专利快速检索-快速检索全球专利，免费商用专利数据库-IPRDB

1. 发明授权

US07175945B2 Focus masking structures, focus patterns and measurements thereof 有权
标题翻译：聚焦掩模结构，聚焦图案及其测量
公开(公告)号：US07175945B2
公开(公告)日：2007-02-13
申请号：US11084556
申请日：2005-03-16
申请人： Walter Dean Mieher , Daniel Wack , Ady Levy
发明人： Walter Dean Mieher , Daniel Wack , Ady Levy
IPC分类号： G03F9/00 , G03C5/00 , G01B11/00
CPC分类号： G03F7/70641 , G03F1/28 , G03F1/44 , G06K7/0095
摘要： Methods and device structures used to determine the focus quality of a photolithographic pattern or a photolithographic system are disclosed. One aspect of the invention relates to focus masking structures configured to form focus patterns that contain focus information relating to the focus quality. The focus masking structures generally include a plurality of parallel source lines that are separated by alternating phase shift zones. Another aspect of the invention relates to focus patterns that change with changes in focus. The focus patterns generally include a plurality of periodic structures that form measurable shifts therebetween corresponding to the sign and magnitude of defocus. Another aspect of the invention relates to a method of determining the focus quality of a photolithographic pattern or a photolithographic system. The method generally includes: providing a focus masking structure, forming a focus pattern on a work piece with the focus masking structure, and obtaining focus information from the focus pattern. The focus information may be obtained using a variety of techniques, as for example, scatterometry techniques, scanning techniques, imaging techniques, phase based techniques, and the like.
摘要翻译：公开了用于确定光刻图案或光刻系统的焦点质量的方法和装置结构。本发明的一个方面涉及被配置为形成聚焦图案的聚焦掩模结构，其包含与焦点质量相关的焦点信息。聚焦掩模结构通常包括由交替的相移区域分开的多个平行的源极线。本发明的另一方面涉及随焦点变化而变化的聚焦图案。聚焦图案通常包括多个周期性结构，其在散焦的符号和大小之间形成可测量的偏移。本发明的另一方面涉及一种确定光刻图案或光刻系统的焦点质量的方法。该方法通常包括：提供聚焦掩蔽结构，在聚焦掩模结构的工件上形成聚焦图案，以及从焦点图案获得聚焦信息。可以使用各种技术获得焦点信息，例如散射测量技术，扫描技术，成像技术，基于相位的技术等。

2. 发明授权

US06884552B2 Focus masking structures, focus patterns and measurements thereof 有权
标题翻译：聚焦掩模结构，聚焦图案及其测量
公开(公告)号：US06884552B2
公开(公告)日：2005-04-26
申请号：US10291181
申请日：2002-11-07
申请人： Walter Dean Mieher , Daniel Wack , Ady Levy
发明人： Walter Dean Mieher , Daniel Wack , Ady Levy
IPC分类号： G02B7/28 , G03F1/28 , G03F7/20 , G03F7/207 , H01L21/027 , G03F9/00 , G01B11/00 , G03C5/00
CPC分类号： G03F7/70641 , G03F1/28 , G03F1/44 , G06K7/0095
摘要： Methods and device structures used to determine the focus quality of a photolithographic pattern or a photolithographic system are disclosed. One aspect of the invention relates to focus masking structures configured to form focus patterns that contain focus information relating to the focus quality. The focus masking structures generally include a plurality of parallel source lines that are separated by alternating phase shift zones. Another aspect of the invention relates to focus patterns that change with changes in focus. The focus patterns generally include a plurality of periodic structures that form measurable shifts therebetween corresponding to the sign and magnitude of defocus. Another aspect of the invention relates to a method of determining the focus quality of a photolithographic pattern or a photolithographic system. The method generally includes: providing a focus masking structure, forming a focus pattern on a work piece with the focus masking structure, and obtaining focus information from the focus pattern. The focus information may be obtained using a variety of techniques, as for example, scatterometry techniques, scanning techniques, imaging techniques, phase based techniques, and the like.
摘要翻译：公开了用于确定光刻图案或光刻系统的焦点质量的方法和装置结构。本发明的一个方面涉及被配置为形成聚焦图案的聚焦掩模结构，其包含与焦点质量相关的焦点信息。聚焦掩模结构通常包括由交替的相移区域分开的多个平行的源极线。本发明的另一方面涉及随焦点变化而变化的聚焦图案。聚焦图案通常包括多个周期性结构，其在散焦的符号和大小之间形成可测量的偏移。本发明的另一方面涉及一种确定光刻图案或光刻系统的焦点质量的方法。该方法通常包括：提供聚焦掩蔽结构，在聚焦掩模结构的工件上形成聚焦图案，以及从焦点图案获得聚焦信息。可以使用各种技术获得焦点信息，例如散射测量技术，扫描技术，成像技术，基于相位的技术等。

3. 发明申请

US20070108368A1 Focus masking structures, focus patterns and measurements thereof 审中-公开
公开(公告)号：US20070108368A1
公开(公告)日：2007-05-17
申请号：US11647793
申请日：2006-12-28
申请人： Walter Mieher , Daniel Wack , Ady Levy
发明人： Walter Mieher , Daniel Wack , Ady Levy
IPC分类号： G02B27/40
CPC分类号： B22D11/10 , B22D11/064 , B22D39/003 , F27D3/14 , F27D19/00 , H02K44/00 , H02K44/04
摘要： Methods and device structures used to determine the focus quality of a photolithographic pattern or a photolithographic system are disclosed. One aspect of the invention relates to focus masking structures configured to form focus patterns that contain focus information relating to the focus quality. The focus masking structures generally include a plurality of parallel source lines that are separated by alternating phase shift zones. Another aspect of the invention relates to focus patterns that change with changes in focus. The focus patterns generally include a plurality of periodic structures that form measurable shifts therebetween corresponding to the sign and magnitude of defocus. Another aspect of the invention relates to a method of determining the focus quality of a photolithographic pattern or a photolithographic system. The method generally includes: providing a focus masking structure, forming a focus pattern on a work piece with the focus masking structure, and obtaining focus information from the focus pattern. The focus information may be obtained using a variety of techniques, as for example, scatterometry techniques, scanning techniques, imaging techniques, phase based techniques, and the like.

4. 发明申请

US20050208391A1 Focus masking structures, focus patterns and measurements thereof 有权
公开(公告)号：US20050208391A1
公开(公告)日：2005-09-22
申请号：US11084556
申请日：2005-03-16
申请人： Walter Mieher , Daniel Wack , Ady Levy
发明人： Walter Mieher , Daniel Wack , Ady Levy
IPC分类号： G02B7/28 , G03F1/28 , G03F7/20 , G03F7/207 , H01L21/027 , G03F9/00 , G03C5/00
CPC分类号： G03F7/70641 , G03F1/28 , G03F1/44 , G06K7/0095
摘要： Methods and device structures used to determine the focus quality of a photolithographic pattern or a photolithographic system are disclosed. One aspect of the invention relates to focus masking structures configured to form focus patterns that contain focus information relating to the focus quality. The focus masking structures generally include a plurality of parallel source lines that are separated by alternating phase shift zones. Another aspect of the invention relates to focus patterns that change with changes in focus. The focus patterns generally include a plurality of periodic structures that form measurable shifts therebetween corresponding to the sign and magnitude of defocus. Another aspect of the invention relates to a method of determining the focus quality of a photolithographic pattern or a photolithographic system. The method generally includes: providing a focus masking structure, forming a focus pattern on a work piece with the focus masking structure, and obtaining focus information from the focus pattern. The focus information may be obtained using a variety of techniques, as for example, scatterometry techniques, scanning techniques, imaging techniques, phase based techniques, and the like.

5. 发明申请

US20080037005A1 System for measuring a sample with a layer containing a periodic diffracting structure 有权
$System for measuring a sample with a layer containing a periodic diffracting structure$
标题翻译：用含有周期性衍射结构的层测量样品的系统
公开(公告)号：US20080037005A1
公开(公告)日：2008-02-14
申请号：US11329500
申请日：2006-01-10
申请人： Noah Bareket , Daniel Wack , Guoheng Zhao
发明人： Noah Bareket , Daniel Wack , Guoheng Zhao
IPC分类号： G01N21/00 , G01J3/28
CPC分类号： G01N21/211 , G01N21/8422 , G01N2021/213
摘要： To measure the critical dimensions and other parameters of a one- or two-dimensional diffracting structure of a film, the calculation may be simplified by first performing a measurement of the thickness of the film, employing a film model that does not vary the critical dimension or parameters related to other characteristics of the structure. The thickness of the film may be estimated using the film model sufficiently accurately so that such estimate may be employed to simplify the structure model for deriving the critical dimension and other parameters related to the two-dimensional diffracting structure.
摘要翻译：为了测量膜的一维或二维衍射结构的临界尺寸和其它参数，可以通过首先进行薄膜厚度的测量来简化计算，使用不改变临界尺寸的膜模型或与结构的其他特征相关的参数。可以使用膜模型来充分准确地估计膜的厚度，使得可以采用这种估计来简化用于导出临界尺寸和与二维衍射结构相关的其它参数的结构模型。

6. 发明授权

US07480047B1 Time-domain computation of scattering spectra for use in spectroscopic metrology 有权
标题翻译：用于光谱计量学的散射光谱的时域计算
公开(公告)号：US07480047B1
公开(公告)日：2009-01-20
申请号：US11320191
申请日：2005-12-28
申请人： Edward Ratner , Andrei Veldman , Daniel Wack
发明人： Edward Ratner , Andrei Veldman , Daniel Wack
IPC分类号： G01J3/28 , G01J4/00
CPC分类号： G01J3/4412 , G01N21/9501 , G01N2021/213
摘要： In an embodiment, a method of time-domain simulation for simulating scattering spectra is described. The method may provide for computing spatial derivatives including computing spectral derivatives in some portion of the domain and finite difference derivatives in some other portion of the domain; forming an equation for non-reflecting boundary conditions; and computing a time-stepping scheme using a high-order unconditionally stable computation method.
摘要翻译：在一个实施例中，描述了用于模拟散射光谱的时域仿真的方法。该方法可以提供用于计算空间导数，包括在域的一些部分中计算光谱导数和在该域的一些其他部分中的有限差分导数; 形成非反射边界条件的方程; 以及使用高阶无条件稳定计算方法计算时间步长方案。

7. 发明授权

US09625810B2 Source multiplexing illumination for mask inspection 有权
公开(公告)号：US09625810B2
公开(公告)日：2017-04-18
申请号：US13419157
申请日：2012-03-13
申请人： Daimian Wang , Daniel Wack , Damon F. Kvamme , Tao-Yi Fu
发明人： Daimian Wang , Daniel Wack , Damon F. Kvamme , Tao-Yi Fu
IPC分类号： G02B5/08 , G02B7/182 , G03F1/84
CPC分类号： G03F1/84
摘要： Methods and systems for source multiplexing illumination for mask inspection are disclosed. Such illumination systems enable EUV sources of small brightness to be used for EUV mask defect inspection at nodes below the 22 nm. Utilizing the multiple plane or conic mirrors that are either attached to a continuously rotating base with different angles or individually rotating to position for each pulse, the reflected beams may be directed through a common optical path. The light may then be focused by a condenser to an EUV mask. The reflected and scattered light from the mask may then be imaged by some imaging optics onto some sensors. The mask image may be subsequently processed for defect information.

8. 发明申请

US20140036333A1 MULTIPLEXING EUV SOURCES IN RETICLE INSPECTION 有权
标题翻译：反复检查中的多重EUV来源
公开(公告)号：US20140036333A1
公开(公告)日：2014-02-06
申请号：US13563850
申请日：2012-08-01
申请人： Daniel Wack , Daimian Wang , Karl R. Umstadter , Ed Ma , Frank Chilese
发明人： Daniel Wack , Daimian Wang , Karl R. Umstadter , Ed Ma , Frank Chilese
IPC分类号： G02B26/08
CPC分类号： G02B26/123 , G01N21/8806 , G01N2021/95676 , G01N2201/105 , G03F1/24 , G03F1/84 , G03F7/7005
摘要： The present disclosure is directed to an illumination system. The illumination system may include a base member rotatable about a rotation axis and a plurality of mirrors disposed on an outer surface of the base member along a perimeter of the base member. The mirrors may be oriented at a predetermined angle. The illumination system also includes at least two illumination sources. Each of the mirrors of the first plurality of mirrors is configured to receive radiation from the first illumination source at a first portion of each mirror at a first time. The mirror is configured to reflect the radiation to an optical path. Each of the mirrors is further configured to receive radiation from the second illumination source at a second portion of the mirror at a second time. The mirrors reflect the radiation from the second illumination source to the common optical path.
摘要翻译：本公开涉及一种照明系统。照明系统可以包括可围绕旋转轴线旋转的基座构件和沿着基座构件的周边设置在基座构件的外表面上的多个反射镜。反射镜可以以预定角度定向。照明系统还包括至少两个照明源。第一多个反射镜的每个反射镜被配置为在第一时间在每个反射镜的第一部分处接收来自第一照明源的辐射。镜被配置为将辐射反射到光路。每个反射镜被进一步配置成在第二时间在反射镜的第二部分处接收来自第二照明光源的辐射。反射镜将从第二照明源的辐射反射到公共光路。

9. 发明申请

US20080084567A1 System for Scatterometric Measurements and Applications 有权
标题翻译：散射测量和应用系统
公开(公告)号：US20080084567A1
公开(公告)日：2008-04-10
申请号：US11945949
申请日：2007-11-27
申请人： Anatoly Fabrikant , Guoheng Zhao , Daniel Wack , Mehrdad Nikoonahad
发明人： Anatoly Fabrikant , Guoheng Zhao , Daniel Wack , Mehrdad Nikoonahad
IPC分类号： G01B9/02 , G01B11/24 , G01J4/00
CPC分类号： G01N21/45 , G01N21/21 , G01N21/4788 , G01N21/9501 , G01N2021/213 , G01N2021/217 , G01N2021/8416 , G02B5/18
摘要： Instead of constructing a full multi-dimensional look-up-table as a model to find the critical dimension or other parameters in scatterometry, regression or other optimized estimation methods are employed starting from a “best guess” value of the parameter. Eigenvalues of models that are precalculated may be stored and reused later for other structures having certain common characteristics to save time. The scatterometric data that is used to find the value of the one or more parameter can be limited to those at wavelengths that are less sensitive to the underlying film characteristics. A model for a three-dimensional grating may be constructed by slicing a representative structure into a stack of slabs and creating an array of rectangular blocks to approximate each slab. One dimensional boundary problems may be solved for each block which are then matched to find a two-dimensional solution for the slab. A three-dimensional solution can then be constructed from the two-dimensional solutions for the slabs to yield the diffraction efficiencies of the three-dimensional grating. This model can then be used for finding the one or more parameters of the diffracting structure in scatterometry. Line roughness of a surface can be measured by directing a polarized incident beam in an incident plane normal to the line grating and measuring the cross-polarization coefficient. The value of the one or more parameters may then be supplied to a stepper or etcher to adjust a lithographic or etching process.
摘要翻译：不需要构建一个完整的多维查找表作为模型来查找散点图中的关键维度或其他参数，而是从参数的“最佳猜测”值开始采用回归或其他优化的估计方法。预先计算的模型的特征值可以稍后存储并重用于具有某些共同特征的其他结构以节省时间。用于查找一个或多个参数的值的散点数据可以限于那些对底层薄膜特性较不敏感的波长数据。三维光栅的模型可以通过将代表性结构切片成一叠平板并且产生矩形块阵列来近似每个平板来构造。可以为每个块解决一维边界问题，然后将其匹配以找到板的二维解。然后可以从板的二维解决方案中构建三维解，以产生三维光栅的衍射效率。然后，该模型可用于在散射测量中找到衍射结构的一个或多个参数。可以通过将垂直于线光栅的入射平面中的偏振入射光束引导并测量交叉极化系数来测量表面的线粗糙度。然后可以将一个或多个参数的值提供给步进器或蚀刻器以调整光刻或蚀刻工艺。

10. 发明授权

US09335637B2 Laser-produced plasma EUV source with reduced debris generation utilizing predetermined non-thermal laser ablation 有权
标题翻译：激光产生的等离子体EUV源，利用预定的非热激光消融减少碎片产生
公开(公告)号：US09335637B2
公开(公告)日：2016-05-10
申请号：US13227586
申请日：2011-09-08
申请人： Gildardo Delgado , Daniel Wack
发明人： Gildardo Delgado , Daniel Wack
IPC分类号： G03F7/20 , H05G2/00
CPC分类号： G03F7/70033 , H05G2/005 , H05G2/008
摘要： A method and apparatus for generating extreme ultraviolet (EUV) light is disclosed. The method may comprise non-thermally ablating a target material utilizing a first laser beam. The first laser beam may be configured for ejecting a portion of the target material in a non-thermal manner to create a plume. The method may further comprise irradiating the plume utilizing a second laser beam to produce a high-temperature plasma for EUV radiation.
摘要翻译：公开了一种用于产生极紫外（EUV）光的方法和装置。该方法可以包括利用第一激光束非热烧蚀靶材料。第一激光束可以被配置为以非热方式喷射目标材料的一部分以产生羽流。该方法可以进一步包括利用第二激光束照射羽流以产生用于EUV辐射的高温等离子体。

你已经成功收藏专利！

检索式保存成功!

IPRDB

热门服务

关于我们

友情链接

联系方式