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71. 发明授权

US09432800B1 Wireless near field communication system 有权
标题翻译：无线近场通信系统
公开(公告)号：US09432800B1
公开(公告)日：2016-08-30
申请号：US14680069
申请日：2015-04-07
申请人： Ge Yi , Jinwen Wang , Dujiang Wan , Shaoping Li
发明人： Ge Yi , Jinwen Wang , Dujiang Wan , Shaoping Li
IPC分类号： H04B5/00 , H04W4/00
CPC分类号： H04W4/008 , H04W4/80
摘要： A wireless magnetic field communication system working within the range of less than 1.5 m without induction induced interference during listening mode is proposed. The system comprises at least a transmitter and a receiver. Several novel transmitter designs using either active-connection-control solenoid or spin-orbit torque (SOT) based patterned thin film element(s) are proposed. The system has intrinsic high data security level due to its limited working range, as well as large data transfer rate. The system is suitable to establish a temporary off-the grid magnetic field communication network. It also provides a new data communication approach among modules instead of data cable in industry equipment. The system can be used as a standalone or built-in system for communication between devices or modularized components of a system.
摘要翻译：提出了一种在小于1.5米的范围内工作的无线磁场通信系统，在听觉模式下没有感应干扰。该系统至少包括发射机和接收机。提出了使用有源连接控制螺线管或基于旋转轨道转矩（SOT）的图案化薄膜元件的几种新颖的发射机设计。该系统由于其工作范围有限，数据传输速率大，因此具有内在的高数据安全级别。该系统适合建立一个临时离网电磁场通信网络。它还在模块之间提供了一种新的数据通信方式，而不是工业设备中的数据电缆。该系统可用作独立或内置系统，用于系统的设备或模块化组件之间的通信。

72. 发明授权

US09293694B2 Magnetoresistive random access memory cell with independently operating read and write components 有权
公开(公告)号：US09293694B2
公开(公告)日：2016-03-22
申请号：US13288860
申请日：2011-11-03
申请人： Ge Yi , Shaoping Li , Dong Li , Yunjun Tang , Zongrong Liu
发明人： Ge Yi , Shaoping Li , Dong Li , Yunjun Tang , Zongrong Liu
IPC分类号： G11C11/00 , H01L43/08 , G11C11/16
CPC分类号： H01L43/08 , G11C11/16 , G11C11/161 , G11C11/1675
摘要： A new class of the memory cell is proposed. There are two separated pulse data writing and sensing current paths. The in-plane pulse current is used to flip the magnetization direction of the perpendicular-anisotropy data storage layer sandwiched between a heavy metal writing current-carrying layer and a dielectric layer. The magnetization state within data storage layer is detected by the patterned perpendicular-anisotropy tunneling magnetoresistive (TMR) stack via the output potential of the stack. Two detailed memory cells are proposed: in one proposed cell, the data storage layer is independent from but kept close to the sensing TMR stack, whose magnetization orientation affects magnetization configuration within the free layer of the TMR stack, therefor ultimately affects the output potential of the stack; in the other proposed cell, the perpendicular-anisotropy data storage layer is the free layer of the sensing TMR stack, whose magnetization state will directly affect the output potential of the stack when sensing current passes through.

73. 发明授权

US09012265B2 Magnet assisted alignment method for wafer bonding and wafer level chip scale packaging 有权
标题翻译：用于晶片接合和晶圆级芯片级封装的磁铁辅助对准方法
公开(公告)号：US09012265B2
公开(公告)日：2015-04-21
申请号：US13429440
申请日：2012-03-26
申请人： Ge Yi , Zongrong Liu , Yunjun Tang , Shaoping Li
发明人： Ge Yi , Zongrong Liu , Yunjun Tang , Shaoping Li
IPC分类号： H01L21/68 , H01L23/00
CPC分类号： H01L24/83 , H01L24/03 , H01L24/05 , H01L24/08 , H01L24/11 , H01L24/13 , H01L24/16 , H01L24/80 , H01L24/81 , H01L24/94 , H01L24/97 , H01L2224/0345 , H01L2224/03452 , H01L2224/03462 , H01L2224/03612 , H01L2224/03614 , H01L2224/0362 , H01L2224/03826 , H01L2224/03827 , H01L2224/0401 , H01L2224/05009 , H01L2224/05073 , H01L2224/05082 , H01L2224/05083 , H01L2224/05084 , H01L2224/05124 , H01L2224/05144 , H01L2224/05147 , H01L2224/05155 , H01L2224/05157 , H01L2224/05547 , H01L2224/05576 , H01L2224/05578 , H01L2224/056 , H01L2224/05624 , H01L2224/05644 , H01L2224/05647 , H01L2224/05655 , H01L2224/05657 , H01L2224/08146 , H01L2224/1145 , H01L2224/11452 , H01L2224/11462 , H01L2224/1162 , H01L2224/13022 , H01L2224/13025 , H01L2224/131 , H01L2224/16146 , H01L2224/80121 , H01L2224/80143 , H01L2224/80169 , H01L2224/80801 , H01L2224/81121 , H01L2224/81143 , H01L2224/81169 , H01L2224/81801 , H01L2224/94 , H01L2224/97 , H01L2924/01322 , H01L2924/1461 , H01L2924/00015 , H01L2924/00014 , H01L2924/014 , H01L2924/01026 , H01L2924/01028 , H01L2924/01078 , H01L2924/01024 , H01L2224/80 , H01L2224/81 , H01L2224/03 , H01L2224/11 , H01L2924/00
摘要： A high-precision alignment method with high throughput is proposed, which can be used for wafer-to-wafer, chip-to-wafer or chip-to-chip bonding. The scheme implements pairing patterned magnets predetermined designed and made using wafer level process on two components (wafer or chip). The magnetization in patterned magnet can be set at predetermined configuration before bonding starts. When, the two components are bought to close proximity after a coarse alignment, the magnetic force will bring the magnet pairs together and aligned the patterned magnet on one component with its mirrored or complimentary patterned magnets on the other component to minimize the overall the magnetic energy of the pairing magnet. A few patterned magnet structures and materials, with their unique merits are proposed as examples for magnet pair for the self-alignment purpose. This method enables solid contact at the bonding interface via patterned magnets under the magnetic force, which avoid the wafer drafting due to the formation of the liquid phases.
摘要翻译：提出了一种高精度的高通量对准方法，可用于晶圆到晶圆，晶片到晶圆或芯片间的接合。该方案实现了使用晶片级处理在两个部件（晶片或芯片）上预先设计和制造的配对图案化磁体。在接合开始之前，图案化磁体中的磁化可以被设定为预定的配置。当两个部件在粗对准之后被购买成靠近时，磁力将使磁体对在一起，并将其上的图案化磁体与其另一部件上的镜像或互补的图案化磁体对准，以最小化整个磁能的配对磁铁。提出了一些具有独特优点的图案化磁体结构和材料作为用于自对准目的的磁体对的示例。该方法能够在磁力下通过图案化的磁体在接合界面处实现牢固的接触，从而避免由于液相的形成引起的晶片牵伸。

74. 发明授权

US08797686B1 Magnetic recording transducer with short effective throat height and method of fabrication 有权
标题翻译：磁记录传感器具有短的喉部高度和制造方法
公开(公告)号：US08797686B1
公开(公告)日：2014-08-05
申请号：US12978242
申请日：2010-12-23
申请人： Zhigang Bai , Peng Luo , Shaoping Li , Ut Tran
发明人： Zhigang Bai , Peng Luo , Shaoping Li , Ut Tran
IPC分类号： G11B5/31 , G11B5/23
CPC分类号： G11B5/3163 , G11B5/1278 , G11B5/232 , G11B5/235 , G11B5/3116 , G11B5/315
摘要： A magnetic recording transducer for use in a data storage device includes a writer pole with a ABS surface, trailing edge bevel and a trailing shield. The effective throat height of the writer main pole is reduced by the use two gap layers between the writer main pole and the trailing shield. A first gap layer is on and in contact with the writer pole trailing surface, and a second gap layer is on a section of the first gap layer on the writer pole trailing edge bevel, from a point removed from the ABS surface and absent from a part on a section of the first gap layer on the writer pole trailing edge bevel nearest the ABS. A method of fabricating the transducer is also provided.
摘要翻译：用于数据存储装置的磁记录传感器包括具有ABS表面的写入极，后缘斜面和后屏蔽。通过使用写主机和后盾之间的两个间隙层，减小了作者主极的有效喉部高度。第一间隙层与写入器极后表面接触并接触，并且第二间隙层位于写入器极后缘斜面上的第一间隙层的一部分上，从从ABS表面移除的点不在部分位于最靠近ABS的作者极后缘的第一间隙层的一部分。还提供了制造换能器的方法。

75. 发明授权

US08599520B1 Method and system for providing a read transducer having an adaptive read sensor track width 有权
标题翻译：用于提供具有自适应读取传感器轨道宽度的读取换能器的方法和系统
公开(公告)号：US08599520B1
公开(公告)日：2013-12-03
申请号：US13332275
申请日：2011-12-20
申请人： Feng Liu , Laurence L. Chen , Yimin Guo , Amritpal S. Rana , Shaoping Li
发明人： Feng Liu , Laurence L. Chen , Yimin Guo , Amritpal S. Rana , Shaoping Li
IPC分类号： G11B5/127 , G11B5/39
CPC分类号： G11B5/398 , G01R33/09 , G01R33/093 , G11B5/3912 , G11B5/3932
摘要： A method and system provide a magnetic read transducer having an air-bearing surface (ABS). The magnetic transducer includes a first shield, a second shield, and a read sensor between the first shield and the second shield. The read sensor extends along a stripe height direction perpendicular to the ABS. A first portion of the read sensor at the ABS has a first width in a track width direction parallel to the ABS. A second portion of the read sensor is recessed from the ABS along the stripe height direction and has a second width in the track width direction. The second width is greater than the first width.
摘要翻译：一种方法和系统提供具有空气轴承表面（ABS）的磁读取换能器。磁换能器包括在第一屏蔽和第二屏蔽之间的第一屏蔽，第二屏蔽和读取传感器。读取传感器沿垂直于ABS的条带高度方向延伸。 ABS处的读取传感器的第一部分具有平行于ABS的轨道宽度方向上的第一宽度。读取传感器的第二部分沿着条带高度方向从ABS凹入，并且在轨道宽度方向上具有第二宽度。第二宽度大于第一宽度。

76. 发明授权

US08451563B1 Method for providing a side shield for a magnetic recording transducer using an air bridge 有权
标题翻译：用于使用空气桥提供用于磁记录换能器的侧屏蔽的方法
公开(公告)号：US08451563B1
公开(公告)日：2013-05-28
申请号：US13331208
申请日：2011-12-20
申请人： Jinqiu Zhang , Feng Liu , Shaoping Li , Ming Sun
发明人： Jinqiu Zhang , Feng Liu , Shaoping Li , Ming Sun
IPC分类号： G11B5/17 , G11B5/127
CPC分类号： G11B5/112 , G11B5/1278 , G11B5/3116 , G11B5/315 , G11B5/3163 , Y10T29/49044
摘要： A method fabricates a side shield for a magnetic transducer having a nonmagnetic layer and an ABS location corresponding to an ABS. The nonmagnetic layer has a pole trench therein. The pole trench has a shape and location corresponding to the pole. A wet etchable layer is deposited. Part of the wet etchable layer resides in the pole trench. A pole is formed. The pole has a bottom and a top wider than the bottom in the pole tip region. Part of the pole in the pole tip region is in the pole trench on at least part of the wet etchable layer. At least parts of the wet etchable layer and the nonmagnetic layer are removed, forming an air bridge. The air bridge is between part of the pole at the ABS location and an underlying layer. Side shield layer(s) that substantially fill the air bridge are deposited.
摘要翻译：一种制造用于具有对应于ABS的非磁性层和ABS位置的磁换能器的侧屏蔽的方法。非磁性层在其中具有极沟槽。极沟具有对应于极的形状和位置。沉积湿蚀刻层。湿蚀刻层的一部分位于极沟槽中。一个极点形成。电极具有底部和顶部宽于电极尖端区域中的底部。极尖区域中的极的一部分在至少部分湿蚀刻层的极沟中。去除湿蚀刻层和非磁性层的至少一部分，形成空气桥。空气桥在ABS位置的极点的一部分和下层之间。基本上填充空气桥的侧面屏蔽层被沉积。

77. 发明授权

US07427514B2 Passivated magneto-resistive bit structure and passivation method therefor 有权
标题翻译：钝化磁阻位结构及其钝化方法
公开(公告)号：US07427514B2
公开(公告)日：2008-09-23
申请号：US10646103
申请日：2003-08-22
申请人： Harry Liu , Lonny Berg , William L. Larson , Shaoping Li , Theodore Zhu , Joel Drewes
发明人： Harry Liu , Lonny Berg , William L. Larson , Shaoping Li , Theodore Zhu , Joel Drewes
IPC分类号： G11C11/00 , H01L41/22 , H01L45/00
CPC分类号： H01L27/222 , B82Y10/00 , G11C11/15 , H01L43/08 , H01L43/12
摘要： A passivated magneto-resistive bit structure is disclosed in which surfaces subjects to oxidation or corrosion are protected. In one embodiment, a bit structure is encapsulated by means of an etch stop barrier material. In another embodiment an etch stop barrier material protects the top of a bit structure and dielectric spacers protect the side walls.
摘要翻译：公开了钝化的磁阻钻头结构，其中受保护的氧化或腐蚀的表面。在一个实施例中，位结构通过蚀刻停止阻挡材料被封装。在另一个实施例中，蚀刻停止阻挡材料保护位结构的顶部并且电介质间隔件保护侧壁。

78. 发明申请

US20080225435A1 Magnetic writer for field assisted magnetic recording 有权
标题翻译：用于现场辅助磁记录的磁性写入器
公开(公告)号：US20080225435A1
公开(公告)日：2008-09-18
申请号：US11724536
申请日：2007-03-15
申请人： Chunhong Hou , Shaoping Li , John M. Wolf , Sining Mao
发明人： Chunhong Hou , Shaoping Li , John M. Wolf , Sining Mao
IPC分类号： G11B5/127
CPC分类号： G11B5/314 , G11B5/02 , G11B5/1278 , G11B2005/0005
摘要： A writer includes a write element having a tip portion for generating a write field and a conductive assembly that delivers a write assist current through the tip portion to generate a write assist field.
摘要翻译：写入器包括具有用于产生写入场的尖端部分的写入元件和通过尖端部分传送写入辅助电流以产生写入辅助字段的导电组件。

79. 发明授权

US08400731B1 Write head with variable side shield gaps 有权
标题翻译：用可变侧屏蔽间隙写头
公开(公告)号：US08400731B1
公开(公告)日：2013-03-19
申请号：US12426264
申请日：2009-04-19
申请人： Shaoping Li , Ge Yi , Feng Liu
发明人： Shaoping Li , Ge Yi , Feng Liu
IPC分类号： G11B5/127
CPC分类号： G11B5/1475 , G11B5/3116 , Y10T29/49021 , Y10T29/49039
摘要： A magnetic recording head comprises a write pole including a throat region with a leading edge, a trailing edge opposite the leading edge, and first and second side edges opposite one another. The magnetic recording head further comprises a first side wall gap layer disposed alongside the first side edge of the throat region, and a second side wall gap layer disposed alongside the second side edge of the throat region. Each of the first and second side wall gap layers has a first width at the leading edge of the throat region smaller than a second width at the trailing edge of the throat region.
摘要翻译：磁记录头包括一个写柱，它包括一个具有前缘的喉部区域，与前缘相对的后缘，以及彼此相对的第一和第二侧边缘。磁记录头还包括沿着喉部区域的第一侧边缘设置的第一侧壁间隙层和沿着喉部区域的第二侧边缘设置的第二侧壁间隙层。第一和第二侧壁间隙层中的每一个在喉部区域的前缘处具有小于在喉部区域的后缘处的第二宽度的第一宽度。

80. 发明授权

US08194366B1 TMR read head structures with differential stripe heights 有权
标题翻译： TMR读取具有差分条纹高度的头结构
公开(公告)号：US08194366B1
公开(公告)日：2012-06-05
申请号：US12579315
申请日：2009-10-14
申请人： Shaoping Li , Yimin Guo , Feng Liu , Wei Zhang , Sining Mao
发明人： Shaoping Li , Yimin Guo , Feng Liu , Wei Zhang , Sining Mao
IPC分类号： G11B5/33
CPC分类号： G11B5/398 , G01R33/098 , G11B5/3909 , H01L43/08 , H01L43/12
摘要： A tunneling magnetoresistance (TMR) read head and a method of producing the same are disclosed. A free layer having a free layer stripe height is provided, the free layer having a first side and a second side. A tunneling barrier layer is formed adjacent to the first side of the free layer, the tunneling barrier layer having a first side and a second side, the second side of the tunneling barrier layer facing the first side of the free layer. A pinned stack is formed adjacent to the first side of the tunneling barrier layer. The pinned stack comprises at least one magnetic layer having a current path stripe height that is less than the free layer stripe height.
摘要翻译：公开了一种隧道磁阻（TMR）读头及其制造方法。提供具有自由层条纹高度的自由层，自由层具有第一侧和第二侧。隧道势垒层邻近自由层的第一侧形成，隧道势垒层具有第一侧和第二侧，隧道势垒层的第二面面向自由层的第一侧。在隧道势垒层的第一侧附近形成钉扎层。钉扎堆叠包括至少一个具有小于自由层条纹高度的电流路径条纹高度的磁性层。

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