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1. 发明授权

US07158896B1 Real time immersion medium control using scatterometry 失效
标题翻译：实时浸入介质控制采用散射法
公开(公告)号：US07158896B1
公开(公告)日：2007-01-02
申请号：US10978604
申请日：2004-11-01
申请人： Bhanwar Singh , Srikanteswara Dakshina-Murthy , Khoi A. Phan , Ramkumar Subramanian , Bharath Rangarajan , Iraj Emami
发明人： Bhanwar Singh , Srikanteswara Dakshina-Murthy , Khoi A. Phan , Ramkumar Subramanian , Bharath Rangarajan , Iraj Emami
IPC分类号： G06F19/00
CPC分类号： G03F7/70916 , G03F7/2041 , G03F7/70341
摘要： Systems and/or methods are disclosed for measuring and/or controlling an amount of impurity that is dissolved within an immersion medium employed with immersion lithography. The impurity can be photoresist from a photoresist layer coated upon a substrate surface. A known grating structure is built upon the substrate. A real time immersion medium monitoring component facilitates measuring and/or controlling the amount of impurities dissolved within the immersion medium by utilizing light scattered from the known grating structure.
摘要翻译：公开了用于测量和/或控制溶解在浸入式光刻中使用的浸渍介质中的杂质量的系统和/或方法。杂质可以是来自涂覆在基材表面上的光致抗蚀剂层的光致抗蚀剂。已知的光栅结构被构建在衬底上。实时浸没介质监测部件通过利用从已知光栅结构散射的光来便于测量和/或控制溶解在浸没介质中的杂质的量。

2. 发明授权

US07001830B2 System and method of pattern recognition and metrology structure for an X-initiative layout design 失效
标题翻译：用于X主动布局设计的模式识别和计量结构的系统和方法
公开(公告)号：US07001830B2
公开(公告)日：2006-02-21
申请号：US10653309
申请日：2003-09-02
申请人： Khoi A. Phan , Bharath Rangarajan , Bhanwar Singh
发明人： Khoi A. Phan , Bharath Rangarajan , Bhanwar Singh
IPC分类号： H01L21/20 , H01L21/36
CPC分类号： G03F7/70625 , G03F7/70633 , G03F9/7076 , Y10S438/975
摘要： The present invention relates to inspection methods and systems utilized to provide a best means for inspection of a wafer. The methods and systems include wafer-to-reticle alignment, layer-to-layer alignment and wafer surface feature inspection. The wafer-to-reticle alignment is improved by the addition of diagonal lines to existing alignment marks to decrease the intersection size and corresponding area that a desired point can reside. Layer-to-layer alignment is improved in a similar manner by the addition of oblique and/or non-linear line segments to existing overlay targets. Also, providing for wafer surface inspection in a multitude of desired diagonal axes allows for more accurate feature measurement.
摘要翻译：本发明涉及用于提供用于检查晶片的最佳方法的检查方法和系统。该方法和系统包括晶片到标线片对准，层间对准和晶片表面特征检查。通过将对角线添加到现有的对准标记来减小交叉点大小和期望点可以驻留的对应区域来改善晶片到标线阵列对准。通过向现有覆盖目标添加倾斜和/或非线性线段，以类似的方式改善了层间对齐。此外，在多个所需的对角轴中提供晶片表面检查允许更精确的特征测量。

3. 发明授权

US06741445B1 Method and system to monitor and control electro-static discharge 失效
标题翻译：监测和控制静电放电的方法和系统
公开(公告)号：US06741445B1
公开(公告)日：2004-05-25
申请号：US10050458
申请日：2002-01-16
申请人： Khoi A. Phan , Bhanwar Singh , Bharath Rangarajan , Ramkumar Subramanian
发明人： Khoi A. Phan , Bhanwar Singh , Bharath Rangarajan , Ramkumar Subramanian
IPC分类号： H01T2300
CPC分类号： H01L21/67253
摘要： A system and methodology is provided for monitoring and controlling static charge during wafer and mask fabrication. The static charge on a target device is monitored. If the static charge becomes too high, corrective actions are taken to reduce the static charge. An antistatic solution is dispensed on the target device. The system and methodology provided reduce damage resulting from electrostatic discharge during fabrication. The system and methodology also reduce delays during fabrication by automatically controlling static charge without the need for manual intervention.
摘要翻译：提供了一种用于在晶片和掩模制造期间监测和控制静电荷的系统和方法。监视目标设备上的静电荷。如果静电荷过高，则采取纠正措施减少静电。抗静电溶液分配在目标装置上。所提供的系统和方法减少了制造过程中静电放电造成的损坏。该系统和方法还通过自动控制静电而减少制造过程中的延迟，而无需人工干预。

4. 发明授权

US06724476B1 Low defect metrology approach on clean track using integrated metrology 失效
标题翻译：使用综合计量的清洁轨道的低缺陷计量方法
公开(公告)号：US06724476B1
公开(公告)日：2004-04-20
申请号：US10261756
申请日：2002-10-01
申请人： Khoi A. Phan , Bhanwar Singh , Bharath Rangarajan
发明人： Khoi A. Phan , Bhanwar Singh , Bharath Rangarajan
IPC分类号： G01N2100
CPC分类号： G01N21/9501
摘要： One aspect of the present invention relates to a system and method of monitoring for defects on a wafer before and after forming a photoresist layer on the wafer. The system includes a device fabrication system comprising one or more wafer processing system components for producing a device; a defect metrology system integrated within and on track with the fabrication system operative to inspect the wafer for defects before it proceeds to photoresist processing; and a wafer cleaning system for reducing an amount of defects detected on the front and/or back side of the wafer. If the amount of defects have been sufficiently reduced, the front side of the wafer may be coated with a photoresist. Subsequently, the back side of the wafer may be inspected and cleaned while protecting the front side from damage. Cleaning of the wafer may be performed with a thermal shock treatment, for example.
摘要翻译：本发明的一个方面涉及在晶片上形成光致抗蚀剂层之前和之后对晶片上的缺陷进行监测的系统和方法。该系统包括装置制造系统，其包括用于产生装置的一个或多个晶片处理系统部件; 在制造系统内部和轨道上集成的缺陷计量系统，其操作用于在进行光致抗蚀剂处理之前检查晶片的缺陷; 以及用于减少在晶片的前侧和/或后侧检测到的缺陷量的晶片清洁系统。如果缺陷的量已经被充分降低，则晶片的前侧可以涂覆有光致抗蚀剂。随后，可以在保护前侧免受损伤的同时检查和清洁晶片的背面。例如，可以进行热冲击处理来进行晶片的清洁。

5. 发明授权

US06684172B1 Sensor to predict void free films using various grating structures and characterize fill performance 失效
标题翻译：传感器预测使用各种光栅结构的无空隙膜，并表征填充性能
公开(公告)号：US06684172B1
公开(公告)日：2004-01-27
申请号：US10034165
申请日：2001-12-27
申请人： Ramkumar Subramanian , Steven C. Avanzino , Christopher F. Lyons , Khoi A. Phan , Bharath Rangarajan , Bhanwar Singh , Cyrus E. Tabery
发明人： Ramkumar Subramanian , Steven C. Avanzino , Christopher F. Lyons , Khoi A. Phan , Bharath Rangarajan , Bhanwar Singh , Cyrus E. Tabery
IPC分类号： G01L2500
CPC分类号： C23C16/52 , C23C14/547 , C23C18/1675 , C25D21/12 , H01L21/76877
摘要： One aspect of the invention relates to a metal fill process and systems therefor involving providing a standard calibration wafer having a plurality of fill features of known dimensions in a metalization tool; depositing a metal material over the standard calibration wafer; monitoring the deposition of metal material using a sensor system, the sensor system operable to measure one or more fill process parameters and to generate fill process data; controlling the deposition of metal material to minimize void formation using a control system wherein the control system receives fill process data from the sensor system and analyzes the fill process data to generate a feed-forward control data operative to control the metalization tool; and depositing metal material over a production wafer in the metalization tool using the fill process data generated by the sensor system and the control system. The invention further relates to tool characterization processes and systems therefor.
摘要翻译：本发明的一个方面涉及一种金属填充方法及其系统，其涉及在金属化工具中提供具有已知尺寸的多个填充特征的标准校准晶片; 在标准校准晶片上沉积金属材料; 使用传感器系统监测金属材料的沉积，所述传感器系统可操作以测量一个或多个填充过程参数并产生填充过程数据; 控制金属材料的沉积以最小化使用控制系统的空隙形成，其中控制系统从传感器系统接收填充过程数据并分析填充过程数据以产生可操作以控制金属化工具的前馈控制数据; 以及使用由传感器系统和控制系统产生的填充过程数据在金属化工具中的生产晶片上沉积金属材料。本发明还涉及其工具表征过程及其系统。

6. 发明授权

US06594024B1 Monitor CMP process using scatterometry 有权
标题翻译：使用散点法监测CMP过程
公开(公告)号：US06594024B1
公开(公告)日：2003-07-15
申请号：US09886863
申请日：2001-06-21
申请人： Bhanwar Singh , Ramkumar Subramanian , Khoi A. Phan , Bharath Rangarajan , Carmen Morales
发明人： Bhanwar Singh , Ramkumar Subramanian , Khoi A. Phan , Bharath Rangarajan , Carmen Morales
IPC分类号： G01B1128
CPC分类号： B24B37/005 , B24B49/12 , G01N21/47 , G01N21/9501 , H01L21/30625
摘要： One aspect of the present invention relates to an in-line system for monitoring and optimizing an on-going CMP process in order to determine a CMP process endpoint comprising a wafer, wherein the wafer is subjected to the CMP process; a CMP process monitoring system for generating a signature related to wafer dimensions for the wafer subjected to the CMP process; and a signature library to which the generated signature is compared to determine a state of the wafer. Another aspect relates to an in-line method for monitoring and optimizing an on-going CMP process involving providing a wafer, wherein the wafer is subjected to a CMP process; generating a signature associated with the wafer; comparing the generated signature to a signature library to determine a state of the wafer; and using a closed-loop feedback control system for modifying the on-going CMP process according to the determined state of the wafer.
摘要翻译：本发明的一个方面涉及用于监测和优化正在进行的CMP工艺的在线系统，以便确定包括晶片的CMP工艺端点，其中晶片经历CMP工艺; 用于生成与经历CMP处理的晶片的晶片尺寸相关的签名的CMP过程监控系统; 以及生成的签名被比较的签名库，以确定晶片的状态。另一方面涉及用于监测和优化涉及提供晶片的正在进行的CMP工艺的在线方法，其中所述晶片经受CMP工艺; 产生与晶片相关联的签名; 将生成的签名与签名库进行比较以确定晶片的状态; 以及使用闭环反馈控制系统来根据所确定的晶片状态来修正正在进行的CMP工艺。

7. 发明授权

US06556303B1 Scattered signal collection using strobed technique 有权
标题翻译：使用频闪技术分散信号采集
公开(公告)号：US06556303B1
公开(公告)日：2003-04-29
申请号：US09902366
申请日：2001-07-10
申请人： Bharath Rangarajan , Michael K. Templeton , Bhanwar Singh , Khoi A. Phan
发明人： Bharath Rangarajan , Michael K. Templeton , Bhanwar Singh , Khoi A. Phan
IPC分类号： G01B1114
CPC分类号： G01B11/0683 , G01B11/0625 , H01L22/12
摘要： The present invention is directed to a system and a method for controlling a thin film formation on a moving substrate as part of a process for manufacturing an integrated circuit. The invention involves the use of scatterometry to control the thin film formation process by analyzing the thin film on the moving substrate in a periodic manner. A registration feature associated with the moving substrate can be utilized in conjunction with a signaling system to determine a position of the moving substrate, whereby a repeatable analysis of a corresponding location on the moving substrate can be performed. Scatterometry permits in-situ measurements of thin film formation progress, whereby thin film formation process conditions can be controlled in a feedback loop to obtain a targeted result. Scatterometry can also be facilitated by providing a grating pattern on a non-production portion of the substrate.
摘要翻译：本发明涉及一种用于控制移动衬底上的薄膜形成的系统和方法，作为用于制造集成电路的工艺的一部分。本发明涉及使用散射法来以周期性方式分析移动基片上的薄膜来控制薄膜形成过程。与移动基板相关联的配准特征可以与信号系统结合使用，以确定移动基板的位置，由此可以执行移动基板上对应位置的可重复分析。散射测量允许原位测量薄膜形成进程，由此可以在反馈回路中控制薄膜形成工艺条件以获得目标结果。也可以通过在基板的非生产部分上提供光栅图案来促进散射测量。

8. 发明授权

US06444381B1 Electron beam flood exposure technique to reduce the carbon contamination 有权
标题翻译：电子束泛滥技术减少碳污染
公开(公告)号：US06444381B1
公开(公告)日：2002-09-03
申请号：US09729295
申请日：2000-12-04
申请人： Bhanwar Singh , Ramkumar Subramanian , Michael K. Templeton , Bharath Rangarajan , Khoi A. Phan , Bryan K. Choo , Sanjay K. Yedur
发明人： Bhanwar Singh , Ramkumar Subramanian , Michael K. Templeton , Bharath Rangarajan , Khoi A. Phan , Bryan K. Choo , Sanjay K. Yedur
IPC分类号： G03F900
CPC分类号： G03F1/74 , Y10S430/143
摘要： One aspect of the present invention relates to a method for reducing carbon contamination on a mask involving placing a mask plate having carbon-containing contaminants thereon in a processing chamber; simultaneously contacting the mask plate with oxygen and exposing the mask plate with a flood exposure of electron beams wherein the carbon-containing contaminants are converted to a by-product; and removing the by-product from the processing chamber.
摘要翻译：本发明的一个方面涉及一种用于减少掩模上的碳污染的方法，其涉及将具有含碳污染物的掩模板放置在处理室中; 同时使掩模板与氧气接触，并将电子束的暴露暴露于掩模板，其中含碳污染物转化为副产物; 并从处理室中除去副产物。

9. 发明授权

US06322009B1 Common nozzle for resist development 有权
标题翻译：普通喷嘴用于抗蚀剂开发
公开(公告)号：US06322009B1
公开(公告)日：2001-11-27
申请号：US09429992
申请日：1999-10-29
申请人： Ramkumar Subramanian , Khoi A. Phan , Bharath Rangarajan , Bhanwar Singh
发明人： Ramkumar Subramanian , Khoi A. Phan , Bharath Rangarajan , Bhanwar Singh
IPC分类号： B05B900
CPC分类号： H01L21/6708 , H01L21/67051
摘要： A combination nozzle for applying a developer material and a washing solution material at different time intervals to a photoresist material layer disposed on a wafer is provided. The combination nozzle includes a number of developer nozzle tips connected to a developer supply line and a number of washing solution nozzle tips connected to a washing solution supply line. The developer supply line and the washing solution supply line ensure that the developer material and the washing solution material are always substantially isolated from one another. Furthermore, the developer nozzle tips and the washing solution nozzle tips are arranged so that developer material and washing solution material do not come into contact with one another. The volume of the material and the volume flow of the material can be controlled by electronically controlled valves.
摘要翻译：提供了用于将显影剂材料和洗涤液材料以不同的时间间隔施加到设置在晶片上的光致抗蚀剂材料层的组合喷嘴。组合喷嘴包括连接到显影剂供应管线的多个显影剂喷嘴尖端和连接到洗涤溶液供应管线的多个洗涤溶液喷嘴尖端。显影剂供应管线和洗涤溶液供应管线确保显影剂材料和洗涤液材料总是基本上彼此隔离。此外，显影剂喷嘴尖端和洗涤溶液喷嘴尖端被布置成使得显影剂材料和洗涤液材料彼此不接触。材料的体积和材料的体积流量可以通过电子控制阀来控制。

10. 发明授权

US06999254B1 Refractive index system monitor and control for immersion lithography 有权
$Refractive index system monitor and control for immersion lithography$
标题翻译：折射率系统监测和控制浸没光刻
公开(公告)号：US06999254B1
公开(公告)日：2006-02-14
申请号：US10967845
申请日：2004-10-18
申请人： Khoi A. Phan , Bharath Rangarajan , Bhanwar Singh , Ramkumar Subramanian
发明人： Khoi A. Phan , Bharath Rangarajan , Bhanwar Singh , Ramkumar Subramanian
IPC分类号： G02B7/00
CPC分类号： G03F7/70341
摘要： A system and/or method are disclosed for measuring and/or controlling refractive index (n) and/or lithographic constant (k) of an immersion medium utilized in connection with immersion lithography. A known grating structure is built upon a substrate. A refractive index monitoring component facilitates measuring and/or controlling the immersion medium by utilizing detected light scattered from the known grating structure.
摘要翻译：公开了用于测量和/或控制与浸没式光刻相关联的浸渍介质的折射率（n）和/或光刻常数（k）的系统和/或方法。已知的光栅结构被构建在衬底上。折射率监测部件通过利用从已知光栅结构散射的检测光，便于测量和/或控制浸没介质。

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