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71. 发明申请

US20090321819A1 Semiconductor device having super junction 有权
标题翻译：具有超结的半导体器件
公开(公告)号：US20090321819A1
公开(公告)日：2009-12-31
申请号：US12314786
申请日：2008-12-16
申请人： Yuma Kagata , Jun Sakakibara , Hitoshi Yamaguchi
发明人： Yuma Kagata , Jun Sakakibara , Hitoshi Yamaguchi
IPC分类号： H01L29/78
CPC分类号： H01L29/7813 , H01L29/0634 , H01L29/66734
摘要： A semiconductor device includes: a first semiconductor layer; a PN column layer having first and second column layers; and a second semiconductor layer. Each of the first and second column layers includes first and second columns alternately arranged along with a horizontal direction. The first and second column layers respectively have first and second impurity amount differences defined at a predetermined depth by subtracting an impurity amount in the second column from an impurity amount in the first column. The first impurity amount difference is constant and positive. The second impurity amount difference is constant and negative.
摘要翻译：一种半导体器件包括：第一半导体层; PN列层，其具有第一和第二列层; 和第二半导体层。第一和第二列层中的每一个包括与水平方向一起交替布置的第一和第二列。通过从第一列中的杂质量减去第二列中的杂质量，第一和第二列层分别具有在预定深度处限定的第一和第二杂质量差异。第一杂质量差为常数和正数。第二杂质量差为常数和负数。

72. 发明申请

US20090086294A1 IMAGE READING APPARATUS AND IMAGE READING METHOD 失效
标题翻译：图像读取装置和图像读取方法
公开(公告)号：US20090086294A1
公开(公告)日：2009-04-02
申请号：US11865273
申请日：2007-10-01
申请人： Jun Sakakibara
发明人： Jun Sakakibara
IPC分类号： H04N1/46
CPC分类号： H04N1/40 , H04N1/40062
摘要： There is provide a technique which can contribute to reduction of data capacity of image data read from an original document in an image reading apparatus, and can contribute to realization of a flexible image processing to meet user's requests. There are included a first image reading unit to read an image in monochrome from an original document at a first resolution, a second image reading unit to read an image in color from an original document at a second resolution lower than the first resolution, a position information acquisition unit to acquire position information indicating, in respective image data read by the first and the second image reading units from the same original document, corresponding positions of respective pixels on the original document, a color information acquisition unit to acquire color information indicating colors of the respective pixels in the respective image data, and a storage unit to associate the position information acquired by the position information acquisition unit with the color information acquired by the color information acquisition unit with respect to the pixel corresponding to the position information and to store them in a specified storage area.
摘要翻译：提供了可以有助于减少从图像读取装置中的原始文档读取的图像数据的数据容量的技术，并且可以有助于实现灵活的图像处理以满足用户的请求。包括第一图像读取单元，以第一分辨率从原始文档以单色读取图像;第二图像读取单元，以比第一分辨率低的第二分辨率从原始文档读取颜色的图像;位置信息获取单元，用于从相同的原始文档获取表示在第一和第二图像读取单元读取的各个图像数据中的位置信息，原始文档上的各个像素的对应位置，颜色信息获取单元，用于获取指示颜色的颜色信息以及存储单元，用于将由位置信息获取单元获取的位置信息与由颜色信息获取单元获取的颜色信息相对于与位置信息对应的像素相关联并存储他们在指定的存储区域。

73. 发明申请

US20090086293A1 IMAGE PROCESSING APPARATUS AND IMAGE PROCESSING METHOD 有权
标题翻译：图像处理装置和图像处理方法
公开(公告)号：US20090086293A1
公开(公告)日：2009-04-02
申请号：US11865270
申请日：2007-10-01
申请人： Jun Sakakibara
发明人： Jun Sakakibara
IPC分类号： H04N1/46
CPC分类号： H04N1/40 , H04N1/486 , H04N1/56 , H04N1/58
摘要： There is provided a technique to make, in a case where a monochrome image is generated based on a color image, a chromatic image region on the color image distinguishable on the monochrome image. There are included a first image reading unit to acquire monochrome image data by reading an image in monochrome from an original document, a second image reading unit to acquire color image data by reading an image in color from an original document, an extraction image generation unit to generate image data by extracting a chromatic image region in the color image data read by the second image reading unit, and a luminance correction unit to make a correction to increase, based on the image data generated by the extraction image generation unit, luminance of a monochrome signal which is included in the monochrome image data read by the first image reading unit and corresponds to the chromatic image region extracted by the extraction image generation unit.
摘要翻译：提供了一种技术，在基于彩色图像生成单色图像的情况下，使得在单色图像上可辨别的彩色图像上的彩色图像区域。包括第一图像读取单元，通过从原始文档读取单色图像来获取单色图像数据;第二图像读取单元，通过从原始文档读取彩色图像来获取彩色图像数据;提取图像生成单元通过提取由第二图像读取单元读取的彩色图像数据中的彩色图像区域产生图像数据，以及亮度校正单元，用于基于由提取图像生成单元生成的图像数据进行校正以增加亮度包括在由第一图像读取单元读取的单色图像数据中并对应于由提取图像生成单元提取的彩色图像区域的单色信号。

74. 发明申请

US20090032965A1 Seminconductor device having P-N column portion 有权
标题翻译：具有P-N柱部分的半导体器件
公开(公告)号：US20090032965A1
公开(公告)日：2009-02-05
申请号：US12216808
申请日：2008-07-10
申请人： Yasushi Urakami , Hitoshi Yamaguchi , Jun Sakakibara
发明人： Yasushi Urakami , Hitoshi Yamaguchi , Jun Sakakibara
IPC分类号： H01L23/48
CPC分类号： H01L29/7813 , H01L29/0615 , H01L29/0619 , H01L29/0634 , H01L29/0638 , H01L29/0878 , H01L29/1095 , H01L29/402 , H01L29/41741 , H01L29/7811 , H01L2924/0002 , H01L2924/00
摘要： A semiconductor device includes: a first semiconductor layer; a p-n column portion over the first semiconductor layer and including second and third semiconductor layers, which are alternately arranged; and a peripheral portion adjacently to the p-n column portion and including a fourth semiconductor layer. An end second semiconductor layer has an impurity amount equal to or larger than a half of other second semiconductor layers. The third semiconductor layers include a large impurity amount portion adjacent to the end second semiconductor layer. The large impurity amount portion includes at least one third semiconductor layer having an impurity amount larger than an impurity amount of other third semiconductor layers.
摘要翻译：一种半导体器件包括：第一半导体层; 在第一半导体层上的p-n列部分，并且包括交替布置的第二和第三半导体层; 以及与p-n列部分相邻并包括第四半导体层的周边部分。端部第二半导体层的杂质量等于或大于其它第二半导体层的一半。第三半导体层包括与端部第二半导体层相邻的大杂质量部分。大杂质量部分包括杂质量大于其它第三半导体层的杂质量的至少一个第三半导体层。

75. 发明申请

US20080246096A1 Semiconductor device including schottky barrier diode and method of manufacturing the same 有权
标题翻译：包括肖特基势垒二极管的半导体器件及其制造方法
公开(公告)号：US20080246096A1
公开(公告)日：2008-10-09
申请号：US12078369
申请日：2008-03-31
申请人： Jun Sakakibara , Hitoshi Yamaguchi
发明人： Jun Sakakibara , Hitoshi Yamaguchi
IPC分类号： H01L27/06 , H01L21/329 , H01L29/872
CPC分类号： H01L29/872 , H01L29/0634 , H01L29/0878 , H01L29/32 , H01L29/7806 , H01L29/861
摘要： A semiconductor device includes a substrate, a plurality of first columns having a first conductivity type, a plurality of second columns having a second conductivity type, a first electrode, and a second electrode. The first columns and the second columns are alternately arranged on the substrate to provide a super junction structure. The first electrode is disposed on the super junction structure, forms schottky junctions with the first columns, and forms ohmic junctions with the second columns. The second electrode is disposed on the substrate on an opposite side of the super junction structure. At least a part of the substrate and the super junction structure has lattice defects to provide a lifetime control region at which a lifetime of a minority carrier is controlled to be short.
摘要翻译：半导体器件包括衬底，具有第一导电类型的多个第一列，具有第二导电类型的多个第二列，第一电极和第二电极。第一列和第二列交替地布置在基板上以提供超连接结构。第一电极设置在超结结构上，与第一列形成肖特基结，并与第二列形成欧姆结。第二电极设置在超级结结构的相对侧上的衬底上。衬底和超结结构的至少一部分具有晶格缺陷，以提供寿命控制区域，在该寿命期内少数载流子的寿命被控制为短。

76. 发明申请

US20070120201A1 Semiconductor device having super junction MOS transistor and method for manufacturing the same 有权
标题翻译：具有超结MOS晶体管的半导体器件及其制造方法
公开(公告)号：US20070120201A1
公开(公告)日：2007-05-31
申请号：US11598646
申请日：2006-11-14
申请人： Hitoshi Yamaguchi , Jun Sakakibara
发明人： Hitoshi Yamaguchi , Jun Sakakibara
IPC分类号： H01L29/76
CPC分类号： H01L29/66712 , H01L29/0619 , H01L29/0634 , H01L29/0696 , H01L29/1095 , H01L29/66734 , H01L29/7806 , H01L29/7811 , H01L29/7813
摘要： A semiconductor device having a super junction MOS transistor includes: a semiconductor substrate; a first semiconductor layer on the substrate; a second semiconductor layer on the first semiconductor layer; a channel forming region on a first surface portion of the second semiconductor layer; a source region on a first surface portion of the channel forming region; a source contact region on a second surface portion of the channel forming region; a gate electrode on a third surface portion of the channel forming region; a source electrode on the source region and the source contact region; a drain electrode on a backside of the substrate; and an anode electrode on a second surface portion of the second semiconductor layer. The anode electrode provides a Schottky barrier diode.
摘要翻译：具有超结MOS晶体管的半导体器件包括：半导体衬底; 在所述基板上的第一半导体层; 在所述第一半导体层上的第二半导体层; 在第二半导体层的第一表面部分上的沟道形成区; 在所述沟道形成区域的第一表面部分上的源极区域; 在所述沟道形成区域的第二表面部分上的源极接触区域; 在沟道形成区域的第三表面部分上的栅电极; 源极区域和源极接触区域上的源极电极; 位于衬底背面的漏电极; 以及在所述第二半导体层的第二表面部分上的阳极电极。阳极电极提供肖特基势垒二极管。

77. 发明申请

US20060275980A1 Semiconductor device and method for manufacturing the same 失效
公开(公告)号：US20060275980A1
公开(公告)日：2006-12-07
申请号：US11434124
申请日：2006-05-16
申请人： Jun Sakakibara , Hitoshi Yamaguchi , Naohiro Suzuki
发明人： Jun Sakakibara , Hitoshi Yamaguchi , Naohiro Suzuki
IPC分类号： H01L21/8242 , H01L29/76
CPC分类号： H01L29/861 , H01L27/0255 , H01L27/0629 , H01L29/0684 , H01L29/0692 , H01L29/4236 , H01L29/7804 , H01L29/7813 , H01L29/7818
摘要： A semiconductor device includes: a semiconductor substrate having a first surface and a second surface, wherein the substrate has a first conductive type; a first trench extending from the first surface of the semiconductor substrate in a depth direction; and an epitaxial semiconductor layer having a second conductive type, wherein the epitaxial semiconductor layer is disposed in the first trench. The first trench includes an inner wall as an interface between the semiconductor substrate and the epitaxial semiconductor layer so that the interface provides a PN junction. The first trench has an aspect ratio equal to or larger than 1.

78. 发明申请

US20050230747A1 Semiconductor device 审中-公开
标题翻译：半导体器件
公开(公告)号：US20050230747A1
公开(公告)日：2005-10-20
申请号：US11156451
申请日：2005-06-21
申请人： Naohiro Suzuki , Jun Sakakibara , Yoshitaka Noda , Hitoshi Yamaguchi
发明人： Naohiro Suzuki , Jun Sakakibara , Yoshitaka Noda , Hitoshi Yamaguchi
IPC分类号： H01L29/41 , H01L21/336 , H01L21/8222 , H01L21/8234 , H01L21/8248 , H01L21/8249 , H01L21/84 , H01L27/06 , H01L27/08 , H01L27/088 , H01L27/12 , H01L29/06 , H01L29/08 , H01L29/423 , H01L29/49 , H01L29/732 , H01L29/739 , H01L29/76 , H01L29/78 , H01L29/786 , H01L31/0328 , H01L31/0336 , H01L31/072 , H01L31/109
CPC分类号： H01L29/0696 , H01L29/0847 , H01L29/0878 , H01L29/1095 , H01L29/4236 , H01L29/66681 , H01L29/7394 , H01L29/7824 , H01L29/7825
摘要： A semiconductor device includes a base P region, a source N+ region, and a drain N+ region formed in a surface layer portion on a principal surface in an N− silicon layer. In the surface layer portion on the principal surface, an N well region is formed deeper than the drain N+ region in a region including the drain N+ region and is in contact with the base P region. A trench is formed so as to penetrate the base P region in a direction toward the drain N+ region from the source N+ region as a planar structure. A gate electrode is formed via a gate insulating film in the inside of the trench.
摘要翻译：半导体器件包括在N - 硅层。在主表面的表层部分，在包括漏极N + SUP区域的区域中，N阱区形成得比漏极N + + SUP区域深，并与之接触与基地区P。形成沟槽，以从源极N +区域的漏极N + SUP区域的方向穿过基极P区域作为平面结构。栅极电极通过沟槽内部的栅极绝缘膜形成。

79. 发明申请

US20050199781A1 Color signal compensation 失效
标题翻译：彩色信号补偿
公开(公告)号：US20050199781A1
公开(公告)日：2005-09-15
申请号：US10796820
申请日：2004-03-09
申请人： Yoshikatsu Kamisuwa , Koji Tanimoto , Jun Sakakibara , Kunihiko Miura
发明人： Yoshikatsu Kamisuwa , Koji Tanimoto , Jun Sakakibara , Kunihiko Miura
IPC分类号： G03F3/08 , H01L27/00 , H04N1/40 , H04N1/46 , H04N1/48 , H04N5/335 , H04N9/04 , H04N9/07
CPC分类号： H04N9/045 , H04N1/486 , H04N5/3692
摘要： Methods and apparatus for color signal compensation are disclosed. A quality of one type of signal is enhanced using a second type of signal, wherein the second type of signal has a higher quality than that of the unenhanced first type of signal. This may be used in an image forming apparatus for scanning a color image, and using higher-resolution monochrome signals to enhance the resolution of lower-resolution color signals.
摘要翻译：公开了用于颜色信号补偿的方法和装置。使用第二类型的信号来增强一种类型的信号的质量，其中第二类型的信号具有比未增强的第一类型信号的质量更高的质量。这可以用于用于扫描彩色图像的图像形成装置，并且使用更高分辨率的单色信号来增强低分辨率彩色信号的分辨率。

80. 发明授权

US06525375B1 Semiconductor device having trench filled up with gate electrode 有权
标题翻译：具有填充有栅电极的沟槽的半导体器件
公开(公告)号：US06525375B1
公开(公告)日：2003-02-25
申请号：US09688154
申请日：2000-10-16
申请人： Hitoshi Yamaguchi , Toshio Sakakibara , Jun Sakakibara , Takumi Shibata , Toshiyuki Morishita
发明人： Hitoshi Yamaguchi , Toshio Sakakibara , Jun Sakakibara , Takumi Shibata , Toshiyuki Morishita
IPC分类号： H01L2976
CPC分类号： H01L29/7813 , H01L29/04 , H01L29/045 , H01L29/0696 , H01L29/41741 , H01L29/41766 , H01L29/4236 , H01L29/4238 , H01L29/66348 , H01L29/66378 , H01L29/66659 , H01L29/66704 , H01L29/66734 , H01L29/66787 , H01L29/7393 , H01L29/7397 , H01L29/749 , H01L29/78 , H01L29/7803 , H01L29/7809 , H01L29/7816 , H01L29/7817 , H01L29/7824 , H01L29/7825 , H01L29/7828 , H01L29/7835
摘要： In a semiconductor device, a p-type base region is provided in an n−-type substrate to extend from a principal surface of the substrate in a perpendicular direction to the principal surface. An n+-type source region extends in the p-type base region from the principal surface in the perpendicular direction, and an n+-type drain region extends in the substrate separately from the p-type base region with a drift region interposed therebetween. A trench is formed to penetrate the p-type base region from the n+-type source region in a direction parallel to the principal surface. A gate electrode is formed in the trench through a gate insulating film. Accordingly, a channel region can be formed with a channel width in a depth direction of the trench when a voltage is applied to the gate electrode.
摘要翻译：在半导体器件中，p型基极区域设置在n型衬底中，以从垂直于主表面的方向从衬底的主表面延伸。 n +型源极区域在垂直方向上从主表面延伸到p型基极区域中，并且n +型漏极区域在p型基极区域中与P型基极区域分开延伸，并且其间插入漂移区域。形成沟槽，以在平行于主表面的方向上从n +型源极区域穿透p型基极区域。栅电极通过栅极绝缘膜形成在沟槽中。因此，当向栅电极施加电压时，可以在沟槽的深度方向上形成沟道区域。

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