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1. 发明申请

US20110249365A1 PERPENDICULAR MAGNETIC RECORDING WRITE HEAD WITH IMPROVED LAMINATED MAIN POLE 有权
标题翻译：具有改进层压主要特点的磁记录磁头
公开(公告)号：US20110249365A1
公开(公告)日：2011-10-13
申请号：US12759508
申请日：2010-04-13
申请人： Alexander M. Zeltser , Stefan Maat
发明人： Alexander M. Zeltser , Stefan Maat
IPC分类号： G11B5/187 , G11B21/16
CPC分类号： G11B5/147 , G11B5/3116 , G11B5/3146 , G11B5/315
摘要： A perpendicular magnetic recording write head has an improved antiferromagnetically-coupled laminated main pole (MP) formed on a substrate. The MP has two ferromagnetic multilayers, each comprising at least one FeCo/NiFe/FeCo ferromagnetic trilayer, antiferromagnetically coupled across an antiferromagnetically coupling (AFC) film consisting essentially of ruthenium (Ru). The MP has a NiFe layer directly above the AFC film, on the side of the AFC film opposite the side facing the substrate, and in contact with the Ru AFC film and the lower FeCo layer of the upper multilayer. There is no NiFe layer directly below the Ru AFC film so the side of the AFC film facing the substrate is in direct contact with the upper FeCo layer of the lower multilayer.
摘要翻译：垂直磁记录写头具有形成在基板上的改进的反铁磁耦合叠层主极（MP）。 MP具有两个铁磁多层，每层包含至少一个FeCo / NiFe / FeCo铁磁性三层膜，反向铁磁耦合在基本上由钌（Ru）组成的反铁磁耦合（AFC）膜上。 MP具有在AFC膜正上方的NiFe层，在与基板相对的一侧的AFC膜侧，与Ru AFC膜和上部多层的下部FeCo层接触。在Ru AFC膜的正下方没有NiFe层，因此面向衬底的AFC膜的侧面与下部多层的上部FeCo层直接接触。

2. 发明申请

US20120156522A1 CURRENT-PERPENDICULAR-TO-THE-PLANE (CPP) MAGNETORESISTIVE (MR) SENSOR WITH IMPROVED SEED LAYER STRUCTURE FOR HARD BIAS LAYER 有权
标题翻译：具有改进的用于硬偏层的种子层结构的电流 - 平面（CPP）磁传感器（MR）传感器
公开(公告)号：US20120156522A1
公开(公告)日：2012-06-21
申请号：US12969466
申请日：2010-12-15
申请人： Stefan Maat , Alexander M. Zeltser
发明人： Stefan Maat , Alexander M. Zeltser
IPC分类号： G11B5/39
CPC分类号： G11B5/3909 , B82Y10/00 , B82Y25/00 , G11B2005/3996 , Y10T428/1121
摘要： A current-perpendicular-to-the-plane (CPP) magnetoresistive (MR) sensor has an improved seed layer structure for the ferromagnetic hard (high coercivity) bias layer that is used to longitudinally bias the sensor's free ferromagnetic layer. The seed layer structure is a trilayer consisting of a first seed layer of tantalum (Ta), a second seed layer of one or both titanium (Ti) and Ti-oxide on and in contact with the Ta layer, and a third seed layer of tungsten (W) on and in contact with the second seed layer.
摘要翻译：电流垂直于平面（CPP）磁阻（MR）传感器具有用于铁磁硬（高矫顽力）偏置层的改进的种子层结构，其用于纵向偏置传感器的自由铁磁层。种子层结构是由钽（Ta）的第一种子层，与Ta层接触并与Ta层接触的钛（Ti）和Ti氧化物中的一种或两种的第二晶种层组成的三层，以及第三种子层钨（W）与第二种子层接触并接触。

3. 发明授权

US08385025B2 Current-perpendicular-to-the-plane (CPP) magnetoresistive (MR) sensor with improved seed layer structure for hard bias layer 有权
标题翻译：电流垂直于平面（CPP）磁阻（MR）传感器，具有改进的用于硬偏置层的种子层结构
公开(公告)号：US08385025B2
公开(公告)日：2013-02-26
申请号：US12969466
申请日：2010-12-15
申请人： Stefan Maat , Alexander M. Zeltser
发明人： Stefan Maat , Alexander M. Zeltser
IPC分类号： G11B5/39
CPC分类号： G11B5/3909 , B82Y10/00 , B82Y25/00 , G11B2005/3996 , Y10T428/1121
摘要： A current-perpendicular-to-the-plane (CPP) magnetoresistive (MR) sensor has an improved seed layer structure for the ferromagnetic hard (high coercivity) bias layer that is used to longitudinally bias the sensor's free ferromagnetic layer. The seed layer structure is a trilayer consisting of a first seed layer of tantalum (Ta), a second seed layer of one or both titanium (Ti) and Ti-oxide on and in contact with the Ta layer, and a third seed layer of tungsten (W) on and in contact with the second seed layer.
摘要翻译：电流垂直于平面（CPP）磁阻（MR）传感器具有用于铁磁硬（高矫顽力）偏置层的改进的种子层结构，其用于纵向偏置传感器的自由铁磁层。种子层结构是由钽（Ta）的第一种子层，与Ta层接触并与Ta层接触的钛（Ti）和Ti氧化物中的一种或两种的第二晶种层组成的三层，以及第三种子层钨（W）与第二种子层接触并接触。

4. 发明授权

US08320078B1 Perpendicular magnetic recording write head with antiparallel-coupled laminated main pole having a tapered trailing edge 有权
标题翻译：具有反并联耦合层叠主极的垂直磁记录头具有锥形后缘
公开(公告)号：US08320078B1
公开(公告)日：2012-11-27
申请号：US13408213
申请日：2012-02-29
申请人： Alexander M. Zeltser , Stefan Maat , Wen-Chien David Hsiao
发明人： Alexander M. Zeltser , Stefan Maat , Wen-Chien David Hsiao
IPC分类号： G11B5/31
CPC分类号： G11B5/1278 , G11B5/147 , G11B5/3116 , G11B5/3146
摘要： A perpendicular magnetic recording write head has an improved antiparallel-coupled laminated main pole (MP) with a tapered trailing edge. The laminated MP has three ferromagnetic layers and two non-magnetic antiparallel-coupling (APC) layers. A first ferromagnetic layer (FM1) has a thickness T1 and a planar end face at the air-bearing surface (ABS). A second ferromagnetic layer (FM2) has a total thickness T2 and includes a first portion with a thickness T4 that has an end face coplanar with the end face of FM1 and a second portion with a tapered end face. A first APC layer separates FM1 and FM2. A third ferromagnetic layer (FM3) has a thickness T3 and a tapered end face that is coplanar with the tapered end face of FM2. A second APC layer separates FM2 and FM3. The net flux is minimized at both the ABS and at MP cross-sections recessed from the ABS.
摘要翻译：垂直磁记录写头具有改进的具有锥形后缘的反并联耦合层叠主极（MP）。层压MP具有三个铁磁层和两个非磁性反平行耦合（APC）层。第一铁磁层（FM1）具有厚度T1和空气轴承表面（ABS）处的平坦端面。第二铁磁层（FM2）具有总厚度T2，并且包括具有与FM1的端面共面的端面的厚度T4的第一部分和具有锥形端面的第二部分。第一APC层分离FM1和FM2。第三铁磁层（FM3）具有与FM2的锥形端面共面的厚度T3和锥形端面。第二个APC层分离FM2和FM3。在ABS和从ABS嵌入的MP截面处，净通量都被最小化。

5. 发明授权

US08218270B1 Current-perpendicular-to-the-plane (CPP) magnetoresistive (MR) sensor with improved hard magnet biasing structure 有权
标题翻译：具有改进的硬磁体偏置结构的电流垂直平面（CPP）磁阻（MR）传感器
公开(公告)号：US08218270B1
公开(公告)日：2012-07-10
申请号：US13077815
申请日：2011-03-31
申请人： Alexander M. Zeltser , Stefan Maat
发明人： Alexander M. Zeltser , Stefan Maat
IPC分类号： G11B5/39
CPC分类号： G11B5/3932 , G01R33/098 , H01L43/08 , H01L43/10
摘要： A hard magnet biasing structure for a CPP-GMR or CPP-TMR read head for a magnetic recording disk drive is located between the two sensor shields and abutting the side edges of the sensor free layer. An insulating layer is located between the biasing structure and the lower shield and the side edges of the free layer. The biasing structure includes a seed layer of either Ir or Ru, a layer of ferromagnetic chemically-ordered FePt alloy hard bias layer on the seed layer, and a Ru or Ru/Ir capping layer on the FePt alloy hard bias layer. The FePt alloy has a face-centered-tetragonal structure with its c-axis generally in the plane of the layer. The relatively thin seed layer and capping layer allow the biasing structure to be made very thin while still permitting the FePt alloy hard bias layer to have high coercivity (Hc), a high remanent magnetization-thickness product (Mrt) and a high squareness (S=Mrt/Ms).
摘要翻译：用于磁记录盘驱动器的CPP-GMR或CPP-TMR读取头的硬磁体偏置结构位于两个传感器屏蔽之间并邻接传感器自由层的侧边缘。绝缘层位于偏置结构和下屏蔽之间以及自由层的侧边缘之间。偏置结构包括Ir或Ru的种子层，种子层上的铁磁化学有序FePt合金硬偏置层的层，以及FePt合金硬偏压层上的Ru或Ru / Ir覆盖层。 FePt合金具有面向中心的四边形结构，其c轴通常在层的平面中。相对薄的种子层和覆盖层允许偏置结构非常薄，同时仍允许FePt合金硬偏置层具有高矫顽力（Hc），高剩余磁化厚度乘积（Mrt）和高矩形度（S = Mrt / Ms）。

6. 发明授权

US08139321B2 Perpendicular magnetic recording write head with improved laminated main pole 有权
标题翻译：垂直磁记录头与改进的层叠主极
公开(公告)号：US08139321B2
公开(公告)日：2012-03-20
申请号：US12759508
申请日：2010-04-13
申请人： Alexander M. Zeltser , Stefan Maat
发明人： Alexander M. Zeltser , Stefan Maat
IPC分类号： G11B5/31
CPC分类号： G11B5/147 , G11B5/3116 , G11B5/3146 , G11B5/315
摘要： A perpendicular magnetic recording write head has an improved antiferromagnetically-coupled laminated main pole (MP) formed on a substrate. The MP has two ferromagnetic multilayers, each comprising at least one FeCo/NiFe/FeCo ferromagnetic trilayer, antiferromagnetically coupled across an antiferromagnetically coupling (AFC) film consisting essentially of ruthenium (Ru). The MP has a NiFe layer directly above the AFC film, on the side of the AFC film opposite the side facing the substrate, and in contact with the Ru AFC film and the lower FeCo layer of the upper multilayer. There is no NiFe layer directly below the Ru AFC film so the side of the AFC film facing the substrate is in direct contact with the upper FeCo layer of the lower multilayer.
摘要翻译：垂直磁记录写头具有形成在基板上的改进的反铁磁耦合叠层主极（MP）。 MP具有两个铁磁多层，每层包含至少一个FeCo / NiFe / FeCo铁磁性三层膜，反向铁磁耦合在基本上由钌（Ru）组成的反铁磁耦合（AFC）膜上。 MP具有在AFC膜正上方的NiFe层，在与基板相对的一侧的AFC膜侧，与Ru AFC膜和上部多层的下部FeCo层接触。在Ru AFC膜的正下方没有NiFe层，因此面向衬底的AFC膜的侧面与下部多层的上部FeCo层直接接触。

7. 发明申请

US20120161263A1 Current perpendicular to plane (CPP) magnetoresistive sensor having dual composition hard bias layer 审中-公开
标题翻译：电流垂直于具有双组分硬偏置层的平面（CPP）磁阻传感器
公开(公告)号：US20120161263A1
公开(公告)日：2012-06-28
申请号：US12930131
申请日：2010-12-28
申请人： Stefan Maat , Alexander M. Zeltser
发明人： Stefan Maat , Alexander M. Zeltser
IPC分类号： H01L43/10
CPC分类号： H01L43/08 , B82Y25/00 , G01R33/093 , G11B5/3932 , H01F10/123 , H01F10/325 , H01F10/3254 , H01L43/10
摘要： A current-perpendicular-to-the-plane (CPP) magnetoresistive (MR) sensor has a dual composition hard bias layer structure that is used to longitudinally bias the sensor's free ferromagnetic layer. The dual composition hard bias layer structure is composed of first layer of CoPt, having high anisotropy compared to the second layer. The second layer, composed of CoFe, has a higher magnetization compared to the first layer. The resulting dual hard bias layer structure exhibits high values of coercivity and squareness while maintaining a reduced sensor thickness compared to sensors of the prior art.
摘要翻译：电流垂直平面（CPP）磁阻（MR）传感器具有双组分硬偏置层结构，用于纵向偏置传感器的自由铁磁层。双组分硬偏压层结构由第一层CoPt组成，与第二层相比具有高各向异性。由CoFe组成的第二层与第一层相比具有较高的磁化强度。与现有技术的传感器相比，所得到的双重硬偏置层结构显示出高的矫顽力和矩形度值，同时保持了传感器厚度的降低。

8. 发明授权

US08178158B2 Method for making a current-perpendicular-to-the-plane giant magnetoresistance (CPP-GMR) sensor with a confined-current-path (CCP) 有权
标题翻译：制造具有限流电路（CCP）的电流垂直于平面的巨磁阻（CPP-GMR）传感器的方法
公开(公告)号：US08178158B2
公开(公告)日：2012-05-15
申请号：US12131863
申请日：2008-06-02
申请人： Thomas R. Berthold , Matthew J. Carey , Jeffrey R. Childress , Jordan Asher Katine , Stefan Maat
发明人： Thomas R. Berthold , Matthew J. Carey , Jeffrey R. Childress , Jordan Asher Katine , Stefan Maat
IPC分类号： G11B5/00 , G11B5/127 , G11B5/133
CPC分类号： H01F41/307 , B82Y10/00 , B82Y25/00 , B82Y30/00 , B82Y40/00 , G01R33/093 , G11B5/3906 , G11B2005/3996 , H01F10/005 , H01F10/3259 , H01F10/3272
摘要： A method of making a current-perpendicular-to-the-plane giant magnetoresistive (CPP-GMR) sensor with a confined-current-path (CCP) layer uses an array of self-assembled ferritin protein molecules with inorganic cores to make the CCP layer in the sensor stack. In one embodiment, the ferritin molecules with cores of insulating oxide particles are deposited on an electrically conductive support layer and the ferritin molecules are dissolved, leaving an array of insulating oxide particles. An electrically conducting layer is deposited over the oxide particles and into the regions between the oxide particles to form the CCP layer. In another embodiment, the ferritin molecules with inorganic particles in their cores are deposited on an electrically insulating support layer and the ferritin molecules are dissolved, leaving an array of inorganic particles that function as an etch mask. The insulating support layer is then etched through the mask to form vias down to the underlying layer on which the support layer is formed. An electrically conducting layer is then deposited to form the CCP layer.
摘要翻译：使用限制电流路径（CCP）层制造电流垂直于平面的巨磁阻（CPP-GMR）传感器的方法使用具有无机芯的自组装铁蛋白分子阵列来制备CCP 传感器堆叠中的层。在一个实施方案中，具有绝缘氧化物颗粒核心的铁蛋白分子沉积在导电支撑层上，铁蛋白分子溶解，留下绝缘氧化物颗粒阵列。将导电层沉积在氧化物颗粒上并进入氧化物颗粒之间的区域中以形成CCP层。在另一个实施方案中，其核心中具有无机颗粒的铁蛋白分子沉积在电绝缘支撑层上，并且铁蛋白分子被溶解，留下用作蚀刻掩模的无机颗粒阵列。然后通过掩模蚀刻绝缘支撑层，以形成通向下面到其上形成有支撑层的下层的通孔。然后沉积导电层以形成CCP层。

9. 发明授权

US08154829B2 Tunneling magnetoresistive (TMR) device with improved ferromagnetic underlayer for MgO tunneling barrier layer 有权
标题翻译：隧道磁阻（TMR）器件具有用于MgO隧道势垒层的改进的铁磁底层
公开(公告)号：US08154829B2
公开(公告)日：2012-04-10
申请号：US12553864
申请日：2009-09-03
申请人： Matthew J. Carey , Jeffrey R. Childress , Stefan Maat
发明人： Matthew J. Carey , Jeffrey R. Childress , Stefan Maat
IPC分类号： G11B5/127
CPC分类号： H01L43/10 , B82Y10/00 , B82Y25/00 , G01R33/098 , G11B5/3906 , G11B5/3909
摘要： A tunneling magnetoresistance (TMR) device, like a TMR read head for a magnetic recording hard disk drive, has a magnesium oxide (MgO) tunneling barrier layer and a ferromagnetic underlayer beneath and in direct contact with the MgO tunneling barrier layer. The ferromagnetic underlayer comprises a crystalline material according to the formula (CoxFe(100-x))(100-y)Gey, where the subscripts represent atomic percent, x is between about 45 and 55, and y is between about 26 and 37. The ferromagnetic underlayer may be the CoxFe(100-x))(100-y)Gey portion of a bilayer of two ferromagnetic layers, for example a CoFe/(CoxFe(100-x))(100-y)Gey bilayer. The specific composition of the ferromagnetic underlayer improves the crystallinity of the MgO tunneling barrier after annealing and improves the tunneling magnetoresistance of the TMR device.
摘要翻译：隧道磁阻（TMR）器件，如磁记录硬盘驱动器的TMR读头，具有氧化镁（MgO）隧道势垒层和在MgO隧道势垒层下面直接接触的铁磁性底层。铁磁底层包含根据式（CoxFe（100-x））（100-y）Gey的结晶材料，其中下标表示原子百分比，x在约45和55之间，y在约26和37之间。铁磁性底层可以是两个铁磁层的双层的CoxFe（100-x））（100-y）Gey部分，例如CoFe /（CoxFe（100-x））（100-y）Gey双层。铁磁性底层的具体组成提高了退火后MgO隧道势垒的结晶度，提高了TMR器件的隧穿磁阻。

10. 发明申请

US20120063034A1 CURRENT-PERPENDICULAR-TO-THE-PLANE (CPP) MAGNETORESISTIVE (MR) SENSOR WITH IMPROVED INSULATING STRUCTURE 审中-公开
标题翻译：具有改进的绝缘结构的电流 - 平面（CPP）磁传感器（MR）传感器
公开(公告)号：US20120063034A1
公开(公告)日：2012-03-15
申请号：US12880953
申请日：2010-09-13
申请人： Yimin Hsu , Cherngye Hwang , Simon Huangchung Liao , Stefan Maat
发明人： Yimin Hsu , Cherngye Hwang , Simon Huangchung Liao , Stefan Maat
IPC分类号： G11B5/127
CPC分类号： G11B5/3909 , B82Y10/00 , B82Y25/00 , G01R33/098 , G11B5/3932 , G11B2005/3996
摘要： A current-perpendicular-to-the-plane (CPP) magnetoresistive (MR) sensor, like a CPP MR disk drive read head, has an improved insulating structure surrounding the stack of layers making up the sensor. The sensor has a first silicon nitride layer with a thickness between about 1 and 5 nm on the side edges of the sensor and on regions of the bottom shield layer adjacent the sensor below the sensor's ferromagnetic biasing layer. The sensor has a second silicon nitride layer with a thickness between about 2 and 5 nm on the back edge of the sensor and on the region of the bottom shield layer adjacent the sensor back edge, and a substantially thicker metal oxide layer on the second silicon nitride layer. The insulating structure prevents edge damage at the perimeter of the sensor and thus allows for the fabrication of CPP MR read heads with substantially smaller dimensions.
摘要翻译：电流垂直平面（CPP）磁阻（MR）传感器，如CPP MR磁盘驱动器读头，具有围绕构成传感器的层叠层的改进的绝缘结构。传感器具有在传感器的侧边缘上的厚度在约1和5nm之间的第一氮化硅层以及与传感器的铁磁偏置层下方的传感器相邻的底部屏蔽层的区域。传感器具有在传感器的后边缘上和厚度在约2和5nm之间的第二氮化硅层，并且在与底部屏蔽层相邻的传感器后边缘的区域上，以及在第二硅上的基本上较厚的金属氧化物层氮化物层。绝缘结构防止传感器周边的边缘损坏，从而允许制造具有基本较小尺寸的CPP MR读取头。

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