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71. 发明授权

US07449099B1 Selectively accelerated plating of metal features 失效
标题翻译：选择性加速电镀金属功能
公开(公告)号：US07449099B1
公开(公告)日：2008-11-11
申请号：US10947085
申请日：2004-09-21
申请人： Steven T. Mayer , John Stephen Drewery
发明人： Steven T. Mayer , John Stephen Drewery
IPC分类号： C25D5/02
CPC分类号： H05K3/243 , H05K3/108 , H05K2201/0367 , H05K2201/09745 , H05K2203/0392 , H05K2203/122
摘要： To make a metal feature, a non-plateable layer is applied to a workpiece surface and then patterned to form a first plating region and a first non-plating region. Then, metal is deposited on the workpiece to form a raised field region in said first plating region and a recessed region in said first non-plating region. Then, an accelerator film is applied globally on the workpiece. A portion of the accelerator film is selectively removed from the field region, and another portion of the accelerator film remains in the recessed acceleration region. Then, metal is deposited onto the workpiece, and the metal deposits at an accelerated rate in the acceleration region, resulting in a greater thickness of metal in the acceleration region compared to metal in the non-activated field region. Then, metal is completely removed from the field region, thereby forming the metal feature.
摘要翻译：为了制造金属特征，将不可镀层施加到工件表面，然后被图案化以形成第一镀层区域和第一非镀层区域。然后，金属沉积在工件上，以在所述第一镀覆区域中形成凸起区域，并在所述第一非镀覆区域中形成凹陷区域。然后，加工膜全部应用于工件上。加速膜的一部分从场区域选择性地去除，并且加速膜的另一部分残留在凹入加速区域中。然后，金属沉积在工件上，并且金属在加速区域中以加速的速率沉积，导致与非激活场区域中的金属相比，加速区域中的金属厚度更大。然后，从场区域中完全去除金属，从而形成金属特征。

72. 发明授权

US07211175B1 Method and apparatus for potential controlled electroplating of fine patterns on semiconductor wafers 有权
标题翻译：用于在半导体晶片上精细图案的电位控制电镀的方法和装置
公开(公告)号：US07211175B1
公开(公告)日：2007-05-01
申请号：US10365577
申请日：2003-02-11
申请人： Steven T. Mayer , Jonathan Reid , Robert Contolini
发明人： Steven T. Mayer , Jonathan Reid , Robert Contolini
IPC分类号： C25B15/02 , C25D17/00
CPC分类号： C25D17/001 , C25D17/005 , C25D21/12 , H01L21/2885 , H01L21/76877
摘要： Controlled-potential electroplating provides an effective method of electroplating metals onto the surfaces of high aspect ratio recessed features of integrated circuit devices. Methods are provided to mitigate corrosion of a metal seed layer on recessed features due to contact of the seed layer with an electrolyte solution. The potential can also be controlled to provide conformal plating over the seed layer and bottom-up filling of the recessed features. For each of these processes, a constant cathodic voltage, pulsed cathodic voltage, or ramped cathodic voltage can be used. An apparatus for controlled-potential electroplating includes a reference electrode placed near the surface to be plated and at least one cathode sense lead to measure the potential at points on the circumference of the integrated circuit structure.
摘要翻译：控制电位电镀提供了将金属电镀到集成电路器件的高纵横比凹陷特征的表面上的有效方法。提供了一种方法，用于减轻由于种子层与电解质溶液的接触而导致的凹陷特征上的金属种子层的腐蚀。还可以控制电位以在种子层上提供适形电镀，并且自下而上地填充凹陷特征。对于这些处理中的每一个，可以使用恒定的阴极电压，脉冲阴极电压或斜坡阴极电压。用于控制电位电镀的装置包括放置在待镀表面附近的参考电极和至少一个阴极检测引线，以测量集成电路结构的圆周上的点处的电位。

73. 发明授权

US5932185A Method for making thin carbon foam electrodes 失效
标题翻译：制造薄碳泡沫电极的方法
公开(公告)号：US5932185A
公开(公告)日：1999-08-03
申请号：US110003
申请日：1993-08-23
申请人： Richard W. Pekala , Steven T. Mayer , James L. Kaschmitter , Robert L. Morrison
发明人： Richard W. Pekala , Steven T. Mayer , James L. Kaschmitter , Robert L. Morrison
IPC分类号： B01J23/18 , B01J37/08 , B22F3/11 , C04B38/00 , C04B41/50 , C04B41/85 , H01G9/00 , H01G9/155 , H01M4/36 , H01M4/58 , C01B31/00
CPC分类号： H01G9/155 , B01J23/18 , B01J37/084 , B22F3/114 , C04B38/0022 , C04B41/5001 , C04B41/85 , H01M4/36 , H01M4/587 , C02F1/4691 , Y02E60/13
摘要： A method for fabricating thin, flat carbon electrodes by infiltrating highly porous carbon papers, membranes, felts, metal fibers/powders, or fabrics with an appropriate carbon foam precursor material. The infiltrated carbon paper, for example, is then cured to form a gel-saturated carbon paper, which is subsequently dried and pyrolyzed to form a thin sheet of porous carbon. The material readily stays flat and flexible during curing and pyrolyzing to form thin sheets. Precursor materials include polyacrylonitrile (PAN), polymethylacrylonitrile (PMAN), resorcinol/formaldehyde, catechol/formaldehyde, phenol/formaldehyde, etc., or mixtures thereof. These thin films are ideal for use as high power and energy electrodes in batteries, capacitors, and fuel cells, and are potentially useful for capacitive deionization, filtration and catalysis.
摘要翻译：通过用合适的碳泡沫前体材料渗透高度多孔碳纸，膜，毡，金属纤维/粉末或织物来制造薄的扁平碳电极的方法。然后将渗透的碳纸固化以形成凝胶饱和碳纸，随后将其干燥并热解，形成多孔碳薄片。该材料在固化和热解过程中易于保持平坦和柔性，形成薄片。前体材料包括聚丙烯腈（PAN），聚甲基丙烯腈（PMAN），间苯二酚/甲醛，邻苯二酚/甲醛，苯酚/甲醛等，或其混合物。这些薄膜非常适用于电池，电容器和燃料电池中的高功率和高能量电极，并且可用于电容去离子，过滤和催化。

74. 发明授权

US5636437A Fabricating solid carbon porous electrodes from powders 失效
标题翻译：从粉末制造固体碳多孔电极
公开(公告)号：US5636437A
公开(公告)日：1997-06-10
申请号：US440168
申请日：1995-05-12
申请人： James L. Kaschmitter , Tri D. Tran , John H. Feikert , Steven T. Mayer
发明人： James L. Kaschmitter , Tri D. Tran , John H. Feikert , Steven T. Mayer
IPC分类号： C02F1/461 , H01M4/02 , H01M4/58 , H01M4/96 , H01R43/00
CPC分类号： H01M4/587 , H01M4/13 , H01M4/96 , C02F1/46109 , C02F1/4691 , Y02P70/54 , Y10T29/49117
摘要： Fabrication of conductive solid porous carbon electrodes for use in batteries, double layer capacitors, fuel cells, capacitive dionization, and waste treatment. Electrodes fabricated from low surface area (
摘要翻译：用于电池，双层电容器，燃料电池，电容式去离子和废物处理的导电固体多孔碳电极的制造。由低表面积（<50m2 / gm）石墨和焦炭制成的电极表现出优异的可逆锂嵌入特性，使其成为高压锂离子（锂离子）电池中用作阳极的理想选择。具有较高表面积的电极由碳黑气凝胶粉末，碳气凝胶微球，活性炭等制成，产生具有优异双层容量的高导电性碳复合材料，可用于双层电容器，或用于双层电容器液体流的电容去离子和/或废物处理。通过添加高表面积碳的金属催化剂，可以制造燃料电池电极。

75. 发明授权

US5096550A Method and apparatus for spatially uniform electropolishing and electrolytic etching 失效
标题翻译：用于空间均匀电解和电解蚀刻的方法和装置
公开(公告)号：US5096550A
公开(公告)日：1992-03-17
申请号：US597225
申请日：1990-10-15
申请人： Steven T. Mayer , Robert J. Contolini , Anthony F. Bernhardt
发明人： Steven T. Mayer , Robert J. Contolini , Anthony F. Bernhardt
IPC分类号： C25F3/02 , C25F3/16 , C25F7/00
CPC分类号： C25F7/00 , C25F3/02 , C25F3/16 , Y10S204/07
摘要： In an electropolishing or electrolytic etching apparatus the anode is separated from the cathode to prevent bubble transport to the anode and to produce a uniform current distribution at the anode by means of a solid nonconducting anode-cathode barrier. The anode extends into the top of the barrier and the cathode is outside the barrier. A virtual cathode hole formed in the bottom of the barrier below the level of the cathode permits current flow while preventing bubble transport. The anode is rotatable and oriented horizontally facing down. An extended anode is formed by mounting the workpiece in a holder which extends the electropolishing or etching area beyond the edge of the workpiece to reduce edge effects at the workpiece. A reference electrode controls cell voltage. Endpoint detection and current shut-off stop polishing. Spatially uniform polishing or etching can be rapidly performed.
摘要翻译：在电解抛光或电解蚀刻装置中，阳极与阴极分离，以防止气泡传输到阳极，并通过固体非导电阳极 - 阴极屏障在阳极处产生均匀的电流分布。阳极延伸到屏障的顶部，阴极在屏障外。形成在阴极底部的阴极底部的虚拟阴极孔允许电流流动，同时防止气泡输送。阳极可旋转并水平定向朝下。扩展阳极通过将工件安装在将电解抛光或蚀刻区域延伸超过工件边缘的保持器中形成，以减少工件的边缘效应。参考电极控制电池电压。端点检测和电流切断停止抛光。可以快速进行空间均匀的抛光或蚀刻。

76. 发明授权

US4451900A Method and apparatus for text editing display 失效
标题翻译：用于文本编辑显示的方法和装置
公开(公告)号：US4451900A
公开(公告)日：1984-05-29
申请号：US335471
申请日：1981-12-29
申请人： Steven T. Mayer , Lawrence D. Emmons
发明人： Steven T. Mayer , Lawrence D. Emmons
IPC分类号： G06F17/21 , G06F9/00
CPC分类号： G06F17/212
摘要： In a word processing system that includes a printer for printing text material and a display screen for viewing portions of the display material, a graphical representation of a page of text is displayed for editing purposes, the graphical representation including a plurality of identically formed display elements each corresponding to one of the characters of the text.
摘要翻译：在包括用于打印文本材料的打印机和用于观看显示材料的部分的显示屏幕的文字处理系统中，显示文本页面的图形表示用于编辑目的，图形表示包括多个相同形式的显示元素每个对应于文本的一个字符。

77. 发明授权

US08858774B2 Electroplating apparatus for tailored uniformity profile 有权
标题翻译：用于定制均匀性曲线的电镀设备
公开(公告)号：US08858774B2
公开(公告)日：2014-10-14
申请号：US13438443
申请日：2012-04-03
申请人： Steven T. Mayer , David W. Porter , Bryan L. Buckalew , Robert Rash
发明人： Steven T. Mayer , David W. Porter , Bryan L. Buckalew , Robert Rash
IPC分类号： C25D17/00 , C25D21/12 , C25D7/12 , C25D5/18 , H01L21/288 , C25D17/12 , C25D21/10 , H01L21/768
CPC分类号： C25D5/00 , C25D5/04 , C25D5/18 , C25D7/123 , C25D17/001 , C25D17/002 , C25D17/007 , C25D17/008 , C25D17/06 , C25D17/12 , C25D21/10 , C25D21/12 , H01L21/2885 , H01L21/76873
摘要： Methods of electroplating metal on a substrate while controlling azimuthal uniformity, include, in one aspect, providing the substrate to the electroplating apparatus configured for rotating the substrate during electroplating, and electroplating the metal on the substrate while rotating the substrate relative to a shield such that a selected portion of the substrate at a selected azimuthal position dwells in a shielded area for a different amount of time than a second portion of the substrate having the same average arc length and the same average radial position and residing at a different angular (azimuthal) position. For example, a semiconductor wafer substrate can be rotated during electroplating slower or faster, when the selected portion of the substrate passes through the shielded area.
摘要翻译：在一方面，在控制方位均匀性的同时，在基板上电镀金属的方法包括在电镀期间为电镀设备提供基板，该电镀设备被配置为在电镀期间旋转基板，以及在将基板相对于屏蔽件旋转的同时使金属电镀，在选择的方位角位置的衬底的选定部分在屏蔽区域中停留不同于具有相同平均弧长和相同平均径向位置并且位于不同角度（方位角）处的基底的第二部分的时间量，位置。例如，当基板的选定部分通过屏蔽区域时，半导体晶片基板可以在电镀期间更快或更快地旋转。

78. 发明授权

US08795480B2 Control of electrolyte hydrodynamics for efficient mass transfer during electroplating 有权
标题翻译：电镀液中电解质流体动力学的有效传质控制
公开(公告)号：US08795480B2
公开(公告)日：2014-08-05
申请号：US13172642
申请日：2011-06-29
申请人： Steven T. Mayer , David W. Porter
发明人： Steven T. Mayer , David W. Porter
IPC分类号： C25D17/00 , C25D7/12 , C25D21/10
CPC分类号： C25D17/002 , C25D5/04 , C25D5/08 , C25D17/001 , C25D17/008 , C25D17/02 , C25D21/10
摘要： Described are apparatus and methods for electroplating one or more metals onto a substrate. Embodiments include electroplating apparatus configured for, and methods including, efficient mass transfer during plating so that highly uniform plating layers are obtained. In specific embodiments, the mass transfer is achieved using a combination of impinging flow and shear flow at the wafer surface.
摘要翻译：描述了将一种或多种金属电镀到基底上的装置和方法。实施例包括电镀设备，以及包括在电镀过程中有效传质的方法，从而获得高度均匀的镀层。在具体实施例中，使用在晶片表面处冲击流动和剪切流动的组合来实现传质。

79. 发明申请

US20130256146A1 CLEANING ELECTROPLATING SUBSTRATE HOLDERS USING REVERSE CURRENT DEPLATING 有权
标题翻译：使用反向电流去除清洁电镀基板支架
公开(公告)号：US20130256146A1
公开(公告)日：2013-10-03
申请号：US13853935
申请日：2013-03-29
申请人： Lee Peng Chua , Steven T. Mayer , Thomas A. Ponnuswamy , Santosh Kumar
发明人： Lee Peng Chua , Steven T. Mayer , Thomas A. Ponnuswamy , Santosh Kumar
IPC分类号： C25F1/00
CPC分类号： C25F1/00 , C25D17/001 , C25D17/06 , C25D21/00 , C25D21/12 , C25F7/00 , H01L21/67766 , H01L21/67769 , H01L21/68707 , Y10S901/02
摘要： Provided are cleaning methods and systems to remove unintended metallic deposits from electroplating apparatuses using reverse current deplating techniques. Such cleaning involves positioning a cleaning (deplating) disk in an electroplating cup similar to a regular processed substrate. The front surface of the cleaning disk includes a corrosion resistant conductive material to form electrical connections to deposits on the cup's surfaces. The disk is sealed in the cup and submerged into a plating solution. A reverse current is then applied to the front conductive surface of the disk to initiate deplating of the deposits. Sealing compression in the cup may change during cleaning to cause different deformation of the lip seal and to form new electrical connections to the deposits. The proposed cleaning may be applied to remove deposits formed during electroplating of alloys, in particular, tin-silver alloys widely used for semiconductor and wafer level packaging.
摘要翻译：提供了使用反向电流去除技术从电镀设备中除去非预期的金属沉积物的清洁方法和系统。这样的清洁包括将清洁（脱落）盘定位在类似于经常处理的基底的电镀杯中。清洁盘的前表面包括耐腐蚀的导电材料以形成电连接以沉积在杯的表面上。将盘密封在杯中并浸没在电镀液中。然后将反向电流施加到盘的前导电表面以开始沉积物的脱落。杯子内的密封压缩可能在清洁过程中发生变化，导致唇形密封件发生不同的变形，并形成与沉积物的新的电气连接。所提出的清洁可以用于去除在电镀期间形成的沉积物，特别是广泛用于半导体和晶片级封装的锡 - 银合金。

80. 发明授权

US08450210B1 Sequential station tool for wet processing of semiconductor wafers 有权
标题翻译：用于半导体晶圆湿法处理的顺序工具
公开(公告)号：US08450210B1
公开(公告)日：2013-05-28
申请号：US13218283
申请日：2011-08-25
申请人： Evan E. Patton , Theodore Cacouris , Eliot Broadbent , Steven T. Mayer
发明人： Evan E. Patton , Theodore Cacouris , Eliot Broadbent , Steven T. Mayer
IPC分类号： H01L21/445 , C25D17/28
CPC分类号： C25D17/001 , C25D3/38 , C25D5/10 , H01L21/2885 , H01L21/67161 , H01L21/6719 , H01L21/6723 , H01L21/67751 , H01L21/76877 , Y10T29/41
摘要： Methods and apparatus are provided for processing semiconductor wafers sequentially. Sequential processes employ multi-station processing modules, where particular encompassing wafer processes are divided into sub-processes, each optimized for increasing wafer to wafer uniformity, result quality, and overall wafer throughput. In one example, a copper electroplating module includes separate stations for wetting, initiation, seed layer repair, fill, overburden, reclaim, and rinse.
摘要翻译：提供了顺序处理半导体晶片的方法和装置。顺序过程采用多工位处理模块，其中特别包含的晶片工艺被分为子工艺，每个子工艺被优化用于增加晶圆到晶片的均匀性，结果质量和整个晶片生产量。在一个示例中，铜电镀模块包括用于润湿，起始，种子层修复，填充，覆盖层，回收和冲洗的分离站。

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