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    • 75. 发明授权
    • Integral power steering apparatus
    • 整体动力转向装置
    • US06896093B2
    • 2005-05-24
    • US10861428
    • 2004-06-07
    • Shogo IshikawaHideki Takahashi
    • Shogo IshikawaHideki Takahashi
    • B62D5/24B62D5/06B62D5/12
    • B62D5/061
    • An integral power steering apparatus includes a stroke limiter. A piston defines two hydraulic chambers in a housing. A communicating passage, a first valve disposed between the first hydraulic chamber and the communicating passage, and a second valve disposed between the second hydraulic chamber and the communicating passage, are provided to serve for a stroke limiter, in addition to a hydraulic circuit for supplying hydraulic fluid to the two hydraulic chambers. The two valves each include a valve body having a bore and serving as a valve seat, a plunger slidably fitted within the bore of the valve body and serving as a valving element, and a spring disposed on the bottom of the bore of the valve body and biasing the plunger to be in contact with the valve body.
    • 整体动力转向装置包括行程限制器。 活塞在壳体中限定两个液压室。 连通通道,设置在第一液压室和连通通道之间的第一阀以及设置在第二液压室和连通通道之间的第二阀除了用于供应的液压回路之外还设置用于行程限制器 液压油到两个液压室。 两个阀都包括具有孔并用作阀座的阀体,可滑动地装配在阀体的孔内并用作阀元件的柱塞以及设置在阀体的孔的底部上的弹簧 并且使柱塞偏压成与阀体接触。
    • 78. 发明授权
    • Semiconductor device with deliberately damaged layer having a shorter carrier lifetime therein
    • 具有故意损坏的层的半导体器件具有较短的载流子寿命
    • US06603189B2
    • 2003-08-05
    • US09463975
    • 2000-02-14
    • Hideki Takahashi
    • Hideki Takahashi
    • H01L29861
    • H01L21/263H01L21/26506H01L29/32H01L29/6609H01L29/861
    • A technique of improving a reverse recovery characteristic of a semiconductor device which solves a technical problem of breakdown voltage reduction which has conventionally caused in enhancing soft recover. To solve the technical problem, in a PN junction between a P type layer and an N type layer, a heavy metal such as platinum is firstly diffused into an—layer and N+ layer of the N type layer. Subsequently, helium ion is implanted into the inside of the—layer from the interface between the P type layer and the N+ layer to a predetermined depth, so that the N− layer in the vicinity of the junction is damaged to form, in the—layer, a low lifetime region having a carrier lifetime smaller than that of the N type layer and a resistibility that decreases monotonically. Such a technique may be applied to diodes, and particularly, free-wheel diodes in power modules.
    • 一种提高半导体器件的反向恢复特性的技术,其解决了通常在软恢复中引起的击穿电压降低的技术问题。 为了解决技术问题,在P型层和N型层之间的PN结中,首先将诸如铂的重金属扩散到N型层的层和N +层中。 随后,将氦离子从P型层和N +层之间的界面注入到层内,达到预定深度,使得在结附近的N层被损坏, 具有小于N型层的载流子寿命的低寿命区域和单调减小的电阻率。 这种技术可以应用于二极管,特别是功率模块中的续流二极管。