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1. 发明专利

AU5795373A SIGNAL ROUTING DEVICE 未知
公开(公告)号：AU5795373A
公开(公告)日：1975-01-16
申请号：AU5795373
申请日：1973-07-10
申请人： PIERRE CHARRANSOL , JACQUES HAURI , SERGE ROBERT FONTANA
发明人： CHARRANSOL PIERRE , HAURI JACQUES , FONTANA SERGE ROBERT
IPC分类号： H04Q11/04 , H04M3/12
摘要： In a PCM switching network, a signal routing device is disclosed for diverting signals from a faulty section of the network to an emergency section. All the transmission paths included between the emergency section and the faulty section are shifted by one step towards the emergency section. At the outputs the reverse shift is performed.

2. 发明申请

US20080020240A1 Method to reduce corner shunting during fabrication of CPP read heads 有权
标题翻译：在CPP读取头制造过程中减少拐角分流的方法
公开(公告)号：US20080020240A1
公开(公告)日：2008-01-24
申请号：US11890868
申请日：2007-08-07
申请人： Robert Fontana , Ying Hong , Wipul Jayasekara , Howard Zolla
发明人： Robert Fontana , Ying Hong , Wipul Jayasekara , Howard Zolla
IPC分类号： G11B5/33 , B05D5/12 , C23F1/04
CPC分类号： B82Y10/00 , B82Y25/00 , G11B5/3163 , G11B5/3932 , G11B2005/3996 , Y10T428/1171
摘要： A method is presented for fabricating a CPP read head having a CPP read head sensor and a hard bias layer which includes forming a strip of sensor material in a sensor material region, and depositing strips of fast-milling dielectric material in first and second fast-milling dielectric material regions adjacent to the sensor material region. A protective layer and a layer of masking material are deposited on the strip of sensor material and the strips of fast-milling dielectric material to provide masked areas and exposed areas. A shaping source, such as an ion milling source, is provided which shapes the exposed areas. Hard bias material is then deposited on the regions of sensor material and fast-milling dielectric material to form caps on each of these regions. The caps of hard bias material and the masking material are then removed from each of these regions.
摘要翻译：提出了一种用于制造具有CPP读取头传感器和硬偏置层的CPP读取头的方法，该CPP读取头包括在传感器材料区域中形成传感器材料条，以及将快速研磨电介质材料的条带放置在第一和第二快速接头中，研磨与传感器材料区域相邻的介电材料区域。保护层和掩蔽材料层沉积在传感器材料条和快速研磨电介质材料条上，以提供掩蔽区域和暴露区域。提供成形源，例如离子铣削源，其形成暴露的区域。然后将硬偏置材料沉积在传感器材料和快速研磨电介质材料的区域上，以在这些区域中的每一个上形成盖。然后从这些区域中的每一个去除硬偏置材料的盖子和掩模材料。

3. 发明申请

US20070171581A1 System, method, and apparatus for magnetic sensor formed by multiple depositions and sensor layers of varying geometry 有权
标题翻译：由多个沉积物和不同几何形状的传感器层形成的磁传感器的系统，方法和装置
公开(公告)号：US20070171581A1
公开(公告)日：2007-07-26
申请号：US11337020
申请日：2006-01-20
申请人： Jeffrey Childress , Robert Fontana , Jeffrey Lille
发明人： Jeffrey Childress , Robert Fontana , Jeffrey Lille
IPC分类号： G11B5/127 , G11B5/33
CPC分类号： G11B5/398 , B82Y25/00 , G01R33/093 , G11B5/3932 , H01L43/08 , H01L43/12 , Y10T29/49041 , Y10T29/49044 , Y10T29/49048
摘要： Formation of the magnetic sensor layers of a magnetic sensor are separated into at least two depositions to reduce the dimension of the sensor. The free layer portion of the sensor is deposited at a different process step than the pinned layer portion. The top of the free layer stack can be a tunnel barrier, the free layer, or part of the free layer. The free layer stack also may contain an in-stack bias layer. The longitudinal bias layer may be patterned in a separate processing step, which allows the stack containing the free layer to be effectively thinner and allow smaller track width dimensions.
摘要翻译：将磁传感器的磁传感器层的形成分成至少两个沉积物以减小传感器的尺寸。传感器的自由层部分以与被钉扎层部分不同的工艺步骤沉积。自由层堆叠的顶部可以是隧道势垒，自由层或自由层的一部分。自由层堆叠还可以包含堆叠内偏压层。纵向偏置层可以在单独的处理步骤中进行图案化，其允许包含自由层的堆叠被有效地更薄并且允许更小的轨道宽度尺寸。

4. 发明申请

US20060022672A1 Planar extraordinary magnetoresistance sensor 有权
标题翻译：平面非凡磁阻传感器
公开(公告)号：US20060022672A1
公开(公告)日：2006-02-02
申请号：US10909122
申请日：2004-07-30
申请人： Amitava Chattopadhyay , Robert Fontana , Bruce Gurney , Stefan Maat , Ernesto Marinero
发明人： Amitava Chattopadhyay , Robert Fontana , Bruce Gurney , Stefan Maat , Ernesto Marinero
IPC分类号： G01R33/02
CPC分类号： B82Y25/00 , G01R33/093 , G01R33/095
摘要： An extraordinary magnetoresistance (EMR) sensor has a planar shunt and planar leads formed on top of the sensor and extending downward into the semiconductor active region, resulting. Electrically conductive material, such as Au or AuGe, is first deposited into lithographically defined windows on top of the sensor. After liftoff of the photoresist a rapid thermal annealing process causes the conductive material to diffuse downward into the semiconductor material and make electrical contact with the active region. The outline of the sensor is defined by reactive etching or other suitable etching techniques. Insulating backfilling material such as Al-oxide is deposited to protect the EMR sensor and the edges of the active region. Chemical mechanical polishing of the structure results in a planar sensor that does not have exposed active region edges.
摘要翻译：非常大的磁阻（EMR）传感器具有平面分流和平面引线，形成在传感器的顶部并向下延伸到半导体有源区域中。诸如Au或AuGe的导电材料首先沉积在传感器顶部的光刻定义的窗口中。在光致抗蚀剂剥离之后，快速热退火工艺使得导电材料向下扩散到半导体材料中并与活性区电接触。传感器的轮廓由反应性蚀刻或其他合适的蚀刻技术限定。沉积诸如Al氧化物的回填材料的绝缘以保护EMR传感器和有源区域的边缘。结构的化学机械抛光导致没有暴露的有源区边缘的平面传感器。

5. 发明申请

US20050180061A1 Self-pinned read sensor design with enhanced lead stabilizing mechanism 失效
标题翻译：自固定读取传感器设计，具有增强的引线稳定机制
公开(公告)号：US20050180061A1
公开(公告)日：2005-08-18
申请号：US10781548
申请日：2004-02-18
申请人： Meng Ding , Robert Fontana , Kuok Ho , Neil Robertson , Ching Tsang
发明人： Meng Ding , Robert Fontana , Kuok Ho , Neil Robertson , Ching Tsang
IPC分类号： G01R33/09 , G11B5/39 , H01L43/08 , G11B5/33 , G11B5/127
CPC分类号： B82Y25/00 , G01R33/093 , G11B5/3912
摘要： A self pinned magnetoresistive sensor that has a relatively thick compressive material at either side to assist with self pinning. A shield having recessed portions at either side of the sensor area allows room for a thicker compressive layer than would otherwise be possible.
摘要翻译：自固定磁阻传感器，在任一侧具有相对较厚的压缩材料以辅助自锁。在传感器区域的任一侧具有凹入部分的屏蔽件允许比否则可能的空间更厚的压缩层。

6. 发明申请

US20050122634A1 Semiconductor slider with an integral spin valve transistor structure and method for making same without a bonding step 有权
标题翻译：具有整体自旋阀晶体管结构的半导体滑块及其制造方法，而无需结合步骤
公开(公告)号：US20050122634A1
公开(公告)日：2005-06-09
申请号：US11036238
申请日：2005-01-13
申请人： Jeffrey Childress , Robert Fontana , Jeffrey Lille
发明人： Jeffrey Childress , Robert Fontana , Jeffrey Lille
IPC分类号： G11B5/10 , G11B5/31 , G11B5/33 , G11B5/39 , G11B5/127 , H01L29/82 , H01L43/00
CPC分类号： B82Y10/00 , G11B5/102 , G11B5/3103 , G11B5/3163 , G11B5/332 , G11B5/3903 , G11B5/3967
摘要： A semiconductor slider including an integral spin valve transistor (SVT) having a read width of 250 nm or less disposed on a monolithic semiconductor. substrate, useful in magnetic data storage applications. The monolithic slider may also include other magnetic and semiconductor transistor structures and is fabricated in a single process using standard thin-film processing steps. The SVT includes a sensor stack having a top surface and including a first ferromagnetic (FM) layer in contact with and forming a Schottky barrier at the monolithic semiconductor substrate, a FM shield layer disposed over the sensor stack and in electrical contact with the top surface thereof, a SVT emitter terminal coupled to the FM shield, a SVT collector terminal coupled to the substrate and a SVT base terminal coupled to the first FM layer. The sensor stack may include a spin valve (SV) stack or a tunnel valve (TV) stack, for example.
摘要翻译：一种半导体滑块，其包括设置在单片半导体上的读宽度为250nm或更小的整体自旋阀晶体管（SVT）。基板，可用于磁数据存储应用。单片滑块还可以包括其它磁性和半导体晶体管结构，并且使用标准薄膜处理步骤在单个工艺中制造。 SVT包括具有顶表面并且包括在单片半导体衬底处接触并形成肖特基势垒的第一铁磁（FM）层的传感器堆叠，设置在传感器堆叠上方并与顶表面电接触的FM屏蔽层耦合到FM屏蔽的SVT发射极端子，耦合到衬底的SVT集电极端子和耦合到第一FM层的SVT基极端子。传感器堆叠可以包括例如自旋阀（SV）堆叠或隧道阀（TV）堆叠。

7. 发明申请

US20080030359A1 METHOD FOR ACCOUNTING FOR PEOPLE IN EMERGENCIES IN INDUSTRIAL SETTINGS 有权
标题翻译：会计处理工业场所紧急情况的方法
公开(公告)号：US20080030359A1
公开(公告)日：2008-02-07
申请号：US11757757
申请日：2007-06-04
申请人： Curt Smith , Steve Poirot , Robert Fontana
发明人： Curt Smith , Steve Poirot , Robert Fontana
IPC分类号： G08B21/00
CPC分类号： G07C9/00111 , G01S5/14 , G01S13/767 , G07C9/00 , G08B13/2462 , G08B21/22
摘要： A method for accounting for individuals in an emergency at industrial facilities utilizing Ultra-Wideband (UWB) transmitters associated with individuals or objects and UWB monitoring stations. Identification information received from the UWB transmitters by UWB monitoring stations are communicated along with time of arrival information to a computer which calculates the location of the UWB transmitter. The system can be used despite severe multi-path effects and can provide location information in 3 dimensions. The system can optionally include proximity-based RF equipment for access control or otherwise for identification in specific locations. Information from the proximity-based RF equipment is also sent to the computer which also receives information from the UWB monitoring stations.
摘要翻译：在利用与个人或物体相关联的超宽带（UWB）发射机和UWB监测站的工业设施的紧急情况下对个人进行会计的方法。由UWB监控站从UWB发射机接收的识别信息与到达时间信息一起传送到计算UWB发射机位置的计算机。尽管严重的多路径效应，系统也可以使用，并且可以在三维空间中提供位置信息。该系统可以可选地包括用于访问控制的基于邻近的RF设备或用于在特定位置识别的基于RF的RF设备。来自接近性RF设备的信息也被发送到也从UWB监控站接收信息的计算机。

8. 发明申请

US20060152859A1 Three terminal magnetic sensor having an in-stack longitudinal biasing layer structure 失效
标题翻译：具有叠层纵向偏置层结构的三端磁传感器
公开(公告)号：US20060152859A1
公开(公告)日：2006-07-13
申请号：US11032598
申请日：2005-01-10
申请人： Jeffrey Childress , Robert Fontana , Jeffrey Lille
发明人： Jeffrey Childress , Robert Fontana , Jeffrey Lille
IPC分类号： G11B5/33 , G11B5/127 , G11B5/147 , H01L29/82 , H01L43/00
CPC分类号： B82Y25/00 , G01R33/093 , G11B5/3903 , G11B5/3932 , H01L29/66984 , H01L43/08
摘要： A three terminal magnetic sensor (TTM) suitable for use in a magnetic head has a base region, a collector region, and an emitter region. A first barrier layer is located between the emitter region and the base region, and a second barrier layer is located between the collector region and the base region. An air bearing surface (ABS) sensing plane of the TTM is defined along sides of the base region, the collector region, and the emitter region. The base region includes a free layer structure, a pinned layer structure, a first non-magnetic spacer layer formed between the free layer structure and the pinned layer structure, an in-stack longitudinal biasing layer (LBL) structure which magnetically biases the free layer structure, and a second non-magnetic spacer layer formed between the free layer structure and the in-stack longitudinal biasing layer structure. In one variation, the layers in the base region are inverted. The TTM may comprise a spin valve transistor (SVT), a magnetic tunnel transistor (MTT), or a double junction structure.
摘要翻译：适用于磁头的三端磁传感器（TTM）具有基极区域，集电极区域和发射极区域。第一阻挡层位于发射极区域和基极区域之间，第二阻挡层位于集电极区域和基极区域之间。 TTM的空气轴承表面（ABS）感测平面沿着基极区域，集电极区域和发射极区域的侧面被限定。基极区域包括自由层结构，钉扎层结构，形成在自由层结构和被钉扎层结构之间的第一非磁性间隔层，叠层纵向偏置层（LBL）结构，其磁性地偏置自由层结构，以及形成在自由层结构和叠层间纵向偏置层结构之间的第二非磁性间隔层。在一个变型中，基区中的层被倒置。 TTM可以包括自旋阀晶体管（SVT），磁隧道晶体管（MTT）或双结结构。

9. 发明申请

US20060124978A1 Spin valve transistor with stabilization and method for producing the same 失效
公开(公告)号：US20060124978A1
公开(公告)日：2006-06-15
申请号：US11340263
申请日：2006-01-25
申请人： Robert Fontana , Jaffrey Lille
发明人： Robert Fontana , Jaffrey Lille
IPC分类号： G11B5/33 , H01L29/94 , H01L43/00 , H01L29/76 , G11B5/127 , H01L29/82 , H01L31/062 , H01L31/113 , H01L31/119
CPC分类号： H01F10/3268 , B82Y10/00 , B82Y25/00 , B82Y40/00 , G11B5/3906 , G11B5/3932 , G11B2005/0008 , G11B2005/3996 , H01F41/302 , H01F41/325 , H01L29/66984 , Y10T29/49039 , Y10T29/49043 , Y10T29/49044
摘要： A method and structure for a spin valve transistor (SVT) comprises a magnetic field sensor, an insulating layer adjacent the magnetic field sensor, a bias layer adjacent the insulating layer, a non-magnetic layer adjacent the bias layer, and a ferromagnetic layer over the non-magnetic layer, wherein the insulating layer and the non-magnetic layer comprise antiferromagnetic materials. The magnetic field sensor comprises a base region, a collector region adjacent the base region, an emitter region adjacent the base region, and a barrier region located between the base region and the emitter region. The bias layer is between the insulating layer and the non-magnetic layer. The bias layer is magnetic and is at least three times the thickness of the magnetic materials in the base region.

10. 发明申请

US20050024774A1 Magnetic head having thermally assisted write head with encapsulated heater element, and method of fabrication thereof 失效
标题翻译：具有具有封装加热元件的热辅助写头的磁头及其制造方法
公开(公告)号：US20050024774A1
公开(公告)日：2005-02-03
申请号：US10631885
申请日：2003-07-30
申请人： Robert Fontana , Jeffrey Lille
发明人： Robert Fontana , Jeffrey Lille
IPC分类号： G11B5/127
CPC分类号： G11B5/127 , Y10T29/49032 , Y10T29/49082 , Y10T29/49083
摘要： A magnetic head including a media heating device. Following the fabrication of the heating device, a sacrificial layer of material is deposited to protect the heating device during subsequent process steps. Thereafter, write head components, such as write head induction coils and/or a P1 pole pedestal are fabricated above the heating device, and the sacrificial layer is substantially consumed in protecting the heating device during the aggressive etching and milling steps used to create those components. Further components, including a second magnetic pole are thereafter fabricated to complete the fabrication of the write head portion of the magnetic head. The sacrificial layer may be comprised of alumina, or a material such as NiFe that can act as a seed layer for a subsequent head components such as the P1 pole pedestal.
摘要翻译：一种包括介质加热装置的磁头。在加热装置的制造之后，沉积牺牲层材料以在随后的工艺步骤中保护加热装置。此后，在加热装置之上制造诸如写头感应线圈和/或P1极基座的写头部件，并且在用于产生这些部件的腐蚀性蚀刻和铣削步骤期间，牺牲层基本上被消耗以保护加热装置。此后，制造包括第二磁极的其它部件以完成磁头的写入头部的制造。牺牲层可以由氧化铝或诸如NiFe的材料组成，其可以用作后续头部部件如P1极基座的种子层。

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