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61. 发明授权

US09705284B1 VCSEL with at least one through substrate via 有权
公开(公告)号：US09705284B1
公开(公告)日：2017-07-11
申请号：US14957940
申请日：2015-12-03
申请人： II-VI OptoElectronic Devices, Inc.
发明人： David Cheskis
IPC分类号： H01S5/183 , H01S5/187 , H01S5/323
CPC分类号： H01S5/187 , H01S5/0207 , H01S5/02276 , H01S5/0425 , H01S5/183 , H01S5/18308 , H01S5/18311 , H01S5/32316 , H01S2301/176
摘要： In an illustrative embodiment, a VCSEL comprises a substrate, a first DBR on a first major surface of the substrate, an active region on the first DBR, a second DBR on the active region, and electrically conductive vias that pass through the substrate and provide ohmic contact with the DBRs so that electrical connections to both DBRs are available on the substrate side of the VCSEL. The VCSEL is formed by forming a first DBR on a first major surface of a substrate, forming an active region on the first DBR, forming a second DBR on the active region, thinning the substrate, making a first via hole through the substrate to the first DBR, making a second via hole through the substrate and the first DBR, filling the first via hole with an electrically conducting material to contact the first DBR, filling the second via hole with an electrically conducting material, and coupling the second via hole to the second DBR.

62. 发明授权

US09704622B2 Laser-controlled optical transconductance varistor system 有权
公开(公告)号：US09704622B2
公开(公告)日：2017-07-11
申请号：US14642692
申请日：2015-03-09
申请人： Hoang T. Nguyen , Brent C. Stuart
发明人： Hoang T. Nguyen , Brent C. Stuart
IPC分类号： H01L31/08 , H01C7/00 , H01S5/42 , H01S5/323 , H01S5/00 , F21V8/00 , H01S5/06 , H01L31/09 , H01L31/16
CPC分类号： H01C7/00 , G02B6/0005 , H01L31/09 , H01L31/162 , H01S3/11 , H01S5/0085 , H01S5/0615 , H01S5/06213 , H01S5/32316 , H01S5/4031 , H01S5/423
摘要： An optical transconductance varistor system having a modulated radiation source configured to provide modulated stimulus, a wavelength converter operably connected to the modulated radiation source to produce a modulated stimulus having a predetermined wavelength, and a wide bandgap semiconductor photoconductive material in contact between two electrodes. The photoconductive material is operably coupled, such as by a beam transport module, to receive the modulated stimulus having the predetermined wavelength to control a current flowing through the photoconductive material when a voltage potential is present across the electrodes.

63. 发明申请

US20170141142A1 OPTOELECTRONICS AND CMOS INTEGRATION ON GOI SUBSTRATE 审中-公开
公开(公告)号：US20170141142A1
公开(公告)日：2017-05-18
申请号：US15420115
申请日：2017-01-31
申请人： International Business Machines Corporation
发明人： Effendi Leobandung , Ning Li , Devendra K. Sadana
IPC分类号： H01L27/144 , H01S5/323 , H01L27/092 , H01S5/32 , H01L31/0304 , H01L31/18
CPC分类号： H01L27/144 , G02B6/00 , G02B6/12004 , G02B2006/12078 , G02B2006/12121 , G02B2006/12123 , H01L21/84 , H01L25/167 , H01L25/50 , H01L27/092 , H01L31/0304 , H01L31/184 , H01L31/1852 , H01S5/021 , H01S5/0261 , H01S5/3211 , H01S5/32316
摘要： A single chip including an optoelectronic device on the semiconductor layer in a first region, the optoelectronic device comprises a bottom cladding layer, an active region, and a top cladding layer, wherein the bottom cladding layer is above and in direct contact with the semiconductor layer, the active region is above and in direct contact with the bottom cladding layer, and the top cladding layer is above and in direct contact with the active region, a silicon device on the substrate extension layer in a second region, a device insulator layer substantially covering both the optoelectronic device in the first region and the silicon device in the second region, and a waveguide embedded within the device insulator layer in direct contact with a sidewall of the active region of the optoelectronic device.

64. 发明申请

US20160369965A1 LIGHT EMITTING MODULE 审中-公开
标题翻译：发光模块
公开(公告)号：US20160369965A1
公开(公告)日：2016-12-22
申请号：US15136106
申请日：2016-04-22
申请人： LG ELECTRONICS INC.
发明人： Jun PARK , Byungwoo JEOUNG , Sangok YEO
IPC分类号： F21S8/10 , H01S5/323 , F21V9/16
CPC分类号： F21S41/14 , F21S41/135 , F21S41/143 , F21S41/16 , F21S41/17 , F21S41/19 , F21S41/255 , F21S41/285 , F21S41/295 , F21S41/321 , F21S41/36 , F21S41/365 , F21S41/395 , F21S45/47 , F21V5/04 , F21V7/0033 , F21V7/0041 , F21V9/30 , F21V13/04 , F21V13/12 , F21V14/04 , F21V29/51 , F21V29/70 , F21V29/713 , F21V29/76 , F21Y2115/10 , F21Y2115/30 , H01S5/32316
摘要： A light emitting module is disclosed. The light emitting module includes a condensing lens for condensing incident light into a space, a light source for providing first light to pass through the condensing lens, a first optical path conversion member for reflecting the first light to provide first reflected light to pass through the condensing lens and a second optical path conversion member for providing the first reflected light as second reflected light to pass through the condensing lens.
摘要翻译：公开了一种发光模块。发光模块包括用于将入射光聚光到空间的聚光透镜，用于提供第一光以通过聚光透镜的光源，用于反射第一光以提供第一反射光以通过第一光的第一光路转换构件聚光透镜和第二光路转换构件，用于提供第一反射光作为第二反射光以通过聚光透镜。

65. 发明申请

US20100020836A1 USE OF CURRENT CHANNELING IN MULTIPLE NODE LASER SYSTEMS AND METHODS THEREOF 有权
标题翻译：多通道激光系统中的电流通道的使用及其方法
公开(公告)号：US20100020836A1
公开(公告)日：2010-01-28
申请号：US12178028
申请日：2008-07-23
申请人： Robert C. Hoffman
发明人： Robert C. Hoffman
IPC分类号： H01S5/10
CPC分类号： H01S5/1228 , H01S5/0654 , H01S5/1234 , H01S5/168 , H01S5/32316 , H01S2301/173
摘要： Current channels, blocking areas, or strips in a semiconductor laser are used to channel injected current into the antinodal region of the optical standing wave present in the optical cavity, while restricting the current flow to the nodal regions. Previous devices injected current into both the nodal and antinodal regions of the wave, which is fed by the population inversion created in the active region by the injected electrons and holes, but inversion created in the nodal regions is lost to fluorescence or supports the creation of undesirable competing longitudinal modes, causing inefficiency. Directing current to the antinodal regions where the electric field is at its maximum causes a selected longitudinal mode to preferentially oscillate regardless of where the longitudinal mode lies with respect to the gain curve. In one embodiment, exacting fabrication of the Fabry-Perot cavity correlates the current channels to antinodal regions, vis-a vis current blocking areas, strips or segmented layers.
摘要翻译：半导体激光器中的电流通道，阻挡区域或条带用于将注入的电流引导到存在于光学腔中的光驻波的抗结块区域，同时限制电流到节点区域。以前的装置将电流注入到波的节点和抗结点区域中，该区域由被注入的电子和空穴在有源区域中产生的群体反转馈送，但是在节点区域中产生的反转会失去荧光或支持产生不良竞争的纵向模式，导致效率低下。将电流引导到电场处于其最大值的抗结区，导致所选择的纵向模式优先振荡，而不管纵向模式相对于增益曲线位于何处。在一个实施例中，法布里 - 珀罗腔的严格制造使得当前通道与抗结块区域相对于电流阻挡区域，条带或分段层相关。

66. 发明申请

US20070177645A1 Semiconductor laser device 审中-公开
标题翻译：半导体激光器件
公开(公告)号：US20070177645A1
公开(公告)日：2007-08-02
申请号：US11698187
申请日：2007-01-26
申请人： Hiroyuki Hosoba
发明人： Hiroyuki Hosoba
IPC分类号： H01S5/00
CPC分类号： H01S5/2231 , H01S5/20 , H01S5/2219 , H01S5/305 , H01S5/32316 , H01S2301/173
摘要： A semiconductor laser device, comprising a buffer layer of a first conductivity type, a clad layer of the first conductivity type, an active layer and a clad layer of a second conductivity type formed on a semiconductor substrate of the first conductivity type, wherein a band gap in the buffer layer of the first conductivity type has a value which is greater than a band gap of the semiconductor substrate and smaller than a band gap of the clad layer of the first conductivity type, and an impurity concentration in the buffer layer of the first conductivity type is higher than an impurity concentration in the clad layer of the first conductivity type.
摘要翻译：一种半导体激光器件，包括形成在第一导电类型的半导体衬底上的第一导电类型的缓冲层，第一导电类型的包覆层，有源层和第二导电类型的覆盖层，其中带第一导电类型的缓冲层中的间隙具有大于半导体衬底的带隙并且小于第一导电类型的包覆层的带隙的值，以及第一导电类型的缓冲层中的杂质浓度第一导电类型高于第一导电类型的包层中的杂质浓度。

67. 发明申请

US20040240504A1 High power semiconductor laser device 失效
标题翻译：大功率半导体激光器件
公开(公告)号：US20040240504A1
公开(公告)日：2004-12-02
申请号：US10617833
申请日：2003-07-14
发明人： Chong Cook Kim , Ki Won Moon
IPC分类号： H01S005/00
CPC分类号： H01S5/2231 , H01S5/2031 , H01S5/3211 , H01S5/3213 , H01S5/32316 , H01S2301/18
摘要： Disclosed is a high power semiconductor laser device having a low far-field vertical angle (FFV) and excellent optical power efficiency. The semiconductor laser device comprises a semiconductor substrate, a lower clad layer formed on the semiconductor substrate, a lower guide layer formed on the lower clad layer, an active layer formed on the lower guide layer, an upper guide layer formed on the active layer, and an upper clad layer formed on the upper guide layer, wherein the lower and upper clad layers have the same refractivity, and the lower clad layer includes a high refractivity layer, spaced from the lower guide layer by a constant distance, with refractivity higher than that of the upper clad layer.
摘要翻译：公开了具有低远场垂直角（FFV）和优异的光功率效率的大功率半导体激光装置。半导体激光器件包括半导体衬底，形成在半导体衬底上的下覆盖层，形成在下覆盖层上的下引导层，形成在下引导层上的有源层，形成在有源层上的上引导层，以及形成在上导向层上的上包层，其中下包层和上包覆层具有相同的折射率，并且下包层具有高折射率层，与下引导层间隔一定距离，折射率高于上包层的。

68. 发明授权

US06782024B2 High power semiconductor laser diode 有权
标题翻译：大功率半导体激光二极管
公开(公告)号：US06782024B2
公开(公告)日：2004-08-24
申请号：US09852994
申请日：2001-05-10
申请人： Berthold Schmidt , Susanne Pawlik , Achim Thies , Christoph Harder
发明人： Berthold Schmidt , Susanne Pawlik , Achim Thies , Christoph Harder
IPC分类号： H01S500
CPC分类号： H01S5/22 , H01S5/0425 , H01S5/168 , H01S5/2216 , H01S5/32316
摘要： Semiconductor laser diodes, particularly high power AlGaAs-based ridge-waveguide laser diodes, are often used in opto-electronics as so-called pump laser diodes for fiber amplifiers in optical communication lines. To provide the desired high power output and stability of such a laser diode and avoid degradation during use, the present invention concerns an improved design of such a device, the improvement in particular significantly minimizing or avoiding (front) end section degradation of such a laser diode and significantly increasing long-term stability compared to prior art designs. This is achieved by establishing one or two “unpumped end sections” of the laser diode. One preferred way of providing such an unpumped end section at one of the laser facets (10, 12) is to insert an isolation layer (11, 13) of predetermined position, size, and shape between the laser diode's semiconductor material and the usually existing metallization (6).
摘要翻译：半导体激光二极管，特别是大功率AlGaAs基脊波导激光二极管，通常用作光电子学中所谓的用于光通信线路中的光纤放大器的泵激光二极管。为了提供这种激光二极管的期望的高功率输出和稳定性并且避免在使用期间的劣化，本发明涉及这种器件的改进的设计，特别地显着地最小化或避免了这种激光（前端）部分退化的改进二极管，并且与现有技术设计相比显着提高了长期稳定性。这是通过建立激光二极管的一个或两个“未使用的端部”来实现的。在激光刻面（10,12）中的一个上提供这种未卷边端部的一种优选方式是将预定位置，尺寸和形状的隔离层（11,13）插入激光二极管的半导体材料和通常存在的金属化（6）。

69. 发明申请

US20030133484A1 Semiconductor laser and method of producing the same 有权
标题翻译：半导体激光器及其制造方法
公开(公告)号：US20030133484A1
公开(公告)日：2003-07-17
申请号：US10315191
申请日：2002-12-10
发明人： Takashi Kimura , Hisayoshi Kitajima
IPC分类号： H01S005/00
CPC分类号： H01S5/16 , H01S5/168 , H01S5/2231 , H01S5/32316
摘要： A semiconductor laser device having a lower cladding layer, an active layer and an upper first cladding layer stacked on a compound semiconductor substrate in this order, a ridge-shaped upper second cladding layer provided on the upper first cladding layer, a current blocking layer provided on both sides of the upper second cladding layer, and a contact layer provided on the upper second cladding layer. A current interrupting layer or layers formed of an insulating material are provided between the upper second cladding layer and the contact layer, in the vicinity of at least one of a laser emission end face and a reflective end face, which are both end faces of the device in the longitudinal direction of the upper second cladding layer.
摘要翻译：具有依次层叠在化合物半导体基板上的下包层，有源层和上第一包层的半导体激光装置，设置在上第一包层上的脊形上第二包覆层，设置有电流阻挡层在上第二包覆层的两侧，以及设置在上第二包覆层上的接触层。在上部第二包层和接触层之间，在激光发射端面和反射端面中的至少一个附近设置由绝缘材料形成的电流中断层或两层的两端面装置在上第二包层的纵向方向上。

70. 发明授权

US06480640B1 Integrated optical circuit device and method for producing the same 有权
标题翻译：集成光电路装置及其制造方法
公开(公告)号：US06480640B1
公开(公告)日：2002-11-12
申请号：US09200645
申请日：1998-11-25
申请人： Atsushi Shimonaka , Hidenori Kawanishi
发明人： Atsushi Shimonaka , Hidenori Kawanishi
IPC分类号： G02B612
CPC分类号： H01S5/026 , G02B6/122 , G02B6/2813 , G02B2006/12078 , G02B2006/12092 , G02B2006/12097 , G02B2006/121 , G02B2006/12178 , H01S5/1032 , H01S5/32316
摘要： An integrated optical circuit device includes: a first optical element section including first and second element regions deposited along a thickness direction; a second optical element section formed away from the first optical element section, and a multimode interference region provided between the first and second optical element sections, the multimode interference region including a buried portion formed along a light propagation direction. The first and second optical element sections are optically coupled to each other via the multimode interference region.
摘要翻译：集成光电路装置包括：第一光学元件部分，包括沿厚度方向沉积的第一和第二元素区域; 形成为远离第一光学元件部分的第二光学元件部分和设置在第一和第二光学元件部分之间的多模干涉区域，所述多模干涉区域包括沿光传播方向形成的掩埋部分。第一和第二光学元件部分经由多模干涉区域彼此光学耦合。

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