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71. 发明申请

US20110215291A1 SEMICONDUCTOR LIGHT-EMITTING DEVICE 失效
标题翻译：半导体发光器件
公开(公告)号：US20110215291A1
公开(公告)日：2011-09-08
申请号：US12873586
申请日：2010-09-01
申请人： Toshihide Ito , Koichi Tachibana , Shinya Nunoue
发明人： Toshihide Ito , Koichi Tachibana , Shinya Nunoue
IPC分类号： H01L31/0256 , H01L31/0352
CPC分类号： H01L31/022466 , B82Y20/00 , H01L31/035236 , H01L33/42
摘要： According to one embodiment, a semiconductor light-emitting device using an ITON layer for a transparent conductor and realizing low drive voltage, high luminance efficiency, and uniformed light emission intensity distribution is provided. The semiconductor light-emitting device includes: a substrate; an n-type semiconductor layer formed on the substrate; an active layer formed on the n-type semiconductor layer; a p-type semiconductor layer formed on the active layer and whose uppermost part is a p-type GaN layer; an ITON (Indium Tin Oxynitride) layer formed on the p-type GaN layer; an ITO (Indium Tin Oxide) layer formed on the ITON layer; a first metal electrode formed on a part on the ITO layer; and a second metal electrode formed in contact with the n-type semiconductor layer.
摘要翻译：根据一个实施例，提供了一种使用用于透明导体的ITON层并实现低驱动电压，高亮度效率和均匀的发光强度分布的半导体发光器件。半导体发光器件包括：衬底; 在该基板上形成的n型半导体层; 形成在所述n型半导体层上的有源层; 在有源层上形成的p型半导体层，其最上部是p型GaN层; 形成在p型GaN层上的ITON（铟锡氧氮化物）层; 形成在ITON层上的ITO（氧化铟锡）层; 形成在所述ITO层的一部分上的第一金属电极; 以及形成为与n型半导体层接触的第二金属电极。

72. 发明授权

US07773648B2 Semiconductor device and method for manufacturing the same 有权
标题翻译：半导体装置及其制造方法
公开(公告)号：US07773648B2
公开(公告)日：2010-08-10
申请号：US11365531
申请日：2006-03-02
申请人： Koichi Tachibana , Shinji Saito , Shinya Nunoue
发明人： Koichi Tachibana , Shinji Saito , Shinya Nunoue
IPC分类号： H01S3/04 , H01S5/00
CPC分类号： H01S5/34333 , B82Y20/00 , H01S5/0021 , H01S5/0281 , H01S5/0287 , H01S5/2009 , H01S5/2201 , H01S5/2214 , H01S5/2231 , H01S5/305 , H01S5/3054 , H01S5/3216
摘要： Disclosed herein is a high-reliability semiconductor device. The laser diode includes: a substrate; a multi-layer film including a first conductivity type cladding layer provided on the substrate, a first conductivity type guide layer provided on the first conductivity type cladding layer, an active layer provided on the first conductivity type guide layer, a second conductivity type guide layer provided on the active layer, and a second conductivity type cladding layer provided on the second conductivity type guide layer, each of the layers being made of a nitride-based III-V group compound semiconductor; a first protective layer made of nitride and provided on a light emitting surface of the laser diode; and a second protective layer provided on the first protective layer and made of nitride having a refractive index different from that of the first protective layer.
摘要翻译：这里公开了高可靠性半导体器件。激光二极管包括：基板; 包括设置在基板上的第一导电型包覆层的多层膜，设置在第一导电型包覆层上的第一导电型引导层，设置在第一导电型引导层上的有源层，第二导电型引导层设置在所述有源层上，以及设置在所述第二导电型导向层上的第二导电型包覆层，所述层由氮化物系III-V族化合物半导体构成。由氮化物制成的第一保护层，设置在激光二极管的发光表面上; 以及设置在第一保护层上并由与第一保护层的折射率不同的折射率的氮化物制成的第二保护层。

73. 发明授权

US09065003B2 Semiconductor light emitting device and semiconductor wafer 有权
标题翻译：半导体发光器件和半导体晶片
公开(公告)号：US09065003B2
公开(公告)日：2015-06-23
申请号：US13405509
申请日：2012-02-27
申请人： Hisashi Yoshida , Koichi Tachibana , Tomonari Shioda , Toshiki Hikosaka , Jongil Hwang , Hung Hung , Naoharu Sugiyama , Shinya Nunoue
发明人： Hisashi Yoshida , Koichi Tachibana , Tomonari Shioda , Toshiki Hikosaka , Jongil Hwang , Hung Hung , Naoharu Sugiyama , Shinya Nunoue
IPC分类号： H01L29/06 , H01L33/12 , H01L33/32 , H01L33/02
CPC分类号： H01L33/12 , H01L33/02 , H01L33/32
摘要： According to one embodiment, a semiconductor light emitting device includes a first semiconductor layer of a first conductivity type, a second semiconductor layer of a second conductivity type, and a light emitting layer provided between the first semiconductor layer and the second semiconductor layer and configured to emit a light having a peak wavelength of 440 nanometers or more. Tensile strain is applied to the first semiconductor layer. An edge dislocation density of the first semiconductor layer is 5×109/cm2 or less. A lattice mismatch factor between the first semiconductor layer and the light emitting layer is 0.11 percent or less.
摘要翻译：根据一个实施例，半导体发光器件包括第一导电类型的第一半导体层，第二导电类型的第二半导体层和设置在第一半导体层和第二半导体层之间的发光层，发出峰值波长为440纳米以上的光。对第一半导体层施加拉伸应变。第一半导体层的边缘位错密度为5×10 9 / cm 2以下。第一半导体层和发光层之间的晶格失配因子为0.11％以下。

74. 发明授权

US08728237B2 Crystal growth method for nitride semiconductor having a multiquantum well structure 有权
标题翻译：具有多量子阱结构的氮化物半导体的晶体生长方法
公开(公告)号：US08728237B2
公开(公告)日：2014-05-20
申请号：US12874594
申请日：2010-09-02
申请人： Tomonari Shioda , Toshiki Hikosaka , Yoshiyuki Harada , Koichi Tachibana , Shinya Nunoue
发明人： Tomonari Shioda , Toshiki Hikosaka , Yoshiyuki Harada , Koichi Tachibana , Shinya Nunoue
IPC分类号： C30B25/02
CPC分类号： H01L21/02636 , C30B25/02 , C30B29/403 , H01L21/0254 , H01L33/007
摘要： A method for growing nitride semiconductor crystals contains: growing a first semiconductor layer containing InxGa1-xN (0
摘要翻译：一种用于生长氮化物半导体晶体的方法包括：使用含有惰性气体的第一载气，在第一生长温度下，在衬底上生长含有In x Ga 1-x N（0

75. 发明申请

US20110215370A1 SEMICONDUCTOR LIGHT-EMITTING DEVICE 有权
标题翻译：半导体发光器件
公开(公告)号：US20110215370A1
公开(公告)日：2011-09-08
申请号：US12873753
申请日：2010-09-01
申请人： Taisuke Sato , Toshiyuki Oka , Koichi Tachibana , Shinya Nunoue , Kazufumi Shiozawa , Takayoshi Fujii
发明人： Taisuke Sato , Toshiyuki Oka , Koichi Tachibana , Shinya Nunoue , Kazufumi Shiozawa , Takayoshi Fujii
IPC分类号： H01L33/26
CPC分类号： H01L33/20 , H01L33/46
摘要： According to one embodiment, a semiconductor light-emitting device having high light extraction efficiency is provided. The semiconductor light-emitting device includes a light transmissive substrate; a nitride semiconductor layer of a first conduction type formed on or above a top face side of the light transmissive substrate; an active layer made of nitride semiconductor formed on a top face of the nitride semiconductor layer of the first conduction type; a nitride semiconductor layer of a second conduction type formed on a top face of the active layer; a dielectric layer formed on a bottom face of the light transmissive substrate and having a refractive index lower than that of the light transmissive substrate; and a metal layer formed on a bottom face of the dielectric layer. And an interface between the light transmissive substrate and the dielectric layer is a uneven face, and an interface between the dielectric layer and the metal layer is a flat face.
摘要翻译：根据一个实施例，提供了具有高光提取效率的半导体发光器件。半导体发光器件包括透光衬底; 形成在所述透光基板的顶面侧上方或上方的第一导电型氮化物半导体层; 形成在第一导电型氮化物半导体层的顶面上的由氮化物半导体制成的有源层; 形成在有源层的顶面上的第二导电类型的氮化物半导体层; 介电层，其形成在所述透光性基板的底面上，折射率低于所述透光性基板的折射率; 以及形成在电介质层的底面上的金属层。并且透光基板和电介质层之间的界面是不平坦的面，并且介电层和金属层之间的界面是平坦的面。

76. 发明申请

US20110197808A1 CRYSTAL GROWTH METHOD FOR NITRIDE SEMICONDUCTOR 有权
标题翻译：氮化物半导体的晶体生长方法
公开(公告)号：US20110197808A1
公开(公告)日：2011-08-18
申请号：US12874594
申请日：2010-09-02
申请人： Tomonari SHIODA , Toshiki Hikosaka , Yoshiyuki Harada , Koichi Tachibana , Shinya Nunoue
发明人： Tomonari SHIODA , Toshiki Hikosaka , Yoshiyuki Harada , Koichi Tachibana , Shinya Nunoue
IPC分类号： C30B25/10
CPC分类号： H01L21/02636 , C30B25/02 , C30B29/403 , H01L21/0254 , H01L33/007
摘要： Certain embodiments provide a crystal growth method for nitride semiconductors, including: growing a first semiconductor layer containing InxGa1-xN (0
摘要翻译：某些实施例提供了一种用于氮化物半导体的晶体生长方法，其包括：在第一生长温度下，在衬底上生长含有In x Ga 1-x N（0

77. 发明授权

US08604496B2 Optical semiconductor device 有权
标题翻译：光半导体器件
公开(公告)号：US08604496B2
公开(公告)日：2013-12-10
申请号：US13214690
申请日：2011-08-22
申请人： Tomonari Shioda , Hisashi Yoshida , Koichi Tachibana , Naoharu Sugiyama , Shinya Nunoue
发明人： Tomonari Shioda , Hisashi Yoshida , Koichi Tachibana , Naoharu Sugiyama , Shinya Nunoue
IPC分类号： H01L33/00
CPC分类号： H01L33/06 , H01L33/32
摘要： According to one embodiment, an optical semiconductor device includes an n-type semiconductor layer, a p-type semiconductor layer, and a functional part. The functional part is provided between the n-type semiconductor layer and the p-type semiconductor layers. The functional part includes a plurality of active layers stacked in a direction from the n-type semiconductor layer toward the p-type semiconductor layer. At least two of the active layers include a multilayer stacked body, an n-side barrier layer, a well layer and a p-side barrier layer. The multilayer stacked body includes a plurality of thick film layers and a plurality of thin film layers alternately stacked in the direction. The n-side barrier layer is provided between the multilayer stacked body and the p-type layer. The well layer is provided between the n-side barrier layer and the p-type layer. The p-side barrier layer is provided between the well layer and the p-type layer.
摘要翻译：根据一个实施例，光学半导体器件包括n型半导体层，p型半导体层和功能部件。功能部件设置在n型半导体层和p型半导体层之间。功能部件包括在从n型半导体层朝向p型半导体层的方向上堆叠的多个有源层。至少两个有源层包括多层堆叠体，n侧阻挡层，阱层和p侧势垒层。多层堆叠体包括沿该方向交替堆叠的多个厚膜层和多个薄膜层。 n侧阻挡层设置在多层叠层体和p型层之间。阱层设置在n侧阻挡层和p型层之间。 p侧阻挡层设置在阱层和p型层之间。

78. 发明授权

US08395263B2 Semiconductor light emitting device and method for manufacturing the same 有权
标题翻译：半导体发光器件及其制造方法
公开(公告)号：US08395263B2
公开(公告)日：2013-03-12
申请号：US13029462
申请日：2011-02-17
申请人： Taisuke Sato , Toshiyuki Oka , Koichi Tachibana , Shinya Nunoue
发明人： Taisuke Sato , Toshiyuki Oka , Koichi Tachibana , Shinya Nunoue
IPC分类号： H01L23/48
CPC分类号： H01L33/60 , H01L33/30 , H01L33/32 , H01L33/36 , H01L33/38 , H01L33/382 , H01L33/385 , H01L33/387 , H01L33/40 , H01L33/405 , H01L33/42 , H01L33/44 , H01L2224/29083 , H01L2224/29099 , H01L2933/0016
摘要： According to one embodiment, a semiconductor light emitting device includes a stacked structural body, a first, a second and a third conductive layer. The stacked structural body includes first and second semiconductors and a light emitting layer provided therebetween. The second semiconductor layer is disposed between the first conductive layer and the light emitting layer. The first conductive layer is transparent. The first conductive layer has a first major surface on a side opposite to the second semiconductor layer. The second conductive layer is in contact with the first major surface. The third conductive layer is in contact with the first major surface and has a reflectance higher than a reflectance of the second conductive layer. The third conductive layer includes an extending part extending in parallel to the first major surface. At least a portion of the extending part is not covered by the second conductive layer.
摘要翻译：根据一个实施例，半导体发光器件包括层叠结构体，第一，第二和第三导电层。堆叠结构体包括第一和第二半导体以及设置在它们之间的发光层。第二半导体层设置在第一导电层和发光层之间。第一导电层是透明的。第一导电层在与第二半导体层相对的一侧具有第一主表面。第二导电层与第一主表面接触。第三导电层与第一主表面接触并且具有高于第二导电层的反射率的反射率。第三导电层包括平行于第一主表面延伸的延伸部分。延伸部分的至少一部分不被第二导电层覆盖。

79. 发明申请

US20120132940A1 OPTICAL SEMICONDUCTOR DEVICE 有权
标题翻译：光学半导体器件
公开(公告)号：US20120132940A1
公开(公告)日：2012-05-31
申请号：US13214690
申请日：2011-08-22
申请人： Tomonari Shioda , Hisashi Yoshida , Koichi Tachibana , Naoharu Sugiyama , Shinya Nunoue
发明人： Tomonari Shioda , Hisashi Yoshida , Koichi Tachibana , Naoharu Sugiyama , Shinya Nunoue
IPC分类号： H01L33/32
CPC分类号： H01L33/06 , H01L33/32
摘要： According to one embodiment, an optical semiconductor device includes an n-type semiconductor layer, a p-type semiconductor layer, and a functional part. The functional part is provided between the n-type semiconductor layer and the p-type semiconductor layers. The functional part includes a plurality of active layers stacked in a direction from the n-type semiconductor layer toward the p-type semiconductor layer. At least two of the active layers include a multilayer stacked body, an n-side barrier layer, a well layer and a p-side barrier layer. The multilayer stacked body includes a plurality of thick film layers and a plurality of thin film layers alternately stacked in the direction. The n-side barrier layer is provided between the multilayer stacked body and the p-type layer. The well layer is provided between the n-side barrier layer and the p-type layer. The p-side barrier layer is provided between the well layer and the p-type layer.
摘要翻译：根据一个实施例，光学半导体器件包括n型半导体层，p型半导体层和功能部件。功能部件设置在n型半导体层和p型半导体层之间。功能部件包括在从n型半导体层朝向p型半导体层的方向上堆叠的多个有源层。至少两个有源层包括多层堆叠体，n侧阻挡层，阱层和p侧势垒层。多层堆叠体包括沿该方向交替堆叠的多个厚膜层和多个薄膜层。 n侧阻挡层设置在多层叠层体和p型层之间。阱层设置在n侧阻挡层和p型层之间。 p侧阻挡层设置在阱层和p型层之间。

80. 发明申请

US20120032213A1 SEMICONDUCTOR LIGHT EMITTING DEVICE AND METHOD FOR MANUFACTURING THE SAME 有权
标题翻译：半导体发光器件及其制造方法
公开(公告)号：US20120032213A1
公开(公告)日：2012-02-09
申请号：US13029462
申请日：2011-02-17
申请人： Taisuke SATO , Toshiyuki Oka , Koichi Tachibana , Shinya Nunoue
发明人： Taisuke SATO , Toshiyuki Oka , Koichi Tachibana , Shinya Nunoue
IPC分类号： H01L33/60
CPC分类号： H01L33/60 , H01L33/30 , H01L33/32 , H01L33/36 , H01L33/38 , H01L33/382 , H01L33/385 , H01L33/387 , H01L33/40 , H01L33/405 , H01L33/42 , H01L33/44 , H01L2224/29083 , H01L2224/29099 , H01L2933/0016
摘要： According to one embodiment, a semiconductor light emitting device includes a stacked structural body, a first, a second and a third conductive layer. The stacked structural body includes first and second semiconductors and a light emitting layer provided therebetween. The second semiconductor layer is disposed between the first conductive layer and the light emitting layer. The first conductive layer is transparent. The first conductive layer has a first major surface on a side opposite to the second semiconductor layer. The second conductive layer is in contact with the first major surface. The third conductive layer is in contact with the first major surface and has a reflectance higher than a reflectance of the second conductive layer. The third conductive layer includes an extending part extending in parallel to the first major surface. At least a portion of the extending part is not covered by the second conductive layer.
摘要翻译：根据一个实施例，半导体发光器件包括层叠结构体，第一，第二和第三导电层。堆叠结构体包括第一和第二半导体以及设置在它们之间的发光层。第二半导体层设置在第一导电层和发光层之间。第一导电层是透明的。第一导电层在与第二半导体层相对的一侧具有第一主表面。第二导电层与第一主表面接触。第三导电层与第一主表面接触并且具有高于第二导电层的反射率的反射率。第三导电层包括平行于第一主表面延伸的延伸部分。延伸部分的至少一部分不被第二导电层覆盖。

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