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71. 发明申请

US20070109693A1 Magnetic head with improved CPP sensor using Heusler alloys 有权
标题翻译：磁头与改进的CPP传感器使用Heusler合金
公开(公告)号：US20070109693A1
公开(公告)日：2007-05-17
申请号：US11281054
申请日：2005-11-16
申请人： Matthew Carey , Jeffrey Childress , Stefan Maat
发明人： Matthew Carey , Jeffrey Childress , Stefan Maat
IPC分类号： G11B5/127 , G11B5/33
CPC分类号： G01R33/093 , B82Y10/00 , B82Y25/00 , G11B5/3929 , G11B2005/3996 , H01F10/1936 , H01F10/3263 , H01L43/10
摘要： A magnetic head including a CPP GMR read sensor that includes a reference layer, a free magnetic layer and a spacer layer that is disposed between them, where the free magnetic layer and the reference magnetic layer are each comprised of Co2MnX where X is a material selected from the group consisting of Ge, Si, Al, Ga and Sn, and where the spacer layer is comprised of a material selected from the group consisting of Ni3Sn, Ni3Sb, Ni2LiGe, Ni2LiSi, Ni2CuSn, Ni2CuSb, Cu2NiSn, Cu2NiSb, Cu2LiGe and Ag2LiSn. Further embodiments include a dual spin valve sensor where the free magnetic layers and the reference layers are each comprised of Heusler alloys. A further illustrative embodiment includes a laminated magnetic layer structure where the magnetic layers are each comprised of a ferromagnetic Heusler alloy, and where the spacer layers are comprised of a nonmagnetic Heusler alloy.
摘要翻译：包括CPP GMR读取传感器的磁头包括参考层，自由磁性层和设置在它们之间的间隔层，其中自由磁性层和参考磁性层各自包含Co 2， SUB> MnX，其中X是选自Ge，Si，Al，Ga和Sn的材料，并且其中间隔层由选自Ni 3 Sn的材料构成，Ni 3 Sb，Ni 2 LiGe，Ni 2 LiSi，Ni 2 CuSn，Ni 2 CuSb，Cu 2 NiSn，Cu 2 NiSb，Cu 2 LiGe和Ag 2 LiSn。另外的实施例包括双自旋阀传感器，其中自由磁性层和参考层各自由Heusler合金构成。另外的说明性实施例包括层叠磁性层结构，其中磁性层各自包含铁磁Heusler合金，并且其中间隔层由非磁性Heusler合金构成。

72. 发明申请

US20060289984A1 Lead contact structure for EMR elements 失效
公开(公告)号：US20060289984A1
公开(公告)日：2006-12-28
申请号：US11168070
申请日：2005-06-27
申请人： Robert Fontana , Stefan Maat
发明人： Robert Fontana , Stefan Maat
IPC分类号： H01L23/52
CPC分类号： H01L43/08 , G11C11/14 , H01L43/12
摘要： EMR elements and methods of fabricating the EMR elements are disclosed. The EMR structure includes one or more layers that form an active region, such as a two-dimensional electron gas (2DEG). The EMR structure has a first side surface, having a plurality of lead protrusions that extend outwardly from the main body of the EMR structure, and an opposing second side surface. The lead protrusions are used to form the current and voltage leads for the EMR element. The active region extends through each lead protrusion and is accessible along a perimeter of each of the lead protrusions. Conductive material is formed along the perimeter of each lead protrusion and contacts the active region of the EMR structure along the perimeter. The lead protrusion and the corresponding conductive material contacting the active region of each lead protrusion form leads for the EMR element, such as current leads and voltage leads.

73. 发明授权

US06992866B2 Exchange-coupled magnetoresistive sensor with a coercive ferrite layer and an oxide underlayer having a spinal lattice structure 失效
标题翻译：具有矫顽铁氧体层和具有脊椎晶格结构的氧化物底层的交换耦合磁阻传感器
公开(公告)号：US06992866B2
公开(公告)日：2006-01-31
申请号：US10931315
申请日：2004-08-31
申请人： Matthew Joseph Carey , Eric Edward Fullerton , Bruce Alvin Gurney , Thai Le , Stefan Maat , Philip Milton Rice
发明人： Matthew Joseph Carey , Eric Edward Fullerton , Bruce Alvin Gurney , Thai Le , Stefan Maat , Philip Milton Rice
IPC分类号： G11B5/39
CPC分类号： B82Y25/00 , B82Y10/00 , G01R33/093 , G11B5/012 , G11B5/3903 , G11B5/3967 , H01F10/3277
摘要： An exchange-coupled magnetic structure includes a ferromagnetic layer, a coercive ferrite layer, such as cobalt-ferrite, for biasing the magnetization of the ferromagnetic layer, and an oxide underlayer, such as cobalt-oxide, in proximity to the coercive ferrite layer. The oxide underlayer has a lattice structure of either rock salt or a spinel and exhibits no magnetic moment at room temperature. The underlayer affects the structure of the coercive ferrite layer and therefore its magnetic properties, providing increased coercivity and enhanced thermal stability. As a result, the coercive ferrite layer is thermally stable at much smaller thicknesses than without the underlayer. The exchange-coupled structure is used in spin valve and magnetic tunnel junction magnetoresistive sensors in read heads of magnetic disk drive systems. Because the coercive ferrite layer can be made as thin as 1 nm while remaining thermally stable, the sensor satisfies the narrow gap requirements of high recording density systems.
摘要翻译：交换耦合磁性结构包括强磁性层，用于偏置铁磁性层的磁化的钴铁氧体的矫顽铁氧体层以及邻近矫顽铁氧体层的氧化钴底层，例如氧化钴。氧化物底层具有岩盐或尖晶石的晶格结构，并且在室温下不显示磁矩。底层影响矫顽铁氧体层的结构，因此影响其磁特性，提供增强的矫顽力和增强的热稳定性。结果，矫顽铁氧体层的热稳定性比没有底层要小得多的厚度。交换耦合结构用于磁盘驱动系统读磁头中的自旋阀和磁隧道结磁阻传感器。由于矫顽铁氧体层可以制成1nm的薄而保持热稳定性，所以传感器满足高记录密度系统的窄间隙要求。

74. 发明授权

US06977801B2 Magnetoresistive device with exchange-coupled structure having half-metallic ferromagnetic Heusler alloy in the pinned layer 失效
标题翻译：具有交换耦合结构的磁阻器件在被钉扎层中具有半金属铁磁Heusler合金
公开(公告)号：US06977801B2
公开(公告)日：2005-12-20
申请号：US10374819
申请日：2003-02-24
申请人： Matthew J. Carey , Jeffrey R. Childress , Stefan Maat
发明人： Matthew J. Carey , Jeffrey R. Childress , Stefan Maat
IPC分类号： G01R33/09 , G11B5/00 , G11B5/012 , G11B5/39 , G11B5/455 , G11B5/66 , H01L21/8246 , H01L27/105 , H01L43/08 , H01L43/10
CPC分类号： H01L43/10 , B82Y10/00 , B82Y25/00 , G01R33/093 , G11B5/012 , G11B5/3903 , G11B5/455 , G11B5/66 , G11B2005/001
摘要： A magnetoresistive device of the type with a pinned ferromagnetic layer and a free ferromagnetic layer separated by a nonmagnetic spacer layer has an exchange-coupled antiferromagnetic/ferromagnetic structure that uses a half-metallic ferromagnetic Heusler alloy with its near 100% spin polarization as the pinned ferromagnetic layer. The exchange-coupled structure includes an intermediate ferromagnetic layer between the AF layer and the pinned half-metallic ferromagnetic Heusler alloy layer, which results in exchange biasing. Magnetoresistive devices that can incorporate the exchange-coupled structure include current-in-the-plane (CIP) read heads and current-perpendicular-to-the-plane (CPP) magnetic tunnel junctions and read heads. The exchange-coupled structure may be located either below or above the nonmagnetic spacer layer in the magnetoresistive device.
摘要翻译：具有钉扎铁磁层和由非磁性间隔层隔开的自由铁磁层的类型的磁阻器件具有交换耦合反铁磁/铁磁结构，其使用具有近100％自旋极化的半金属铁磁Heusler合金作为固定铁磁层。交换耦合结构包括在AF层和被钉扎的半金属铁磁Heusler合金层之间的中间铁磁层，这导致交换偏置。可并入交换耦合结构的磁阻器件包括电流平面（CIP）读头和电流垂直于平面（CPP）磁隧道结和读头。交换耦合结构可以位于磁阻器件中的非磁性间隔层的下方或上方。

75. 发明申请

US20050207073A1 Current-perpendicular-to-plane magnetoresistive sensor with free layer stabilized by in-stact orthogonal magnetic coupling to an antiparallel pinned biasing layer 有权
标题翻译：具有自由层的电流 - 垂直于平面的磁阻传感器通过与反平行的钉扎偏置层的非正交正交磁耦合而稳定
公开(公告)号：US20050207073A1
公开(公告)日：2005-09-22
申请号：US10856102
申请日：2004-05-27
申请人： Matthew Carey , Jeffrey Childress , Kuok Ho , Stefan Maat
发明人： Matthew Carey , Jeffrey Childress , Kuok Ho , Stefan Maat
IPC分类号： G01R33/09 , G11B5/127 , G11B5/33 , G11B5/39 , H01F10/30 , H01F10/32
CPC分类号： B82Y25/00 , B82Y10/00 , G11B5/3903 , H01F10/30 , H01F10/3268 , H01F10/3295
摘要： A magnetically-coupled structure has two ferromagnetic layers with their in-plane magnetization directions coupled orthogonally across an electrically-conducting spacer layer that induces the direct orthogonal magnetic coupling. The structure has application for in-stack biasing in a current-perpendicular-to-the-plane (CPP) magnetoresistive sensor. One of the ferromagnetic layers of the structure is an antiparallel-pinned biasing layer and the other ferromagnetic layer is the sensor free layer. The antiparallel-pinned biasing layer has first and second ferromagnetic films separated by an antiferromagnetically-coupling film. An antiferromagnetic layer exchange-couples the first ferromagnetic film of the biasing layer to fix the net moment of the biasing layer parallel to the moment of the sensor pinned layer. This allows a single annealing step to be used to set the magnetization direction of the biasing and pinned layers.
摘要翻译：磁耦合结构具有两个铁磁层，它们的面内磁化方向正交地耦合在导电直接磁耦合的导电间隔层上。该结构具有在电流垂直于平面（CPP）磁阻传感器中的堆叠偏置的应用。结构的铁磁层之一是反平行钉扎的偏置层，另一个铁磁层是传感器自由层。反平行钉扎偏置层具有由反铁磁耦合膜隔开的第一和第二铁磁膜。反铁磁层将偏置层的第一铁磁膜交换耦合，以将偏置层的净矩平行于传感器钉扎层的力矩。这允许使用单个退火步骤来设定偏置和钉扎层的磁化方向。

76. 发明申请

US20050174701A1 Current-perpendicular-to-plane magnetoresistive sensor with free layer stabilized against vortex magnetic domains generated by the sense current 失效
标题翻译：电流垂直于平面的磁阻传感器，具有由感应电流产生的涡流磁畴的自由层
公开(公告)号：US20050174701A1
公开(公告)日：2005-08-11
申请号：US10776484
申请日：2004-02-10
申请人： Prakash Kasiraj , Stefan Maat
发明人： Prakash Kasiraj , Stefan Maat
IPC分类号： G11B5/39 , G01R33/09 , G11B5/127 , G11B5/33 , H01F10/06 , H01F41/14 , H01L43/08 , H01L43/12
CPC分类号： G11B5/39 , G11B5/1278
摘要： A current-perpendicular-to-the-plane (CPP) magnetoresistive sensor has additional layers for stabilizing the free layer against sense-current-generated magnetic fields. A ferromagnetic stabilizing layer is spaced from the free layer by a spacer layer and is exchange coupled with a second antiferromagnetic layer, the first antiferromagnetic layer being the conventional one for pinning the pinned layer in the CPP sensor. The stabilizing layer is in a vortex or other non-longitudinal magnetization pattern that is fixed by exchange coupling with the second antiferromagnetic layer. The stabilizing layer is also ferromagnetically coupled to the free layer across the spacer layer so that in the absence of both a sense current and an external magnetic field, the free and stabilization layers have similarly shaped vortex or other non-longitudinal magnetization patterns. The sense current generates a vortex magnetic field in the free layer opposite to the fixed vortex magnetization pattern in the stabilizing layer and essentially erases the effect of the vortex magnetization pattern in the free layer.
摘要翻译：电流垂直平面（CPP）磁阻传感器具有用于使自由层稳定于感测电流产生的磁场的附加层。铁磁稳定层通过间隔层与自由层间隔开并与第二反铁磁层交换耦合，第一反铁磁层是用于固定CPP传感器中被钉扎层的常规的。稳定层是通过与第二反铁磁层的交换耦合固定的涡流或其它非纵向磁化模式。稳定层还通过间隔层铁磁耦合到自由层，使得在不存在感测电流和外部磁场的情况下，自由和稳定层具有类似形状的涡流或其它非纵向磁化模式。感应电流在自由层中产生与稳定层中的固定涡流磁化模式相反的涡流磁场，并且基本上消除了自由层中的涡流磁化模式的影响。

77. 发明申请

US20050174691A1 Use of iridium coupling layer in AP-tab magnetic head 有权
标题翻译：在AP-tab磁头中使用铱耦合层
公开(公告)号：US20050174691A1
公开(公告)日：2005-08-11
申请号：US10777830
申请日：2004-02-11
申请人： Hardayal Gill , Stefan Maat
发明人： Hardayal Gill , Stefan Maat
IPC分类号： G11B5/39 , G11B5/82
CPC分类号： G11B5/3932 , Y10T428/1143 , Y10T428/1193
摘要： A magnetic head that uses a thick AP coupling layer in an AP-tab structure. The head includes a free layer having an active area and tab regions on opposite sides of the active area. An antiparallel (AP) coupling layer is formed above the free layer. In one embodiment, the AP coupling layer has a thickness of 15 Å or more. In another embodiment, the AP coupling layer is formed of Ir, and preferably has a thickness of 15 Å or more. A bias layer is formed above each of the tab portions of the free layer, magnetic moments of the tab regions of the free layer being pinned antiparallel to the magnetic moments of the bias layers.
摘要翻译：一种磁头，其使用AP接头结构中的厚AP耦合层。头部包括在活动区域的相对侧上具有活动区域和突片区域的自由层。在自由层上方形成反平行（AP）耦合层。在一个实施例中，AP耦合层具有15或更大的厚度。在另一实施例中，AP耦合层由Ir形成，优选地具有15或更大的厚度。在自由层的每个突片部分上形成偏置层，自由层的突片区域的磁矩与反射层的磁矩反平行地固定。

78. 发明授权

US08385025B2 Current-perpendicular-to-the-plane (CPP) magnetoresistive (MR) sensor with improved seed layer structure for hard bias layer 有权
标题翻译：电流垂直于平面（CPP）磁阻（MR）传感器，具有改进的用于硬偏置层的种子层结构
公开(公告)号：US08385025B2
公开(公告)日：2013-02-26
申请号：US12969466
申请日：2010-12-15
申请人： Stefan Maat , Alexander M. Zeltser
发明人： Stefan Maat , Alexander M. Zeltser
IPC分类号： G11B5/39
CPC分类号： G11B5/3909 , B82Y10/00 , B82Y25/00 , G11B2005/3996 , Y10T428/1121
摘要： A current-perpendicular-to-the-plane (CPP) magnetoresistive (MR) sensor has an improved seed layer structure for the ferromagnetic hard (high coercivity) bias layer that is used to longitudinally bias the sensor's free ferromagnetic layer. The seed layer structure is a trilayer consisting of a first seed layer of tantalum (Ta), a second seed layer of one or both titanium (Ti) and Ti-oxide on and in contact with the Ta layer, and a third seed layer of tungsten (W) on and in contact with the second seed layer.
摘要翻译：电流垂直于平面（CPP）磁阻（MR）传感器具有用于铁磁硬（高矫顽力）偏置层的改进的种子层结构，其用于纵向偏置传感器的自由铁磁层。种子层结构是由钽（Ta）的第一种子层，与Ta层接触并与Ta层接触的钛（Ti）和Ti氧化物中的一种或两种的第二晶种层组成的三层，以及第三种子层钨（W）与第二种子层接触并接触。

79. 发明授权

US08320078B1 Perpendicular magnetic recording write head with antiparallel-coupled laminated main pole having a tapered trailing edge 有权
标题翻译：具有反并联耦合层叠主极的垂直磁记录头具有锥形后缘
公开(公告)号：US08320078B1
公开(公告)日：2012-11-27
申请号：US13408213
申请日：2012-02-29
申请人： Alexander M. Zeltser , Stefan Maat , Wen-Chien David Hsiao
发明人： Alexander M. Zeltser , Stefan Maat , Wen-Chien David Hsiao
IPC分类号： G11B5/31
CPC分类号： G11B5/1278 , G11B5/147 , G11B5/3116 , G11B5/3146
摘要： A perpendicular magnetic recording write head has an improved antiparallel-coupled laminated main pole (MP) with a tapered trailing edge. The laminated MP has three ferromagnetic layers and two non-magnetic antiparallel-coupling (APC) layers. A first ferromagnetic layer (FM1) has a thickness T1 and a planar end face at the air-bearing surface (ABS). A second ferromagnetic layer (FM2) has a total thickness T2 and includes a first portion with a thickness T4 that has an end face coplanar with the end face of FM1 and a second portion with a tapered end face. A first APC layer separates FM1 and FM2. A third ferromagnetic layer (FM3) has a thickness T3 and a tapered end face that is coplanar with the tapered end face of FM2. A second APC layer separates FM2 and FM3. The net flux is minimized at both the ABS and at MP cross-sections recessed from the ABS.
摘要翻译：垂直磁记录写头具有改进的具有锥形后缘的反并联耦合层叠主极（MP）。层压MP具有三个铁磁层和两个非磁性反平行耦合（APC）层。第一铁磁层（FM1）具有厚度T1和空气轴承表面（ABS）处的平坦端面。第二铁磁层（FM2）具有总厚度T2，并且包括具有与FM1的端面共面的端面的厚度T4的第一部分和具有锥形端面的第二部分。第一APC层分离FM1和FM2。第三铁磁层（FM3）具有与FM2的锥形端面共面的厚度T3和锥形端面。第二个APC层分离FM2和FM3。在ABS和从ABS嵌入的MP截面处，净通量都被最小化。

80. 发明授权

US08218270B1 Current-perpendicular-to-the-plane (CPP) magnetoresistive (MR) sensor with improved hard magnet biasing structure 有权
标题翻译：具有改进的硬磁体偏置结构的电流垂直平面（CPP）磁阻（MR）传感器
公开(公告)号：US08218270B1
公开(公告)日：2012-07-10
申请号：US13077815
申请日：2011-03-31
申请人： Alexander M. Zeltser , Stefan Maat
发明人： Alexander M. Zeltser , Stefan Maat
IPC分类号： G11B5/39
CPC分类号： G11B5/3932 , G01R33/098 , H01L43/08 , H01L43/10
摘要： A hard magnet biasing structure for a CPP-GMR or CPP-TMR read head for a magnetic recording disk drive is located between the two sensor shields and abutting the side edges of the sensor free layer. An insulating layer is located between the biasing structure and the lower shield and the side edges of the free layer. The biasing structure includes a seed layer of either Ir or Ru, a layer of ferromagnetic chemically-ordered FePt alloy hard bias layer on the seed layer, and a Ru or Ru/Ir capping layer on the FePt alloy hard bias layer. The FePt alloy has a face-centered-tetragonal structure with its c-axis generally in the plane of the layer. The relatively thin seed layer and capping layer allow the biasing structure to be made very thin while still permitting the FePt alloy hard bias layer to have high coercivity (Hc), a high remanent magnetization-thickness product (Mrt) and a high squareness (S=Mrt/Ms).
摘要翻译：用于磁记录盘驱动器的CPP-GMR或CPP-TMR读取头的硬磁体偏置结构位于两个传感器屏蔽之间并邻接传感器自由层的侧边缘。绝缘层位于偏置结构和下屏蔽之间以及自由层的侧边缘之间。偏置结构包括Ir或Ru的种子层，种子层上的铁磁化学有序FePt合金硬偏置层的层，以及FePt合金硬偏压层上的Ru或Ru / Ir覆盖层。 FePt合金具有面向中心的四边形结构，其c轴通常在层的平面中。相对薄的种子层和覆盖层允许偏置结构非常薄，同时仍允许FePt合金硬偏置层具有高矫顽力（Hc），高剩余磁化厚度乘积（Mrt）和高矩形度（S = Mrt / Ms）。

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