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1. 发明授权

US06782024B2 High power semiconductor laser diode 有权
标题翻译：大功率半导体激光二极管
公开(公告)号：US06782024B2
公开(公告)日：2004-08-24
申请号：US09852994
申请日：2001-05-10
申请人： Berthold Schmidt , Susanne Pawlik , Achim Thies , Christoph Harder
发明人： Berthold Schmidt , Susanne Pawlik , Achim Thies , Christoph Harder
IPC分类号： H01S500
CPC分类号： H01S5/22 , H01S5/0425 , H01S5/168 , H01S5/2216 , H01S5/32316
摘要： Semiconductor laser diodes, particularly high power AlGaAs-based ridge-waveguide laser diodes, are often used in opto-electronics as so-called pump laser diodes for fiber amplifiers in optical communication lines. To provide the desired high power output and stability of such a laser diode and avoid degradation during use, the present invention concerns an improved design of such a device, the improvement in particular significantly minimizing or avoiding (front) end section degradation of such a laser diode and significantly increasing long-term stability compared to prior art designs. This is achieved by establishing one or two “unpumped end sections” of the laser diode. One preferred way of providing such an unpumped end section at one of the laser facets (10, 12) is to insert an isolation layer (11, 13) of predetermined position, size, and shape between the laser diode's semiconductor material and the usually existing metallization (6).
摘要翻译：半导体激光二极管，特别是大功率AlGaAs基脊波导激光二极管，通常用作光电子学中所谓的用于光通信线路中的光纤放大器的泵激光二极管。为了提供这种激光二极管的期望的高功率输出和稳定性并且避免在使用期间的劣化，本发明涉及这种器件的改进的设计，特别地显着地最小化或避免了这种激光（前端）部分退化的改进二极管，并且与现有技术设计相比显着提高了长期稳定性。这是通过建立激光二极管的一个或两个“未使用的端部”来实现的。在激光刻面（10,12）中的一个上提供这种未卷边端部的一种优选方式是将预定位置，尺寸和形状的隔离层（11,13）插入激光二极管的半导体材料和通常存在的金属化（6）。

2. 发明授权

US07218659B2 High power semiconductor laser diode 有权
标题翻译：大功率半导体激光二极管
公开(公告)号：US07218659B2
公开(公告)日：2007-05-15
申请号：US10890714
申请日：2004-07-14
申请人： Berthold Schmidt , Susanne Pawlik , Achim Thies , Christoph Harder
发明人： Berthold Schmidt , Susanne Pawlik , Achim Thies , Christoph Harder
IPC分类号： H01S5/00
CPC分类号： H01S5/22 , H01S5/0425 , H01S5/168 , H01S5/2216 , H01S5/32316
摘要： Semiconductor laser diodes, particularly high power AlGaAs-based ridge-waveguide laser diodes, are often used in opto-electronics as so-called pump laser diodes for fiber amplifiers in optical communication lines. To provide the desired high power output and stability of such a laser diode and avoid degradation during use, the present invention concerns an improved design of such a device, the improvement in particular significantly minimizing or avoiding (front) end section degradation of such a laser diode and significantly increasing long-term stability compared to prior art designs. This is achieved by establishing one or two “unpumped end sections” of the laser diode. One preferred way of providing such an unpumped end section at one of the laser facets (10, 12) is to insert an isolation layer (11, 13) of predetermined position, size, and shape between the laser diode's semiconductor material and the usually existing metallization (6). A further embodiment shows separate, further isolation layers (5) extending along the laser diode, potentially abutting the ridge waveguide of the laser.
摘要翻译：半导体激光二极管，特别是大功率AlGaAs基脊波导激光二极管，通常用作光电子学中所谓的用于光通信线路中的光纤放大器的泵激光二极管。为了提供这种激光二极管的期望的高功率输出和稳定性并且避免在使用期间的劣化，本发明涉及这种器件的改进的设计，特别地显着地最小化或避免了这种激光（前端）部分退化的改进二极管，并且与现有技术设计相比显着提高了长期稳定性。这是通过建立激光二极管的一个或两个“未使用的端部”来实现的。在激光刻面（10,12）中的一个上提供这种未卷边端部的一种优选方式是将预定位置，尺寸和形状的隔离层（11,13）插入激光二极管的半导体材料和通常存在的金属化（6）。另一个实施例示出了沿着激光二极管延伸的分离的另外的隔离层（5），潜在地邻接激光器的脊波导。

3. 发明申请

US20050030998A1 High power semiconductor laser diode 有权
标题翻译：大功率半导体激光二极管
公开(公告)号：US20050030998A1
公开(公告)日：2005-02-10
申请号：US10890714
申请日：2004-07-14
申请人： Berthold Schmidt , Susanne Pawlik , Achim Thies , Christoph Harder
发明人： Berthold Schmidt , Susanne Pawlik , Achim Thies , Christoph Harder
IPC分类号： H01S5/16 , H01S5/042 , H01S5/22 , H01S5/323 , H01S5/343 , H01S5/00
CPC分类号： H01S5/22 , H01S5/0425 , H01S5/168 , H01S5/2216 , H01S5/32316
摘要： Semiconductor laser diodes, particularly high power AlGaAs-based ridge-waveguide laser diodes, are often used in opto-electronics as so-called pump laser diodes for fiber amplifiers in optical communication lines. To provide the desired high power output and stability of such a laser diode and avoid degradation during use, the present invention concerns an improved design of such a device, the improvement in particular significantly minimizing or avoiding (front) end section degradation of such a laser diode and significantly increasing long-term stability compared to prior art designs. This is achieved by establishing one or two “unpumped end sections” of the laser diode. One preferred way of providing such an unpumped end section at one of the laser facets (10, 12) is to insert an isolation layer (11, 13) of predetermined position, size, and shape between the laser diode's semiconductor material and the usually existing metallization (6). A further embodiment shows separate, further isolation layers (5) extending along the laser diode, potentially abutting the ridge waveguide of the laser.
摘要翻译：半导体激光二极管，特别是大功率AlGaAs基脊波导激光二极管，通常用作光电子学中所谓的用于光通信线路中的光纤放大器的泵激光二极管。为了提供这种激光二极管的期望的高功率输出和稳定性并且避免在使用期间的劣化，本发明涉及这种器件的改进的设计，特别地显着地最小化或避免了这种激光（前端）部分退化的改进二极管，并且与现有技术设计相比显着提高了长期稳定性。这是通过建立激光二极管的一个或两个“未使用的端部”来实现的。在激光刻面（10,12）中的一个上提供这种未卷边端部的一种优选方式是将预定位置，尺寸和形状的隔离层（11,13）插入激光二极管的半导体材料和通常存在的金属化（6）。另一个实施例示出了沿着激光二极管延伸的分离的另外的隔离层（5），潜在地邻接激光器的脊波导。

4. 发明申请

US20080123697A1 METHOD FOR MAKING A HIGH POWER SEMICONDUCTOR LASER DIODE 有权
标题翻译：制造高功率半导体激光二极管的方法
公开(公告)号：US20080123697A1
公开(公告)日：2008-05-29
申请号：US11972156
申请日：2008-01-10
申请人： Silke TRAUT , Berthold Schmidt , Boris Sverdlov , Achim Thies
发明人： Silke TRAUT , Berthold Schmidt , Boris Sverdlov , Achim Thies
IPC分类号： H01S3/098
CPC分类号： H01S5/22 , H01S5/0425 , H01S5/0655 , H01S5/20 , H01S5/2022 , H01S5/2219
摘要： Semiconductor laser diodes, particularly high power ridge waveguide laser diodes, are often used in opto-electronics as so-called pump laser diodes for fiber amplifiers in optical communication lines. To provide the desired high power output and stability of such a laser diode and avoid degradation during use, the present invention concerns an improved design of such a device, the improvement concerns a method of suppressing the undesired first and higher order modes of the laser which consume energy and do not contribute to the optical output of the laser, thus reducing it's efficiency. This novel effect is provided by a structure comprising CIG—for Complex Index Guiding—elements on top of the laser diode, said CIG being established by fabricating CIG elements consisting of one or a plurality of layers and containing at least one layer which provides the optical absorption of undesired modes of the lasing wavelength. This CIG preferably contains an insulating layer as a first contact layer to the semiconductor. The CIG elements are manufactured by a selected sequence of processing steps, in particular several masking steps, and are specifically shaped, both in thickness and coverage of the laser's semiconductor body, to provide desired suppression characteristics. Further, the CIG elements may be combined with the contact layer usually providing the electrical input power to the laser diode.
摘要翻译：半导体激光二极管，特别是高功率脊波导激光二极管，通常用作光电子学中所谓的用于光通信线路中光纤放大器的泵激光二极管。为了提供这种激光二极管的期望的高功率输出和稳定性并且避免在使用期间的劣化，本发明涉及这种器件的改进设计，改进涉及一种抑制激光器的不期望的第一和更高阶模式的方法，消耗能量，不对激光的光输出有贡献，从而降低了其效率。该新颖效果由在激光二极管顶部包括CIG-复合索引引导元件的结构提供，所述CIG通过制造由一个或多个层组成的CIG元件并且包含至少一层提供光学吸收不期望的激光波长的模式。该CIG优选地包含作为半导体的第一接触层的绝缘层。 CIG元件通过所选择的处理步骤序列，特别是几个掩模步骤制造，并且在激光器半导体主体的厚度和覆盖范围内都被特别地成形，以提供所需的抑制特性。此外，CIG元件可以与通常为激光二极管提供电输入功率的接触层组合。

5. 发明申请

US20050201438A1 Method for making a high power semiconductor laser diode 审中-公开
标题翻译：制造大功率半导体激光二极管的方法
公开(公告)号：US20050201438A1
公开(公告)日：2005-09-15
申请号：US11040246
申请日：2005-01-21
申请人： Silke Traut , Berthold Schmidt , Boris Sverdlov , Achim Thies
发明人： Silke Traut , Berthold Schmidt , Boris Sverdlov , Achim Thies
IPC分类号： H01L21/00 , H01L33/00 , H01S3/098 , H01S3/10 , H01S3/20 , H01S5/00 , H01S5/22
CPC分类号： H01S5/22 , H01S5/0425 , H01S5/0655 , H01S5/20 , H01S5/2022 , H01S5/2219
摘要： Semiconductor laser diodes, particularly high power ridge waveguide laser diodes, are often used in opto-electronics as so-called pump laser diodes for fiber amplifiers in optical communication lines. To provide the desired high power output and stability of such a laser diode and avoid degradation during use, the present invention concerns an improved design of such a device, the improvement concerns a method of suppressing the undesired first and higher order modes of the laser which consume energy and do not contribute to the optical output of the laser, thus reducing it's efficiency. This novel effect is provided by a structure comprising CIG—for Complex Index Guiding—elements on top of the laser diode, said CIG being established by fabricating CIG elements consisting of one or a plurality of layers and containing at least one layer which provides the optical absorption of undesired modes of the lasing wavelength. This CIG preferably contains an insulating layer as a first contact layer to the semiconductor. The CIG elements are manufactured by a selected sequence of processing steps, in particular several masking steps, and are specifically shaped, both in thickness and coverage of the lasers semiconductor body, to provide desired suppression characteristics. Further, the CIG elements may be combined with the contact layer usually providing the electrical input power to the laser diode.
摘要翻译：半导体激光二极管，特别是高功率脊波导激光二极管，通常用作光电子学中所谓的用于光通信线路中光纤放大器的泵激光二极管。为了提供这种激光二极管的期望的高功率输出和稳定性并且避免在使用期间的劣化，本发明涉及这种器件的改进设计，改进涉及一种抑制激光器的不期望的第一和更高阶模式的方法，消耗能量，不对激光的光输出有贡献，从而降低了其效率。该新颖效果由在激光二极管顶部包括CIG-复合索引引导元件的结构提供，所述CIG通过制造由一个或多个层组成的CIG元件并且包含至少一层提供光学吸收不期望的激光波长的模式。该CIG优选地包含作为半导体的第一接触层的绝缘层。 CIG元件通过所选择的处理步骤序列制造，特别是几个掩模步骤，并且在激光器半导体主体的厚度和覆盖范围内都被特别地成形，以提供期望的抑制特性。此外，CIG元件可以与通常为激光二极管提供电输入功率的接触层组合。

6. 发明授权

US07623555B2 High power semiconductor laser diode 有权
标题翻译：大功率半导体激光二极管
公开(公告)号：US07623555B2
公开(公告)日：2009-11-24
申请号：US11972156
申请日：2008-01-10
申请人： Silke Traut , Berthold Schmidt , Boris Sverdlov , Achim Thies
发明人： Silke Traut , Berthold Schmidt , Boris Sverdlov , Achim Thies
IPC分类号： H01S3/098 , H01S3/113 , H01S5/00
CPC分类号： H01S5/22 , H01S5/0425 , H01S5/0655 , H01S5/20 , H01S5/2022 , H01S5/2219
摘要： Semiconductor laser diodes, particularly high power ridge waveguide laser diodes, are often used in opto-electronics as so-called pump laser diodes for fiber amplifiers in optical communication lines. To provide the desired high power output and stability of such a laser diode and avoid degradation during use, the present invention concerns an improved design of such a device, the improvement concerns a method of suppressing the undesired first and higher order modes of the laser which consume energy and do not contribute to the optical output of the laser, thus reducing it's efficiency. This novel effect is provided by a structure comprising CIG—for Complex Index Guiding—elements on top of the laser diode, said CIG being established by fabricating CIG elements consisting of one or a plurality of layers and containing at least one layer which provides the optical absorption of undesired modes of the lasing wavelength. This CIG preferably contains an insulating layer as a first contact layer to the semiconductor. The CIG elements are manufactured by a selected sequence of processing steps, in particular several masking steps, and are specifically shaped, both in thickness and coverage of the laser's semiconductor body, to provide desired suppression characteristics. Further, the CIG elements may be combined with the contact layer usually providing the electrical input power to the laser diode.
摘要翻译：半导体激光二极管，特别是高功率脊波导激光二极管，通常用作光电子学中所谓的用于光通信线路中光纤放大器的泵激光二极管。为了提供这种激光二极管的期望的高功率输出和稳定性并且避免在使用期间的劣化，本发明涉及这种器件的改进设计，改进涉及一种抑制激光器的不期望的第一和更高阶模式的方法，消耗能量，不对激光的光输出有贡献，从而降低了其效率。该新颖效果由在激光二极管顶部包括CIG-复合索引引导元件的结构提供，所述CIG通过制造由一个或多个层组成的CIG元件并且包含至少一层提供光学吸收不期望的激光波长的模式。该CIG优选地包含作为半导体的第一接触层的绝缘层。 CIG元件通过所选择的处理步骤序列，特别是几个掩模步骤制造，并且在激光器半导体主体的厚度和覆盖范围内都被特别地成形，以提供所需的抑制特性。此外，CIG元件可以与通常为激光二极管提供电输入功率的接触层组合。

7. 发明授权

US06862300B1 High power semiconductor laser diode and method for making such a diode 有权
标题翻译：大功率半导体激光二极管及其制造方法
公开(公告)号：US06862300B1
公开(公告)日：2005-03-01
申请号：US10245199
申请日：2002-09-17
申请人： Silke Traut , Berthold Schmidt , Boris Sverdlov , Achim Thies
发明人： Silke Traut , Berthold Schmidt , Boris Sverdlov , Achim Thies
IPC分类号： H01L21/00 , H01L33/00 , H01S3/098 , H01S3/10 , H01S3/20 , H01S5/00 , H01S5/22
CPC分类号： H01S5/22 , H01S5/0425 , H01S5/0655 , H01S5/20 , H01S5/2022 , H01S5/2219
摘要： Semiconductor laser diodes, particularly high power ridge waveguide laser diodes, are often used in opto-electronics as so-called pump laser diodes for fiber amplifiers in optical communication lines. To provide the desired high power output and stability of such a laser diode and avoid degradation during use, the present invention concerns an improved design of such a device, the improvement in particular consisting in a way of suppressing the undesired first and higher order modes of the laser which consume energy and do not contribute to the optical output of the laser, thus reducing it's efficiency. Essentially, the novel effect is provided by a structure comprising CIG—for Complex Index Guiding—elements on top of the laser diode. These CIG elements consist of one or a plurality of layers and must contain at least one layer which provides the optical absorption of undesired modes of the lasing wavelength and preferably contains an insulating layer as a first contact layer to the semiconductor. The CIG elements may be specifically shaped, both in thickness and coverage of the laser's semiconductor body, to provide desired suppression characteristics. Further, the CIG elements may be combined with the contact layer usually providing the electrical input power to the laser diode.
摘要翻译：半导体激光二极管，特别是高功率脊波导激光二极管，通常用作光电子学中所谓的用于光通信线路中光纤放大器的泵激光二极管。为了提供这种激光二极管的期望的高功率输出和稳定性并且避免在使用期间的劣化，本发明涉及这种器件的改进的设计，其改进特别地包括以下方式：抑制不期望的第一和更高阶模式激光器消耗能量并且不会对激光器的光输出有贡献，从而降低了其效率。本质上，新颖的效果由在激光二极管顶部包括CIG-复杂索引引导元件的结构提供。这些CIG元件由一层或多层组成，并且必须包含至少一层，其提供激发波长波长的不期望的模式的光学吸收，并且优选地包含作为半导体的第一接触层的绝缘层。 CIG元件可以在激光器的半导体主体的厚度和覆盖范围内都是特别成形的，以提供所需的抑制特性。此外，CIG元件可以与通常为激光二极管提供电输入功率的接触层组合。

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