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71. 发明申请

US20090057707A1 SEMICONDUCTOR LIGHT EMITTING DEVICE AND METHOD FOR MANUFACTURING SAME 有权
标题翻译：半导体发光器件及其制造方法
公开(公告)号：US20090057707A1
公开(公告)日：2009-03-05
申请号：US12195580
申请日：2008-08-21
申请人： Hiroshi Katsuno , Yasuo Ohba , Kei Kaneko
发明人： Hiroshi Katsuno , Yasuo Ohba , Kei Kaneko
IPC分类号： H01L33/00
CPC分类号： H01L33/405 , H01L33/32 , H01L33/38 , H01L2224/05001 , H01L2224/05023 , H01L2224/0508 , H01L2224/05124 , H01L2224/05139 , H01L2224/05166 , H01L2224/05169 , H01L2224/05568 , H01L2224/05644 , H01L2224/13 , H01L2224/48091 , H01L2224/73265 , H01L2924/00014
摘要： A semiconductor light emitting device includes: a laminated body including a first semiconductor layer, a second semiconductor layer, and a light emitting layer provided between the first semiconductor layer and the second semiconductor layer; a first electrode provided on a first major surface of the laminated body and connected to the first semiconductor layer; and a second electrode provided on the first major surface of the laminated body and connected to the second semiconductor layer. The first electrode includes: a first region provided on the first semiconductor layer and including a first metal film; and a second region provided on the first semiconductor layer and including a second metal film, the second metal film having a higher reflectivity for light emitted from the light emitting layer than the first metal film and having a higher contact resistance with respect to the first semiconductor layer than the first metal film.
摘要翻译：半导体发光器件包括：层叠体，包括第一半导体层，第二半导体层和设置在第一半导体层和第二半导体层之间的发光层; 第一电极，设置在所述层叠体的第一主表面上并与所述第一半导体层连接; 以及设置在所述层叠体的所述第一主表面上并与所述第二半导体层连接的第二电极。第一电极包括：设置在第一半导体层上并包括第一金属膜的第一区域; 以及第二区域，设置在所述第一半导体层上并且包括第二金属膜，所述第二金属膜对于从所述发光层发射的光比所述第一金属膜具有更高的反射率，并且相对于所述第一半导体具有较高的接触电阻层比第一金属膜。

72. 发明授权

US07295699B2 Image processing system, program, information storage medium, and image processing method 有权
标题翻译：图像处理系统，程序，信息存储介质和图像处理方法
公开(公告)号：US07295699B2
公开(公告)日：2007-11-13
申请号：US10847447
申请日：2004-05-18
申请人： Yasuo Ohba , Kentaro Yamaguchi
发明人： Yasuo Ohba , Kentaro Yamaguchi
IPC分类号： G06K9/00 , G06K9/36
CPC分类号： G01C11/06 , H04N13/122 , H04N13/334
摘要： An original image area IMR is divided into divided image areas DR1 to DR4, texture coordinates specified by division point coordinates are obtained, and images of the divided image areas DR1 to DR4 are mapped onto polygons PL1 to PL4, based on the obtained texture coordinates. The original image area IMR is divided in such a manner that division spacing in a direction DIR1 towards a vanishing point VP1 from the original image becomes narrower as the divided image areas are closer to the vanishing point VP1 and texture coordinates are obtained, to implement correction processing for removing perspective of the original image. Correction processing is performed to remove perspective of images at a base surface of images IL1 and IR1 for the left eye and the right eye, the images IL2 and IR2 for the left eye and the right eye are generated, and a stereoscopic image is generated by synthesizing (by anaglyph processing) IL2 and IR2.
摘要翻译：原始图像区域IMR被划分为分割图像区域DR 1至DR 4，获得由分割点坐标指定的纹理坐标，并且基于分割图像区域DR 1至DR 4的图像被映射到多边形PL 1至PL 4上对获得的纹理坐标。原始图像区域IMR以这样的方式被分割，使得从原始图像朝向消失点VP 1的方向DIR 1上的分割间隔随着分割图像区域更靠近消失点VP 1而变窄，并获得纹理坐标，以实现用于去除原始图像的透视的校正处理。执行校正处理以去除左眼和右眼的图像IL1和IR1的基面处的图像的透视图，生成用于左眼和右眼的图像IL 2和IR 2，以及立体视觉通过合成（通过浮雕处理）IL 2和IR 2产生图像。

73. 发明授权

US06768137B2 Laminated semiconductor substrate and optical semiconductor element 有权
公开(公告)号：US06768137B2
公开(公告)日：2004-07-27
申请号：US10400633
申请日：2003-03-28
申请人： Mitsuhiro Kushibe , Yasuo Ohba , Rei Hashimoto , Keiji Takaoka
发明人： Mitsuhiro Kushibe , Yasuo Ohba , Rei Hashimoto , Keiji Takaoka
IPC分类号： H01L3300
CPC分类号： H01L33/32 , H01L33/06
摘要： A low-cost high-property optical semiconductor element for a long wavelength is provided, using a GaAs substrate. The optical semiconductor element comprises a substrate of GaAs having a first surface and a second surface opposite to each other, a buffer layer of InjGa1-jAs1-kNk (0≦j≦1, 0.002≦k≦0.05) formed on the first surface of the substrate, a first conductive type clad layer formed on the buffer layer, an active layer formed on the first conductive type clad layer and comprising a well layer of InzGa1-zAs (0≦z≦1), the well layer having a smaller bandgap than the first conductive type clad layer, the active layer having a thickness of more than its critical thickness for the substrate based upon equilibrium theories, and a second conductive type clad layer formed on the active layer and having a larger bandgap than the well layer.

74. 发明授权

US5617438A Semiconductor laser and method for manufacturing the same 失效
标题翻译：半导体激光器及其制造方法
公开(公告)号：US5617438A
公开(公告)日：1997-04-01
申请号：US567982
申请日：1995-12-11
申请人： Ako Hatano , Yasuo Ohba
发明人： Ako Hatano , Yasuo Ohba
IPC分类号： H01S5/323 , H01S5/327 , H01S3/19
CPC分类号： H01S5/32341 , H01S5/327 , H01S2302/00
摘要： A semiconductor laser having an oscillation wavelength of not more than 450 nm comprises a substrate, a lower cladding layer containing a III-V Group compound semiconductor as a main component formed on the substrate, an active layer containing the III-V Group compound semiconductor as a main component formed on the lower cladding layer and an upper p-type cladding layer containing III-V Group compound semiconductor as a main component. Mg and Si are contained in the upper p-type cladding layer. A GaN series compound semiconductor is preferably used as the III-V Group compound semiconductor and the upper cladding layer contains preferably not less than 5.times.10.sup.18 /cm.sup.3 of Si.
摘要翻译：振荡波长在450nm以下的半导体激光器包括基板，在基板上形成有III-V族化合物半导体作为主要成分的下包层，含有III-V族化合物半导体的活性层为形成在下包层上的主要成分和含有III-V族化合物半导体作为主要成分的上部p型包覆层。 Mg和Si包含在上p型包覆层中。优选使用GaN系化合物半导体作为III-V族化合物半导体，上部包层优选含有5×10 18 / cm 3以上的Si。

75. 发明授权

US5432808A Compound semicondutor light-emitting device 失效
标题翻译：复合半导体发光装置
公开(公告)号：US5432808A
公开(公告)日：1995-07-11
申请号：US212787
申请日：1994-03-15
申请人： Ako Hatano , Yasuo Ohba
发明人： Ako Hatano , Yasuo Ohba
IPC分类号： H01L33/00 , H01L33/32 , H01S5/02 , H01S5/323 , H01S3/19
CPC分类号： H01L33/32 , H01L33/007 , H01S5/32341 , H01S2304/04 , H01S5/021
摘要： A compound semiconductor light-emitting device includes a cubic SiC substrate, and an Ga.sub.x Al.sub.y In.sub.1-x-y N (0.ltoreq.x.ltoreq.1, 0.ltoreq.y.ltoreq.1) layer formed on the (111) surface of the cubic-crystal SiC substrate. The surface of the Ga.sub.x Al.sub.y In.sub.1-x-y N layer, which opposes the substrate, is an N surface, and the light-emitting device has a pn junction.
摘要翻译：化合物半导体发光器件包括立方体SiC衬底和形成在（111）表面上的GaxAlyIn1-x-yN（0≤x≤1,0≤y≤1）层立方晶SiC衬底。与衬底相对的GaxAlyIn1-x-yN层的表面是N表面，并且发光器件具有pn结。

76. 发明授权

US5273933A Vapor phase growth method of forming film in process of manufacturing semiconductor device 失效
标题翻译：在制造半导体器件的过程中形成薄膜的气相生长方法
公开(公告)号：US5273933A
公开(公告)日：1993-12-28
申请号：US917321
申请日：1992-07-23
申请人： Ako Hatano , Toshihide Izumiya , Yasuo Ohba
发明人： Ako Hatano , Toshihide Izumiya , Yasuo Ohba
IPC分类号： H01L21/205 , H01L33/00 , H01L33/34 , H01L21/20
CPC分类号： H01L33/34 , H01L21/0237 , H01L21/02378 , H01L21/02392 , H01L21/02395 , H01L21/0242 , H01L21/02458 , H01L21/02461 , H01L21/02477 , H01L21/02529 , H01L21/0254 , H01L21/02543 , H01L21/0256 , H01L21/02576 , H01L21/02579 , H01L21/0262 , H01L33/0037 , H01L33/0062 , H01L33/007 , H01L33/0087 , Y10S438/925
摘要： In a process of manufacturing a short-wavelength-light emitting element, n- and p-type GaInAlN films are formed on a substrate made of SiC, using an MOCVD method. (CH.sub.3).sub.3 SiN.sub.3 is used as raw material for nitrogen. The films are grown at a relatively low temperature and the amount of nitrogen doped in the films is increased.
摘要翻译：在制造短波长发光元件的过程中，使用MOCVD法在由SiC制成的衬底上形成n型和p型GaInAlN膜。（CH3）3SiN3用作氮原料。膜在相对低的温度下生长，并且膜中掺杂的氮的量增加。

77. 发明授权

US5235194A Semiconductor light-emitting device with InGaAlP 失效
标题翻译：具有InGaAlP的半导体发光器件
公开(公告)号：US5235194A
公开(公告)日：1993-08-10
申请号：US819976
申请日：1992-01-13
申请人： Toshihide Izumiya , Yasuo Ohba , Ako Hatano
发明人： Toshihide Izumiya , Yasuo Ohba , Ako Hatano
IPC分类号： H01L33/00 , H01L33/30
CPC分类号： H01L33/30 , H01L33/0062 , H01L2224/48463 , H01L2224/4918 , H01L2224/73265
摘要： A semiconductor light-emitting device comprises a light-emitting layer including a pn junction formed by a plurality of In.sub.x Ga.sub.y Al.sub.1-x-y P (0.ltoreq.x, y.ltoreq.1) layers, and a light-emitting-layer holding layer consisting of an indirect transition type Ga.sub.l-w Al.sub.w As (0.ltoreq.w.ltoreq.1) provided on an opposite side to a light-outputting side. The holding layer has a sufficiently small light absorption coefficient for the light from the light-emitting layer although its band gap is small and improves the light emission efficiency of the semiconductor light-emitting device.
摘要翻译：半导体发光器件包括由多个In x Ga y Al 1-x-y P（0

78. 发明授权

US5103271A Semiconductor light emitting device and method of fabricating the same 失效
标题翻译：半导体发光装置及其制造方法
公开(公告)号：US5103271A
公开(公告)日：1992-04-07
申请号：US588858
申请日：1990-09-27
申请人： Toshihide Izumiya , Yasuo Ohba , Ako Hatano
发明人： Toshihide Izumiya , Yasuo Ohba , Ako Hatano
IPC分类号： H01L33/00 , H01L33/30
CPC分类号： H01L33/30 , H01L33/0062
摘要： A semiconductor light-emitting device comprises a light-emitting layer including a pn junction formed by a plurality of In.sub.x Ga.sub.y Al.sub.l-x-y P (0.ltoreq.x, y.ltoreq.l) layers, and a light-emitting-layer holding layer consisting of an indirect transition type Ga.sub.l-w Al.sub.w As (0.ltoreq.w.ltoreq.l) provided on an opposite side to a light-outputting side. The holding layer has a sufficiently small light absorption coefficient for the light from the light-emitting layer even though its band gap is small and improves the light emission efficiency of the semiconductor light-emitting device.

79. 发明授权

US5005057A Semiconductor light-emitting diode and method of manufacturing the same 失效
标题翻译：半导体发光二极管及其制造方法
公开(公告)号：US5005057A
公开(公告)日：1991-04-02
申请号：US508685
申请日：1990-04-13
申请人： Toshihide Izumiya , Yasuo Ohba , Ako Hatano
发明人： Toshihide Izumiya , Yasuo Ohba , Ako Hatano
IPC分类号： H01L21/205 , H01L33/06 , H01L33/10 , H01L33/12 , H01L33/20 , H01L33/32 , H01L33/34 , H01L33/54 , H01L33/56
CPC分类号： H01L33/32 , B82Y20/00 , H01L33/0062 , H01L33/007 , H01L33/04 , H01L33/06 , H01L33/10 , H01L2224/48091 , H01L2224/48247 , H01L2224/48463 , H01L2924/181
摘要： A blue LED which includes a light-emitting layer having a p-n junction makes use of the superlattice structure being formed of a plurality of BP layers and Ga.sub.x Al.sub.1-x N (0.ltoreq.x.ltoreq.1) layers which are alternately stacked, with the Ga.sub.x Al.sub.1-x N (0.ltoreq.x.ltoreq.1) layers having a zinc blende type structure, or else makes use of a Ga.sub.x Al.sub.y B.sub.1-x-y N.sub.z P.sub.1-z (0.ltoreq.x, y, z.ltoreq.1 and x+y.ltoreq.1) mixed crystal layer having a zinc blende type crystal structure.
摘要翻译：包括具有pn结的发光层的蓝色LED利用由交替层叠的多个BP层和GaxAl1-xN（0

80. 发明授权

US4928285A Impurity-doped semiconductor laser device for single wavelength oscillation 失效
标题翻译：用于单波长振荡的杂质掺杂半导体激光器件
公开(公告)号：US4928285A
公开(公告)日：1990-05-22
申请号：US314176
申请日：1989-02-23
申请人： Mitsuhiro Kushibe , Kazuhiro Eguchi , Masahisa Funamizu , Yasuo Ohba
发明人： Mitsuhiro Kushibe , Kazuhiro Eguchi , Masahisa Funamizu , Yasuo Ohba
IPC分类号： H01S5/16 , H01S5/227 , H01S5/30 , H01S5/323
CPC分类号： H01S5/16 , H01S5/227 , H01S5/305 , H01S5/164 , H01S5/2275 , H01S5/3068 , H01S5/32391
摘要： An impurity-doped double-heterostructure semiconductor laser adapted for single-longitudinal-mode operation is disclosed which includes a semiconductive substrate and a mesa of double-heterostructure formed over the substrate. The mesa comprises an active layer serving as a light-emitting layer, a waveguiding layer adjacent to the active layer and clad layers interposing the active layer and the waveguiding layer therebetween. A high-resistively layer is formed to bury the lateral surfaces of the mesa. The active layer contains impurities of a rare earth element with a previously selected concentration. The limited concentration of impurities is high enough to confine only light components falling within a specific range of wavelength, of all the light components produced in the active layer when the laser device is operative, within the active layer so as to provide single wavelength laser oscillation and low enough to inhibit the initiation of spontaneous emission of the rare earth element within the active layer. For example, the concentration may be set to 1.times.10.sup.18 cm.sup.-3 or below.
摘要翻译：公开了一种适用于单纵模操作的杂质掺杂双异质结构半导体激光器，其包括半导体基片和形成在基片上的双异质结构的台面。台面包括用作发光层的有源层，与有源层相邻的波导层和在其间插入有源层和波导层的包层。形成高电阻层以埋设台面的侧表面。活性层含有预先选定浓度的稀土元素的杂质。有限的杂质浓度足够高，仅限于在有源层内仅在有源层内限制落在特定波长范围内的所有在活性层中产生的光分量的光成分，以提供单波长激光振荡并且足够低以抑制活性层内稀土元素的自发发射。例如，浓度可以设定为1×10 18 cm -3以下。

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