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    • 71. 发明专利
    • Radiation source, lithography apparatus, and device manufacturing method
    • 辐射源,光刻设备和器件制造方法
    • JP2010153857A
    • 2010-07-08
    • JP2009281085
    • 2009-12-11
    • Asml Netherlands Bvエーエスエムエル ネザーランズ ビー.ブイ.
    • SCHIMMEL HENDRIKUS GIJSBERTUSBANINE VADIM YEVGENYEVICHLOOPSTRA ERIK ROELOF
    • H01L21/027G03F7/20
    • G03F7/70916G03F7/70033G03F7/70175H05G2/003
    • PROBLEM TO BE SOLVED: To provide an EUV (extreme ultraviolet) radiation source which has a contamination barrier to reduce a deposition rate of such as ion, atom, molecule or particle debris on a light collecting mirror and to minimize an amount of EUV radiation to be absorbed, scattered, or deflected. SOLUTION: The radiation source for producing EUV or lithography of high resolution includes a plasma forming portion on which a fuel contacts with a radiation beam to produce the EUV radiation. A collector with a mirror collects the EUV radiation produced at a first focus to reflect it toward a second focus. The contamination barrier is positioned so that its surrounding portion does not close more than 50% of a solid angle specified by the mirror at the second focus, thereby, the EUV radiation is not excessively attenuated. The contamination barrier traps a fuel material such as ion from plasma, atom, molecule, or nano-small drops to prevent the deposit on the collecting mirror. A gas extraction port may be located near a plasma forming portion to control the fuel debris toward the collecting mirror and diffusion of contamination. COPYRIGHT: (C)2010,JPO&INPIT
    • 要解决的问题:提供具有污染屏障的EUV(极紫外)辐射源,以减少聚光镜上的离子,原子,分子或颗粒碎屑的沉积速率,并使得 EUV辐射被吸收,分散或偏转。 解决方案:用于生产高分辨率的EUV或光刻的辐射源包括等离子体形成部分,燃料在其上与辐射束接触以产生EUV辐射。 具有镜子的收集器收集在第一焦点产生的EUV辐射,以反映第二焦点。 污染屏障定位成使得其周围部分不会闭合在第二焦点处由反射镜规定的立体角的50%以上,从而EUV辐射不会被过度衰减。 污染屏障捕获诸如等离子体,原子,分子或纳米小滴的离子的燃料,以防止沉积在聚光镜上。 气体提取口可以位于等离子体形成部分附近,以控制朝向收集反射镜的燃料碎屑和污染的扩散。 版权所有(C)2010,JPO&INPIT
    • 80. 发明专利
    • Dual stage lithographic device and method of manufacturing the device
    • 双级光刻设备及其制造方法
    • JP2006332656A
    • 2006-12-07
    • JP2006139902
    • 2006-05-19
    • Asml Netherlands Bvエーエスエムエル ネザーランズ ビー.ブイ.
    • BRINK MARINUS AART VAN DENBENSCHOP JOZEF PETRUS HENRICUSLOOPSTRA ERIK ROELOF
    • H01L21/027
    • PROBLEM TO BE SOLVED: To provide a lithographic device having a high throughput and that can transfer patterns with relatively small structures on substrates.
      SOLUTION: The invention relates to a dual stage lithographic device, in which two substrate stages are constructed to cooperate with each other to perform a joint sweep movement for guiding the lithographic device from a first condition, a condition in which an immersion liquid is confined between a first substrate carried by a first stage of the stages and a final element of the projection system in the device, to a second condition, a condition in which the liquid is confined between a second substrate carried by a second stage of the two stages and the final element, such that during the joint sweep movement, the liquid is confined to be substantially within the described space with respect to the final element.
      COPYRIGHT: (C)2007,JPO&INPIT
    • 要解决的问题:提供具有高通量并可以在基板上以相对小的结构转移图案的光刻设备。 解决方案:本发明涉及一种双级光刻设备,其中两个基板台被构造成彼此配合以执行用于从第一状态引导光刻设备的关节扫掠运动,其中浸没液体 被限制在由第一级承载的第一衬底和装置中的投影系统的最终元件之间,第二条件是将液体限制在由第二级承载的第二衬底 两级和最终元件,使得在联合扫掠运动期间,液体被限制在相对于最终元件基本上在所描述的空间内。 版权所有(C)2007,JPO&INPIT