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1. 发明授权

US06727123B2 Method for manufacturing a thin-film transistor comprising a recombination center 有权
标题翻译：用于制造包括复合中心的薄膜晶体管的方法
公开(公告)号：US06727123B2
公开(公告)日：2004-04-27
申请号：US09936041
申请日：2001-12-18
申请人： Ichio Yudasaka , Mitsutoshi Miyasaka , Piero Migliorato
发明人： Ichio Yudasaka , Mitsutoshi Miyasaka , Piero Migliorato
IPC分类号： H01L2100
CPC分类号： H01L29/78696 , H01L21/2652 , H01L29/66757 , H01L29/78612
摘要： The present invention provides a thin-film transistor (TFT) and its production method which enables an arrangement restraining bipolar transistor type behavior, in order to stabilize saturation current and to provide a TFT that can improve reliability. The TFT includes a channel region facing a gate electrode through a gate insulating film, a source electrode connected to the channel region and a drain region connected to the channel region on the side opposite this source region are formed in a polycrystal semiconductor film that was patterned in island forms. In the channel region, a recombination center is formed for capturing a small number of carriers (holes) by introducing impurities, such as inert gases, metals, Group III elements, Group IV elements and Group V elements after a crystallization process is carried out on a semiconductor film 100.
摘要翻译：本发明提供一种薄膜晶体管（TFT）及其制造方法，其能够抑制双极晶体管类型的布置，以便稳定饱和电流并提供可提高可靠性的TFT。 TFT包括通过栅极绝缘膜面向栅电极的沟道区，连接到沟道区的源电极和与该源极相对侧的沟道区连接的漏极区域形成在图案化的多晶半导体膜中在岛屿形式。在通道区域中，通过引入杂质，如惰性气体，金属，III族元素，IV族元素和V族元素，形成复合中心，用于捕获少量载流子（空穴），结晶过程在半导体膜100。

2. 发明授权

US06765265B2 System and method for manufacturing a thin film transistor 失效
标题翻译：用于制造薄膜晶体管的系统和方法
公开(公告)号：US06765265B2
公开(公告)日：2004-07-20
申请号：US09936040
申请日：2001-12-11
申请人： Ichio Yudasaka , Mitsutoshi Miyasaka , Piero Migliorato
发明人： Ichio Yudasaka , Mitsutoshi Miyasaka , Piero Migliorato
IPC分类号： H01L2901
CPC分类号： H01L29/78696 , H01L29/42384 , H01L29/78612
摘要： The present invention provides a thin film transistor (TET) and its production method which enable the stabilizing of saturation current and improving reliability by improving the film quality of the channel region. The TFT includes a channel region towering over a gate electrode through a gate insulation film, a source region connecting to the channel region and a drain region connecting to the channel region on an opposite side of the source region are formed on the polycrystal semiconductor film on which island-like patterning is performed. An indented section is formed on a surface of the channel region, and the section corresponding to the indented section becomes a recombination center which captures the small-number carrier (holes) because the degree of the crystallization is low in the section corresponding to the indented section due to shift from the optimum conditions at the time of laser annealing of the semiconductor.
摘要翻译：本发明提供一种薄膜晶体管（TET）及其制造方法，其能够通过提高沟道区域的膜质量来稳定饱和电流并提高可靠性。 TFT包括通过栅极绝缘膜在栅电极上耸立的沟道区，在多晶半导体膜上形成连接到沟道区的源极区和连接到源极区相对侧的沟道区的漏极区，进行岛状图案化。在通道区域的表面上形成凹陷部分，并且与缩进部分对应的部分成为俘获小数载体（空穴）的复合中心，因为在对应于缩进的部分中结晶度低由于半导体的激光退火时的最佳条件的变化。

3. 发明授权

US06621101B2 Thin-film transistor 有权
公开(公告)号：US06621101B2
公开(公告)日：2003-09-16
申请号：US09936042
申请日：2001-12-12
申请人： Ichio Yudasaka , Mitsutoshi Miyasaka , Piero Migliorato
发明人： Ichio Yudasaka , Mitsutoshi Miyasaka , Piero Migliorato
IPC分类号： H01L29786
CPC分类号： H01L29/78696 , H01L29/78612
摘要： The present invention provides, in a TFT, a channel region facing a gate electrode through a gate insulating film, a source electrode connected to the channel region and a drain region connected to the channel region on the side opposite the source region that are formed in a polycrystal semiconductor film that was patterned in island forms. In the channel region, a recombination center is formed for capturing a small number of carriers (holes) by impurities, such as inert-gas, metals, Group III elements, Group IV elements and Group V elements, introduced to a predetermined region in this channel region, or by defects generated due to the introduction of these impurities. The present invention thus provides an arrangement restraining bipolar transistor type behavior to stabilize saturation current and to provide a TFT that can improve reliability.

4. 发明授权

US06580129B2 Thin-film transistor and its manufacturing method 有权
公开(公告)号：US06580129B2
公开(公告)日：2003-06-17
申请号：US09914914
申请日：2001-12-13
申请人： Basil Lui , Piero Migliorato , Ichio Yudasaka , Mitsutoshi Miyasaka
发明人： Basil Lui , Piero Migliorato , Ichio Yudasaka , Mitsutoshi Miyasaka
IPC分类号： H01L2900
CPC分类号： H01L29/66757 , H01L29/78612 , H01L29/78621 , H01L29/78624 , H01L29/78645
摘要： The present invention provides, in a TFT, a gate electrode and a channel domain that are plurally divided in the channel-length direction, a low-concentration domain that is formed between the divided channel domains, and a low-concentration drain domain that adjoins a second channel domain located closest to a drain domain side among the divided channel domains. Therefore, even if the impurity concentration is relatively high in the low-concentration domain located between the divided channel domains and a low-concentration drain domain, an abnormal increase of drain current in the saturated region can be prevented, and a TFT with a high drain current level can be obtained. Thus, the present invention provides a TFT and its manufacturing method where abnormal increase of drain current in the saturated region can be prevented and the drain current level in the saturated region is sufficiently high.

5. 发明授权

US06548356B2 Thin film transistor 有权
标题翻译：薄膜晶体管
公开(公告)号：US06548356B2
公开(公告)日：2003-04-15
申请号：US09914915
申请日：2001-12-13
申请人： Basil Lui , Piero Migliorato , Ichio Yudasaka , Mitsutoshi Miyasaka
发明人： Basil Lui , Piero Migliorato , Ichio Yudasaka , Mitsutoshi Miyasaka
IPC分类号： H01L21336
CPC分类号： H01L29/66757 , H01L29/78612
摘要： A semiconductor transistor comprising a substrate having an active layer formed thereon, a source and a drain formed in the active layer, a gate insulating layer formed on the active layer and a gate electrode formed on the insulating layer, wherein the gate electrode is split, the active layer has a doped region located between the source and the drain and aligned with the split in the gate electrode, and the gate electrode is aligned with the drain so as not to overlap the drain. The transistor may be formed using a method comprising the steps of: providing a semiconductor layer in which the source and drain are to be formed; forming a gate insulating layer on the semiconductor layer; forming a split gate electrode on the gate insulating layer; and using the split gate electrode as a mask in the doping of a portion of the semiconductor layer between the source and the drain of the final transistor.
摘要翻译：一种半导体晶体管，包括其上形成有有源层的衬底，在有源层中形成的源极和漏极，形成在有源层上的栅极绝缘层和形成在绝缘层上的栅电极，其中栅电极被分裂，有源层具有位于源极和漏极之间的掺杂区域，并且与栅极电极中的分离对准，并且栅电极与漏极对准，以便不与漏极重叠。可以使用包括以下步骤的方法来形成晶体管：提供要形成源极和漏极的半导体层; 在所述半导体层上形成栅极绝缘层; 在所述栅极绝缘层上形成分离栅电极; 并且在最终晶体管的源极和漏极之间掺杂半导体层的一部分时，使用分离栅电极作为掩模。

6. 发明授权

US06580633B2 Nonvolatile semiconductor memory device 有权
标题翻译：非易失性半导体存储器件
公开(公告)号：US06580633B2
公开(公告)日：2003-06-17
申请号：US09965686
申请日：2001-09-27
申请人： Satoshi Inoue , Ichio Yudasaka , Piero Migliorato
发明人： Satoshi Inoue , Ichio Yudasaka , Piero Migliorato
IPC分类号： G11C1122
CPC分类号： H01L27/11502 , G11C11/22 , H01L27/11585 , H01L27/1159 , H01L27/12 , H01L29/78391 , H01L29/78645 , H01L29/78648
摘要： A semiconductor memory device comprising: an active layer in which are formed a transistor source, channel and drain; a gate for the transistor; a layer of ferroelectric material; and an electrode for applying a voltage to the ferroelectric material; the electrode being spaced apart from the gate, the layer of ferroelectric material having two stable states of internal polarization, and the arrangement being such that the two states of polarization have a detectable difference in effect upon the transfer characteristic of the transistor. The arrangement enables cross-talk between memory cells upon write to be avoided and can mitigate physical interface problems between the ferroelectric material and the active layer.
摘要翻译：一种半导体存储器件，包括：有源层，其中形成晶体管源极，沟道和漏极; 晶体管的栅极; 一层铁电材料; 和用于向铁电体材料施加电压的电极; 所述电极与所述栅极间隔开，所述铁电材料层具有两个稳定的内部极化状态，并且所述布置使得所述两种极化状态对于所述晶体管的转移特性具有可检测的差异。该布置能够避免写入时存储单元之间的串扰，并且可以减轻铁电材料和有源层之间的物理接口问题。

7. 发明授权

US07647505B2 Recording medium, recording medium reading/writing apparatus, and method of using recording medium 失效
标题翻译：记录介质，记录介质读/写装置和使用记录介质的方法
公开(公告)号：US07647505B2
公开(公告)日：2010-01-12
申请号：US10384542
申请日：2003-03-11
申请人： Ichio Yudasaka
发明人： Ichio Yudasaka
IPC分类号： G06F21/00
CPC分类号： G06K19/0719 , G06K19/07 , G06K19/07354 , G07C9/00087 , G11B20/00086 , G11B20/00152 , G11B20/00173 , G11B20/0021 , G11B20/1215 , G11B2020/10546 , G11B2220/60
摘要： The current society can be referred to as a card society, since people can use various types of cards for a variety of applications. However, card users must always carry a number of cards depending upon the application, and must use different cards according to the purpose, which can bother such users. A memory of an IC chip of an IC card includes a fingerprint information area to verify the identity of a card owner, a personal information area in which personal information of the card owner is classified and recorded with different security levels set up, a company information area in which each company writes information of the company using an “encryption key” unique to the company, and a public organization information area in which each public organization writes information of the public organization using an “encryption key” unique to the public organization.
摘要翻译：目前的社会可以称为卡片社会，因为人们可以使用各种类型的卡片进行各种应用。然而，卡用户必须始终携带多个卡片，这取决于应用，并且必须根据目的使用不同的卡，这可能会扰乱这些用户。 IC卡的IC芯片的存储器包括用于验证卡所有者的身份的指纹信息区域，其中分配并记录具有不同安全级别的卡所有者的个人信息的个人信息区域，公司信息每个公司使用公司独有的“加密密钥”写入公司信息的区域，以及公共组织信息区域，其中每个公共组织使用公共组织特有的“加密密钥”来写入公共组织的信息。

8. 发明授权

US07521299B2 Method of manufacturing transistor, method of manufacturing electro-optical device, and method of manufacturing electronic device 失效
标题翻译：晶体管的制造方法，电光装置的制造方法以及电子装置的制造方法
公开(公告)号：US07521299B2
公开(公告)日：2009-04-21
申请号：US11140748
申请日：2005-06-01
申请人： Hideki Tanaka , Takashi Masuda , Ichio Yudasaka , Takashi Aoki
发明人： Hideki Tanaka , Takashi Masuda , Ichio Yudasaka , Takashi Aoki
IPC分类号： H01L21/84
CPC分类号： B82Y10/00 , B82Y30/00 , H01L27/1292 , H01L27/283 , H01L29/66757 , H01L51/0005 , H01L51/0022 , H01L51/0541
摘要： A method of manufacturing a transistor includes disposing a droplet containing a bank material as a solute or a dispersoid on a substrate, drying the droplet to form a bank, ejecting a conductive material on a part of the bank to form a first conductive region and a second conductive region with the part of the bank interposed therebetween, removing the bank to form a groove between the first and second conductive regions, supplying a semiconductor material into the groove to form a semiconductor film, forming a gate insulating film on the semiconductor film, and forming a gate electrode at a position on the gate insulating film facing the semiconductor film.
摘要翻译：一种晶体管的制造方法，其特征在于，在基板上设置含有作为溶质或分散质的堤料的液滴，干燥所述液滴以形成堤，在所述堤的一部分上排出导电性物质，形成第一导电性区域和第二导电区域，其中一部分插入其间，去除堤以在第一和第二导电区域之间形成沟槽，将半导体材料供应到沟槽中以形成半导体膜，在半导体膜上形成栅极绝缘膜，以及在面对半导体膜的栅极绝缘膜上的位置处形成栅电极。

9. 发明授权

US07375774B2 Method of manufacturing semiconductor device 有权
标题翻译：制造半导体器件的方法
公开(公告)号：US07375774B2
公开(公告)日：2008-05-20
申请号：US11032135
申请日：2005-01-11
申请人： Hideki Tanaka , Ichio Yudasaka , Masami Miyasaka
发明人： Hideki Tanaka , Ichio Yudasaka , Masami Miyasaka
IPC分类号： G02F1/136
CPC分类号： G02F1/136227 , G02F1/133345
摘要： A simple method of manufacturing a semiconductor device including a thick and dense insulator layer having a uniform film thickness includes forming the insulator layer by repeatedly applying a liquid material to a conductive layer plural times.
摘要翻译：制造包括具有均匀膜厚度的厚而致密的绝缘体层的半导体器件的简单方法包括通过重复地将液体材料多次施加到导电层来形成绝缘体层。

10. 发明授权

US07364939B2 Active matrix display device 有权
标题翻译：主动矩阵显示装置
公开(公告)号：US07364939B2
公开(公告)日：2008-04-29
申请号：US11071312
申请日：2005-03-04
申请人： Ichio Yudasaka
发明人： Ichio Yudasaka
IPC分类号： H01L21/00 , H01L51/40 , B05D5/00 , B05D7/00
CPC分类号： H01L27/3246 , H01L27/3211 , H01L27/3276 , H01L51/0005 , H01L51/5203 , H01L51/5284
摘要： In order to provide an active matrix display device in which a thick insulating film is preferably formed around an organic semiconductive film of a thin film luminescent device without damaging the thin film luminescent device, the active matrix display device is provided with a bank layer (bank) along a data line (sig) and a scanning line (gate) to suppress formation of parasitic capacitance in the data line (sig), in which the bank layer (bank) surrounds a region that forms the organic semiconductive film of the thin film luminescent device by an ink-jet process. The bank layer (bank) includes a lower insulating layer formed of a thick organic material and an upper insulating layer of an organic material which is deposited on the lower insulating layer and has a smaller thickness so as to avoid contact of the organic semiconductive film with the upper insulating layer.
摘要翻译：为了提供一种有源矩阵显示装置，其中优选在薄膜发光装置的有机半导体膜周围形成厚的绝缘膜，而不损坏薄膜发光装置，有源矩阵显示装置设有银行层）沿着数据线（sig）和扫描线（gate），以抑制数据线（sig）中的寄生电容的形成，其中堤层（堤）围绕形成薄膜的有机半导体膜的区域发光装置。堤层（堤）包括由厚的有机材料形成的下绝缘层和沉积在下绝缘层上并具有较小厚度的有机材料的上绝缘层，以避免有机半导体膜与上绝缘层。

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