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71. 发明授权

US5746875A Gas injection slit nozzle for a plasma process reactor 失效
标题翻译：用于等离子体处理反应器的气体注入狭缝喷嘴
公开(公告)号：US5746875A
公开(公告)日：1998-05-05
申请号：US551881
申请日：1995-10-16
申请人： Dan Maydan , Steve S. Y. Mak , Donald Olgado , Gerald Zheyao Yin , Timothy D. Driscoll , James S. Papanu , Avi Tepman
发明人： Dan Maydan , Steve S. Y. Mak , Donald Olgado , Gerald Zheyao Yin , Timothy D. Driscoll , James S. Papanu , Avi Tepman
IPC分类号： H05H1/46 , C23C16/44 , C23C16/455 , C23F4/00 , H01J37/32 , H01L21/302 , H01L21/3065 , H05H1/42 , H05H1/00
CPC分类号： C23C16/45574 , C23C16/45576 , C23C16/45587 , H01J37/3244 , H01J37/32449
摘要： The invention is embodied in a gas injection apparatus for injecting gases into a plasma reactor vacuum chamber having a chamber housing, a pedestal holding a workpiece to be processed, a device for applying RF energy into the chamber, the gas injection apparatus having a gas supply containing an etchant species in a gas, an opening in the chamber housing, a gas distribution apparatus disposed within the opening in the chamber housing which has at least one slotted aperture facing the interior of the chamber and a device for controlling the flow rate of gas from the one or more slotted apertures, and a gas feed line from the supply to the gas distribution apparatus. In a preferred embodiment, the gas distribution apparatus includes a center member surrounded by at least one annular member with a gap therebetween comprising the slotted aperture. Preferably, each of the members of the gas distribution apparatus comprises a material at least nearly impervious to attack from the etchant species. In one example, each of the members of the gas distribution apparatus comprises one of a ceramic, fused quartz, polymeric or anodized aluminum material and the gas feed line comprises stainless steel. Preferably, each of the members has its surface polished prior to assembly of the gas distribution apparatus.
摘要翻译：本发明体现在一种用于将气体注入等离子体反应器真空室中的气体注入装置，其具有腔室壳体，保持要加工的工件的基座，用于将RF能量施加到腔室中的装置，该气体注入装置具有气体供应在气体中含有蚀刻剂物质，在腔室中的开口，设置在腔室中的开口内的气体分配装置，其具有面向腔室内部的至少一个开口孔，以及用于控制气体流速的装置从一个或多个开槽孔，以及从供给到气体分配装置的气体供给管线。在优选实施例中，气体分配装置包括由至少一个环形构件包围的中心构件，其间具有间隙，包括开槽孔。优选地，气体分配装置的每个构件包括至少几乎不受蚀刻剂物质侵蚀的材料。在一个示例中，气体分配装置的每个构件包括陶瓷，熔融石英，聚合物或阳极氧化铝材料中的一种，气体供给管线包括不锈钢。优选地，每个构件在气体分配装置的组装之前具有其表面抛光。

72. 发明授权

US5380566A Method of limiting sticking of body to susceptor in a deposition treatment 失效
标题翻译：在沉积处理中限制身体对感受器的粘附的方法
公开(公告)号：US5380566A
公开(公告)日：1995-01-10
申请号：US080018
申请日：1993-06-21
申请人： Robert Robertson , Marc M. Kollrack , Angela T. Lee , Kam Law , Dan Maydan
发明人： Robert Robertson , Marc M. Kollrack , Angela T. Lee , Kam Law , Dan Maydan
IPC分类号： C23C16/50 , C23C16/509 , C23C16/56 , B05D3/06
CPC分类号： C23C16/56 , C23C16/509
摘要： A method of limiting sticking of a body (substrate) to a susceptor after the body has been coated with a layer in a deposition chamber by plasma chemical vapor deposition includes subjecting the coated body to a plasma of an inactive gas, e.g., hydrogen, nitrogen, argon or ammonia, which does not adversely affect the coating and does not add additional layers to the body. After the coated body is subjected to the plasma of the inactive gas, the body is separated from the susceptor.
摘要翻译：在通过等离子体化学气相沉积在体积已经在沉积室中涂覆了层之后，将体（衬底）粘附到基座上的方法包括使涂覆体经受惰性气体例如氢气，氮气等离子体，氩或氨，其不会对涂层产生不利影响，并且不向身体添加额外的层。在涂覆体经受惰性气体的等离子体之后，主体与基座分离。

73. 发明授权

US5280983A Semiconductor processing system with robotic autoloader and load lock 失效
标题翻译：带有机器人自动装载机和加载锁的半导体处理系统
公开(公告)号：US5280983A
公开(公告)日：1994-01-25
申请号：US963006
申请日：1992-10-19
申请人： Dan Maydan , Sasson R. Somekh , Charles Ryan-Harris , Richard A. Seilheimer , David Cheng , Edward M. Abolnikov , Lance S. Reinke , J. Christopher Moran , Richard M. Catlin, Jr. , Robert B. Lowrance , Gregory W. Ridgeway
发明人： Dan Maydan , Sasson R. Somekh , Charles Ryan-Harris , Richard A. Seilheimer , David Cheng , Edward M. Abolnikov , Lance S. Reinke , J. Christopher Moran , Richard M. Catlin, Jr. , Robert B. Lowrance , Gregory W. Ridgeway
IPC分类号： H01L21/67 , H02H9/00 , H05K13/02 , B66C1/42
CPC分类号： H05K13/021 , H01L21/67 , H02H9/005 , Y10S294/902
摘要： A wafer processing system includes an autoloader mounted within a load lock for providing batch, cassette-to-cassette automatic wafer transfer between the semiconductor processing chamber and cassette load and unload positions within the load lock. The system provides rapid, contamination-free loading and unloading of semiconductor wafers.
摘要翻译：晶片处理系统包括安装在负载锁中的自动装载机，用于在半导体处理室和装载锁之间的卸载位置之间提供批处理，盒到盒自动晶片传送。该系统提供快速，无污染的半导体晶片装载和卸载。

74. 发明授权

US5224809A Semiconductor processing system with robotic autoloader and load lock 失效
标题翻译：带有机器人自动装载机和加载锁的半导体处理系统
公开(公告)号：US5224809A
公开(公告)日：1993-07-06
申请号：US816525
申请日：1991-12-30
申请人： Dan Maydan , Sasson R. Somekh , Charles Ryan-Harris , Richard A. Seilheimer , David Cheng , Edward M. Abolnikov , Lance S. Reinke , J. Christopher Moran , Richard M. Catlin, Jr. , Robert B. Lowrance , Gregory W. Ridgeway
发明人： Dan Maydan , Sasson R. Somekh , Charles Ryan-Harris , Richard A. Seilheimer , David Cheng , Edward M. Abolnikov , Lance S. Reinke , J. Christopher Moran , Richard M. Catlin, Jr. , Robert B. Lowrance , Gregory W. Ridgeway
IPC分类号： B65G49/07 , H01L21/67 , H05K13/02
CPC分类号： H01L21/67 , H05K13/021 , Y10S414/13
摘要： A wafer processing system includes an autoloader mounted within a load lock for providing batch, cassette-to-cassette automatic wafer transfer between the semiconductor processing chamber and cassette load and unload positions within the load lock. The system provides rapid, contamination-free loading and unloading of semiconductor wafers.
摘要翻译：晶片处理系统包括安装在负载锁中的自动装载机，用于在半导体处理室和装载锁之间的卸载位置之间提供批处理，盒到盒自动晶片传送。该系统提供快速，无污染的半导体晶片装载和卸载。

75. 发明授权

US5215619A Magnetic field-enhanced plasma etch reactor 失效
标题翻译：磁场增强等离子体蚀刻反应器
公开(公告)号：US5215619A
公开(公告)日：1993-06-01
申请号：US760848
申请日：1991-09-17
申请人： David Cheng , Dan Maydan , Sasson Somekh , Kenneth R. Stalder , Dana L. Andrews , Mei Chang , John M. White , Jerry Y. K. Wong , Vladimir J. Zeitlin , David N. Wang
发明人： David Cheng , Dan Maydan , Sasson Somekh , Kenneth R. Stalder , Dana L. Andrews , Mei Chang , John M. White , Jerry Y. K. Wong , Vladimir J. Zeitlin , David N. Wang
IPC分类号： H01J37/32 , H01L21/00
CPC分类号： H01L21/67069 , H01J37/32477 , H01J37/32623 , H01J37/32743 , H01J37/32862
摘要： A magnetic field enhanced single wafer plasma etch reactor is disclosed. The features of the reactor include an electrically-controlled stepped magnetic field for providing high rate uniform etching at high pressures; temperature controlled reactor surfaces including heated anode surfaces (walls and gas manifold) and a cooled wafer supporting cathode; and a unitary wafer exchange mechanism comprising wafer lift pins which extend through the pedestal and a wafer clamp ring. The lift pins and clamp ring are moved vertically by a one-axis lift mechanism to accept the wafer from a cooperating external robot blade, clamp the wafer to the pedestal and return the wafer to the blade. The electrode cooling combines water cooling for the body of the electrode and a thermal conductivity-enhancing gas parallel-bowed interface between the wafer and electrode for keeping the wafer surface cooled despite the high power densities applied to the electrode. A gas feed-through device applies the cooling gas to the RF powered electrode without breakdown of the gas. Protective coatings/layers of materials such as quartz are provided for surfaces such as the clamp ring and gas manifold. The combination of these features provides a wide pressure regime, high etch rate, high throughput single wafer etcher which provides uniformity, directionality and selectivity at high gas pressures, operates cleanly and incorporates in-situ self-cleaning capability.
摘要翻译：公开了一种磁场增强型单晶片等离子体蚀刻反应器。反应器的特征包括用于在高压下提供高速均匀蚀刻的电控步进磁场; 温度控制的反应器表面包括加热的阳极表面（壁和气体歧管）和冷却的晶片支撑阴极; 以及包括延伸穿过基座的晶片提升销和晶片夹紧环的整体晶片交换机构。提升销和夹紧环通过单轴提升机构垂直移动，以从协作的外部机器人刀片接收晶片，将晶片夹紧到基座并将晶片返回到刀片。电极冷却结合了用于电极体的水冷却和晶片和电极之间的热导率增强气体平行弓形界面，用于保持晶片表面冷却，尽管施加到电极的高功率密度。气体馈通装置将冷却气体施加到RF供电的电极，而不会破坏气体。为诸如夹紧环和气体歧管的表面提供保护涂层/诸如石英的材料层。这些特征的组合提供了广泛的压力方案，高蚀刻速率，高通量单晶硅蚀刻器，其在高气体压力下提供均匀性，方向性和选择性，干净地操作并且并入现场自清洁能力。

76. 发明授权

US5186718A Staged-vacuum wafer processing system and method 失效
标题翻译：分级真空晶圆加工系统及方法
公开(公告)号：US5186718A
公开(公告)日：1993-02-16
申请号：US685976
申请日：1991-04-15
申请人： Avi Tepman , Howard Grunes , Sasson Somekh , Dan Maydan
发明人： Avi Tepman , Howard Grunes , Sasson Somekh , Dan Maydan
IPC分类号： H01L21/00 , H01L21/677
CPC分类号： H01L21/67167 , H01L21/67184 , H01L21/67742 , Y10S148/006 , Y10S148/169 , Y10T29/41 , Y10T29/413
摘要： A processing system for workpieces such as semiconductor wafers is disclosed which incorporates multiple, isolated vacuum stages between the cassette load lock station and the main vacuum processing chambers. A vacuum gradient is applied between the cassette load lock and the main processing chambers to facilitate the use of a very high degree of vacuum in the processing chambers without lengthy pump down times. Separate robot chambers are associated with the vacuum processing chambers and the load lock(s). In addition, separate transport paths are provided between the two robot chambers to facilitate loading and unloading of workpieces. Pre-treatment and post-treatment chambers may be incorporated in the two transport paths.
摘要翻译：公开了一种用于诸如半导体晶片的工件的处理系统，其在盒加载锁定站和主真空处理室之间并入多个隔离的真空级。在盒式加载锁和主处理室之间施加真空梯度，以便在处理室中使用非常高的真空度，而不需要冗长的抽空时间。分离的机器人腔室与真空处理室和负载锁相关联。另外，在两个机器人室之间提供单独的输送路径，以便于加工和卸载工件。预处理和后处理室可以并入两个运输路径中。

77. 发明授权

US4227088A High speed computer assisted tomography 失效
标题翻译：高速计算机辅助断层扫描
公开(公告)号：US4227088A
公开(公告)日：1980-10-07
申请号：US949979
申请日：1978-10-10
申请人： Dan Maydan , Lawrence A. Shepp
发明人： Dan Maydan , Lawrence A. Shepp
IPC分类号： A61B6/00 , A61B6/03 , H01J35/24 , G01N21/34 , G01N23/04
CPC分类号： A61B6/56 , A61B6/032 , A61B6/4028 , A61B6/4275 , H01J35/24
摘要： X-ray generation and detection apparatus for use in a computer assisted tomography system which permits relatively high speed scanning. A large X-ray tube having a circular anode (3) surrounds the patient area. A movable electron gun (8) orbits adjacent to the anode. The anode directs into the patient area X-rays which are delimited into a fan beam by a pair of collimating rings (21). After passing through the patient, X-rays are detected by an array (22) of movable detectors. Detector subarrays (23) are synchronously movable out of the X-ray plane to permit the passage of the fan beam.
摘要翻译：用于计算机辅助断层摄影系统的X射线产生和检测装置，其允许相对高速的扫描。具有圆形阳极（3）的大型X射线管围绕患者区域。可移动电子枪（8）绕阳极轨道运动。阳极通过一对准直环（21）将患者区域X射线引导到扇形束。经过病人之后，X射线被可移动探测器的阵列（22）检测出来。检测器子阵列（23）可同步地移出X射线平面以允许风扇光束通过。

78. 发明授权

US4037111A Mask structures for X-ray lithography 失效
标题翻译： X射线光刻的掩模结构
公开(公告)号：US4037111A
公开(公告)日：1977-07-19
申请号：US693939
申请日：1976-06-08
申请人： Gerald Allan Coquin , Juan Ramon Maldonado , Dan Maydan , Sasson Roger Somekh
发明人： Gerald Allan Coquin , Juan Ramon Maldonado , Dan Maydan , Sasson Roger Somekh
IPC分类号： G03F1/22 , G21K1/10 , H01L21/027 , B01J17/00 , G02B5/00 , G21F5/04
CPC分类号： G03F1/22 , G21K1/10
摘要： It has been observed that the deposition and patterning of metallic layers on a supported X-ray-transparent film to form a mask for X-ray lithography introduce stresses in the mask structure. In turn these stresses cause distortions of the film and of the high-resolution X-ray-absorptive pattern formed thereon. Various techniques, including new metallization systems, are proposed for minimizing the establishment of stresses in such structures.
摘要翻译：已经观察到，在支撑的X射线透明膜上的金属层的沉积和图案化以形成用于X射线光刻的掩模，在掩模结构中引入应力。这些应力又产生了薄膜和形成在其上的高分辨率X射线吸收图案的变形。提出了各种技术，包括新的金属化系统，以最小化这种结构中的应力的建立。

79. 发明授权

US07431585B2 Apparatus and method for heating substrates 失效
公开(公告)号：US07431585B2
公开(公告)日：2008-10-07
申请号：US10278615
申请日：2002-10-22
申请人： Jun Zhao , David Quach , Timothy Weidman , Rick J. Roberts , Farhad Moghadam , Dan Maydan
发明人： Jun Zhao , David Quach , Timothy Weidman , Rick J. Roberts , Farhad Moghadam , Dan Maydan
IPC分类号： F27D3/00
CPC分类号： H01L21/67109 , Y10S414/139
摘要： An apparatus for processing substrates is disclosed. In one embodiment, the apparatus includes a housing and a plurality of stacked cell structures in the housing. An actuator is adapted to move the plurality of stacked cell structures inside of the housing while substrates in the stacked cell structures are being heated.

80. 发明授权

US07072534B2 Optical ready substrates 失效
标题翻译：光学就绪基板
公开(公告)号：US07072534B2
公开(公告)日：2006-07-04
申请号：US10280505
申请日：2002-10-25
申请人： Claes Björkman , Lawrence C. West , Dan Maydan , Samuel Broydo
发明人： Claes Björkman , Lawrence C. West , Dan Maydan , Samuel Broydo
IPC分类号： G02B6/12
CPC分类号： G02B6/12004 , G02B6/12 , G02B6/30 , G02B6/4214 , G02B6/4245 , G02B6/4257 , G02B6/4274 , G02B6/4283 , G02B6/43
摘要： An article of manufacture comprising an optical ready substrate made of a first semiconductor layer, an insulating layer on top of the first semiconductor layer, and a second semiconductor layer on top of the insulating layer, wherein the second semiconductor layer has a top surface and is laterally divided into two regions including a first region and a second region, the top surface of the first region being of a quality that is sufficient to permit microelectronic circuitry to be formed therein and the second region including an optical signal distribution circuit formed therein, the optical signal distribution circuit made up of interconnected semiconductor photonic elements and designed to provide signals to the microelectronic circuit to be fabricated in the first region of the second semiconductor layer.
摘要翻译：一种制品，包括由第一半导体层制成的光学就绪衬底，在第一半导体层的顶部上的绝缘层和在绝缘层的顶部上的第二半导体层，其中第二半导体层具有顶表面，并且是横向分为包括第一区域和第二区域的两个区域，第一区域的顶表面的质量足以允许在其中形成微电子电路，并且第二区域包括其中形成的光信号分配电路，光信号分配电路由互连的半导体光子元件组成，并被设计为向要在第二半导体层的第一区域中制造的微电子电路提供信号。

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