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    • 71. 发明授权
    • Focus masking structures, focus patterns and measurements thereof
    • 聚焦掩模结构,聚焦图案及其测量
    • US07175945B2
    • 2007-02-13
    • US11084556
    • 2005-03-16
    • Walter Dean MieherDaniel WackAdy Levy
    • Walter Dean MieherDaniel WackAdy Levy
    • G03F9/00G03C5/00G01B11/00
    • G03F7/70641G03F1/28G03F1/44G06K7/0095
    • Methods and device structures used to determine the focus quality of a photolithographic pattern or a photolithographic system are disclosed. One aspect of the invention relates to focus masking structures configured to form focus patterns that contain focus information relating to the focus quality. The focus masking structures generally include a plurality of parallel source lines that are separated by alternating phase shift zones. Another aspect of the invention relates to focus patterns that change with changes in focus. The focus patterns generally include a plurality of periodic structures that form measurable shifts therebetween corresponding to the sign and magnitude of defocus. Another aspect of the invention relates to a method of determining the focus quality of a photolithographic pattern or a photolithographic system. The method generally includes: providing a focus masking structure, forming a focus pattern on a work piece with the focus masking structure, and obtaining focus information from the focus pattern. The focus information may be obtained using a variety of techniques, as for example, scatterometry techniques, scanning techniques, imaging techniques, phase based techniques, and the like.
    • 公开了用于确定光刻图案或光刻系统的焦点质量的方法和装置结构。 本发明的一个方面涉及被配置为形成聚焦图案的聚焦掩模结构,其包含与焦点质量相关的焦点信息。 聚焦掩模结构通常包括由交替的相移区域分开的多个平行的源极线。 本发明的另一方面涉及随焦点变化而变化的聚焦图案。 聚焦图案通常包括多个周期性结构,其在散焦的符号和大小之间形成可测量的偏移。 本发明的另一方面涉及一种确定光刻图案或光刻系统的焦点质量的方法。 该方法通常包括:提供聚焦掩蔽结构,在聚焦掩模结构的工件上形成聚焦图案,以及从焦点图案获得聚焦信息。 可以使用各种技术获得焦点信息,例如散射测量技术,扫描技术,成像技术,基于相位的技术等。
    • 72. 发明申请
    • Method for determining and correcting reticle variations
    • 确定和校正标线差异的方法
    • US20060234145A1
    • 2006-10-19
    • US11394177
    • 2006-03-29
    • Sterling WatsonAdy LevyChris MackStanley StokowskiZain Saidin
    • Sterling WatsonAdy LevyChris MackStanley StokowskiZain Saidin
    • G03F1/00G03C5/00G06K9/00
    • G03F1/84Y10S430/146
    • Disclosed are techniques for determining and correcting reticle variations using a reticle global variation map generated by comparing a set of measured reticle parameters to a set of reference reticle parameters. The measured reticle parameters are obtained by reticle inspection, and the variation map identifies reticle regions and associated levels of correction. In one embodiment, the variation data is communicated to a system which modifies the reticle by embedding scattering centers within the reticle at identified reticle regions, thereby improving the variations. In another embodiment the variation data is transferred to a wafer stepper or scanner which in turn modifies the conditions under which the reticle is used to manufacture wafers, thereby compensating for the variations and producing wafers that are according to design.
    • 公开了用于使用通过将测量的标线参数的集合与一组参考掩模版参数进行比较而生成的光罩全局变化图来确定和校正光罩变化的技术。 通过掩模版检查获得测量的掩模版参数,并且变化图识别标线区域和相关联的校正水平。 在一个实施例中,将变化数据传送到通过在标定的标线区域内的散射中心嵌入来修改掩模版的系统,从而改善变化。 在另一个实施例中,变化数据被传送到晶片步进器或扫描器,该晶片步进器或扫描器又改变了使用掩模版制造晶片的条件,从而补偿了根据设计的变化和生产晶片。
    • 73. 发明授权
    • Overlay alignment measurement mark
    • 覆盖对齐测量标记
    • US06486954B1
    • 2002-11-26
    • US09654318
    • 2000-09-01
    • Walter Dean MieherAdy Levy
    • Walter Dean MieherAdy Levy
    • G01B1127
    • G03F7/70633G01B11/002
    • An alignment mark comprising a first test zone and a second test zone for measuring the relative position between different layers of a semiconductor device. The alignment mark is used to determine the overlay error between layers of a semiconductor wafer while minimizing measurement inaccuracies caused by semiconductor manufacturing processes. The first test zone includes two sections, one in which test structures are formed on one layer and a second in which test structures are formed on a second layer. Each of these test structures is composed of smaller sub-structures. The second test zone includes two similar sections that are also composed of smaller sub-structures. The first and second test zones are configured so that the section of each test zone formed one layer is adjacent to the section of the other test zone that is formed on the other layer. By forming each of the periodic structures with smaller sized sub-structures, a more accurate measurement of any alignment error may be obtained. Another aspect of the present invention pertains to a method of utilizing the alignment mark so that an overlay measurement may be obtained.
    • 对准标记包括第一测试区和第二测试区,用于测量半导体器件的不同层之间的相对位置。 对准标记用于确定半导体晶片的层之间的重叠误差,同时最小化由半导体制造工艺引起的测量不准确。 第一测试区包括两个部分,一个测试结构形成在一个层上,另一个测试结构形成在第二层上。 这些测试结构中的每一个都由较小的子结构组成。 第二测试区域包括两个类似的部分,它们也由较小的子结构组成。 第一和第二测试区被配置成使得形成一层的每个测试区的部分与形成在另一层上的另一测试区的部分相邻。 通过用较小尺寸的子结构形成每个周期性结构,可以获得任何对准误差的更准确的测量。 本发明的另一方面涉及一种利用对准标记以便可以获得覆盖测量的方法。
    • 79. 发明授权
    • Solar metrology methods and apparatus
    • 太阳能计量方法和装置
    • US08604447B2
    • 2013-12-10
    • US13557047
    • 2012-07-24
    • Scott YoungGuoheng ZhaoAdy LevyMarco GuevremontNeeraj Khanna
    • Scott YoungGuoheng ZhaoAdy LevyMarco GuevremontNeeraj Khanna
    • G01N21/64
    • G01N21/6489G01N21/9501H02S50/10
    • Methods and apparatus are presented to measure the photoluminescence of incoming wafers and extract parameters such as minority carrier life time, diffusion length, and defect density that may be used to predict final solar cell efficiency. In some examples, illumination light is supplied to a side of an as-cut silicon wafer and the induced luminescence measured from the same side and the opposite side of the wafer is used to determine an indication of the minority carrier lifetime. In another example, the luminescence induced by two instances of illumination light of different wavelength is used to determine an indication of the minority carrier lifetime. In another example, the spatial distribution of luminescence intensity over an area surrounding a focused illumination spot is used to determine an indication of the minority carrier lifetime. Other apparatus useful to passivate the surface of a wafer for inspection are also presented.
    • 提出了测量进入晶片的光致发光的方法和装置,并提取可用于预测最终太阳能电池效率的参数,例如少数载流子寿命,扩散长度和缺陷密度。 在一些示例中,将照明光提供给切割硅晶片的一侧,并且使用从晶片的相同侧和相对侧测量的感应发光来确定少数载流子寿命的指示。 在另一示例中,由两个不同波长的照明光实例引起的发光用于确定少数载流子寿命的指示。 在另一示例中,使用聚焦照明点周围的区域上的发光强度的空间分布来确定少数载流子寿命的指示。 还提出了可用于钝化晶片表面以进行检查的其它装置。