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71. 发明申请

US20060192751A1 Method of driving an electrophoretic display 有权
标题翻译：驱动电泳显示的方法
公开(公告)号：US20060192751A1
公开(公告)日：2006-08-31
申请号：US11330304
申请日：2006-01-11
申请人： Mitsutoshi Miyasaka , Atsushi Miyazaki , Hideyuki Kawai
发明人： Mitsutoshi Miyasaka , Atsushi Miyazaki , Hideyuki Kawai
IPC分类号： G09G3/34
CPC分类号： G09G3/344 , G09G2300/08 , G09G2310/061 , G09G2320/0257
摘要： An electrophoretic display device includes M×N numbers (M, and N are integers more than two) of pixels. The M×N numbers of pixels include M numbers of pixel groups having N numbers of pixels. Further, an image on the electrophoretic display device is displayed by making some of the M×N numbers of pixels switched at least from a bright display to a dark display, and vice versa. A period for displaying one piece of an image on the electrophoretic display is defined as period for forming an image and a period for introducing an image signal to each of the M×N numbers of pixels with sequentially selecting each of the pixels is defined as a frame period. Then, the time for forming an image includes a plurality of frame periods (a numbers of L: L is integers more than two.)
摘要翻译：电泳显示装置包括像素的M×N个数（M，N为大于2的整数）。 M×N个像素包括具有N个像素的M个像素组。此外，通过使至少从亮显示切换到暗显示的一些M×N个像素数来显示电泳显示装置上的图像，反之亦然。将用于在电泳显示器上显示一幅图像的周期定义为用于形成图像的周期，并且将顺序选择每个像素的图像信号引入到每个M×N个像素的周期被定义为帧周期。然后，用于形成图像的时间包括多个帧周期（L的数量是大于2的整数）

72. 发明授权

US07078917B2 Electrostatic capacitance detecting device 有权
标题翻译：静电电容检测装置
公开(公告)号：US07078917B2
公开(公告)日：2006-07-18
申请号：US10825377
申请日：2004-04-16
申请人： Hiroyuki Yoshida , Mitsutoshi Miyasaka
发明人： Hiroyuki Yoshida , Mitsutoshi Miyasaka
IPC分类号： G01R27/26
CPC分类号： G06K9/0002
摘要： The invention provides an electrostatic capacitance detection device. The electrostatic capacitance detection device can be formed of M individual power supply lines, N individual output lines, arranged in a matrix of M rows×N columns, and electrostatic capacitance detection elements provided on the crossing points of the individual power supply lines and the individual output lines, each of the electrostatic capacitance detection elements is formed of a signal detection element and a signal amplification element, the signal detection element is formed of a capacitance detecting electrode and a capacitance detecting dielectric layer, the signal amplification element formed of a metal-insulator-semiconductor (MIS) type thin film semiconductor device for signal amplification, including a gate electrode, a gate insulating layer and a semiconductor layer.
摘要翻译：本发明提供了一种静电电容检测装置。静电电容检测装置可以由M个单独的电源线，以M行×N列的矩阵排列的N个单独的输出线以及设置在各个电源线和各个输出线的交叉点上的静电电容检测元件每个静电电容检测元件由信号检测元件和信号放大元件构成，信号检测元件由电容检测电极和电容检测电介质层形成，该信号放大元件由金属绝缘体 - 用于信号放大的半导体（MIS）型薄膜半导体器件，包括栅电极，栅极绝缘层和半导体层。

73. 发明授权

US07078275B2 Semiconductor device and manufacturing method for same 失效
标题翻译：半导体器件及其制造方法相同
公开(公告)号：US07078275B2
公开(公告)日：2006-07-18
申请号：US10411145
申请日：2003-04-11
申请人： Yasushi Hiroshima , Mitsutoshi Miyasaka
发明人： Yasushi Hiroshima , Mitsutoshi Miyasaka
IPC分类号： H01L21/00
CPC分类号： H01L29/78696 , H01L27/1281 , H01L27/1296 , H01L29/66757 , H01L29/78675
摘要： An object is to provide a semiconductor device manufacturing method which makes possible a thin film transistor which is little affected by crystal grain boundaries, even when the channel width of the thin film transistor is made larger than the crystal grains of the semiconductor material. To this end, a thin film transistor of this invention comprises a gate electrode 22, source region 24, drain region 25, and channel formation region 26. The silicon film used in forming the active region comprises a plurality of substantially single-crystal silicon crystal grains, and regions including crystal grain boundaries which exist in the longitudinal direction of the channel formation region 26 (the direction L in the drawings) are removed. By this means, crystal grain boundaries are prevented from being included in each channel formation region 26, and the effective channel width can be increased.
摘要翻译：本发明的目的是提供一种半导体器件制造方法，即使当薄膜晶体管的沟道宽度大于半导体材料的晶粒时，也可能影响晶界的影响很小的薄膜晶体管。为此，本发明的薄膜晶体管包括栅极22，源极区24，漏极区25和沟道形成区26。用于形成有源区的硅膜包括多个基本单晶硅晶粒，除去存在于沟道形成区26的长度方向（图中的方向L）的晶界的区域。通过这种方式，防止了晶粒边界被包含在每个沟道形成区域26中，并且可以增加有效沟道宽度。

74. 发明申请

US20050053264A1 Personal verification device, card-type information storage medium, and information processing system using the same 有权
标题翻译：个人验证装置，卡式信息存储介质和使用该验证装置的信息处理系统
公开(公告)号：US20050053264A1
公开(公告)日：2005-03-10
申请号：US10614873
申请日：2003-07-09
申请人： Kazuhiko Amano , Mitsutoshi Miyasaka , Tatsuya Shimoda
发明人： Kazuhiko Amano , Mitsutoshi Miyasaka , Tatsuya Shimoda
IPC分类号： A61B5/0245 , A61B5/117 , G06F21/20 , G06K9/00
CPC分类号： G06K9/0002
摘要： A personal verification device includes a fingerprint sensor which detects a fingerprint of an operator, and a pulse wave sensor which detects a pulse wave of the operator. An index extraction section processes the pulse wave detected by the pulse wave sensor and extracts at least one index. First reference information which is compared with a fingerprint is stored in a first reference information storage section. Second reference information which is compared with the at least one index is stored in a second reference information storage section. A verification section outputs a signal indicating that the operator is true when it is determined that the operator is a registered person based on the result of comparison between the fingerprint and the first reference information, and it is determined that the operator is alive based on the result of comparison between the at least one index and the second reference information.
摘要翻译：个人验证装置包括检测操作者的指纹的指纹传感器和检测操作者的脉搏波的脉搏波传感器。索引提取部分处理由脉波传感器检测的脉波，并提取至少一个索引。与指纹进行比较的第一参考信息被存储在第一参考信息存储部分中。与至少一个索引进行比较的第二参考信息被存储在第二参考信息存储部分中。基于指纹和第一参考信息之间的比较结果确定运营商是注册人时，验证部分输出指示运营商为真的信号，并且基于该指示符确定运营商是活着的所述至少一个索引和所述第二参考信息之间的比较结果。

75. 发明授权

US06765265B2 System and method for manufacturing a thin film transistor 失效
标题翻译：用于制造薄膜晶体管的系统和方法
公开(公告)号：US06765265B2
公开(公告)日：2004-07-20
申请号：US09936040
申请日：2001-12-11
申请人： Ichio Yudasaka , Mitsutoshi Miyasaka , Piero Migliorato
发明人： Ichio Yudasaka , Mitsutoshi Miyasaka , Piero Migliorato
IPC分类号： H01L2901
CPC分类号： H01L29/78696 , H01L29/42384 , H01L29/78612
摘要： The present invention provides a thin film transistor (TET) and its production method which enable the stabilizing of saturation current and improving reliability by improving the film quality of the channel region. The TFT includes a channel region towering over a gate electrode through a gate insulation film, a source region connecting to the channel region and a drain region connecting to the channel region on an opposite side of the source region are formed on the polycrystal semiconductor film on which island-like patterning is performed. An indented section is formed on a surface of the channel region, and the section corresponding to the indented section becomes a recombination center which captures the small-number carrier (holes) because the degree of the crystallization is low in the section corresponding to the indented section due to shift from the optimum conditions at the time of laser annealing of the semiconductor.
摘要翻译：本发明提供一种薄膜晶体管（TET）及其制造方法，其能够通过提高沟道区域的膜质量来稳定饱和电流并提高可靠性。 TFT包括通过栅极绝缘膜在栅电极上耸立的沟道区，在多晶半导体膜上形成连接到沟道区的源极区和连接到源极区相对侧的沟道区的漏极区，进行岛状图案化。在通道区域的表面上形成凹陷部分，并且与缩进部分对应的部分成为俘获小数载体（空穴）的复合中心，因为在对应于缩进的部分中结晶度低由于半导体的激光退火时的最佳条件的变化。

76. 发明授权

US06753548B2 Laser heat treatment method, laser heat treatment apparatus, and semiconductor device 有权
标题翻译：激光热处理方法，激光热处理装置和半导体装置
公开(公告)号：US06753548B2
公开(公告)日：2004-06-22
申请号：US10420779
申请日：2003-04-23
申请人： Tetsuya Ogawa , Hidetada Tokioka , Yukio Sato , Mitsuo Inoue , Tomohiro Sasagawa , Mitsutoshi Miyasaka
发明人： Tetsuya Ogawa , Hidetada Tokioka , Yukio Sato , Mitsuo Inoue , Tomohiro Sasagawa , Mitsutoshi Miyasaka
IPC分类号： H01L2904
CPC分类号： H01L27/1285 , B23K26/0732 , H01L21/02532 , H01L21/02678 , H01L21/02686 , H01L21/268 , H01L27/1296
摘要： The laser heat treatment of an amorphous or polycrystalline silicon film material is conducted by forming a laser beam generated from a pulse laser source having a wavelength of 350 nm to 800 nm into a linear beam having a width and a length, and directing the linear beam onto a film material formed on a substrate.
摘要翻译：通过将具有350nm至800nm波长的脉冲激光源产生的激光束形成为具有宽度和长度的直线光束来进行非晶或多晶硅膜材料的激光热处理，并且引导线性光束在形成在基板上的薄膜材料上。

77. 发明授权

US06602765B2 Fabrication method of thin-film semiconductor device 失效
公开(公告)号：US06602765B2
公开(公告)日：2003-08-05
申请号：US09875910
申请日：2001-06-08
申请人： Hiroaki Jiroku , Mitsutoshi Miyasaka , Hidetada Tokioka , Tetsuya Ogawa
发明人： Hiroaki Jiroku , Mitsutoshi Miyasaka , Hidetada Tokioka , Tetsuya Ogawa
IPC分类号： H01L2120
CPC分类号： H01L21/02686 , H01L21/2026 , H01L27/1281 , H01L27/1296 , H01L29/66757 , H01L29/78675
摘要： An object is to fabricate high quality thin-film semiconductor devices at comparatively low temperatures. After providing a local heating system, an active semiconductor layer is formed, and melt crystallization is promoted by irradiating a pulsed laser onto the active semiconductor layer.

78. 发明授权

US06521492B2 Thin-film semiconductor device fabrication method 有权
公开(公告)号：US06521492B2
公开(公告)日：2003-02-18
申请号：US09876132
申请日：2001-06-08
申请人： Mitsutoshi Miyasaka , Hidetada Tokioka , Tetsuya Ogawa
发明人： Mitsutoshi Miyasaka , Hidetada Tokioka , Tetsuya Ogawa
IPC分类号： H01L2100
CPC分类号： H01L21/02686 , H01L21/02532 , H01L21/2026 , H01L27/1285 , H01L27/1296 , H01L29/04 , H01L29/66757 , H01L29/78675
摘要： In the thin-film semiconductor device fabrication method according to the present invention, after forming an amorphous semiconductor film, the film is crystallized in the solid phase state, then a portion of the semiconductor film is molten by irradiating it with a pulsed laser beam having an absorption coefficient in amorphous silicon that is greater than the absorption coefficient in polysilicon. Thereby, polycrystalline thin-film semiconductor devices having superior characteristics can be fabricated.

79. 发明授权

US06407012B1 Method of producing silicon oxide film, method of manufacturing semiconductor device, semiconductor device, display and infrared irradiating device 有权
标题翻译：制造氧化硅膜的方法，制造半导体装置的方法，半导体装置，显示器和红外线照射装置
公开(公告)号：US06407012B1
公开(公告)日：2002-06-18
申请号：US09380091
申请日：1999-08-25
申请人： Mitsutoshi Miyasaka , Takao Sakamoto
发明人： Mitsutoshi Miyasaka , Takao Sakamoto
IPC分类号： H01L2131
CPC分类号： C23C14/5813 , C23C14/10 , C23C14/58 , C23C16/402 , C23C16/56 , H01L21/02164 , H01L21/02211 , H01L21/02238 , H01L21/02252 , H01L21/02274 , H01L21/02304 , H01L21/02315 , H01L21/0234 , H01L21/02362 , H01L21/268 , H01L21/28158 , H01L21/3003 , H01L21/3105 , H01L29/4908
摘要： The method for manufacturing a silicon oxide film is characterized in that the method includes the steps of forming the silicon oxide film by a vapor deposition method or the like and of irradiating infrared light onto this silicon oxide film. Thus, according to the present invention, a silicon oxide film of relatively low quality formed at relatively low temperature can be improved to be a silicon oxide film of high quality. When the present invention is applied to a thin-film semiconductor device, a semiconductor device of high operational reliability and high performance can be manufactured.
摘要翻译：制造氧化硅膜的方法的特征在于，该方法包括通过气相沉积法等形成氧化硅膜并将红外光照射到该氧化硅膜上的步骤。因此，根据本发明，可以将在较低温度下形成的质量较差的氧化硅膜改善为高质量的氧化硅膜。当将本发明应用于薄膜半导体器件时，可以制造具有高操作可靠性和高性能的半导体器件。

80. 发明授权

US5858819A Fabrication method for a thin film semiconductor device, the thin film semiconductor device itself, liquid crystal display, and electronic device 失效
标题翻译：薄膜半导体器件，薄膜半导体器件本身，液晶显示器和电子器件的制造方法
公开(公告)号：US5858819A
公开(公告)日：1999-01-12
申请号：US591681
申请日：1996-02-15
申请人： Mitsutoshi Miyasaka
发明人： Mitsutoshi Miyasaka
IPC分类号： F16C29/00 , G02F1/136 , G02F1/1362 , H01L21/20 , H01L21/205 , H01L21/28 , H01L21/324 , H01L21/336 , H01L29/49 , H01L29/786 , H01L21/00
CPC分类号： H01L29/66757 , F16C29/00 , H01L21/0237 , H01L21/02521 , H01L21/02532 , H01L21/02576 , H01L21/02579 , H01L21/0262 , H01L21/02661 , H01L21/28079 , H01L21/3105 , H01L29/4908 , H01L29/78675 , G02F1/13454 , G02F2202/104
摘要： In order to fabricate a high performance thin film semiconductor device using a low temperature process in which it is possible to use low price glass substrates, a thin film semiconductor device has been fabricated by forming a silicon film at less than 450.degree. C., and, after crystallization, keeping the maximum processing temperature at or below 350.degree. C.In applying the present invention to the fabrication of an active matrix liquid crystal display, it is possible to both easily and reliably fabricate a large, high-quality liquid crystal display. Additionally, in applying the present invention to the fabrication of other electronic circuits as well, it is possible to both easily and reliably fabricate high-quality electronic circuits.
摘要翻译： PCT No.PCT / JP95 / 01196 Sec。 371日期：1996年2月15日 102（e）日期1996年2月15日PCT提交1995年6月15日PCT公布。出版物WO95 / 34916 PCT 日期1995年12月21日为了制造使用可以使用低价玻璃基板的低温工艺的高性能薄膜半导体器件，已经通过在小于450的范围内形成硅膜来制造薄膜半导体器件在结晶后，保持最高处理温度在350℃以下。在将本发明应用于有源矩阵液晶显示器的制造中，可以容易且可靠地制造大，高品质液晶显示。此外，在将本发明应用于制造其它电子电路的同时，可以容易且可靠地制造高质量的电子电路。

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