , Bharath Rangarajan , Carmen Morales
发明人： Bhanwar Singh , Ramkumar Subramanian , Khoi A. Phan , Bharath Rangarajan , Carmen Morales
IPC分类号： G01B1128
CPC分类号： B24B37/005 , B24B49/12 , G01N21/47 , G01N21/9501 , H01L21/30625
摘要： One aspect of the present invention relates to an in-line system for monitoring and optimizing an on-going CMP process in order to determine a CMP process endpoint comprising a wafer, wherein the wafer is subjected to the CMP process; a CMP process monitoring system for generating a signature related to wafer dimensions for the wafer subjected to the CMP process; and a signature library to which the generated signature is compared to determine a state of the wafer. Another aspect relates to an in-line method for monitoring and optimizing an on-going CMP process involving providing a wafer, wherein the wafer is subjected to a CMP process; generating a signature associated with the wafer; comparing the generated signature to a signature library to determine a state of the wafer; and using a closed-loop feedback control system for modifying the on-going CMP process according to the determined state of the wafer.
摘要翻译：本发明的一个方面涉及用于监测和优化正在进行的CMP工艺的在线系统，以便确定包括晶片的CMP工艺端点，其中晶片经历CMP工艺; 用于生成与经历CMP处理的晶片的晶片尺寸相关的签名的CMP过程监控系统; 以及生成的签名被比较的签名库，以确定晶片的状态。另一方面涉及用于监测和优化涉及提供晶片的正在进行的CMP工艺的在线方法，其中所述晶片经受CMP工艺; 产生与晶片相关联的签名; 将生成的签名与签名库进行比较以确定晶片的状态; 以及使用闭环反馈控制系统来根据所确定的晶片状态来修正正在进行的CMP工艺。

76. 发明授权

US06448097B1 Measure fluorescence from chemical released during trim etch 失效
标题翻译：测量在修剪蚀刻期间释放的化学物质的荧光
公开(公告)号：US06448097B1
公开(公告)日：2002-09-10
申请号：US09911236
申请日：2001-07-23
申请人： Bhanwar Singh , Bharath Rangarajan , Ramkumar Subramanian
发明人： Bhanwar Singh , Bharath Rangarajan , Ramkumar Subramanian
IPC分类号： H01L3126
CPC分类号： G01N21/64 , G01N2021/6417 , H01L22/26
摘要： A system and method is provided for determining and controlling development of a semiconductor substrate employing fluorescence spectroscopy. One aspect of the invention relates to a system and method employing fluorescence spectroscopy to facilitate control of a chemical trim etch process during development of a photoresist material layer. The chemical trim etch process comprises applying a trim compound or material to a patterned photoresist. The trim compound or material is diffusable into the sides and top of the patterned resist. The diffused regions of the resist are soluble in a developer, which facilitates creating smaller features in the patterned photoresist. The fluorescence spectroscopy system can be employed to measure isolated and dense gratings or CDs and use the evolution of the CD to determine when to terminate the chemical trim process.
摘要翻译：提供了一种使用荧光光谱法确定和控制半导体衬底的开发的系统和方法。本发明的一个方面涉及使用荧光光谱学来促进在光致抗蚀剂材料层的显影期间控制化学修剪蚀刻工艺的系统和方法。化学修剪蚀刻工艺包括将修剪化合物或材料施加到图案化的光致抗蚀剂上。修整组合物或材料可扩散到图案化抗蚀剂的侧面和顶部。抗蚀剂的扩散区域可溶于显影剂，这有助于在图案化的光致抗蚀剂中产生更小的特征。荧光光谱系统可用于测量孤立和致密的光栅或CD，并使用CD的演变来确定何时终止化学修饰过程。

77. 发明授权

US06322009B1 Common nozzle for resist development 有权
标题翻译：普通喷嘴用于抗蚀剂开发
公开(公告)号：US06322009B1
公开(公告)日：2001-11-27
申请号：US09429992
申请日：1999-10-29
申请人： Ramkumar Subramanian , Khoi A. Phan , Bharath Rangarajan , Bhanwar Singh
发明人： Ramkumar Subramanian , Khoi A. Phan , Bharath Rangarajan , Bhanwar Singh
IPC分类号： B05B900
CPC分类号： H01L21/6708 , H01L21/67051
摘要： A combination nozzle for applying a developer material and a washing solution material at different time intervals to a photoresist material layer disposed on a wafer is provided. The combination nozzle includes a number of developer nozzle tips connected to a developer supply line and a number of washing solution nozzle tips connected to a washing solution supply line. The developer supply line and the washing solution supply line ensure that the developer material and the washing solution material are always substantially isolated from one another. Furthermore, the developer nozzle tips and the washing solution nozzle tips are arranged so that developer material and washing solution material do not come into contact with one another. The volume of the material and the volume flow of the material can be controlled by electronically controlled valves.
摘要翻译：提供了用于将显影剂材料和洗涤液材料以不同的时间间隔施加到设置在晶片上的光致抗蚀剂材料层的组合喷嘴。组合喷嘴包括连接到显影剂供应管线的多个显影剂喷嘴尖端和连接到洗涤溶液供应管线的多个洗涤溶液喷嘴尖端。显影剂供应管线和洗涤溶液供应管线确保显影剂材料和洗涤液材料总是基本上彼此隔离。此外，显影剂喷嘴尖端和洗涤溶液喷嘴尖端被布置成使得显影剂材料和洗涤液材料彼此不接触。材料的体积和材料的体积流量可以通过电子控制阀来控制。

78. 发明授权

US06221777B1 Reverse lithographic process for semiconductor vias 有权
标题翻译：半导体通孔反向光刻工艺
公开(公告)号：US06221777B1
公开(公告)日：2001-04-24
申请号：US09329154
申请日：1999-06-09
申请人： Bhanwar Singh , Bharath Rangarajan , Ursula Q. Quinto
发明人： Bhanwar Singh , Bharath Rangarajan , Ursula Q. Quinto
IPC分类号： H01L2100
CPC分类号： H01L27/11521 , H01L21/76802 , H01L21/76816
摘要： A reverse lithographic process is provided for more densely packing semiconductors onto a semiconductor wafer. A semiconductor wafer having a dielectric covered semiconductor device has a photoresist deposited which is patterned with vias in closely packed rows and columns. The resist is developed and trimmed to form via photoresist structures. A non-photosensitive polymer is deposited over the via photoresist structures and, when hardened, is subject to planarizing to expose the via photoresist structures. The via photoresist structures are removed and leave a reverse image patterned polymer. The photoresist is removed leaving the reverse image patterned polymer, which is then used to etch the dielectric to form vias to the semiconductor device.
摘要翻译：提供反向光刻工艺用于在半导体晶片上更密集地堆叠半导体。具有电介质覆盖的半导体器件的半导体晶片具有沉积的光致抗蚀剂，其以紧密堆积的行和列形成通孔。抗蚀剂被显影和修整以通过光致抗蚀剂结构形成。非光敏聚合物沉积在通孔光致抗蚀剂结构上，并且当硬化时，进行平面化以暴露通孔光致抗蚀剂结构。去除通孔光致抗蚀剂结构并留下反向图案图案化的聚合物。除去光致抗蚀剂留下反向图案图案化的聚合物，然后将其用于蚀刻电介质以形成到半导体器件的通孔。

79. 发明授权

US6063531A Focus monitor structure and method for lithography process 失效
标题翻译：光刻工艺的聚焦监视器结构和方法
公开(公告)号：US6063531A
公开(公告)日：2000-05-16
申请号：US167417
申请日：1998-10-06
申请人： Bhanwar Singh , Bharath Rangarajan , Khoi Anh Phan , Carmen L. Morales
发明人： Bhanwar Singh , Bharath Rangarajan , Khoi Anh Phan , Carmen L. Morales
IPC分类号： G03F7/20 , G03F9/02 , G03F9/00
CPC分类号： G03F7/70625 , G03F7/70641
摘要： A focus monitor structure is placed on a reticle or mask near the production device structures, such as integrated circuits, to monitor the focal conditions of the lithography process as well as other parameters, such as the critical dimension, and proximity effects. The focus monitor structure includes a series of densely packed parallel lines and an isolated line along with a line that is positioned orthogonally to the densely packed lines forming an "L" shaped structure. The focus monitor structure also includes a plurality of rectangular islands that create post structures when patterned in the resist layer. The lines of the focus monitor structure are approximately the critical dimension and the rectangular islands vary in width between .+-.10% of the critical dimension. By manually or automatically inspecting the focus monitor structure after it is patterned into a layer of resist, including measuring the width of the resist lines and the resist profile angle of the orthogonal line, information relating to the critical dimension as well as the focal conditions of the lithography process can be determined.
摘要翻译：将聚焦监视器结构放置在生产设备结构（例如集成电路）附近的掩模版或掩模上，以监视光刻工艺的焦点状况以及其他参数，例如临界尺寸和邻近效应。聚焦监视器结构包括一系列密集的平行线和一条隔离的线以及一条线，该线与形成“L”形结构的密集线相正交。聚焦监视器结构还包括当在抗蚀剂层中图案化时产生柱结构的多个矩形岛。聚焦监视器结构的线条大致是临界尺寸，矩形岛的宽度在临界尺寸的+/- 10％之间变化。在聚焦监视器结构被图案化成抗蚀剂层之后，通过手动或自动地检查聚焦监视器结构，包括测量抗蚀剂线的宽度和正交线的抗蚀剂轮廓角，与关键尺寸以及焦点监视结构的焦点条件可以确定光刻工艺。

80. 发明授权

US07224456B1 In-situ defect monitor and control system for immersion medium in immersion lithography 有权
标题翻译：浸没式光刻浸渍介质的原位缺陷监测和控制系统
公开(公告)号：US07224456B1
公开(公告)日：2007-05-29
申请号：US10858759
申请日：2004-06-02
申请人： Khoi Phan , Bhanwar Singh , Bharath Rangarajan , Ramkumar Subramanian
发明人： Khoi Phan , Bhanwar Singh , Bharath Rangarajan , Ramkumar Subramanian
IPC分类号： G01N15/02
CPC分类号： G01N21/47 , G01N2015/0011 , G03F7/70341
摘要： A system and method for detecting bubbles in a lithographic immersion medium and for controlling a lithographic process based at least in part on the detection of bubbles is provided. A bubble monitoring component emits an incident beam that passes through the immersion medium and is incident upon a substrate to produce a reflected and/or diffracted beam(s). The reflected and/or diffracted beam(s) is received by one or more optical detectors. The presence or absence of bubbles can be derived from information extracted by scatterometry from the reflected and/or diffracted beams. A process control component interacts with a positioning component and an optical exposure component to alter a lithographic process based at least in part on the results of the scatterometry.
摘要翻译：提供了一种用于在光刻浸渍介质中检测气泡并且至少部分地基于气泡检测来控制光刻工艺的系统和方法。气泡监测部件发射穿过浸没介质并入射到基板上以产生反射和/或衍射光束的入射光束。反射和/或衍射光束被一个或多个光学检测器接收。可以通过从反射和/或衍射光束散射法提取的信息导出气泡的存在或不存在。过程控制部件与定位部件和光学曝光部件相互作用，以至少部分地基于散射测量的结果来改变光刻工艺。

你已经成功收藏专利！

检索式保存成功!

IPRDB

热门服务

关于我们

友情链接

联系方式