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71. 发明授权

US07719169B2 Micro-electromechanical device 失效
标题翻译：微机电装置
公开(公告)号：US07719169B2
公开(公告)日：2010-05-18
申请号：US11686731
申请日：2007-03-15
申请人： Takashi Kawakubo , Toshihiko Nagano , Michihiko Nishigaki
发明人： Takashi Kawakubo , Toshihiko Nagano , Michihiko Nishigaki
IPC分类号： H01L41/04 , H01L41/047
CPC分类号： B81B3/0072 , B81B2201/032 , H01G5/16 , H01G5/18 , H01L41/0946 , H01L41/0953
摘要： A micro-electromechanical device includes a first piezoelectric actuator and a second piezoelectric actuator. The first piezoelectric actuator includes a first beam fixed on a substrate and a second beam extended in parallel to the first beam from a first connecting end to a first working end. A second piezoelectric actuator includes a third beam, spaced from the first beam, fixed on the substrate and a fourth beam extended in parallel to the third beam from a second connecting end to a second working end. The second working end faces the first working end in a perpendicular direction to a surface of the substrate.
摘要翻译：微机电装置包括第一压电致动器和第二压电致动器。第一压电致动器包括固定在基板上的第一光束和从第一连接端到第一工作端平行于第一光束延伸的第二光束。第二压电致动器包括固定在基板上的与第一光束间隔开的第三光束和从第二连接端到第二工作端平行于第三光束延伸的第四光束。第二工作端在与基板的表面垂直的方向上面向第一工作端。

72. 发明申请

US20090322183A1 INERTIAL SENSOR AND INERTIAL DETECTING DEVICE 审中-公开
标题翻译：惯性传感器和惯性检测装置
公开(公告)号：US20090322183A1
公开(公告)日：2009-12-31
申请号：US12488691
申请日：2009-06-22
申请人： Takashi Kawakubo , Toshihiko Nagano , Michihiko Nishigaki
发明人： Takashi Kawakubo , Toshihiko Nagano , Michihiko Nishigaki
IPC分类号： G01P15/09
CPC分类号： G01P15/09 , G01C19/5621 , G01C19/5628 , G01C19/5656 , G01P15/0922 , G01P15/18 , G01P2015/0817 , G01P2015/0828
摘要： An inertial sensor includes a first beam, a first proof mass section and a first upper surface stopper section. The first beam extends in a first direction in a plane parallel to a major surface of a substrate and is held with a spacing from the major surface of the substrate. The first beam has a first detecting section including a first upper side electrode, a first lower side electrode, and a first upper side piezoelectric film provided between the first upper side electrode and the first lower side electrode. The first beam has one end connected to the major surface of the substrate. The first proof mass section is connected to the other end of the first beam and held with a spacing from the major surface of the substrate. The first upper surface stopper section is provided on the opposite side of the first proof mass section from the substrate with a spacing from the first proof mass section.
摘要翻译：惯性传感器包括第一光束，第一检测质量部分和第一上表面阻挡部分。第一光束在与基板的主表面平行的平面中沿第一方向延伸，并且与基板的主表面保持间隔。第一光束具有包括设置在第一上侧电极和第一下侧电极之间的第一上侧电极，第一下侧电极和第一上侧压电膜的第一检测部。第一光束的一端连接到基板的主表面。第一检测质量部分连接到第一光束的另一端并且与衬底的主表面间隔保持。第一上表面止动部分设置在第一检验质量部分的与第一检验质量部分间隔开的基板的相对侧上。

73. 发明授权

US07567018B2 Micro-mechanical device, micro-switch, variable capacitor high frequency circuit and optical switch 失效
标题翻译：微机械装置，微动开关，可变电容高频电路和光开关
公开(公告)号：US07567018B2
公开(公告)日：2009-07-28
申请号：US11400407
申请日：2006-04-10
申请人： Takashi Kawakubo , Toshihiko Nagano , Kazuhide Abe , Michihiko Nishigaki
发明人： Takashi Kawakubo , Toshihiko Nagano , Kazuhide Abe , Michihiko Nishigaki
IPC分类号： H01L41/08
CPC分类号： B81B3/0021 , B81B2201/014 , B81B2201/045 , G02B26/0858 , H01G5/18 , H01G5/40 , H01H2057/006
摘要： A micro-mechanical device includes a first piezoelectric actuator including a piezoelectric film, and lower and upper electrodes interleaving the piezoelectric film, and extending from a first fixing part on a substrate to a first operating end, and a second piezoelectric actuator connected to the first piezoelectric actuator via a connecting part at the first operating end of the first piezoelectric actuator, and extending from the connecting part to a second operating end, the second piezoelectric actuator being shorter than the first piezoelectric actuator.
摘要翻译：微机械装置包括：第一压电致动器，其包括压电膜，下电极和上电极交错压电膜，并从衬底上的第一固定部分延伸到第一操作端;以及第二压电致动器，压电致动器经由第一压电致动器的第一操作端处的连接部分并且从连接部分延伸到第二操作端，第二压电致动器比第一压电致动器短。

74. 发明申请

US20090135541A1 ACTUATOR AND ELECTRONIC CIRCUIT BASED THEREON 审中-公开
标题翻译：基于执行器和电子电路
公开(公告)号：US20090135541A1
公开(公告)日：2009-05-28
申请号：US12266245
申请日：2008-11-06
申请人： Takashi Kawakubo , Toshihiko Nagano , Michihiko Nishigaki
发明人： Takashi Kawakubo , Toshihiko Nagano , Michihiko Nishigaki
IPC分类号： H01G5/16 , H01L41/04
CPC分类号： H01G5/0136 , B81B3/0021 , H01G5/16 , H01L41/094 , H02N1/006
摘要： An actuator includes a substrate, a fixed electrode provided on a major surface of the substrate, a movable beam opposed to the major surface and held above the substrate with a gap thereto, and a dielectric film provided between the fixed electrode and the movable beam. The dielectric film is made of aluminum nitride oriented along c-axis with an orientation full width at half maximum of 4.6 degrees or less.
摘要翻译：致动器包括基板，设置在基板的主表面上的固定电极，与主表面相对并且与基板间隔开并保持在其上的可移动光束，以及设置在固定电极和可移动光束之间的电介质膜。电介质膜由沿着c轴取向的氮化铝制成，取向全宽度为半径为4.6度以下。

75. 发明授权

US07490390B2 Method of manufacturing a voltage controlled oscillator 失效
标题翻译：制造压控振荡器的方法
公开(公告)号：US07490390B2
公开(公告)日：2009-02-17
申请号：US11741473
申请日：2007-04-27
申请人： Takashi Kawakubo , Kazuhide Abe , Mayumi Morizuka
发明人： Takashi Kawakubo , Kazuhide Abe , Mayumi Morizuka
IPC分类号： H04R17/10
CPC分类号： H03H9/173 , H03B5/326 , H03B5/366 , H03H9/0542 , H03H2009/02204 , Y10T29/42 , Y10T29/43 , Y10T29/49005 , Y10T29/49155
摘要： A manufacturing method is provided for a voltage controlled oscillator comprising an thin film BAW resonator and a variable capacitor element. The thin film BAW resonator includes an anchor section formed on a Si substrate, a lower electrode supported on the anchor section and positioned to face the Si substrate, a first piezoelectric film formed on the lower electrode, and an upper electrode formed on the first piezoelectric film. The variable capacitor element includes a stationary electrode formed on a Si substrate, an anchor section formed on the Si substrate, a first electrode supported on the anchor section and positioned to face the Si substrate, a second piezoelectric film formed on the first electrode, and a second electrode formed on the second piezoelectric film.
摘要翻译：为包括薄膜BAW谐振器和可变电容器元件的压控振荡器提供制造方法。薄膜BAW谐振器包括形成在Si衬底上的锚定部分，支撑在锚固部分上并定位成面对Si衬底的下电极，形成在下电极上的第一压电膜，以及形成在第一压电电影。所述可变电容器元件包括形成在Si衬底上的固定电极，形成在所述Si衬底上的锚定部分，支撑在所述锚固部分上并且定位成面对所述Si衬底的第一电极，形成在所述第一电极上的第二压电膜，以及形成在第二压电膜上的第二电极。

76. 发明申请

US20050242687A1 Piezoelectric-driven MEMS device and method for manufacturing the same 失效
标题翻译：压电驱动MEMS器件及其制造方法
公开(公告)号：US20050242687A1
公开(公告)日：2005-11-03
申请号：US11115107
申请日：2005-04-27
申请人： Takashi Kawakubo , Toshihiko Nagano , Kazuhide Abe , Michihiko Nishigaki
发明人： Takashi Kawakubo , Toshihiko Nagano , Kazuhide Abe , Michihiko Nishigaki
IPC分类号： B81B3/00 , H01G5/18 , H01G7/06 , H01H57/00 , H01H59/00 , H01L41/08 , H01L41/09 , H01L41/18 , H01L41/187 , H01L41/22 , H01L41/29 , H02N1/00 , H03H9/24
CPC分类号： H01H57/00 , B81B3/0021 , H01G5/16 , H01G5/18 , H01H59/0009 , H01H2057/006 , H01L41/0933 , H01L41/094
摘要： A piezoelectric-driven MEMS device can be fabricated reliably and consistently. The piezoelectric-driven MEMS device includes: a movable flat beam having a piezoelectric film disposed above a substrate with a recessed portion such that the piezoelectric film is bridged over the recessed portion, piezoelectric drive mechanisms disposed at both ends of the piezoelectric film and configured to drive the piezoelectric film, and a first electrode disposed at the center of the substrate-side of the piezoelectric film, and a second electrode disposed on a flat part of the recessed portion of the substrate and facing the first electrode of the movable flat beam.
摘要翻译：可以可靠且一致地制造压电驱动的MEMS器件。压电驱动MEMS器件包括：可移动平板光束，其具有设置在具有凹部的基板上方的压电膜，使得压电膜桥接在凹部上，压电驱动机构设置在压电膜的两端并被配置为驱动所述压电膜，以及设置在所述压电膜的基板侧的中心的第一电极，以及设置在所述基板的所述凹部的平坦部分上并且面对所述可动平坦梁的所述第一电极的第二电极。

77. 发明申请

US20050099236A1 Voltage controlled oscillator 失效
标题翻译：压控振荡器
公开(公告)号：US20050099236A1
公开(公告)日：2005-05-12
申请号：US10935264
申请日：2004-09-08
申请人： Takashi Kawakubo , Kazuhide Abe , Mayumi Morizuka
发明人： Takashi Kawakubo , Kazuhide Abe , Mayumi Morizuka
IPC分类号： H03B5/30 , H03B5/32 , H03B5/36 , H03H9/02 , H03H9/05 , H03H9/17 , H03H9/00
CPC分类号： H03H9/173 , H03B5/326 , H03B5/366 , H03H9/0542 , H03H2009/02204 , Y10T29/42 , Y10T29/43 , Y10T29/49005 , Y10T29/49155
摘要： The present invention provides a voltage controlled oscillator comprising an thin film BAW resonator and a variable capacitor element. The thin film BAW resonator includes an anchor section formed on a Si substrate, a lower electrode supported on the anchor section and positioned to face the Si substrate, a first piezoelectric film formed on the lower electrode, and an upper electrode formed on the first piezoelectric film. On the other hand, the variable capacitor element includes a stationary electrode formed on a Si substrate, an anchor section formed on the Si substrate, a first electrode supported on the anchor section and positioned to face the Si substrate, a second piezoelectric film formed on the first electrode, and a second electrode formed on the second piezoelectric film.
摘要翻译：本发明提供一种包括薄膜BAW谐振器和可变电容器元件的压控振荡器。薄膜BAW谐振器包括形成在Si衬底上的锚定部分，支撑在锚固部分上并定位成面对Si衬底的下电极，形成在下电极上的第一压电膜，以及形成在第一压电电影。另一方面，可变电容器元件包括形成在Si衬底上的固定电极，形成在Si衬底上的锚定部分，支撑在锚定部分上并且定位成面对Si衬底的第一电极，形成在第二压电膜上的第二压电膜第一电极和形成在第二压电膜上的第二电极。

78. 发明授权

US06198652B1 Non-volatile semiconductor integrated memory device 失效
标题翻译：非易失性半导体集成存储器件
公开(公告)号：US06198652B1
公开(公告)日：2001-03-06
申请号：US09289940
申请日：1999-04-13
申请人： Takashi Kawakubo , Kazuhide Abe , Daisaburo Takashima
发明人： Takashi Kawakubo , Kazuhide Abe , Daisaburo Takashima
IPC分类号： G11C1122
CPC分类号： H01L27/11502 , G11C11/22 , G11C11/223
摘要： A semiconductor integrated memory device comprises a plurality of memory cell blocks, which are formed in the form of a matrix and each of which comprises: a memory cell chain including a plurality of units, each comprising a ferroelectric memory capacitor and a control transistor connected in parallel thereto; a reference capacitor of a unit comprising a reference capacitor and a control transistor connected in parallel thereto; a read transistor having a gate electrode connected to a connection point between the memory cell chain and the reference cell; and a control transistor for adjusting potentials of storage node which is a connection point of the first electrode of the memory capacitor, the third electrode of the reference capacitor and the read transistor. With this construction, the semiconductor integrated memory device is able to be easily produced, to stably retain a ferroelectric polarization and to scale down.
摘要翻译：半导体集成存储器件包括以矩阵形式形成的多个存储器单元块，每个存储单元块包括：包括多个单元的存储单元链，每个单元包括铁电存储电容器和连接在其上的控制晶体管平行于包括参考电容器和与其并联连接的控制晶体管的单元的参考电容器; 读取晶体管，其具有连接到存储器单元链和参考单元之间的连接点的栅电极; 以及用于调整作为存储电容器的第一电极，参考电容器的第三电极和读取晶体管的连接点的存储节点的电位的控制晶体管。利用这种结构，能够容易地制造半导体集成存储器件，以稳定地保持铁电极化并缩小。

79. 发明授权

US6165837A Semiconductor integrated memory manufacturing method and device 失效
标题翻译：半导体集成存储器制造方法和装置
公开(公告)号：US6165837A
公开(公告)日：2000-12-26
申请号：US276727
申请日：1999-03-26
申请人： Takashi Kawakubo , Noboru Fukushima
发明人： Takashi Kawakubo , Noboru Fukushima
IPC分类号： H01L21/8247 , H01L21/8242 , H01L21/8246 , H01L27/10 , H01L27/105 , H01L27/108 , H01L27/12 , H01L29/788 , H01L29/792
CPC分类号： H01L27/10858 , H01L27/10832 , H01L27/10867 , H01L27/10873 , H01L27/1203
摘要： A method of manufacturing a semiconductor integrated memory device including a plurality of a memory cells, and the semiconductor memory device, wherein each memory cell includes a transistor and a capacitor. The capacitor is formed of first and second electrodes and a dielectric layer. The first electrode and the dielectric layer are successively formed on a main surface of a semiconductor substrate by epitaxial growth. A region of the capacitor is removed to expose a region of the main surface of the substrate under the capacitor. A single crystal semiconductor layer is formed on the exposed region of the substrate by epitaxial growth, and the transistor is formed on the single crystal semiconductor layer, thereby to obtain a device having high integration density integration and preferred performance with high yield.
摘要翻译：一种制造包括多个存储单元的半导体集成存储器件和半导体存储器件的方法，其中每个存储单元包括晶体管和电容器。电容器由第一和第二电极和电介质层形成。第一电极和电介质层通过外延生长连续地形成在半导体衬底的主表面上。去除电容器的区域以暴露电容器下的衬底的主表面的区域。通过外延生长在衬底的暴露区域上形成单晶半导体层，并且在单晶半导体层上形成晶体管，从而获得具有高集成度集成的器件，并且以高产率获得优选的性能。

80. 发明授权

US06001461A Electronic parts and manufacturing method thereof 失效
标题翻译：电子零件及其制造方法
公开(公告)号：US06001461A
公开(公告)日：1999-12-14
申请号：US771388
申请日：1996-12-19
申请人： Hiroshi Toyoda , Hisashi Kaneko , Masahiko Hasunuma , Takashi Kawanoue , Hiroshi Tomita , Akihiro Kajita , Masami Miyauchi , Takashi Kawakubo , Sachiyo Ito
发明人： Hiroshi Toyoda , Hisashi Kaneko , Masahiko Hasunuma , Takashi Kawanoue , Hiroshi Tomita , Akihiro Kajita , Masami Miyauchi , Takashi Kawakubo , Sachiyo Ito
IPC分类号： H01L21/3205 , H01L23/528 , H01L23/532 , B32B9/00
CPC分类号： H01L23/532 , H01L21/32051 , H01L23/5283 , H01L23/53223 , H01L2924/0002 , Y10T428/2457 , Y10T428/24926
摘要： An electronic part comprising an amorphous thin film formed on a substrate; and a metal wiring formed on the surface of the amorphous thin film; wherein an interatomic distance corresponding to a peak of halo pattern appearing in diffraction measurement of the amorphous thin film approximately matches with a spacing of a particular crystal plane defined with the first nearest interatomic distance of the metal wiring. An electronic part provided with a metal wiring formed of highly orientated crystal wherein half or more of all grain boundaries are small angle grain boundaries defined by one of grain boundaries with a relative misorientation of 10.degree. or less in tilt, rotation and combination thereof around orientation axes of neighboring crystal grains; coincidence boundaries where a .SIGMA. value is 10 or less; and grain boundaries with a relative misorientation of 3.degree. or less from the coincidence boundary. A method for manufacturing an electronic part, comprising the step of depositing a conductor layer which is mainly formed of one selected from Al and Cu on a substrate via an insulative layer, a barrier layer, a contact layer or an amorphous thin film layer wherein one element selected from Ga, In, Cd, Bi, Pb, Sn and Tl is supplied before or during the deposition of the conductor layer.
摘要翻译：一种电子部件，包括形成在基板上的非晶薄膜; 以及形成在所述非晶薄膜的表面上的金属布线; 其中对应于在非晶薄膜的衍射测量中出现的晕轮图案的峰值的原子间距离大致与由金属布线的第一最接近的原子间距离限定的特定晶面的间隔相匹配。一种电子部件，其具有由高取向晶体形成的金属布线，其中所有晶界的一半以上是由倾斜，旋转及其组合在取向方向上的相位差取向为10°以下的晶界之一限定的小角度晶界相邻晶粒的轴; SIGMA值为10以下的重合边界; 晶界与重合边界的相对误差为3°以下。一种电子部件的制造方法，其特征在于，包括以下步骤：通过绝缘层，阻挡层，接触层或无定形薄膜层，在基板上沉积主要由选自Al和Cu的一个导体层形成的步骤，其中一个选自Ga，In，Cd，Bi，Pb，Sn和Tl的元素在导体层的沉积之前或期间提供。

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